JP2016537818A - シリコンゲルマニウムＦｉｎＦＥＴ形成 - Google Patents

シリコンゲルマニウムＦｉｎＦＥＴ形成 Download PDF

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JP2016537818A
JP2016537818A JP2016532536A JP2016532536A JP2016537818A JP 2016537818 A JP2016537818 A JP 2016537818A JP 2016532536 A JP2016532536 A JP 2016532536A JP 2016532536 A JP2016532536 A JP 2016532536A JP 2016537818 A JP2016537818 A JP 2016537818A
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fin structure
finfet
single crystal
sige
fin
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JP2016532536A
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JP2016537818A5 (enExample
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ジェフリー・ジュンハオ・シュ
チョ・フェイ・イェプ
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クアルコム，インコーポレイテッド
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/024—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET]
    • H10D30/0241—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET] doping of vertical sidewalls, e.g. using tilted or multi-angled implants
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26586—Bombardment with radiation with high-energy radiation producing ion implantation characterised by the angle between the ion beam and the crystal planes or the main crystal surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/024—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/62—Fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/751—Insulated-gate field-effect transistors [IGFET] having composition variations in the channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/791—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H10D62/116—Dielectric isolations, e.g. air gaps adjoining the input or output regions of field-effect devices, e.g. adjoining source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2016532536A 2013-11-22 2014-10-17 シリコンゲルマニウムＦｉｎＦＥＴ形成 Pending JP2016537818A (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201361908003P 2013-11-22 2013-11-22
US61/908,003 2013-11-22
US14/269,828 2014-05-05
US14/269,828 US20150145069A1 (en) 2013-11-22 2014-05-05 Silicon germanium finfet formation
PCT/US2014/061226 WO2015076957A1 (en) 2013-11-22 2014-10-17 Silicon germanium finfet formation

Publications (2)

Publication Number Publication Date
JP2016537818A true JP2016537818A (ja) 2016-12-01
JP2016537818A5 JP2016537818A5 (enExample) 2017-11-09

Family

ID=51799344

Family Applications (1)

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JP2016532536A Pending JP2016537818A (ja) 2013-11-22 2014-10-17 シリコンゲルマニウムＦｉｎＦＥＴ形成

Country Status (5)

Country Link
US (2) US20150145069A1 (enExample)
EP (1) EP3072157A1 (enExample)
JP (1) JP2016537818A (enExample)
CN (1) CN105745757A (enExample)
WO (1) WO2015076957A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9679899B2 (en) 2015-08-24 2017-06-13 Stmicroelectronics, Inc. Co-integration of tensile silicon and compressive silicon germanium
US9735155B2 (en) 2015-12-14 2017-08-15 International Business Machines Corporation Bulk silicon germanium FinFET
US9680019B1 (en) * 2016-07-20 2017-06-13 Globalfoundries Inc. Fin-type field-effect transistors with strained channels

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040206951A1 (en) * 2003-04-18 2004-10-21 Mirabedini Mohammad R. Ion implantation in channel region of CMOS device for enhanced carrier mobility
US20060163581A1 (en) * 2005-01-24 2006-07-27 Lsi Logic Corporation Fabrication of strained silicon film via implantation at elevated substrate temperatures
US20070257315A1 (en) * 2006-05-04 2007-11-08 International Business Machines Corporation Ion implantation combined with in situ or ex situ heat treatment for improved field effect transistors
US7629220B2 (en) * 2006-06-30 2009-12-08 Freescale Semiconductor, Inc. Method for forming a semiconductor device and structure thereof
US7767560B2 (en) * 2007-09-29 2010-08-03 Intel Corporation Three dimensional strained quantum wells and three dimensional strained surface channels by Ge confinement method
US8557692B2 (en) * 2010-01-12 2013-10-15 Taiwan Semiconductor Manufacturing Company, Ltd. FinFET LDD and source drain implant technique
US8709928B2 (en) * 2010-01-19 2014-04-29 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor fin device and method for forming the same using high tilt angle implant
US8598025B2 (en) * 2010-11-15 2013-12-03 Varian Semiconductor Equipment Associates, Inc. Doping of planar or three-dimensional structures at elevated temperatures
CN102779753B (zh) * 2011-05-12 2015-05-06 中芯国际集成电路制造(上海)有限公司 半导体器件制造方法
CN103021827B (zh) * 2011-09-27 2015-07-08 中芯国际集成电路制造(上海)有限公司 鳍式场效应管、cmos鳍式场效应管的形成方法
CN103187297B (zh) * 2011-12-31 2016-06-29 中芯国际集成电路制造(上海)有限公司 鳍式场效应晶体管的制作方法
US8722431B2 (en) * 2012-03-22 2014-05-13 Varian Semiconductor Equipment Associates, Inc. FinFET device fabrication using thermal implantation
US8946792B2 (en) * 2012-11-26 2015-02-03 International Business Machines Corporation Dummy fin formation by gas cluster ion beam
US9299564B2 (en) * 2012-12-12 2016-03-29 Varian Semiconductor Equipment Associates, Inc. Ion implant for defect control
US9299809B2 (en) * 2012-12-17 2016-03-29 Globalfoundries Inc. Methods of forming fins for a FinFET device wherein the fins have a high germanium content
US8957476B2 (en) * 2012-12-20 2015-02-17 Intel Corporation Conversion of thin transistor elements from silicon to silicon germanium
US9299840B2 (en) * 2013-03-08 2016-03-29 Taiwan Semiconductor Manufacturing Company, Ltd. FinFETs and methods for forming the same
US8895395B1 (en) * 2013-06-06 2014-11-25 International Business Machines Corporation Reduced resistance SiGe FinFET devices and method of forming same
US8952420B1 (en) * 2013-07-29 2015-02-10 Stmicroelectronics, Inc. Method to induce strain in 3-D microfabricated structures
US9142650B2 (en) * 2013-09-18 2015-09-22 Taiwan Semiconductor Manufacturing Company Limited Tilt implantation for forming FinFETs
CN103972104A (zh) * 2014-05-05 2014-08-06 清华大学 具有SiGe沟道的鳍式场效应晶体管及其形成方法

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US20160225881A1 (en) 2016-08-04
EP3072157A1 (en) 2016-09-28
CN105745757A (zh) 2016-07-06
US20150145069A1 (en) 2015-05-28
WO2015076957A1 (en) 2015-05-28

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