JP2017512383A - 中にギャップが画定されている半導体デバイス - Google Patents

中にギャップが画定されている半導体デバイス Download PDF

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Publication number
JP2017512383A
JP2017512383A JP2016555816A JP2016555816A JP2017512383A JP 2017512383 A JP2017512383 A JP 2017512383A JP 2016555816 A JP2016555816 A JP 2016555816A JP 2016555816 A JP2016555816 A JP 2016555816A JP 2017512383 A JP2017512383 A JP 2017512383A
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semiconductor device
spacer
spacer structure
gate
contact
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JP2016555816A
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JP2017512383A5 (enExample
Inventor
ジェフリー・ジュンハオ・シュ
カーン・リム
ジョン・ジエンホン・ズ
スタンリー・スンチュル・ソン
ムスタファ・バダログル
ヴラディミール・マチュカオトサン
ダ・ヤン
チョ・フェイ・イェプ
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クアルコム，インコーポレイテッド
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/675—Gate sidewall spacers
    • H10D64/679—Gate sidewall spacers comprising air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/024—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/024—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET]
    • H10D30/0243—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET] using dummy structures having essentially the same shapes as the semiconductor bodies, e.g. to provide stability
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/62—Fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/015—Manufacture or treatment removing at least parts of gate spacers, e.g. disposable spacers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/017—Manufacture or treatment using dummy gates in processes wherein at least parts of the final gates are self-aligned to the dummy gates, i.e. replacement gate processes

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  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
JP2016555816A 2014-03-10 2015-03-04 中にギャップが画定されている半導体デバイス Ceased JP2017512383A (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201461950681P 2014-03-10 2014-03-10
US61/950,681 2014-03-10
US14/341,568 US9871121B2 (en) 2014-03-10 2014-07-25 Semiconductor device having a gap defined therein
US14/341,568 2014-07-25
PCT/US2015/018806 WO2015138202A1 (en) 2014-03-10 2015-03-04 Semiconductor device having a gap defined therein

Publications (2)

Publication Number Publication Date
JP2017512383A true JP2017512383A (ja) 2017-05-18
JP2017512383A5 JP2017512383A5 (enExample) 2018-03-08

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JP2016555816A Ceased JP2017512383A (ja) 2014-03-10 2015-03-04 中にギャップが画定されている半導体デバイス

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US (2) US9871121B2 (enExample)
EP (1) EP3117464A1 (enExample)
JP (1) JP2017512383A (enExample)
KR (1) KR20160132011A (enExample)
CN (1) CN106104807B (enExample)
WO (1) WO2015138202A1 (enExample)

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US10056468B2 (en) * 2016-09-07 2018-08-21 Globalfoundries Inc. Source/drain parasitic capacitance reduction in FinFET-based semiconductor structure having tucked fins
US11088033B2 (en) 2016-09-08 2021-08-10 International Business Machines Corporation Low resistance source-drain contacts using high temperature silicides
US10164104B2 (en) * 2016-11-04 2018-12-25 Globalfoundries Inc. Method to form air-gap spacers and air-gap spacer-containing structures
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US10319627B2 (en) * 2016-12-13 2019-06-11 Globalfoundries Inc. Air-gap spacers for field-effect transistors
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US10916478B2 (en) * 2018-02-20 2021-02-09 Globalfoundries U.S. Inc. Methods of performing fin cut etch processes for FinFET semiconductor devices
US10636894B2 (en) * 2018-03-09 2020-04-28 Globalfoundries Inc. Fin-type transistors with spacers on the gates
US10573724B2 (en) 2018-04-10 2020-02-25 International Business Machines Corporation Contact over active gate employing a stacked spacer
KR102505065B1 (ko) 2018-04-26 2023-03-02 삼성전자주식회사 게이트 분리 영역을 포함하는 반도체 소자
US10861953B2 (en) * 2018-04-30 2020-12-08 Taiwan Semiconductor Manufacturing Company, Ltd. Air spacers in transistors and methods forming same
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US10510861B1 (en) * 2018-06-15 2019-12-17 Taiwan Semiconductor Manufacturing Company, Ltd. Gaseous spacer and methods of forming same
US10522644B1 (en) * 2018-06-21 2019-12-31 Globalfoundries Inc. Different upper and lower spacers for contact
US11869891B2 (en) 2018-09-28 2024-01-09 Intel Corporation Non-planar integrated circuit structures having mitigated source or drain etch from replacement gate process
US10818659B2 (en) * 2018-10-16 2020-10-27 Globalfoundries Inc. FinFET having upper spacers adjacent gate and source/drain contacts
US10868130B2 (en) 2018-10-31 2020-12-15 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method of manufacture
US10903111B2 (en) 2019-03-20 2021-01-26 International Business Machines Corporation Semiconductor device with linerless contacts
CN111863963A (zh) * 2019-04-24 2020-10-30 中芯国际集成电路制造(上海)有限公司 半导体器件及其形成方法
US11769814B2 (en) * 2019-06-27 2023-09-26 Intel Corporation Device including air gapping of gate spacers and other dielectrics and process for providing such
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US11600695B2 (en) 2020-05-29 2023-03-07 Taiwan Semiconductor Manufacturing Co., Ltd. Dielectric fins with air gap and backside self-aligned contact
KR102827570B1 (ko) 2020-12-08 2025-06-30 삼성전자주식회사 반도체 장치
KR102800629B1 (ko) * 2020-12-10 2025-04-24 삼성전자주식회사 반도체 장치
US20220231023A1 (en) * 2021-01-15 2022-07-21 Taiwan Semiconductor Manufacturing Co., Ltd. Finfet device and method
US11489060B2 (en) 2021-02-08 2022-11-01 Nanya Technology Corporation Semiconductor device with gate spacer and manufacturing method of the semiconductor device
US11848384B2 (en) * 2021-09-27 2023-12-19 International Business Machines Corporation Semiconductor device with airgap spacer formation from backside of wafer
US11876117B2 (en) 2021-10-18 2024-01-16 International Business Machines Corporation Field effect transistor with reduced parasitic capacitance and resistance
CN117096172A (zh) * 2022-05-12 2023-11-21 中芯国际集成电路制造(上海)有限公司 半导体结构及其形成方法

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Also Published As

Publication number Publication date
US9871121B2 (en) 2018-01-16
CN106104807A (zh) 2016-11-09
CN106104807B (zh) 2019-04-23
US20150255571A1 (en) 2015-09-10
US20180114848A1 (en) 2018-04-26
EP3117464A1 (en) 2017-01-18
US10079293B2 (en) 2018-09-18
KR20160132011A (ko) 2016-11-16
WO2015138202A1 (en) 2015-09-17

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