KR20160132011A - 내부에 정의된 갭을 갖는 반도체 디바이스 - Google Patents

내부에 정의된 갭을 갖는 반도체 디바이스 Download PDF

Info

Publication number
KR20160132011A
KR20160132011A KR1020167023420A KR20167023420A KR20160132011A KR 20160132011 A KR20160132011 A KR 20160132011A KR 1020167023420 A KR1020167023420 A KR 1020167023420A KR 20167023420 A KR20167023420 A KR 20167023420A KR 20160132011 A KR20160132011 A KR 20160132011A
Authority
KR
South Korea
Prior art keywords
semiconductor device
spacer
spacer structure
gate
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020167023420A
Other languages
English (en)
Korean (ko)
Inventor
제프리 준하오 수
컨 림
존 지안홍 주
스탠리 승철 송
머스타파 바다로그루
블라디미르 마크카우츠안
다 양
초 페이 예프
Original Assignee
퀄컴 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 퀄컴 인코포레이티드 filed Critical 퀄컴 인코포레이티드
Publication of KR20160132011A publication Critical patent/KR20160132011A/ko
Ceased legal-status Critical Current

Links

Images

Classifications

    • H01L29/4991—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/675—Gate sidewall spacers
    • H10D64/679—Gate sidewall spacers comprising air gaps
    • H01L29/6653—
    • H01L29/66545—
    • H01L29/66795—
    • H01L29/6681—
    • H01L29/785—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/024—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/024—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET]
    • H10D30/0243—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET] using dummy structures having essentially the same shapes as the semiconductor bodies, e.g. to provide stability
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/62—Fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/015—Manufacture or treatment removing at least parts of gate spacers, e.g. disposable spacers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/017—Manufacture or treatment using dummy gates in processes wherein at least parts of the final gates are self-aligned to the dummy gates, i.e. replacement gate processes

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
KR1020167023420A 2014-03-10 2015-03-04 내부에 정의된 갭을 갖는 반도체 디바이스 Ceased KR20160132011A (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201461950681P 2014-03-10 2014-03-10
US61/950,681 2014-03-10
US14/341,568 US9871121B2 (en) 2014-03-10 2014-07-25 Semiconductor device having a gap defined therein
US14/341,568 2014-07-25
PCT/US2015/018806 WO2015138202A1 (en) 2014-03-10 2015-03-04 Semiconductor device having a gap defined therein

Publications (1)

Publication Number Publication Date
KR20160132011A true KR20160132011A (ko) 2016-11-16

Family

ID=54018206

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020167023420A Ceased KR20160132011A (ko) 2014-03-10 2015-03-04 내부에 정의된 갭을 갖는 반도체 디바이스

Country Status (6)

Country Link
US (2) US9871121B2 (enExample)
EP (1) EP3117464A1 (enExample)
JP (1) JP2017512383A (enExample)
KR (1) KR20160132011A (enExample)
CN (1) CN106104807B (enExample)
WO (1) WO2015138202A1 (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200050336A (ko) * 2018-10-31 2020-05-11 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 반도체 디바이스 및 제조 방법
KR20210148861A (ko) * 2020-05-29 2021-12-08 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 공기 간극 및 후측 자가 정렬 접촉부를 갖는 유전체 핀들
KR20220080852A (ko) * 2020-12-08 2022-06-15 삼성전자주식회사 반도체 장치
KR20220082482A (ko) * 2020-12-10 2022-06-17 삼성전자주식회사 반도체 장치
US11600695B2 (en) 2020-05-29 2023-03-07 Taiwan Semiconductor Manufacturing Co., Ltd. Dielectric fins with air gap and backside self-aligned contact

Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8921191B2 (en) * 2013-02-05 2014-12-30 GlobalFoundries, Inc. Integrated circuits including FINFET devices with lower contact resistance and reduced parasitic capacitance and methods for fabricating the same
US9871121B2 (en) 2014-03-10 2018-01-16 Qualcomm Incorporated Semiconductor device having a gap defined therein
US9312360B2 (en) * 2014-05-01 2016-04-12 International Business Machines Corporation FinFET with epitaxial source and drain regions and dielectric isolated channel region
KR20160148795A (ko) * 2015-06-16 2016-12-27 삼성전자주식회사 반도체 소자 및 이의 제조 방법
DE102016102679B4 (de) 2015-09-15 2024-09-12 Taiwan Semiconductor Manufacturing Co., Ltd. Fets und verfahren zum bilden von fets
US10164029B2 (en) 2015-12-18 2018-12-25 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structure and manufacturing method thereof
US9627514B1 (en) * 2015-12-28 2017-04-18 Samsung Electronics Co., Ltd. Semiconductor device and method of fabricating the same
US9570567B1 (en) 2015-12-30 2017-02-14 Taiwan Semiconductor Manufacturing Co., Ltd. Source and drain process for FinFET
US9608065B1 (en) * 2016-06-03 2017-03-28 International Business Machines Corporation Air gap spacer for metal gates
US9892961B1 (en) 2016-08-09 2018-02-13 International Business Machines Corporation Air gap spacer formation for nano-scale semiconductor devices
US10056468B2 (en) * 2016-09-07 2018-08-21 Globalfoundries Inc. Source/drain parasitic capacitance reduction in FinFET-based semiconductor structure having tucked fins
US11088033B2 (en) 2016-09-08 2021-08-10 International Business Machines Corporation Low resistance source-drain contacts using high temperature silicides
US10164104B2 (en) * 2016-11-04 2018-12-25 Globalfoundries Inc. Method to form air-gap spacers and air-gap spacer-containing structures
CN108231590B (zh) 2016-12-09 2023-03-14 Imec 非营利协会 水平纳米线半导体器件
US10319627B2 (en) * 2016-12-13 2019-06-11 Globalfoundries Inc. Air-gap spacers for field-effect transistors
DE102017113681B4 (de) * 2016-12-14 2024-12-24 Taiwan Semiconductor Manufacturing Co. Ltd. Halbleiter-bauelement mit luft-abstandshalter und herstellungsverfahren
US10229983B1 (en) 2017-11-16 2019-03-12 International Business Machines Corporation Methods and structures for forming field-effect transistors (FETs) with low-k spacers
CN109962014B (zh) * 2017-12-26 2022-10-04 中芯国际集成电路制造(上海)有限公司 半导体结构及其形成方法
US10580875B2 (en) * 2018-01-17 2020-03-03 Globalfoundries Inc. Middle of line structures
TWI705529B (zh) 2018-02-15 2020-09-21 美商應用材料股份有限公司 空氣間隙形成處理
US10916478B2 (en) * 2018-02-20 2021-02-09 Globalfoundries U.S. Inc. Methods of performing fin cut etch processes for FinFET semiconductor devices
US10636894B2 (en) * 2018-03-09 2020-04-28 Globalfoundries Inc. Fin-type transistors with spacers on the gates
US10573724B2 (en) 2018-04-10 2020-02-25 International Business Machines Corporation Contact over active gate employing a stacked spacer
KR102505065B1 (ko) 2018-04-26 2023-03-02 삼성전자주식회사 게이트 분리 영역을 포함하는 반도체 소자
US10861953B2 (en) * 2018-04-30 2020-12-08 Taiwan Semiconductor Manufacturing Company, Ltd. Air spacers in transistors and methods forming same
US10608096B2 (en) 2018-06-11 2020-03-31 International Business Machines Corporation Formation of air gap spacers for reducing parasitic capacitance
US10510861B1 (en) * 2018-06-15 2019-12-17 Taiwan Semiconductor Manufacturing Company, Ltd. Gaseous spacer and methods of forming same
US10522644B1 (en) * 2018-06-21 2019-12-31 Globalfoundries Inc. Different upper and lower spacers for contact
US11869891B2 (en) 2018-09-28 2024-01-09 Intel Corporation Non-planar integrated circuit structures having mitigated source or drain etch from replacement gate process
US10818659B2 (en) * 2018-10-16 2020-10-27 Globalfoundries Inc. FinFET having upper spacers adjacent gate and source/drain contacts
US10903111B2 (en) 2019-03-20 2021-01-26 International Business Machines Corporation Semiconductor device with linerless contacts
CN111863963A (zh) * 2019-04-24 2020-10-30 中芯国际集成电路制造(上海)有限公司 半导体器件及其形成方法
US11769814B2 (en) * 2019-06-27 2023-09-26 Intel Corporation Device including air gapping of gate spacers and other dielectrics and process for providing such
US20220231023A1 (en) * 2021-01-15 2022-07-21 Taiwan Semiconductor Manufacturing Co., Ltd. Finfet device and method
US11489060B2 (en) 2021-02-08 2022-11-01 Nanya Technology Corporation Semiconductor device with gate spacer and manufacturing method of the semiconductor device
US11848384B2 (en) * 2021-09-27 2023-12-19 International Business Machines Corporation Semiconductor device with airgap spacer formation from backside of wafer
US11876117B2 (en) 2021-10-18 2024-01-16 International Business Machines Corporation Field effect transistor with reduced parasitic capacitance and resistance
CN117096172A (zh) * 2022-05-12 2023-11-21 中芯国际集成电路制造(上海)有限公司 半导体结构及其形成方法

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3544833B2 (ja) * 1997-09-18 2004-07-21 株式会社東芝 半導体装置及びその製造方法
US6180988B1 (en) 1997-12-04 2001-01-30 Texas Instruments-Acer Incorporated Self-aligned silicided MOSFETS with a graded S/D junction and gate-side air-gap structure
US6737716B1 (en) * 1999-01-29 2004-05-18 Kabushiki Kaisha Toshiba Semiconductor device and method of manufacturing the same
TW476135B (en) 2001-01-09 2002-02-11 United Microelectronics Corp Manufacture of semiconductor with air gap
JP2004119549A (ja) * 2002-09-25 2004-04-15 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
KR100487656B1 (ko) 2003-08-12 2005-05-03 삼성전자주식회사 반도체 기판과 ″ｌ″형 스페이서 사이에 에어 갭을구비하는 반도체 소자 및 그 제조 방법
DE102004052388B4 (de) 2004-10-28 2016-05-25 Infineon Technologies Ag Halbleiterbauelement sowie zugehöriges Herstellungsverfahren
JP2007200972A (ja) * 2006-01-24 2007-08-09 Nec Electronics Corp 半導体装置およびその製造方法
US8428048B2 (en) * 2006-02-21 2013-04-23 Qualcomm Incorporated Multi-program viewing in a wireless apparatus
US7691712B2 (en) 2006-06-21 2010-04-06 International Business Machines Corporation Semiconductor device structures incorporating voids and methods of fabricating such structures
US7994040B2 (en) 2007-04-13 2011-08-09 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and fabrication thereof
US7915659B2 (en) 2008-03-06 2011-03-29 Micron Technology, Inc. Devices with cavity-defined gates and methods of making the same
US7838373B2 (en) * 2008-07-30 2010-11-23 Intel Corporation Replacement spacers for MOSFET fringe capacitance reduction and processes of making same
US8362568B2 (en) 2009-08-28 2013-01-29 International Business Machines Corporation Recessed contact for multi-gate FET optimizing series resistance
US8232618B2 (en) 2010-08-11 2012-07-31 International Business Machines Corporation Semiconductor structure having a contact-level air gap within the interlayer dielectrics above a semiconductor device and a method of forming the semiconductor structure using a self-assembly approach
US8390079B2 (en) 2010-10-28 2013-03-05 International Business Machines Corporation Sealed air gap for semiconductor chip
US20120199886A1 (en) 2011-02-03 2012-08-09 International Business Machines Corporation Sealed air gap for semiconductor chip
KR20120121795A (ko) 2011-04-27 2012-11-06 에스케이하이닉스 주식회사 에어 갭을 포함하는 스페이서를 구비한 반도체 소자의 제조방법
CN102214595B (zh) 2011-05-26 2012-10-10 北京大学 一种空气为侧墙的围栅硅纳米线晶体管的制备方法
US8471343B2 (en) 2011-08-24 2013-06-25 International Bussiness Machines Corporation Parasitic capacitance reduction in MOSFET by airgap ild
US8637930B2 (en) 2011-10-13 2014-01-28 International Business Machines Company FinFET parasitic capacitance reduction using air gap
US20130299920A1 (en) 2012-05-08 2013-11-14 Haizhou Yin Semiconductor device and method for manufacturing the same
US9871121B2 (en) 2014-03-10 2018-01-16 Qualcomm Incorporated Semiconductor device having a gap defined therein
US9559184B2 (en) * 2015-06-15 2017-01-31 Taiwan Semiconductor Manufacturing Company, Ltd. Devices including gate spacer with gap or void and methods of forming the same

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200050336A (ko) * 2018-10-31 2020-05-11 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 반도체 디바이스 및 제조 방법
US10868130B2 (en) 2018-10-31 2020-12-15 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method of manufacture
US11631746B2 (en) 2018-10-31 2023-04-18 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method of manufacture
US12068389B2 (en) 2018-10-31 2024-08-20 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device including gas spacers and method of manufacture
KR20210148861A (ko) * 2020-05-29 2021-12-08 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 공기 간극 및 후측 자가 정렬 접촉부를 갖는 유전체 핀들
US11600695B2 (en) 2020-05-29 2023-03-07 Taiwan Semiconductor Manufacturing Co., Ltd. Dielectric fins with air gap and backside self-aligned contact
US12166071B2 (en) 2020-05-29 2024-12-10 Taiwan Semiconductor Manufacturing Co., Ltd. Dielectric fins with air gap and backside self-aligned contact
KR20220080852A (ko) * 2020-12-08 2022-06-15 삼성전자주식회사 반도체 장치
US12328902B2 (en) 2020-12-08 2025-06-10 Samsung Electronics Co., Ltd. Semiconductor devices
KR20220082482A (ko) * 2020-12-10 2022-06-17 삼성전자주식회사 반도체 장치

Also Published As

Publication number Publication date
US9871121B2 (en) 2018-01-16
CN106104807A (zh) 2016-11-09
CN106104807B (zh) 2019-04-23
US20150255571A1 (en) 2015-09-10
US20180114848A1 (en) 2018-04-26
JP2017512383A (ja) 2017-05-18
EP3117464A1 (en) 2017-01-18
US10079293B2 (en) 2018-09-18
WO2015138202A1 (en) 2015-09-17

Similar Documents

Publication Publication Date Title
US10079293B2 (en) Semiconductor device having a gap defined therein
US9349656B2 (en) Method of forming a complementary metal-oxide-semiconductor (CMOS) device
US10439039B2 (en) Integrated circuits including a FinFET and a nanostructure FET
US9799560B2 (en) Self-aligned structure
US9425296B2 (en) Vertical tunnel field effect transistor
JP6130610B2 (ja) 複数のフィン高を有するフィン電界効果トランジスタを製造するシステムおよび方法
US9245971B2 (en) Semiconductor device having high mobility channel
US20160049487A1 (en) Device including cavity and self-aligned contact and method of fabricating the same
US9263522B2 (en) Transistor with a diffusion barrier
US20160126144A1 (en) Methods of forming a metal-insulator-semiconductor (mis) structure and a dual contact device

Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20160825

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
A201 Request for examination
A302 Request for accelerated examination
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20180206

Comment text: Request for Examination of Application

PA0302 Request for accelerated examination

Patent event date: 20180206

Patent event code: PA03022R01D

Comment text: Request for Accelerated Examination

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20180226

Patent event code: PE09021S01D

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20180717

Patent event code: PE09021S01D

E601 Decision to refuse application
PE0601 Decision on rejection of patent

Patent event date: 20181121

Comment text: Decision to Refuse Application

Patent event code: PE06012S01D

Patent event date: 20180717

Comment text: Notification of reason for refusal

Patent event code: PE06011S01I

Patent event date: 20180226

Comment text: Notification of reason for refusal

Patent event code: PE06011S01I