JP2013504178A - 製品基板をキャリア基板から剥離するための装置及び方法 - Google Patents
製品基板をキャリア基板から剥離するための装置及び方法 Download PDFInfo
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Abstract
さらに、本発明は、製品基板をキャリア基板から剥離するための方法に関し、前記キャリア基板は、相互接続層により前記製品基板に接続されており、フレキシブルフィルムはフィルムフレームに取り付けられ、該フレキシブルフィルムの接合面部において前記製品基板を保持するための接着層を備え、該フレキシブルフィルムは前記接合面部を囲む該フィルムの取付部において前記フィルムフレームに取り付けられ、該フレキシブルフィルムは、前記接合面部と前記取付部との間に位置する剥離部を備え、前記剥離手段により、前記製品基板が前記キャリア基板から前記基板の外周より剥離される方法。
Description
D 厚さ
E 平面
1 フィルムフレーム
1i 内周
2 キャリア基板
3 フィルム
3a 剥離部
3b 取付部
3k 接合面部
3s 接着層
4 製品基板
4u 外周
6 相互接続層
7 キャリア基板ホルダ
8 真空管
9 槽状部
10 音響伝達装置
11 流体
20 溶剤貯蔵部
21 外側周壁
22 溶剤
Claims (15)
- 製品基板(4)をキャリア基板(2)から剥離するための装置であって、
前記キャリア基板(2)は、相互接続層(6)により前記製品基板(4)に接続され、
フレキシブルフィルム(3)はフィルムフレーム(1)に取り付けられ、該フィルム(3)の接合面部(3k)において前記製品基板(4)を保持するための接着層(3s)を備え、該フィルム(3)は、前記接合面部(3k)を囲む、該フィルム(3)の取付部(3b)において、前記フィルムフレーム(1)に取り付けられ、該フィルム(3)は、前記接合面部(3k)と前記取付部(3b)との間に位置する剥離部(3a)を備え、
前記装置は前記製品基板(4)が前記キャリア基板(2)から前記製品基板(4)の外周(4u)より剥離させる剥離手段を有することを特徴とする装置。 - 前記剥離手段に加えて、前記相互接続層(6)によってなされる前記キャリア基板(2)と製品基板(4)との接続を少なくとも部分的に取り外すための接続解除手段を備えることを特徴とする請求項1に記載の装置。
- 前記接続解除手段は、前記相互接続層(6)を少なくとも部分的に取り外すための流体手段、特に該相互接続層を選択的に溶解する溶剤(22)を備えることを特徴とする請求項2に記載の装置。
- 前記接続解除手段は、前記相互接続層(6)を少なくとも部分的に取り外すための、機械的分離手段、特に該相互接続層を切断するためのブレードを備えることを特徴とする請求項2に記載の装置。
- 前記接続解除手段は、前記相互接続層(6)を少なくとも部分的に取り外すための紫外線源を備えることを特徴とする請求項2に記載の装置。
- 前記接続解除手段は、特に前記外周(4u)部位に限って作用するように作られていることを特徴とする請求項2に記載の装置。
- 前記剥離部(3a)は、前記製品基板(4)の外面形状の外側に位置し、及び/又は、前記接合面部(3k)に隣接することを特徴とする請求項1に記載の装置。
- 前記相互接続層(6)を前記流体手段にさらすために、該流体手段を収容するための溶剤貯蔵部(20)を備え、該溶剤貯蔵部は前記キャリア基板又はキャリア基板ホルダ(7)に固定され、密封され、該貯蔵部の上端は少なくとも前記製品基板(4)によって定められる平面まで伸展していることを特徴とする請求項2又は3に記載の装置。
- 前記キャリア基板に作用する力Fsと、前記フィルムフレーム(1)に作用し、前記力Fsとは反対方向の力Ffによって剥離が行われることを特徴とする請求項1に記載の装置。
- 前記フィルム(3)は、前記剥離部(3a)において、前記力Fsと力Ffとによって伸長することを特徴とする請求項9に記載の装置。
- 前記力Fsと力Ffとによって、前記フィルムフレーム(1)は前記キャリア基板(2)に対して変位することで、前記フィルムフレーム(1)の内側に、前記製品基板及び/又は溶剤(22)に音波を伝えるための音波発生手段を備える槽状部(9)が形成され、
該音波発生手段は、槽上部(19)に保たれる流体(11)と、該流体(11)内に沈められる音響伝達装置(10)とから形成される、ことを特徴とする請求項9又は10に記載の装置。 - 前記製品基板(4)は、該製品基板(4)の前記外周(4u)から中心(4z)へ同心円状に剥離されることを特徴とする請求項1に記載の装置。
- 前記製品基板(4)は、剥離工程の間、前記フィルム(3)に接着するように作られていることを特徴とする請求項1に記載の装置。
- キャリア基板(2)から製品基板(4)を剥離するための方法であって、
前記キャリア基板(2)は、相互接続層(6)により前記製品基板(4)に接続されており、
フレキシブルフィルム(3)はフィルムフレーム(1)に取り付けられ、該フィルム(3)の接合面部(3k)において前記製品基板(4)を保持するための接着層(3s)を備え、該フィルム(3)は前記接合面部(3k)を囲む、該フィルム(3)の取付部(3b)において、前記フィルムフレーム(1)に取り付けられ、該フィルム(3)は、前記接合面部(3k)と前記取付部(3b)との間に位置する剥離部(3a)を備え、
前記剥離手段により、前記製品基板(4)が前記キャリア基板(2)から前記製品基板(4)の外周(4u)より剥離されることを特徴とする方法。 - 前記製品基板(4)は、該製品基板(4)の前記外周(4u)から中心(4z)へ同心円状に剥離されることを特徴とする請求項14に記載の方法。
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Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014176831A (ja) * | 2013-03-15 | 2014-09-25 | Lintec Corp | 光照射装置および照射方法 |
JP2015144319A (ja) * | 2011-10-27 | 2015-08-06 | ズース マイクロテック リトグラフィー ゲゼルシャフト ミット ベシュレンクテル ハフツング | 一時的に接着された半導体ウエハの剥離方法 |
JP2016066821A (ja) * | 2016-01-19 | 2016-04-28 | 東京エレクトロン株式会社 | 剥離装置、剥離システムおよび剥離方法 |
JP2018133485A (ja) * | 2017-02-16 | 2018-08-23 | 株式会社ディスコ | ウエーハ生成方法 |
JP2018133484A (ja) * | 2017-02-16 | 2018-08-23 | 株式会社ディスコ | ウエーハ生成方法 |
WO2022230505A1 (ja) * | 2021-04-28 | 2022-11-03 | 東洋紡株式会社 | 高分子フィルムの剥離方法、電子デバイスの製造方法、及び、剥離装置 |
Families Citing this family (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2706561B1 (de) * | 2009-09-01 | 2017-04-05 | EV Group GmbH | Verfahren zum konzentrischen Ablösen eines Produktsubstrats (z.B. eines Halbleiterwafers) von einem Trägersubstrat durch Verformung eines auf einem Filmrahmen montierten flexiblen Films |
KR101570917B1 (ko) | 2011-04-11 | 2015-11-20 | 에베 그룹 에. 탈너 게엠베하 | 가요성의 캐리어 마운트 및 캐리어 기판을 분리하기 위한 장치 및 방법 |
NL2008630A (en) * | 2011-04-27 | 2012-10-30 | Asml Netherlands Bv | Substrate holder, lithographic apparatus, device manufacturing method, and method of manufacturing a substrate holder. |
WO2013036638A2 (en) * | 2011-09-06 | 2013-03-14 | Brewer Science Inc. | Use of megasonic energy to assist edge bond removal in a zonal temporary bonding process |
KR102355643B1 (ko) | 2011-12-22 | 2022-01-25 | 에베 그룹 에. 탈너 게엠베하 | 가요성 기판 홀더, 제1 기판을 분리하기 위한 장치 및 방법 |
JP5807554B2 (ja) * | 2012-01-19 | 2015-11-10 | 旭硝子株式会社 | 剥離装置、及び電子デバイスの製造方法 |
US8834662B2 (en) * | 2012-03-22 | 2014-09-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Apparatus and method of separating wafer from carrier |
DE102012111246A1 (de) | 2012-11-21 | 2014-05-22 | Ev Group E. Thallner Gmbh | Vorrichtung und Verfahren zum Bonden |
JP5909453B2 (ja) * | 2013-03-07 | 2016-04-26 | 東京エレクトロン株式会社 | 剥離装置、剥離システムおよび剥離方法 |
JP2015023137A (ja) * | 2013-07-18 | 2015-02-02 | 株式会社ディスコ | 剥離装置及び剥離方法 |
US9751293B2 (en) | 2014-12-04 | 2017-09-05 | Industrial Technology Research Institute | Laminated substrate separating device and method for separating laminated substrate |
SG11201603148VA (en) * | 2014-12-18 | 2016-07-28 | Ev Group E Thallner Gmbh | Method for bonding substrates |
JP2016146429A (ja) * | 2015-02-09 | 2016-08-12 | トヨタ自動車株式会社 | 半導体装置の製造方法 |
JP2017163009A (ja) * | 2016-03-10 | 2017-09-14 | 東芝メモリ株式会社 | 半導体装置の製造方法 |
US10913254B2 (en) * | 2017-03-15 | 2021-02-09 | Didrew Technology (Bvi) Limited | Method for debonding temporarily adhesive-bonded carrier-workpiece pair by using chemical and mechanical means |
US10211077B2 (en) | 2017-03-17 | 2019-02-19 | Didrew Technology (Bvi) Limited | Method for debonding temporarily adhesive-bonded carrier-workpiece pair by using high pressure solvent |
TWI674639B (zh) * | 2017-03-31 | 2019-10-11 | 日月光半導體製造股份有限公司 | 元件剝離裝置及元件剝離方法 |
CN108155270B (zh) * | 2017-12-13 | 2019-09-20 | 北京创昱科技有限公司 | 一种薄膜与晶片的分离装置和分离方法 |
WO2019117987A1 (en) | 2017-12-15 | 2019-06-20 | Didrew Technology (Bvi) Limited | System and method of embedding driver ic (emdic) in lcd display substrate |
WO2019135783A1 (en) | 2018-01-04 | 2019-07-11 | Didrew Technology (Bvi) Limited | Frameless lcd display with embedded ic system and method of manufacturing thereof |
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WO2019160570A1 (en) | 2018-02-15 | 2019-08-22 | Didrew Technolgy (Bvi) Limited | System and method of fabricating tim-less hermetic flat top his/emi shield package |
WO2019160566A1 (en) | 2018-02-15 | 2019-08-22 | Didrew Technology (Bvi) Limited | Method of simultaneously fabricating multiple wafers on large carrier with warpage control stiffener |
US11177153B2 (en) | 2018-03-20 | 2021-11-16 | Chengdu Eswin Sip Technology Co., Ltd. | Method of debonding work-carrier pair with thin devices |
JP7146354B2 (ja) * | 2019-01-22 | 2022-10-04 | 株式会社ディスコ | キャリア板の除去方法 |
TWI772676B (zh) * | 2019-09-04 | 2022-08-01 | 達明機器人股份有限公司 | 貼紙剝離裝置 |
CN110690158B (zh) * | 2019-09-25 | 2022-03-22 | 云谷(固安)科技有限公司 | 剥离装置及剥离方法 |
CN111025445B (zh) * | 2019-12-10 | 2021-11-30 | 深圳先进技术研究院 | 一种基于pdms的柔性光栅的制作方法及装置 |
CN113634544B (zh) * | 2021-08-16 | 2022-09-16 | 湖北三维半导体集成创新中心有限责任公司 | 晶圆清洗机构 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06268051A (ja) * | 1993-03-10 | 1994-09-22 | Mitsubishi Electric Corp | ウエハ剥し装置 |
JP2005353859A (ja) * | 2004-06-11 | 2005-12-22 | Taiyo Yuden Co Ltd | 半導体ウェハの剥離方法 |
JP2006032506A (ja) * | 2004-07-14 | 2006-02-02 | Taiyo Yuden Co Ltd | 半導体ウェハの剥離方法および剥離装置 |
JP2006059861A (ja) * | 2004-08-17 | 2006-03-02 | Lintec Corp | 脆質部材の転着装置 |
JP2006135272A (ja) * | 2003-12-01 | 2006-05-25 | Tokyo Ohka Kogyo Co Ltd | 基板のサポートプレート及びサポートプレートの剥離方法 |
JP2006156679A (ja) * | 2004-11-29 | 2006-06-15 | Tokyo Ohka Kogyo Co Ltd | サポートプレートの貼り付け装置 |
JP2008109123A (ja) * | 2006-09-29 | 2008-05-08 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
JP2009182067A (ja) * | 2008-01-30 | 2009-08-13 | Tokyo Ohka Kogyo Co Ltd | 基板を含む積層体および基板の処理方法 |
Family Cites Families (59)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3988196A (en) * | 1967-10-09 | 1976-10-26 | Western Electric Company, Inc. | Apparatus for transferring an oriented array of articles |
US5273615A (en) * | 1992-04-06 | 1993-12-28 | Motorola, Inc. | Apparatus and method for handling fragile semiconductor wafers |
JPH06275717A (ja) * | 1993-01-22 | 1994-09-30 | Mitsubishi Electric Corp | ウエハはがし方法 |
JP4220580B2 (ja) | 1995-02-10 | 2009-02-04 | 三菱電機株式会社 | 半導体装置の製造装置 |
JP3407835B2 (ja) | 1995-03-09 | 2003-05-19 | 東京応化工業株式会社 | 基板端縁部被膜の除去方法及び除去装置 |
US6342434B1 (en) * | 1995-12-04 | 2002-01-29 | Hitachi, Ltd. | Methods of processing semiconductor wafer, and producing IC card, and carrier |
US6066229A (en) * | 1997-07-10 | 2000-05-23 | Sony Corporation | Method of recycling disk recording medium and apparatus for recovering metal reflective film |
DE19734635A1 (de) * | 1997-08-11 | 1999-02-18 | Gen Semiconductor Ireland Macr | Verfahren und Vorrichtung zum Ablösen von Bauelementen von einer Folie |
US6076585A (en) * | 1998-03-02 | 2000-06-20 | Motorola, Inc. | Method of manufacturing a semiconductor device and apparatus therefor |
US6090687A (en) | 1998-07-29 | 2000-07-18 | Agilent Technolgies, Inc. | System and method for bonding and sealing microfabricated wafers to form a single structure having a vacuum chamber therein |
JP2000091305A (ja) * | 1998-09-14 | 2000-03-31 | Sony Corp | 半導体製造用ウェットエッチング装置 |
KR100292075B1 (ko) * | 1998-12-29 | 2001-07-12 | 윤종용 | 반도체소자제조용웨이퍼처리장치 |
JP2001196404A (ja) | 2000-01-11 | 2001-07-19 | Fujitsu Ltd | 半導体装置及びその製造方法 |
JP3768069B2 (ja) | 2000-05-16 | 2006-04-19 | 信越半導体株式会社 | 半導体ウエーハの薄型化方法 |
DE10048881A1 (de) | 2000-09-29 | 2002-03-07 | Infineon Technologies Ag | Vorrichtung und Verfahren zum planen Verbinden zweier Wafer für ein Dünnschleifen und ein Trennen eines Produkt-Wafers |
US6523557B2 (en) | 2000-12-13 | 2003-02-25 | Imtec Acculine, Inc. | Megasonic bath |
JP2002203821A (ja) * | 2000-12-28 | 2002-07-19 | Mitsubishi Gas Chem Co Inc | 接着および剥離法 |
US6713880B2 (en) | 2001-02-07 | 2004-03-30 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device and method for producing the same, and method for mounting semiconductor device |
JP2002237515A (ja) | 2001-02-07 | 2002-08-23 | Mitsubishi Gas Chem Co Inc | 薄葉化半導体基板の剥離装置および剥離法 |
DE10108369A1 (de) | 2001-02-21 | 2002-08-29 | B L E Lab Equipment Gmbh | Verfahren und Vorrichtung zum Ablösen eines Halbleiterwafers von einem Träger |
AT502233B1 (de) * | 2001-06-07 | 2007-04-15 | Thallner Erich | Vorrichtung zum lösen eines trägers von einer halbleiterscheibe |
JP4632590B2 (ja) * | 2001-08-30 | 2011-02-16 | キヤノンアネルバ株式会社 | 基板搬送システム及び基板処理装置 |
US6726848B2 (en) | 2001-12-07 | 2004-04-27 | Scp Global Technologies, Inc. | Apparatus and method for single substrate processing |
CN1269119C (zh) | 2002-03-27 | 2006-08-09 | 松下电器产业株式会社 | 制造多层光学信息记录介质的方法 |
JP4271409B2 (ja) * | 2002-05-22 | 2009-06-03 | リンテック株式会社 | 脆質材料の加工方法 |
TWI258316B (en) | 2002-10-25 | 2006-07-11 | Ritdisplay Corp | FPD encapsulation apparatus and method for encapsulating ehereof |
JP2004193237A (ja) | 2002-12-10 | 2004-07-08 | Disco Abrasive Syst Ltd | 粘着シートを具備するウェハー保持部材,及び粘着シートの剥離方法 |
JP4614626B2 (ja) * | 2003-02-05 | 2011-01-19 | 東京エレクトロン株式会社 | 薄肉半導体チップの製造方法 |
JP2004296839A (ja) * | 2003-03-27 | 2004-10-21 | Kansai Paint Co Ltd | 半導体チップの製造方法 |
JP4364535B2 (ja) * | 2003-03-27 | 2009-11-18 | シャープ株式会社 | 半導体装置の製造方法 |
DE10340409B4 (de) | 2003-09-02 | 2007-05-24 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Trägerwafer und Verfahren zum Bearbeiten eines Halbleiterwafers unter Verwendung eines Trägerwafers |
JP2005109259A (ja) * | 2003-09-30 | 2005-04-21 | Toshiba Corp | 基板処理装置及びその処理方法 |
JP2005116588A (ja) * | 2003-10-03 | 2005-04-28 | Sony Corp | チップ部品の製造方法 |
JP4592270B2 (ja) * | 2003-10-06 | 2010-12-01 | 日東電工株式会社 | 半導体ウエハの支持材からの剥離方法およびこれを用いた装置 |
JP4447280B2 (ja) | 2003-10-16 | 2010-04-07 | リンテック株式会社 | 表面保護用シートおよび半導体ウエハの研削方法 |
DE102004018250A1 (de) | 2004-04-15 | 2005-11-03 | Infineon Technologies Ag | Wafer-Stabilisierungsvorrichtung und Verfahren zu dessen Herstellung |
US7829152B2 (en) | 2006-10-05 | 2010-11-09 | Lam Research Corporation | Electroless plating method and apparatus |
JP4848153B2 (ja) * | 2005-08-10 | 2011-12-28 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
JP4721828B2 (ja) * | 2005-08-31 | 2011-07-13 | 東京応化工業株式会社 | サポートプレートの剥離方法 |
JP4668052B2 (ja) | 2005-12-06 | 2011-04-13 | 東京応化工業株式会社 | 剥離装置 |
DE102006000687B4 (de) | 2006-01-03 | 2010-09-09 | Thallner, Erich, Dipl.-Ing. | Kombination aus einem Träger und einem Wafer, Vorrichtung zum Trennen der Kombination und Verfahren zur Handhabung eines Trägers und eines Wafers |
JP4895671B2 (ja) * | 2006-05-08 | 2012-03-14 | 株式会社ディスコ | 加工装置 |
JP2008021929A (ja) | 2006-07-14 | 2008-01-31 | Tokyo Ohka Kogyo Co Ltd | サポートプレート、搬送装置、剥離装置及び剥離方法 |
CN101114454A (zh) * | 2006-07-28 | 2008-01-30 | 新科实业有限公司 | 一种磁头分离辅助装置及磁头分离方法 |
JP5233106B2 (ja) * | 2006-09-28 | 2013-07-10 | 凸版印刷株式会社 | レンズシートの製造方法及び製造装置 |
TWI611565B (zh) * | 2006-09-29 | 2018-01-11 | 半導體能源研究所股份有限公司 | 半導體裝置的製造方法 |
JP4733074B2 (ja) | 2007-06-11 | 2011-07-27 | リンテック株式会社 | 分離装置及び分離方法 |
JP4964107B2 (ja) * | 2007-12-03 | 2012-06-27 | 東京応化工業株式会社 | 剥離装置 |
WO2009094558A2 (en) * | 2008-01-24 | 2009-07-30 | Brewer Science Inc. | Method for reversibly mounting a device wafer to a carrier substrate |
JP2009182256A (ja) * | 2008-01-31 | 2009-08-13 | Tokyo Ohka Kogyo Co Ltd | 基板の処理装置および基板の処理方法 |
JP5271554B2 (ja) * | 2008-02-04 | 2013-08-21 | 東京応化工業株式会社 | サポートプレート |
JP4965485B2 (ja) * | 2008-02-29 | 2012-07-04 | 東京応化工業株式会社 | 処理液浸透ユニットおよび処理装置 |
CN101990498B (zh) | 2008-04-11 | 2013-10-30 | 亚利桑那董事会代表亚利桑那州立大学行事的亚利桑那州法人团体 | 用于松解下部安装的基底的方法和设备 |
CN101582265A (zh) * | 2008-05-12 | 2009-11-18 | 新科实业有限公司 | 磁头分离辅助装置及利用该装置制造磁头的方法 |
JP5291392B2 (ja) * | 2008-06-18 | 2013-09-18 | 東京応化工業株式会社 | 支持板剥離装置 |
EP2402981B1 (de) * | 2009-03-18 | 2013-07-10 | EV Group GmbH | Vorrichtung und Verfahren zum Ablösen eines Wafers von einem Träger |
US9847243B2 (en) | 2009-08-27 | 2017-12-19 | Corning Incorporated | Debonding a glass substrate from carrier using ultrasonic wave |
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WO2013036638A2 (en) | 2011-09-06 | 2013-03-14 | Brewer Science Inc. | Use of megasonic energy to assist edge bond removal in a zonal temporary bonding process |
-
2009
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Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06268051A (ja) * | 1993-03-10 | 1994-09-22 | Mitsubishi Electric Corp | ウエハ剥し装置 |
JP2006135272A (ja) * | 2003-12-01 | 2006-05-25 | Tokyo Ohka Kogyo Co Ltd | 基板のサポートプレート及びサポートプレートの剥離方法 |
JP2005353859A (ja) * | 2004-06-11 | 2005-12-22 | Taiyo Yuden Co Ltd | 半導体ウェハの剥離方法 |
JP2006032506A (ja) * | 2004-07-14 | 2006-02-02 | Taiyo Yuden Co Ltd | 半導体ウェハの剥離方法および剥離装置 |
JP2006059861A (ja) * | 2004-08-17 | 2006-03-02 | Lintec Corp | 脆質部材の転着装置 |
JP2006156679A (ja) * | 2004-11-29 | 2006-06-15 | Tokyo Ohka Kogyo Co Ltd | サポートプレートの貼り付け装置 |
JP2008109123A (ja) * | 2006-09-29 | 2008-05-08 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
JP2009182067A (ja) * | 2008-01-30 | 2009-08-13 | Tokyo Ohka Kogyo Co Ltd | 基板を含む積層体および基板の処理方法 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015144319A (ja) * | 2011-10-27 | 2015-08-06 | ズース マイクロテック リトグラフィー ゲゼルシャフト ミット ベシュレンクテル ハフツング | 一時的に接着された半導体ウエハの剥離方法 |
JP2014176831A (ja) * | 2013-03-15 | 2014-09-25 | Lintec Corp | 光照射装置および照射方法 |
JP2016066821A (ja) * | 2016-01-19 | 2016-04-28 | 東京エレクトロン株式会社 | 剥離装置、剥離システムおよび剥離方法 |
JP2018133485A (ja) * | 2017-02-16 | 2018-08-23 | 株式会社ディスコ | ウエーハ生成方法 |
JP2018133484A (ja) * | 2017-02-16 | 2018-08-23 | 株式会社ディスコ | ウエーハ生成方法 |
WO2022230505A1 (ja) * | 2021-04-28 | 2022-11-03 | 東洋紡株式会社 | 高分子フィルムの剥離方法、電子デバイスの製造方法、及び、剥離装置 |
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