JP4668052B2 - 剥離装置 - Google Patents
剥離装置 Download PDFInfo
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- JP4668052B2 JP4668052B2 JP2005352525A JP2005352525A JP4668052B2 JP 4668052 B2 JP4668052 B2 JP 4668052B2 JP 2005352525 A JP2005352525 A JP 2005352525A JP 2005352525 A JP2005352525 A JP 2005352525A JP 4668052 B2 JP4668052 B2 JP 4668052B2
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- peeling
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- semiconductor wafer
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- 239000002904 solvent Substances 0.000 claims description 58
- 239000004065 semiconductor Substances 0.000 claims description 46
- 238000004140 cleaning Methods 0.000 claims description 33
- 239000000853 adhesive Substances 0.000 claims description 11
- 230000001070 adhesive effect Effects 0.000 claims description 11
- 238000000034 method Methods 0.000 description 13
- 239000000758 substrate Substances 0.000 description 10
- 239000007788 liquid Substances 0.000 description 9
- 238000011084 recovery Methods 0.000 description 7
- 230000032258 transport Effects 0.000 description 6
- 230000002093 peripheral effect Effects 0.000 description 4
- 239000012790 adhesive layer Substances 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 241000270666 Testudines Species 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
- H01L21/67225—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one lithography chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10S156/918—Delaminating processes adapted for specified product, e.g. delaminating medical specimen slide
- Y10S156/93—Semiconductive product delaminating, e.g. delaminating emiconductive wafer from underlayer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10S156/934—Apparatus having delaminating means adapted for delaminating a specified article
- Y10S156/941—Means for delaminating semiconductive product
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/10—Methods of surface bonding and/or assembly therefor
- Y10T156/1052—Methods of surface bonding and/or assembly therefor with cutting, punching, tearing or severing
- Y10T156/1062—Prior to assembly
- Y10T156/107—Punching and bonding pressure application by punch
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/10—Methods of surface bonding and/or assembly therefor
- Y10T156/1052—Methods of surface bonding and/or assembly therefor with cutting, punching, tearing or severing
- Y10T156/108—Flash, trim or excess removal
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/11—Methods of delaminating, per se; i.e., separating at bonding face
- Y10T156/1111—Using solvent during delaminating [e.g., water dissolving adhesive at bonding face during delamination, etc.]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/19—Delaminating means
- Y10T156/1928—Differential fluid pressure delaminating means
- Y10T156/1944—Vacuum delaminating means [e.g., vacuum chamber, etc.]
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Description
即ち、先ず半導体ウェーハの回路(素子)形成面(A面)にサポートプレート又は保護テープを貼り付け、これを反転して半導体ウェーハの裏面(B面)をグラインダーで研削して薄板化する。次にこの薄板化された半導体ウェーハの裏面(B面)に別の回路を形成し、ダイシングフレームに保持されているダイシングテープ上に固定する。そして、この状態で半導体ウェーハの回路(素子)形成面(A面)を覆っているサポートプレート又は保護テープを剥離する。この後は、ダイシング装置によりチップ毎に切り離す(特許文献1参照)。
また、Oリング61周辺から溶剤が漏れた場合には、ダイシングフレーム66のダイシングテープ67に溶剤がかかり、例えば積層体からダイシングテープ67が剥がれる問題が生じていた。
また上述のように各処理装置を別々に配置したことによる生じていた、基板の搬送時間(例えば剥離装置から洗浄装置、反転装置から剥離装置等)も短縮でき、剥離工程に係る時間のさらなる短縮化を図ることもできる。
従って、装置構成を簡略化できる上、剥離工程に要する時間も短縮化でき、且つ上述したような溶剤がかかることにより積層体からダイシングテープが剥がれる問題や汚染等も低減できる。
また、洗浄手段を組み込んだことにより、例えば洗浄手段で用いた溶剤を、サポートプレートを剥離する剥離手段で用いることも可能になり溶剤(新液)の使用量を削減できる。
従って、基板からサポートプレートを剥離する際に用いられる装置として好適であり、高性能且つ高信頼性を有する剥離装置を実現することができる。
図1は本発明に係る剥離装置の一実施の形態を示す全体平面図、図2は剥離装置の剥離手段を示す正面図、図3は剥離手段の剥離プレートを示す平面図である。
なお、以下に示す各実施の形態においては、剥離装置において、ダイシングテープマウンタが組み込まれた構成を先に説明し、ダイシングテープマウンタが組み込まれない構成を後に説明する。
なお、半導体ウェーハの表面を洗浄する際は、例えば新液供給タンクからの新液(例えばアルコールや有機シンナー等)を使用し、洗浄後の使用済み溶剤は溶剤回収タンクに回収される。
なお、剥離工程を説明する前に、用いられる積層体30の具体的構成を説明する。
これにより、溶剤は中心部より溝32b内をつたって周縁部へと行き渡り、接着剤33を溶解する。接着剤33が溶解された溶剤は溶剤回収用の凹部23に自重で流下する。なお、流下した溶剤は上述した溶剤回収タンクに回収される。
この後は、溶剤供給孔21を利用して、半導体ウェーハ31の下面にエアパージを行い、半導体ウェーハ31の下面を乾燥させる。
なお、洗浄に用いられる溶剤は、上述したように溶剤供給手段の新液供給タンクより配管を通じて供給され、洗浄に用いられた溶剤は、溶剤回収タンクに回収される。
また各処理装置を別々に配置したことによる生じていた積層体の搬送時間も大幅に短縮でき、剥離工程を短縮化できる。
また剥離手段に積層体30を反転させる剥離プレート20も備えているので、別途特別な反転装置を組み込むことなく、チャックプレート10上に積層体30(チャックプレート10に半導体ウェーハ側がくるように)を短時間で容易に載置でき、チャックプレート10及び積層体30に対して下方から溶剤を注入することが可能になる。これにより、装置構成を簡略化できる上、剥離工程に要する時間を短縮化でき、且つ溶剤がかかることによる積層体30からダイシングテープが剥がれる問題等も低減できる。
例えば、以前では、剥離装置及び洗浄装置とそれぞれ単体で配置していたため、剥離装置では20ml/minを10min間行い、洗浄装置では250ml/minを1min間行っていたので450mlの溶剤(新液)を用いねばならなかった。しかし、剥離手段(剥離装置)4及び洗浄手段(洗浄装置)5を一体化させた剥離装置の場合は、洗浄手段で以前と同様の250ml/minを1min間行うが、剥離手段では、全て洗浄手段で用いた溶剤を10min再利用できるので、溶剤(新液)の使用量を大幅に低減することが可能になった。
上述した実施の形態では、搬送ロボット1、カセット3、剥離手段4、洗浄手段5、ダイシングテープマウンタ等から構成された剥離装置を説明したが、ダイシングテープマウンタを組み込まない剥離装置も考えられる。
Claims (3)
- 半導体ウェーハとサポートプレートとが貼り合わされた積層体からサポートプレートを剥離する剥離装置であって、搬送ロボットと、該搬送ロボットの周囲に配置されたカセットと、剥離手段と、半導体ウェーハを洗浄する洗浄手段とを少なくとも有し、
前記剥離手段は、前記積層体の半導体ウェーハ側を吸着保持するチャックプレートと前記積層体からサポートプレートを剥離する剥離プレートを備え、前記チャックプレートはその上面に積層体を吸着保持した状態から180°反転し積層体を下向きにするとともに上下方向に昇降動し、また前記剥離プレートは中央部に半導体ウェーハとサポートプレートとの間の接着剤を溶解する溶剤を供給する複数の溶剤供給孔が形成され、上面にはサポートプレートを真空吸着するための真空源につながる溝が形成され、上面の周囲には溶剤回収用の凹部が形成され、前記サポートプレートの中央には貫通孔が形成され、この貫通孔の位置は前記剥離プレートの溶剤供給孔の位置と一致することを特徴とする剥離装置。 - 請求項1に記載の剥離装置において、前記剥離手段が、前記積層体を保持したまま垂直面内で180°反転するチャックプレートと、反転機構のない剥離プレートが組み合わされた構成であることを特徴とする剥離装置。
- 請求項1または2に記載の剥離装置において、前記積層体の半導体ウェーハ側にはダイシングテープが貼り合わされていることを特徴とする剥離装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005352525A JP4668052B2 (ja) | 2005-12-06 | 2005-12-06 | 剥離装置 |
TW095144096A TW200731388A (en) | 2005-12-06 | 2006-11-29 | Stripping means and stripping apparatus |
US11/633,499 US7849905B2 (en) | 2005-12-06 | 2006-12-04 | Stripping device and stripping apparatus |
KR1020060122162A KR100826768B1 (ko) | 2005-12-06 | 2006-12-05 | 박리수단 및 박리장치 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005352525A JP4668052B2 (ja) | 2005-12-06 | 2005-12-06 | 剥離装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007158114A JP2007158114A (ja) | 2007-06-21 |
JP4668052B2 true JP4668052B2 (ja) | 2011-04-13 |
Family
ID=38117682
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005352525A Expired - Fee Related JP4668052B2 (ja) | 2005-12-06 | 2005-12-06 | 剥離装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7849905B2 (ja) |
JP (1) | JP4668052B2 (ja) |
KR (1) | KR100826768B1 (ja) |
TW (1) | TW200731388A (ja) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
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DE102006000687B4 (de) | 2006-01-03 | 2010-09-09 | Thallner, Erich, Dipl.-Ing. | Kombination aus einem Träger und einem Wafer, Vorrichtung zum Trennen der Kombination und Verfahren zur Handhabung eines Trägers und eines Wafers |
JP5227554B2 (ja) * | 2007-08-30 | 2013-07-03 | 東京応化工業株式会社 | 基板処理装置および基板処理方法 |
JP4801644B2 (ja) * | 2007-08-30 | 2011-10-26 | 東京応化工業株式会社 | 基板保持装置、基板処理装置および基板処理方法 |
EP2402981B1 (de) | 2009-03-18 | 2013-07-10 | EV Group GmbH | Vorrichtung und Verfahren zum Ablösen eines Wafers von einem Träger |
EP2290679B1 (de) | 2009-09-01 | 2016-05-04 | EV Group GmbH | Vorrichtung und Verfahren zum Ablösen eines Produktsubstrats (z.B. eines Halbleiterwafers) von einem Trägersubstrat durch Verformung eines auf einem Filmrahmen montierten flexiblen Films |
TWI534938B (zh) * | 2010-02-25 | 2016-05-21 | 尼康股份有限公司 | Substrate separation device, manufacturing method of semiconductor device, load lock device, substrate bonding device and substrate separation method |
EP2523209B1 (de) | 2010-04-23 | 2017-03-08 | EV Group GmbH | Vorrichtung und Verfahren zum Ablösen eines Produktsubstrats von einem Trägersubstrat |
JP5807554B2 (ja) * | 2012-01-19 | 2015-11-10 | 旭硝子株式会社 | 剥離装置、及び電子デバイスの製造方法 |
JP2013251348A (ja) * | 2012-05-30 | 2013-12-12 | Tokyo Ohka Kogyo Co Ltd | 基板保持装置及び基板処理装置 |
CN104685607B (zh) * | 2012-09-19 | 2017-09-15 | 应用材料公司 | 接合基板的方法 |
JP7146354B2 (ja) * | 2019-01-22 | 2022-10-04 | 株式会社ディスコ | キャリア板の除去方法 |
US11791212B2 (en) * | 2019-12-13 | 2023-10-17 | Micron Technology, Inc. | Thin die release for semiconductor device assembly |
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JP4450696B2 (ja) * | 2004-08-19 | 2010-04-14 | 日東電工株式会社 | 保護テープ貼付け装置 |
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JP2002237515A (ja) * | 2001-02-07 | 2002-08-23 | Mitsubishi Gas Chem Co Inc | 薄葉化半導体基板の剥離装置および剥離法 |
JP2002343756A (ja) * | 2001-05-21 | 2002-11-29 | Tokyo Seimitsu Co Ltd | ウェーハ平面加工装置 |
JP2005216948A (ja) * | 2004-01-27 | 2005-08-11 | Renesas Technology Corp | 半導体装置の製造方法および製造装置 |
JP2005317712A (ja) * | 2004-04-28 | 2005-11-10 | Lintec Corp | ウエハ処理装置 |
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TWI371790B (ja) | 2012-09-01 |
KR100826768B1 (ko) | 2008-04-30 |
JP2007158114A (ja) | 2007-06-21 |
US20070125751A1 (en) | 2007-06-07 |
KR20070059993A (ko) | 2007-06-12 |
TW200731388A (en) | 2007-08-16 |
US7849905B2 (en) | 2010-12-14 |
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