TW201234443A - Peeling apparatus, peeling system, peeling method, and computer storage medium - Google Patents

Peeling apparatus, peeling system, peeling method, and computer storage medium Download PDF

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Publication number
TW201234443A
TW201234443A TW100129956A TW100129956A TW201234443A TW 201234443 A TW201234443 A TW 201234443A TW 100129956 A TW100129956 A TW 100129956A TW 100129956 A TW100129956 A TW 100129956A TW 201234443 A TW201234443 A TW 201234443A
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TW
Taiwan
Prior art keywords
holding
substrate
peeling
processed
wafer
Prior art date
Application number
TW100129956A
Other languages
Chinese (zh)
Inventor
Osamu Hirakawa
Naoto Yoshitaka
Masataka Matsunaga
Norihiko Okamoto
Original Assignee
Tokyo Electron Ltd
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Publication date
Priority to JP2010185896 priority Critical
Priority to JP2011155992A priority patent/JP5455987B2/en
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW201234443A publication Critical patent/TW201234443A/en

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Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67098Apparatus for thermal treatment
    • H01L21/67103Apparatus for thermal treatment mainly by conduction
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67092Apparatus for mechanical treatment

Abstract

A peeling apparatus, for peeling a superimposed substrate to obtain a substrate to be processed and a support substrate, comprises: a first holding section that is provided with a heating mechanism for heating the substrate to be processed, and that holds the substrate to be processed; a second holding section that is provided with a heating mechanism for heating the support substrate, and that holds the support substrate; and a moving mechanism that holds an outer circumference section of the second holding section and moves the same in the vertical direction, so that the support substrate held by the second holding section will peel off successively from the substrate to be processed held by the first holding section, from the outer circumference section side thereof towards the center section side thereof.

Description

201234443 6. Technical Field [Technical Field] The present invention relates to a peeling device for peeling a laminated substrate into a substrate to be processed and a supporting substrate, a peeling system including the peeling device, a peeling method using the peeling device, and a program [Computer Memory Media] [Prior Art] In recent years, for example, in the manufacturing process of a semiconductor device, a large diameter has progressed toward a semiconductor wafer (hereinafter referred to as "wafer"). Furthermore, in a specific project such as mounting, it is required to make the wafer thinner, and when directly transporting, for example, a large-diameter and thin wafer, or performing a honing process, there is warpage or cracking of the wafer. . Therefore, for example, in order to reinforce the wafer, a wafer or a glass substrate on which the wafer is attached, for example, to a support substrate is performed. Then, after the specific processing of the honing process of the wafer is performed in such a state that the wafer and the supporting substrate are bonded in this manner, the wafer and the supporting substrate are peeled off. The peeling of the wafer and the supporting substrate is performed using, for example, a peeling device. . The peeling device has a first holder that holds, for example, a wafer, and a second holder that holds the supporting substrate, and a nozzle that ejects liquid between the wafer and the supporting substrate. Then, the stripping device is preferably a jetting force that is greater than the bonding strength by more than twice the bonding strength between the bonded wafer and the supporting substrate from the nozzle to the bonding strength between the wafer and the supporting substrate. The liquid is ejected and the liquid is peeled off from the support substrate (Patent Document 1). [Advanced Technical Literature] [Patent Literature]
[Patent Document 1] Japanese Laid-Open Patent Publication No. Hei 9-167724 (Problems to be Solved by the Invention) However, when the peeling device described in Patent Document 1 is used, a large injection pressure is applied. Liquid, so there is damage to the wafer or support substrate. In particular, since the wafer is thinned, it is easily damaged. Further, for example, when the wafer and the support substrate are bonded via the adhesive, since the bonding strength between the crystal wafer and the support substrate is large, it is necessary to eject a very large liquid, and it takes a long time to peel the wafer and the support substrate. The present invention has been made in view of the above problems, and an object thereof is to appropriately and efficiently perform a peeling treatment of a substrate to be processed and a support substrate. [Means for Solving the Problem] In order to achieve the above object, the present invention is a peeling device for peeling a superposed substrate on which a substrate to be processed and a support substrate are bonded by an adhesive to a substrate to be processed and a support substrate, and has a feature a holding unit including a heating mechanism for heating a substrate to be processed and holding the substrate to be processed, and a second holding portion including a heating and heating mechanism for heating the supporting substrate, and holding the supporting substrate; and a moving mechanism The support substrate held by the second holding portion is continuously peeled from the outer peripheral portion toward the center portion from the substrate to be processed held by the first holding portion, and the outer peripheral portion of the second holding portion is held in the vertical direction. mobile. If the stripping device of the present invention is used, it can be maintained while heating
In the substrate to be processed of the first holding portion and the support substrate held by the second holding portion, the outer peripheral portion of the second holding portion is moved in the vertical direction from the outer peripheral portion toward the central portion. The support substrate is continuously peeled off from the substrate to be processed. By heating in this way, the adhesive between the substrate to be processed and the support substrate can be softened, and the support substrate can be continuously peeled off from the substrate to be processed from the outer peripheral portion toward the center portion, so that the load can be reduced. It is easy to peel off the substrate to be processed and the support substrate. Therefore, the substrate to be processed is not damaged, and the substrate to be processed and the substrate to be supported can be appropriately and uniformly peeled off. Moreover, it is also possible to shorten the time required for the peeling process as compared with the prior art. Therefore, according to the present invention, the peeling treatment of the substrate to be processed and the support substrate can be appropriately and efficiently performed. In the moving mechanism, the outer peripheral portion of the second holding portion is moved in a circular direction in a circular direction, and the support substrate held by the second holding portion is held by the first holding portion from the outer peripheral portion toward the central portion. The substrate to be processed may be continuously peeled off. Even if the first holding portion is disposed above the second holding portion, the moving mechanism may move the second holding portion vertically downward, and the peeling device may have a rotating mechanism for rotating the first holding portion. . The moving mechanism includes the first moving portion that holds the outer peripheral portion of the second holding portion in the vertical direction while holding the second holding portion, and the first moving portion, and the first moving portion and the The second moving portion in which the second holding portion moves in the vertical direction may be used. 201234443, the first moving unit has a plurality of cylinders for moving the outer peripheral portion of the second holding portion in a vertical direction, and a support column for the second holding portion by the plurality of cylinders When the outer peripheral portion is moved in the vertical direction, the central portion of the second holding portion may be supported so that the position in the vertical direction of the central portion of the second holding portion does not change. The first moving portion has a stretchable body that is configured to hold the second holding portion and is expandable and contractible in a vertical direction, and a support post that is provided inside the expandable body, and the expandable body is contracted to the first When the outer peripheral portion of the holding portion is moved in the vertical direction, the central portion of the second holding portion is supported so that the position in the vertical direction of the central portion of the second holding portion does not change. According to another aspect of the present invention, a peeling system including the peeling apparatus includes a peeling processing apparatus including the peeling apparatus and the first washing of the substrate to be processed which is peeled off by the peeling apparatus. a cleaning device, a second cleaning device that washes the support substrate that has been peeled off by the peeling device, a loading/unloading station, a loading/unloading substrate, a supporting substrate, or a superposed substrate; and a conveying device A substrate to be processed, a support substrate, or a superposed substrate are transported between the peeling processing stage and the loading/unloading stage. The peeling system may have a interface table for transporting the substrate to be processed between the processing stations after the processing of the substrate to be processed which is peeled off by the peeling processing table. According to another aspect of the present invention, a superposition substrate on which a substrate to be processed and a support substrate are bonded by an adhesive is peeled off by using a peeling device.
S-8 - 201234443 A method for peeling off a substrate to be processed and a support substrate, characterized in that the peeling device includes a first holding portion that includes a heating mechanism that heats the substrate to be processed, and holds the substrate to be processed, and a second holding And a moving mechanism that holds the support substrate held by the second holding portion from the outer peripheral portion toward the central portion from the first holding portion. The outer peripheral portion of the second holding portion is moved in the vertical direction so that the substrate to be processed is continuously peeled off. The peeling method includes a first step of heating the substrate to be processed and held by the first holding portion. While holding the support substrate of the second holding portion, the outer peripheral portion of the second holding portion is moved in the vertical direction, and the support substrate is continuously peeled from the substrate to be processed from the outer peripheral portion toward the center portion; and the second After that, the second holding unit is moved in the vertical direction, and the substrate to be processed and the supporting substrate are peeled off. In the first project, the outer peripheral portion of the second holding portion is moved in the vertical direction in an annular shape, and the support substrate may be continuously peeled off from the substrate to be processed from the outer peripheral portion toward the central portion. The first holding portion may be disposed above the second holding portion, and the second holding portion may be moved vertically downward in the first project and the second project. The peeling device has a rotation mechanism for rotating the first holding portion, and in the first project, after the rotation of the first holding portion is started, the outer peripheral portion of the second holding portion is moved in the vertical direction. The outer peripheral portion may be continuously peeled off from the substrate to be processed toward the center portion. -9-201234443 In addition, according to the present invention of another aspect, a program for operating on a computer that controls the control unit of the peeling device in order to perform the peeling method by the peeling device is provided. A computer readable memory medium storing the above-described procedures is provided by the present invention in still another aspect. [Effect of the Invention] According to the present invention, the peeling treatment of the substrate to be processed and the support substrate can be appropriately and efficiently performed. [Embodiment] Hereinafter, embodiments of the present invention will be described. Fig. 1 is a plan view showing the configuration of the peeling system 1 according to the present embodiment. In the peeling system 1 'as shown in Fig. 2, the superposed wafer T as a superposed substrate is peeled off into a processed wafer w and a supporting wafer s, and the superposed substrate is bonded by the adhesive G The processed wafer W of the substrate and the wafer S as the supporting substrate are processed. Hereinafter, in the processed wafer w, 'the surface joined to the support wafer S via the adhesive G is referred to as "joining surface Wi"', and the surface opposite to the bonding surface W is referred to as "non-joining surface WN "." Similarly, in the support wafer S, a surface joined to the wafer w to be processed via the adhesive G is referred to as a "joining surface Si", and a surface opposite to the bonding surface Sj is referred to as a "non-joining surface sN". "." Further, the wafer W to be processed is a wafer to be a product, for example, a bonding surface |: a plurality of electronic circuits are formed. Furthermore, the processed wafer w is, for example, a non-joining surface Wn is honed
S -10- 201234443 is thinned (for example, the thickness is 50 μηι). The support wafer S has the same diameter as the diameter of the wafer W to be processed, and is a wafer supporting the processed wafer W. Further, in the present embodiment, the case where the wafer is used as the supporting substrate will be described, but other substrates such as a glass substrate may be used. As shown in Fig. 1, the peeling system 1 has a configuration in which the following members are integrally connected, and for example, a plurality of processed wafers W, a plurality of supporting wafers S, and a plurality of substrates can be accommodated and carried out between the outside and the outside. a loading/unloading station 2 for stacking wafers Cw, Cs, and CT of the wafer T; and a peeling processing station 3 for applying various processing means for performing specific processing on the processed wafer W, the supporting wafer S, and the superposed wafer T; The interface table 5 for receiving the processed wafer W is processed between the processing stations 4 after being adjacent to the peeling processing station 3. The loading/unloading stage 2 and the peeling processing table 3 are arranged in the X direction (the upper and lower directions in the first drawing). The wafer transfer region 6 is formed between the carry-in/out stages 2 and the peeling processing table 3. Further, the interface table 5 is disposed on the negative direction side (the left direction side in the first drawing) of the loading/unloading stage 2, the peeling processing stage 3, and the wafer conveyance area 6 in the Y direction. The cassette mounting table 10 is provided in the loading/unloading station 2. A plurality of, for example, three cassette mounting plates 11 are provided on the cassette mounting table 10. The cassette mounting plates 11 are arranged in a line in the Y direction (the horizontal direction in the first drawing). On the cassette mounting plates 11, the cassettes cw, Cs, and CT can be placed when the cassettes Cw, Cs, and CT are carried in and out of the peeling system 1. In this way, the loading/unloading station 2 is configured to support a plurality of supporting wafers S and a plurality of overlapping wafers τ that can hold a plurality of processed wafers. Further, the number of the cassette mounting plates -11 - 201234443 11 is not limited to this embodiment, and can be arbitrarily determined. Further, the plurality of superposed wafers τ that have been carried into the loading/unloading station 2 are inspected in advance, and are determined to be coincident with the superposed wafer T containing the normal processed wafer W and the processed wafer W containing the defect. Wafer T. The first conveyance device 20 is disposed in the wafer conveyance region 6. The first transporting device 2 has a transport arm that is freely movable in, for example, a vertical direction, a horizontal direction (Y direction, and an X direction) and a vertical axis. The first transport device 20 moves in the wafer transporting region 6, and the processed wafer W, the supporting wafer S, and the superposed wafer T can be transported between the loading/unloading station 2 and the peeling processing station 3. The peeling processing station 3 has a peeling device 30 that peels the superposed wafer T into a processed wafer W and a supporting wafer S. In the negative direction side of the Y direction of the peeling device 30 (the left side in the first drawing), the first cleaning device 31 for washing the peeled wafer W to be processed is disposed. A second conveying device 32 is provided between the peeling device 30 and the first cleaning device 31. Further, in the positive direction side (the right direction side in the first drawing) of the peeling device 30 in the Y direction, the second cleaning device 33 that washes the peeled supporting wafer S is disposed. In this way, in the peeling processing station 3, the first cleaning device 31, the second transfer device 32, and the peeling device 30 'the second cleaning device 3 are arranged in this order from the interface table 5 side" in the interface table. 5. A third transport device 41 that is freely movable on the transport path 40 extending in the X direction is provided. The third conveying device 41 is also movable in the vertical direction and around the vertical axis (0 direction), and the processed wafer W can be conveyed between the peeling processing table 3 and the post-processing table 4. Further, in the post-processing station 4, the peeling treatment table 3 is peeled off.
S -12- 201234443 The processed wafer W is subjected to specific post processing. For the specific post-processing, for example, a process of mounting the processed wafer W or performing an inspection of the electrical characteristics of the electronic circuit on the processed wafer W, and cutting the processed wafer W into each wafer Processing and so on. Next, the configuration of the above-described peeling device 30 will be described. The peeling device 30 has a processing container 100 capable of sealing the inside as shown in Fig. 3 . On the side surface of the processing container 100, a processing wafer W, a supporting wafer S, and a loading/unloading port (not shown) of the superposed wafer T are formed, and a switching shutter (not shown) is provided at the loading/unloading port. On the bottom surface of the processing container 100, an intake port 101 for attracting an atmosphere inside the processing container 100 is formed. At the intake port 101, an intake pipe 103 communicating with a negative pressure generating device 102 such as a vacuum pump is connected. Inside the processing container 100, a first holding portion 1 10 that adsorbs and holds the wafer W underneath and a second holding portion 111 on which the supporting wafer S is placed are provided. The first holding portion 110 is disposed above the second holding portion 111 and is disposed to face the second holding portion 111. In other words, in the inside of the processing container 1, the wafer w to be processed is placed on the upper side, and the supporting wafer S is placed on the lower side, and the superposed wafer T is peeled off. The first holding portion 1 10 uses, for example, a porous chuck. The first holding portion 110 has a flat body portion 120. A porous body 121 is provided on the lower surface side of the body portion 120. The porous body 121 has, for example, a diameter almost the same as that of the wafer W to be processed, and is in contact with the non-joining surface WN of the wafer W to be processed. Further, as the porous body 121, for example, tantalum carbide is used. Further, in the main body portion 120, a suction space 122 is formed above the porous body 121. The attraction space 122 is formed to cover, for example, the porous body 121. A suction pipe 123 is connected to the suction space 122. The suction pipe 123 is connected to a negative pressure generating device (not shown) such as a vacuum pump. Then, the non-joining surface WN of the wafer to be processed is sucked from the suction pipe 123 through the suction space 122 and the porous body 121, and the processed wafer W is adsorbed and held by the first holding portion 110. Further, inside the main body portion 120, above the suction space 122, a heating mechanism 124 for heating the wafer W to be processed is provided. The heating mechanism 124 uses, for example, a heater. A support plate 130 that supports the first holding portion 110 is provided on the upper surface of the first holding portion 110. The support plate 130 is supported on the ceiling surface of the processing container 100. Further, the support plate 130 of the present embodiment is omitted, and the first holding portion 110 may be supported even if it abuts against the ceiling surface of the processing container 100. Inside the second holding portion 111, a suction pipe 140 for holding and holding the supporting wafer S is provided. The suction pipe 140 is connected to a negative pressure generating device (not shown) such as a vacuum pump. Further, the second holding portion 111 is made of, for example, aluminum of an elastic body. Further, inside the second holding portion 111, a heating mechanism 141 for heating the support wafer S is provided. The heating mechanism 141 uses, for example, a heater made of aluminum. A moving mechanism that moves the second holding portion 111 and the supporting wafer S in the vertical direction and the horizontal direction is provided below the second holding portion 111.
S -14- 201234443 150. The moving mechanism 150 has a first vertical moving portion 151 that holds the second holding portion 111 and serves as a first moving portion that moves only the outer peripheral portion of the second holding portion 111 in the vertical direction, and holds the first vertical moving portion 151. And the second vertical moving portion 152 which is the second moving portion in which the first vertical moving portion 151 and the second holding portion 111 move in the vertical direction: and the first vertical moving portion 151, the second vertical moving portion 152, and the second The horizontal moving portion 153 in which the holding portion 111 moves in the horizontal direction. The first vertical moving portion 151, the second vertical moving portion 152, and the horizontal moving portion 153 are arranged in the vertical direction from the top. The first vertical moving portion 151 has a plurality of cylinders 160, a support column 161 that supports the central portion of the second holding portion 111, and a supporting cylinder that moves the outer peripheral portion of the second holding portion 111 in a circular shape in the vertical direction. 160 and a support plate 162 of the support column 101. As shown in Fig. 4, six cylinders 1 60 are disposed at equal intervals on the same circumference as the support plate 1 62. Further, the cylinders 160 are disposed at positions corresponding to the outer peripheral portion of the second holding portion 111. The support post 161 is disposed at a central portion of the support plate 162 and corresponds to a position of a central portion of the second holding portion 111. In other words, when the outer peripheral portion of the second holding portion 111 is moved vertically downward by the cylinder 160, the support column 161 is disposed so that the position of the central portion of the second holding portion 111 does not change in the vertical direction. As shown in Fig. 3, the second vertical moving portion 152 has a driving portion 170 for lifting and lowering the support plate 162, and a supporting member 171 for supporting the supporting plate 162. The drive unit 170 has, for example, a ball screw (not shown) and a motor (not shown) that rotates the ball screw. Furthermore, the support member 171 is constructed
-15-201234443 is expandable and contractible in the vertical direction, for example, three places are provided between the support plate 162 and the horizontal moving portion 153. The horizontal moving portion 153 has, for example, a ball screw (not shown) and a motor (not shown) that rotates the ball screw, and the first vertical moving portion 151, the second vertical moving portion 152, and the second holding portion 111 can be horizontal. Move in direction. Further, below the second holding portion 111, a lift pin (not shown) for supporting the wafer T or supporting the wafer S from below is provided. The insertion/reduction pin insertion is formed in the through hole (not shown) of the second holding portion 111, and can be protruded from the upper surface of the second holding portion 111. Next, the configuration of the first cleaning device 31 will be described. The first cleaning device 3 1 can seal the internal processing container 180 as shown in Fig. 5. On the side surface of the processing container 180, a loading/unloading port (not shown) of the wafer W to be processed is formed, and a switch shutter (not shown) is provided at the loading/unloading port. In the central portion of the processing container 180, a porous chuck 190 that holds the wafer W to be processed and rotated is provided. The porous chuck 190 has a flat body portion 191 and a porous body 192 provided on the upper surface side of the body portion 191. The porous body 192 has, for example, a diameter almost the same as that of the wafer W to be processed, and is in contact with the non-joining surface WN of the wafer W to be processed. Further, in the case of the porous body 192, for example, tantalum carbide is used. The suction pipe (not shown) is connected to the porous body 192, and the non-joining surface WN of the wafer W to be processed is sucked from the suction pipe through the porous body 192, whereby the processed wafer W can be adsorbed and maintained in porosity. Suction cup 1 90.
S -16- 201234443 A suction cup drive unit 193 is provided below the porous chuck 190. The porous chuck 1 90 can be rotated at a specific speed by 193. Further, in the chuck driving unit such as a cylinder driving source such as a cylinder, the porous chuck 190 is provided around the porous chuck 190, and a cup body 194 for taking out the liquid in which the wafer W is scattered or dropped is provided. In the surface, an exhaust pipe 195 is provided which discharges the recovered liquid, and the inside of the exhaust pipe 196 is evacuated. As shown in Fig. 6, a rail 200 extending in the Y direction (the sixth direction) is formed on the lower side in the X direction of the cup body 194. The track 200 is square from the side in the negative direction (left direction in FIG. 6) of the f direction, and the other side in the direction (the right direction in FIG. 6). On the orbit arm 2 0 1 . In the robot arm 201, as shown in Figs. 5 and 6, the cleaning liquid is supplied to the wafer W. For example, the cleaning robot arm 201 of the organic solvent is moved by the nozzle driving unit 200 as shown in Fig. 6 . Accordingly, the cleaning liquid nozzle 203 moves on the processed wafer W at the center portion of the processed wafer W to be in the cup body 1 94 outside the positive direction side of the cup body 194 in the Y direction. Further to the wafer W to be processed, the robot arm 201 adjusts the height of the cleaning liquid nozzle 203 by the nozzle driving unit 704. The cleaning liquid nozzle 203 uses, for example, a 2-fluid nozzle
For example, a motor or the like is provided by the suction cup driving unit 193 as an example. The collection is carried out from below the cup 194 and in the negative direction to the cup 194 (the left and right sides of the body 194 in the sixth figure to the right direction in the Y direction, and the organic support is attached to the liquid nozzle 203. In the track, it is possible to move from a plurality of portions 205, and it can be in the diameter direction. It can be freely removed. The cleaning liquid nozzle S 17· 201234443 2 03 is connected to the cleaning liquid nozzle as shown in Fig. 5 203 is supplied to the supply pipe 210 of the cleaning liquid. The supply pipe 210 is connected to the cleaning liquid supply source 211 in which the cleaning liquid is stored therein. The supply pipe 210 is provided with a valve or a flow rate adjusting unit including a flow for controlling the cleaning liquid. In addition, a supply pipe 213 for supplying an inert gas such as nitrogen to the cleaning liquid nozzle 203 is connected to the cleaning liquid nozzle 203. The supply pipe 213 is connected to a gas supply source 2 that stores an inert gas therein. 4. The supply pipe 2 1 3 is provided with a supply device group 215 including a valve for controlling the flow of the inert gas or a flow rate adjusting portion, etc. Then, the cleaning liquid and the inert gas are mixed in the cleaning liquid nozzle 203, and the cleaning is performed. The liquid nozzle 203 is supplied to the quilt In the following, the mixed cleaning liquid and the inert gas are simply referred to as "cleaning liquids". Further, under the porous suction cup 190, even if it is provided to be supported from below, it is disposed. The wafer W may be lifted or lowered (not shown). At this time, the lift pin is inserted into a through hole (not shown) formed in the porous chuck 190, and the lift pin 190 can be inserted from the porous chuck 190. Then, the lift pin is raised and lowered to replace the porous chuck 1 90, and the processed wafer W is transferred between the porous chuck 1 90. Further, the composition of the second cleaning device 33 The configuration of the first cleaning device 31 is almost the same as that of the first cleaning device 31. The second cleaning device 33 is provided with a rotary chuck 22A instead of the porous chuck 190 of the first cleaning device 31 as shown in Fig. 7. The suction cup 220 has a horizontal upper surface on which a suction port (not shown) for attracting, for example, the support wafer S is provided. By suction from the suction opening, the support wafer S can be adsorbed on the rotary suction cup 220.
S -18 - 201234443 The other configuration of the second cleaning device 33 is almost the same as the configuration of the first cleaning device 31, and thus the description thereof is omitted. Further, in the second cleaning device 33, even if the back surface of the support wafer S is disposed below the spin chuck 220, that is, the back surface rinse nozzle (not shown) for jetting the cleaning liquid on the non-joining surface SN can be borrowed. The peripheral portion of the non-joining surface SN of the supporting wafer S and the supporting wafer S is washed by the cleaning liquid sprayed from the back surface washing nozzle. Next, the configuration of the second conveying device 32 will be described. The second conveying device 32 has a white working chuck 230 that holds the processed crystal W as shown in Fig. 8. The white suction cup 230 floats the wafer W to be processed by ejecting air, and can hold the wafer W to be suspended while being held in a non-contact state. The white effort cup 230 is supported by the support arm 23 1 . The support arm 23 1 is supported by the first drive unit 232. With the first driving portion 232, the support arm 231 is rotatable around the horizontal axis and can be expanded and contracted in the horizontal direction. Below the first drive unit 232, a second drive unit 233 is provided. By the second driving portion 233, the first driving portion 23 2 is rotatable about the vertical axis and can be moved up and down in the vertical direction. Further, since the third conveying device 41 has the same configuration as that of the second conveying device 32, the description thereof will be omitted. However, the second driving unit 23 3 of the third conveying device 41 is attached to the conveying path 40 shown in Fig. 1, and the third conveying device 41 is movable on the conveying path 40. The above-described peeling system 1 is provided with a control unit 300 as shown in Fig. 1 . The control unit 300 is, for example, a computer and has a program storage unit (no picture)
S -19- 201234443 show). The program storage unit stores a program for controlling the processed wafer W, the supporting wafer S, and the superposed wafer T in the peeling system 1. Further, the program storage unit also stores a program for controlling the peeling process described later in the peeling system 1 by controlling the operation of the drive system such as the above-described various processing devices or transporting means. Moreover, the above program is a computer readable memory medium recorded on, for example, a computer readable hard disk (HD), a floppy disk (FD), a compact disk (CD), a magneto-optical disk (MO), and a card. It is also possible to install it to the control unit 300 from the company. Next, a method of peeling off the processed wafer W and the supporting wafer S by using the peeling system 1 configured as described above will be described. Fig. 9 is a flow chart showing an example of the main work of the peeling process. First, the cassette CT, the empty cassette Cw, and the empty cassette Cs in which a plurality of overlapping wafer cassettes are accommodated are placed on the specific cassette mounting plate 11 of the loading/unloading stage 2. The superposed wafer T in the cassette CT is taken out by the first conveying device 20, and conveyed to the peeling device 30 of the peeling processing station 3. At this time, the wafer W is transported while the wafer W to be processed is placed on the upper side and the support wafer S is placed on the lower side. The superposed wafer T carried into the peeling device 30 is adsorbed and held by the second holding portion 111. Then, as shown in FIG. 1 , the second holding unit 111 is moved by the second vertical moving unit 152 of the moving mechanism 150, and the first holding unit 110 and the second holding unit 111 are placed on the wafer T. And keep it. At this time, the non-joining surface WN of the wafer W to be processed is adsorbed and held by the first holding portion 110, and the non-joining surface SN of the supporting wafer S is adsorbed and held by the second holding portion 111.
After -20-S 201234443, the superposed wafer T is heated to a specific temperature, for example, 200 ° C by the heating mechanisms 124, 141. As a result, the adhesive G in the coincident wafer T is softened. Then, while the superposed wafer T is heated by the heating means 124, 141 to maintain the softened state of the adhesive G, the first vertical moving portion 151 of the moving mechanism 150 is only the second as shown in Fig. 1 The outer peripheral portion of the holding portion 111 moves in a circular shape vertically downward. In other words, when the outer peripheral portion of the second holding portion 111 moves vertically downward by the cylinder 160, the central portion of the second holding portion 111 is supported by the support column 161, and the central portion of the second holding portion 111 is vertically oriented. The location does not change. At this time, the support wafer S held by the second holding portion 111 is continuously peeled off from the outer peripheral portion toward the center portion from the processed wafer W held by the first holding portion 110. Here, as described above, since the electronic circuit is formed on the bonding surface W of the wafer W to be processed, when the processed wafer W and the supporting wafer S are peeled off once, the bonding surface W:, S 』 Heavy load, the electronic circuit on the joint surface W: is damaged. In this embodiment, since the supporting wafer S is continuously peeled off from the processed wafer W from the outer peripheral portion toward the central portion, the bonding surfaces W" and S are not subjected to a large load. Therefore, damage to the electronic circuit can be suppressed. Thereafter, in the state where only the central portion of the wafer W to be processed and the center portion of the supporting wafer s are followed, as shown in Fig. 12, the second holding portion 111 is entirely provided by the second vertical moving portion I52. Move vertically downwards. Then, the support wafer s is peeled off from the wafer W to be processed in a state where the outer peripheral portion of the support wafer S is bent to be vertically downward. After that, as shown in Figure i 3
In the first vertical movement portion 151, the second holding portion ill and the outer peripheral portion of the supporting wafer S are vertically moved upward, and the second holding portion 111 and the support wafer S are flattened. As a result, the wafer W to be processed held by the first holding portion 11 and the supporting wafer S held by the holding portion 111 are peeled off (the construction A1 in Fig. 9). Thereafter, the processed wafer W, which has been peeled off by the peeling device 30, is transported to the first cleaning device 31 by the second transport device 32. Here, a method of transporting the processed wafer W by the second transfer device 32 will be described. As shown in Fig. 14, the support arm 231 is extended, and the white-powered suction cup 230 is disposed below the wafer W to be processed held by the first holding portion 110. Thereafter, the white working chuck 230 is raised, and the suction of the processed wafer W from the suction tube 1 2 3 in the first holding portion 1 1 0 is stopped. Then, the processed crystal W is taken up from the first holding portion 110 to the white working chuck 230. At this time, the bonding surface W of the processed wafer W is held by the white working chuck 230, but the white working chuck 23 holds the processed wafer W in a non-contact state, so there is no processed wafer W. The joint surface W; the electronic circuit is damaged. Next, as shown in Fig. 15, the support arm 23 1 is rotated to move the white-powered suction cup 230 above the porous suction cup 190 of the first cleaning device 31, and the white-powered suction cup 23 0 is reversed to be The wafer W is processed facing downward. At this time, the porous chuck 190 is raised above the cup 194 to stand by. Thereafter, the wafer W to be processed is received from the white suction cup 230 to the porous chuck 1 90 and adsorbed and held.
S -22-201234443 In this manner, when the wafer W to be processed is adsorbed and held by the porous chuck 190, the porous chuck 190 is lowered to a specific position. Next, the cleaning nozzle 203 of the standby unit 205 is moved to the upper side of the center portion of the wafer W to be processed by the robot arm 201. Thereafter, the wafer W to be processed is rotated by the porous chuck 190, and the cleaning liquid is supplied from the cleaning liquid nozzle 203 to the bonding surface W of the wafer W to be processed. The supplied cleaning liquid is diffused to the entire surface of the bonding surface Wj of the wafer W to be processed by centrifugal force, and the bonding surface of the processing wafer W is cleaned (Fig. 9). Here, the plurality of superposed wafers T that have been carried into the loading/unloading station 2 as described above are inspected in advance, and are identified as a superposed wafer T containing a normal processed wafer W and a processed wafer containing the defective wafer. W coincides with wafer T. The normal processed wafer w peeled off from the normal coincident wafer T is transported to the post-processing station 4 by the third transport device 41 after being cleaned on the project A2 joint surface W. Further, the conveyance of the wafer W to be processed by the third conveyance device 41 is almost the same as the conveyance of the wafer W to be processed by the second conveyance device 32, and thus the description thereof will be omitted. Thereafter, in the post-processing station 4, the processed wafer W is subjected to a specific post-processing (Project A 3 in Fig. 9). As a result, the processed wafer w is processed. Further, the processed wafer w having defects which are peeled off from the defective wafer T is washed on the surface of the project A2, and then transported to the loading/unloading station 2 by the first conveying device 20. After that, the defective processed wafer W is carried out from the loading/unloading stage 2 to the outside and is recovered -23-201234443 (Project A4 in Fig. 9). While the process A2 to A4 are being performed on the wafer W to be processed, the support wafer S which has been peeled off by the peeling device 30 is transported to the second cleaning device 33 by the first conveyance device 20. Then, in the second cleaning device 33, the bonding surface of the supporting wafer S is cleaned, and the construction A5) of Fig. 9 is performed. Further, the cleaning of the support wafer S in the second cleaning device 33 is the same as the cleaning of the wafer W to be processed in the first cleaning device 31, and therefore the description is omitted. Thereafter, the bonded surface S and the supported supporting wafer S are transported to the loading/unloading stage 2 by the first transporting device 20. After that, the support wafer s is carried out from the loading/unloading stage 2 to the outside and is collected (engineering 6 of Fig. 9). In this way, the stripping process of the series of processed wafers W and the supporting wafers S is ended. When the above-described type of peeling device 30 is implemented, the substrate W to be held by the first holding portion 110 and the supporting wafer S held by the second holding portion 111 can be heated while the second wafer is held. The outer peripheral portion of the holding portion 111 moves vertically downward, and the support wafer S is continuously peeled off from the substrate W to be processed from the outer peripheral portion toward the central portion. By heating in this way, the adhesive G between the processed wafer W and the supporting wafer S can be softened, and the supporting wafer S can be continuously peeled off from the processed wafer W from the outer peripheral portion toward the central portion. Therefore, the processed wafer w and the supporting wafer S can be easily peeled off with a small load. Therefore, the electronic circuit on the wafer W to be processed is not damaged, and the wafer W to be processed and the supporting wafer S can be appropriately peeled off. Moreover, it is also possible to shorten the time required for the peeling process as compared with the prior art.
S -24-201234443 Therefore, according to the present embodiment, the peeling process of the processed wafer W and the supporting wafer S can be appropriately and efficiently performed. Further, since the moving mechanism 150 has the first vertical moving portion 151 and the second vertical moving portion 152, the peeling process of the processed wafer W and the supporting wafer S can be performed stepwise. In other words, the first vertical moving portion 151 continuously peels the supporting wafer S from the processed wafer W from the outer peripheral portion toward the central portion, and then is completely peeled off by the second vertical moving portion 152. Wafer W and supporting wafer S. By performing the peeling treatment in stages, the processed wafer W and the supporting wafer S can be uniformly peeled off. Further, since the first vertical moving portion 151 moves the outer peripheral portion of the second holding portion 111 vertically downward, the processed wafer W and the supporting wafer S can be uniformly peeled off. When the peeling system 1 of the above embodiment is used, the superposed wafer T is peeled off into the processed wafer W and the supporting wafer S in the peeling device 30, and then washed in the first cleaning device 31. The processed wafer W is peeled off, and the peeled supporting wafer S is washed in the second cleaning device 33. In this way, by the present embodiment, the peeling from the processed wafer W and the supporting wafer S to the cleaning and supporting wafer of the processed wafer W can be efficiently performed in one stripping system 1. A series of peeling treatments until S is washed. Further, in the first cleaning device 31 and the second cleaning device 33, the cleaning of the processed wafer W and the cleaning of the supporting wafer S can be performed in parallel. Further, in the peeling device 30, during the process of peeling off the wafer W to be processed and the supporting wafer S, another processed crystal may be processed in the first cleaning device 3 1 and the second cleaning device 3 3 . Round W and branch-25- 201234443 wafer S. Therefore, the peeling of the processed wafer W and the supporting wafer S can be performed efficiently, and the processing amount of the peeling treatment can be improved. Moreover, in such a series of processes, since the stripping of the processed wafer W and the supporting wafer S can be performed after the processed wafer W is processed, the throughput of the wafer processing can be further improved. In the above-described embodiment, the peeling device 30 can hold the second holding portion 111 and the outer peripheral portion of the second holding portion 111 can be moved in the vertical direction. Various compositions. For example, as shown in Fig. 16, even if the first vertical driving portion 310 has the expandable body 311 and the support post 312, the cylinder 160 and the support post 161 of the first vertical drive portion 151 may be replaced. The expandable body 311 is constituted by a stretchable body made of, for example, stainless steel that is expandable and contractable in the vertical direction. The elastic body 311 holds the second holding portion 111 thereon, and the lower surface thereof is supported by the support plate 162. A fluid supply pipe 3 1 3 that supplies a fluid such as compressed air to the inside of the expandable body is connected to the expandable body 311. The fluid supply pipe 3 1 3 is connected to a fluid supply source (not shown). Then, by supplying the fluid from the fluid supply pipe 3 1 3 to the expandable body 3 1 1, the stretched body 31 is elongated. The support post 312 is disposed inside the expandable body 311. Further, the support post 312 supports the central portion of the second holding portion 111. Further, since the other configuration of the peeling device 30 is the same as that of the above-described embodiment of the peeling device 30, the description thereof will be omitted. As a result, as shown in Fig. 17, only the outer peripheral portion of the second holding portion 111 is vertically moved downward and downward by the first vertical moving portion 310.
S -26- 201234443 moving. In other words, when the outer peripheral portion of the second holding portion 111 moves vertically downward by the expandable body 311, the central portion of the second holding portion 111 is supported by the support post 312, and the central portion of the second holding portion 111 is vertically oriented. The position does not change. In this way, the support wafer s held by the second holding portion 111 is continuously peeled off from the outer peripheral portion toward the center portion from the processed wafer w held by the first holding portion 110. Therefore, according to the present embodiment, the peeling device 30 which can appropriately and uniformly peel the processed wafer w and the supporting wafer s ° + or more is provided as shown in FIG. The rotation mechanism 320 in which the holding portion 110 rotates may also be used. The rotating mechanism 320 is disposed between the first holding portion 110 and the support plate 130. Further, the rotation mechanism 306 has a motor (not shown) for rotating the first holding portion 11A. In this case, the first holding portion 110 and the second holding portion 1 1 1 are held in the above-described item A1. After the wafer T is superposed, the superposed wafer T is heated by the heating means 1 24, 141 to soften the adhesive G of the superposed wafer T, and the first holding portion 110 is rotated by the rotating mechanism 320. The rotation speed of the first holding portion 110 at this time is, for example, 1 mm/sec to 10 mm/sec. After that, the outer peripheral portion of the second holding portion 111 is moved vertically downward, and the support wafer S is continuously peeled off from the wafer W to be processed from the outer peripheral portion toward the center portion, and then the entire second holding portion 111 is vertically moved downward. The processed wafer W and the supporting wafer S are peeled off. Further, the method of peeling the wafer W to be processed and the supporting wafer S is the same as the method described in the above embodiment, and thus the description thereof is omitted.
In the present embodiment, the first holding portion 110 is rotated, so that the balance state between the processed wafer W and the supporting wafer S by the adhesive G can be collapsed. In this manner, the outer peripheral portion of the second holding portion 1 1 1 can be smoothly slid, and the outer peripheral portion of the support wafer S can be smoothly peeled off from the processed wafer W. Therefore, the stripping process of the processed wafer W and the supporting wafer S can be performed more efficiently. Further, in the above-described embodiment, the rotation mechanism 3 20 rotates the first holding portion 110, but a rotation mechanism for rotating the second holding portion 111 may be provided instead of the rotation mechanism 320. In the above-described embodiment, the first vertical moving portion 151 of the moving mechanism 150 moves the outer peripheral portion of the second holding portion 111 in the vertical direction in an annular shape, but the outer peripheral portion of the second holding portion 111 is not provided. The one end side may be moved in the vertical direction. Then, the support wafer S may be peeled off from the wafer W to be processed from one end portion of the outer peripheral portion toward the other end portion. At this time, since the processed wafer W and the supporting wafer S are continuously peeled off, the processed wafer W and the supporting wafer S can be appropriately and uniformly peeled off. Further, in the above embodiment, the processed wafer W and the supporting wafer S are peeled off while the wafer W to be processed is disposed on the upper side and the supporting wafer S is disposed on the lower side. Even if the wafer W to be processed and the support wafer S are disposed above and below, the arrangement may be reversed. At this time, the moving mechanism 150 may move the second holding portion 111 vertically upward. In the second conveying device 32 of the above embodiment, a plurality of supply ports (not shown) for supplying the cleaning liquid are formed on the surface of the white suction cup 230. At this time, the wafer W to be processed is received from the white hard suction cup 230.
S 201234443 When the porous chuck 1 90 of the first cleaning device 31 is supplied, the cleaning liquid can be supplied from the white working chuck 23 to the bonding surface Wj of the wafer W to be processed, and the bonding surface W can be washed. And it is also possible to wash the white body of the suction cup 230. As a result, the cleaning time of the wafer W to be processed in the subsequent first cleaning device 31 can be shortened, and the processing amount of the peeling treatment can be improved. Further, since the white suction cup 230 can be washed, the next processed wafer W can be appropriately transported. In the above embodiment, the third conveying device 41 has a white suction cup 230, but it may have a porous suction cup (not shown) to replace the white suction cup 230. Even in this case, the thinned wafer W to be processed can be appropriately adsorbed and held by the porous chuck. In the above embodiment, the second fluid nozzle is used as the cleaning liquid nozzle 203 of the first cleaning device 31 and the second cleaning device 33, but the type of the cleaning liquid nozzle 203 is not limited to this embodiment. Types can also be used with a variety of nozzles. For example, in the cleaning liquid 203, a nozzle body that integrates a nozzle for supplying a cleaning liquid and a nozzle for supplying an inert gas, a spray nozzle, an injection nozzle, an ultrasonic nozzle, or the like is used. Further, since the treatment amount of the washing treatment is increased, the supply liquid heated to, for example, 80 °C can be supplied. Further, in the first cleaning device 31 and the second cleaning device 33, a nozzle for supplying IPA (isopropyl alcohol) may be provided in addition to the cleaning liquid nozzle 203. At this time, after the processed wafer W or the supporting wafer S is washed by the cleaning liquid from the cleaning liquid nozzle 203, the cleaning liquid on the processed wafer W or the supporting wafer S is replaced with IPA. As a result, the processed wafer
-29- 201234443 W or the bonding surfaces Wj, S of the supporting wafer S; more reliably washed. In the peeling system 1 of the above embodiment, a temperature adjusting device (not shown) for cooling the processed wafer W heated by the peeling device 30 to a specific temperature may be provided. At this time, since the temperature of the wafer W to be processed is adjusted to an appropriate temperature, the subsequent processing can be performed more smoothly. Next, another embodiment will be described. Further, the description of the same portions as those of the above embodiment will be omitted. In this embodiment, instead of the above-described superposed wafer T, as shown in FIG. 9, a protective member for preventing breakage of the coincident wafer T, for example, a cutting frame 350, is mounted on the coincident wafer T. In the state, the same treatment is performed by the stripping system 1. Further, Fig. 19 is a longitudinal sectional view of the coincident wafer T attached to the dicing frame 350. Fig. 20 is a plan view of the cutting frame 350 and the coincident crystal circle T shown in Fig. 19 as viewed from below. The cutting frame 350 is an annular plate. As shown in Fig. 19, an adhesive tape 3 5 1 is attached to the upper surface of the cutting frame 350 with the adhesive surface facing downward. Then, the non-joining surface WN of the coincident wafer T is bonded to the adhesive surface. As a result, by carrying out the present invention in a state in which the cutting frame 350 is joined, it is possible to prevent the wafer W to be processed from being damaged in the peeling system 1. Further, in the present embodiment, the cutting frame 350 has an annular shape, but the outer peripheral portion of the cutting frame 350 may have various shapes such as a substantially rectangular shape. Further, in this case, the wafer wafer T and the dicing frame 350 are bonded to the cassette CT in advance, and the cassette CT is placed on the cassette mounting plate 11. Or 'If you connect an external device without a picture and this stripping system! After the overlap wafer T and the cutting frame 350 are joined by an external device, the system 1 can be processed at the strip S ... f -30 - 201234443. Alternatively, even in the peeling system 1, a processing portion for joining the wafer τ and the cutting frame 350 may be provided. Then, when the treatment is performed in the peeling process 30, the support wafer S is peeled off, and the processed wafer W and the dicing frame 350 are joined. Then, it is preferable to carry out the treatment so as to join the processed wafer W and the dicing frame 350 as it is until the processing of the stripping system 1 is completed. Then, it is accommodated to the cassette Cw as it is to join the processed wafer W and the dicing frame 350. In this way, damage to the wafer W to be processed can be prevented. Then, when the processing is completed from the peeling system 1, the separation of the processed wafer W and the dicing frame 350 may be performed in an external device (not shown). Furthermore, in the above embodiment, the case where the processed wafer W is post-processed and productized in the post-processing station 4 is described, but the present invention can also be applied to, for example, a supporting wafer. Stripping of the wafer to be processed, for example, used in the ternary integrated technology. Further, the ternary integrated body technology is a three-dimensional lamination of the plurality of semiconductor devices in place of the high-integration semiconductor device in the horizontal plane in response to the demand for high integration of semiconductor devices in recent years. The technology of the device. Even in the three-dimensional integrated technology, the processed wafer to be laminated is required to be thinned, and the processed wafer is bonded to the supporting wafer to perform a specific process. Better than cooked. I want to be the example of the correctness of the repair and the release of this book and this book, for the change of the needle and other face limits, the 1 is unfavorable and special, the picture shows the case is attached to the original is attached Or, as a matter of fact, when it is more common, it is also within the technical scope of the present invention to say that the human beings are all in the same way. The present invention is not limited to this example, and various aspects can be employed. The present invention is also applicable to a case where the substrate is an FPD (flat display) other than a wafer, or another substrate such as a grating for a photomask. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a plan view showing a configuration of a peeling system according to the present embodiment. Figure 2 is a side view of the wafer being processed and the supporting wafer. Fig. 3 is a schematic longitudinal sectional view showing the configuration of the peeling device. Fig. 4 is a plan view of the first vertical moving portion. Fig. 5 is a schematic longitudinal sectional view showing the configuration of the first cleaning device. Fig. 6 is a schematic cross-sectional view showing the configuration of the first cleaning device. Fig. 7 is a schematic longitudinal sectional view showing the configuration of the second cleaning device. Fig. 8 is a side elevational view showing the configuration of the second conveying device. Fig. 9 is a flow chart showing the main construction of the peeling process. Fig. 10 is an explanatory view showing a state in which the wafer is superposed on each other by the first holding portion and the second holding portion. The figure is an explanatory view showing a state in which the outer peripheral portion of the second holding portion is moved vertically downward by the first vertical moving portion. Fig. 12 is an explanatory view showing a state in which the second holding portion is moved vertically downward by the second vertical moving portion. -32- 201234443 Figure 1 3 is an explanatory view showing how the wafer to be processed and the supporting wafer are peeled off. Fig. 14 is an explanatory view showing a state in which the wafer to be processed is transferred from the first holding portion to the white suction cup. Fig. 15 is an explanatory view showing a state in which a wafer to be processed is transferred from a white suction cup to a porous chuck. Fig. 16 is a schematic longitudinal sectional view showing the configuration of a peeling device according to another embodiment. Fig. 17 is an explanatory view showing a state in which the outer peripheral portion of the second holding portion is moved vertically downward by the first vertical moving portion according to another embodiment. Fig. 18 is a schematic longitudinal sectional view showing the configuration of a peeling device according to another embodiment. Figure 19 is a longitudinal cross-sectional view of a coincident wafer mounted on a cutting frame. Figure 20 is a top plan view of a coincident wafer (support wafer) mounted on a cutting frame. [Description of main component symbols] 1 : Peeling system 2 : Loading and unloading station 3 : Peeling processing table 4 : Post-processing station 5 : Interface table 6 : Wafer transfer area 201234443 20 : First transfer device 3 0 : Peeling device 3 1 : First cleaning device 32: second conveying device 3 3 : second cleaning device 41 : third conveying device 1 10 : first holding portion 1 1 1 : second holding portion 124 : heating mechanism 1 4 1 : heating mechanism 150: moving mechanism 1 5 1 : first vertical moving portion 152 : second vertical moving portion 1 5 3 : horizontal moving portion 160 : cylinder 1 6 1 : support column 1 62 : support plate 1 7 0 · drive portion 1 7 1 : support member 3 00 : control unit 310 : first vertical moving portion 3 1 1 : expandable body 3 1 2 : support column 3 1 3 : fluid supply pipe - 34-
S 201234443 3 2 0 : Rotating mechanism G : Adhesive S : Support wafer Τ : Coincident wafer W : Processed wafer

Claims (1)

  1. 201234443 VII. Patent Application Area 1. A peeling device for peeling a superposed substrate on which a substrate to be processed and a support substrate are bonded by an adhesive into a substrate to be processed and a support substrate, the peeling device having a first holding portion, a heating mechanism that heats the substrate to be processed and holds the substrate to be processed, a second holding portion that includes a heating mechanism that heats the substrate, and holds the support substrate, and a moving mechanism that is subjected to the second The support substrate held by the holding portion is moved from the outer peripheral portion toward the center portion so as to be continuously peeled off from the substrate to be processed held by the first holding portion, and the outer peripheral portion of the second holding portion is held to move in the vertical direction. The peeling device according to the first aspect of the invention, wherein the moving mechanism is configured to move the outer peripheral portion of the second holding portion in a circular direction in a circular direction and to support the support substrate held by the second holding portion The substrate to be processed which is held by the first holding portion is peeled off from the outer peripheral portion toward the center portion. The peeling device according to the first or second aspect of the invention, wherein the first holding portion is disposed above the second holding portion, and the moving mechanism moves the second holding portion vertically downward. 4. The peeling device according to claim 3, further comprising a rotating mechanism for rotating the first holding portion. The apparatus for removing the S-36 - 201234443 according to any one of the preceding claims, wherein the moving mechanism has: a first moving portion for holding the second holding portion, Further, only the outer peripheral portion of the second holding portion is moved in the vertical direction, and the second moving portion is configured to hold the first moving portion and move the first moving portion and the second holding portion in the vertical direction. . 6. The peeling device according to claim 5, wherein the first moving portion has: a plurality of cylinders for moving the outer peripheral portion of the second holding portion in a vertical direction; and a support column When the outer peripheral portion of the second holding portion is moved in the vertical direction by the plurality of cylinders, the second holding portion is supported so that the position in the vertical direction of the central portion of the second holding portion does not change. Central Department. 7. The peeling device according to claim 5, wherein the first moving portion has: a stretchable body for holding the second holding portion and being expandable and contractible in a vertical direction; and a support column; When the expansion/contraction body is contracted inside and the outer peripheral portion of the second holding portion is moved in the vertical direction, the second support portion supports the second portion so that the position in the vertical direction of the central portion of the second holding portion does not change. The central part of the holding unit. A peeling system according to any one of claims 1 to 7, wherein the peeling system is characterized by having: -37-201234443 peeling treatment station having the above peeling device and washing The first cleaning device that cleans the substrate to be processed with the peeling device removed, and the second cleaning device that cleans the support substrate that has been peeled off by the peeling device; and the loading/unloading station' The substrate, the support substrate, or the superposed substrate are processed; and the transfer device is disposed between the peeling process table and the loading/unloading stage, and transports the substrate to be processed, the support substrate, or the superposed substrate. 9. The peeling system according to claim 8, wherein the peeling processing station and the processing substrate after the processing of the substrate to be processed which is peeled off by the peeling processing table are performed, and the processing substrate is transported between the processing stations. Interface table. In the peeling method, the superposed substrate on which the substrate to be processed and the support substrate are bonded by an adhesive is peeled off into a substrate to be processed and a support substrate, and the peeling method is characterized in that: the peeling device has: a holding unit that includes a heating mechanism that heats the substrate to be processed and holds the substrate to be processed, and a second holding unit that includes a heating mechanism that heats the supporting substrate and holds the supporting substrate, and a moving mechanism that is The support substrate held by the second holding portion is moved from the outer peripheral portion toward the center portion, and the outer peripheral portion of the second holding portion is moved in the vertical direction so as to be continuously peeled off from the substrate to be processed held by the first holding portion. The above-mentioned peeling method includes: S-38 - 201234443. The first project is to heat the substrate to be processed held in the first holding portion and the support substrate held on the second holding portion to make the second holding The outer peripheral portion of the portion moves in the vertical direction, and the support substrate is continuously continuous from the substrate to be processed from the outer peripheral portion toward the central portion. In peeling, and the second engineering, after which the second holding portions based all move in a vertical direction, release the substrate and the support substrate to be processed. The peeling method according to the first aspect of the invention, wherein the outer peripheral portion of the second holding portion is moved in a circular direction in a circular direction from the outer peripheral portion toward the central portion. The support substrate is continuously peeled off from the substrate to be processed. The peeling method according to the first aspect of the invention, wherein the first holding portion is disposed above the second holding portion, and in the first project and the second project, The second holding portion moves vertically downward. The peeling method according to the second aspect of the invention, wherein the peeling device has a rotating mechanism that rotates the first holding portion, and after the rotation of the second holding portion is started in the first project, The outer peripheral portion of the second holding portion is moved in the vertical direction, and the support substrate is continuously peeled off from the substrate to be processed from the outer peripheral portion toward the central portion. A program characterized in that: in order to carry out the peeling method as described in any one of the claims 1 to 13 in -39 - 201234443 by means of a peeling device, on a computer for controlling the control unit of the peeling device Take action. A computer readable memory medium characterized by: storing a program as recited in claim 14 of the patent application. S -40-
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