JP2013503099A - 炭化ケイ素粉体製造方法及びシステム - Google Patents
炭化ケイ素粉体製造方法及びシステム Download PDFInfo
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Abstract
【解決手段】本発明の炭化ケイ素粉体製造方法は、混合器でケイ素源と炭素源とから構成された混合物を生成するステップ、及び前記混合物を真空度0.03torr以上0.5torr以下、温度1300℃以上1900℃以下に加熱して炭化ケイ素(SiC)粉体を合成するステップを含む。
【選択図】図1
Description
SiO+C→Si+CO
Si+C→SiC
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SiO+2C→SiC+CO
Claims (13)
- (a)混合器でケイ素源と炭素源から構成された混合物を生成するステップと、
(b)前記混合物を真空度0.03torr以上0.5torr以下、温度1300℃以上1900℃以下に加熱して炭化ケイ素粉体を合成するステップと、
を含むことを特徴とする、炭化ケイ素粉体製造方法。 - 前記(a)ステップのケイ素源と前記炭素源の質量比は1:1以上4:1以下であることを特徴とする、請求項1に記載の炭化ケイ素粉体製造方法。
- 前記(a)ステップのケイ素源は乾式シリカ、シリカゾル、シリカゲル、微細シリカ、及び石英粉末のうち、1つ以上が選択され、
前記炭素源はカーボンブラック、カーボンナノチューブ、プラレン、フェノール樹脂、フラン樹脂、キシレン樹脂、ポリイミド、ポリウレタン、ポリアクリロニトリル、ポリビニールアルコール、ポリ酢酸ビニールを含むモノマー、プレポリマー、セルロース、製糖、ピッチ、及びタールのうち、1つ以上が選択されることを特徴とする、請求項2に記載の炭化ケイ素粉体製造方法。 - 前記(a)ステップと前記(b)ステップとの間に、前記混合物を加熱して前記混合物に含まれた炭素源を炭化させるステップをさらに含むことを特徴とする、請求項1に記載の炭化ケイ素粉体製造方法。
- 前記炭化させるステップは、温度700℃以上1200℃以下で炭化させることを特徴とする、請求項4に記載の炭化ケイ素粉体製造方法。
- (a)混合器でSiO粉末と炭素源とを混合して炭化ケイ素混合物を生成するステップと、
(b)合成炉で前記混合物を1300℃以上1400℃以下の温度で30分以上7時間以下の間加熱して炭化ケイ素粉体を獲得するステップと、
を含むことを特徴とする、炭化ケイ素粉体製造方法。 - 前記(a)ステップの炭素源はカーボンブラックであることを特徴とする、請求項6に記載の炭化ケイ素粉体製造方法。
- 前記(a)ステップで、
炭素(C)対ケイ素(Si)の混合比は、1.3以上1.8以下であることを特徴とする、請求項7に記載の炭化ケイ素粉体製造方法。 - 前記高効率炭化ケイ素粉体製造方法は、
前記(a)ステップと(b)ステップとの間に、
(1)シーブを用いて前記ボールミル用ボールを濾過し、炭化ケイ素混合物を回収するステップと、
(2)前記回収された混合物を黒鉛坩堝で計量するステップとをさらに含み、かつ、
前記(a)ステップは、
混合器としてボールミルを使用し、SiO、炭素源、及びボールミル用ボールを混合して炭化ケイ素混合物を生成するステップであることを特徴とする、請求項1に記載の炭化ケイ素粉体製造方法。 - 前記(b)ステップの加熱炉の材料は黒鉛であり、内部空間に真空または不活性ガスを充填したことを特徴とする、請求項9に記載の炭化ケイ素粉体製造方法。
- ケイ素源と炭素源とから構成された混合物を生成する混合器と、
前記混合物を真空度0.03torr以上0.5torr以下、温度1300℃以上1900℃以下に加熱して炭化ケイ素を合成する密閉された坩堝を含むことを特徴とする、炭化ケイ素粉体製造システム。 - 前記ケイ素源と前記炭素源との質量比は1:1以上4:1以下であることを特徴とする、請求項11に記載の炭化ケイ素粉体製造システム。
- 前記ケイ素源は乾式シリカ、シリカゾル、シリカゲル、微細シリカ、及び石英粉末のうちの1つ以上が選択され、前記炭素源はカーボンブラック、カーボンナノチューブ、プラレン、フェノール樹脂、フラン樹脂、キシレン樹脂、ポリイミド、ポリウレタン、ポリアクリロニトリル、ポリビニールアルコール、ポリ酢酸ビニールを含むモノマー、プレポリマー、セルロース、製糖、ピッチ、及びタールのうち、1つ以上が選択されることを特徴とする、請求項11に記載の炭化ケイ素粉体製造システム。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2009-0079379 | 2009-08-26 | ||
KR1020090079379A KR101637567B1 (ko) | 2009-08-26 | 2009-08-26 | 고순도 탄화규소 분체 제조 방법 및 시스템 |
KR1020090080014A KR101587262B1 (ko) | 2009-08-27 | 2009-08-27 | 고효율 탄화규소 분체 제조 방법 |
KR10-2009-0080014 | 2009-08-27 | ||
PCT/KR2010/005753 WO2011025285A2 (en) | 2009-08-26 | 2010-08-26 | System and method for manufacturing silicon carbide pulverulent body |
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KR20130014969A (ko) * | 2011-08-01 | 2013-02-12 | 엘지이노텍 주식회사 | 실리콘 카바이드의 제조방법 |
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US10138127B2 (en) | 2011-12-21 | 2018-11-27 | Lg Innotek Co., Ltd. | Method of fabricating silicon carbide powder |
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KR101349502B1 (ko) * | 2011-12-28 | 2014-01-08 | 엘지이노텍 주식회사 | 탄화규소 분말 제조 방법 |
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WO2011025285A3 (en) | 2011-07-14 |
EP2470473B1 (en) | 2017-12-20 |
JP5525050B2 (ja) | 2014-06-18 |
EP2470473A2 (en) | 2012-07-04 |
WO2011025285A2 (en) | 2011-03-03 |
CN102596802A (zh) | 2012-07-18 |
US20120201735A1 (en) | 2012-08-09 |
EP2470473A4 (en) | 2014-10-08 |
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