JP2012160719A - 半導体装置の作製方法 - Google Patents
半導体装置の作製方法 Download PDFInfo
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- JP2012160719A JP2012160719A JP2012001777A JP2012001777A JP2012160719A JP 2012160719 A JP2012160719 A JP 2012160719A JP 2012001777 A JP2012001777 A JP 2012001777A JP 2012001777 A JP2012001777 A JP 2012001777A JP 2012160719 A JP2012160719 A JP 2012160719A
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- oxide semiconductor
- film
- transistor
- semiconductor film
- electrode
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- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- QOSATHPSBFQAML-UHFFFAOYSA-N hydrogen peroxide;hydrate Chemical compound O.OO QOSATHPSBFQAML-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000002605 large molecules Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229920002521 macromolecule Polymers 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920006267 polyester film Polymers 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- 238000004698 pseudo-potential method Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000005001 rutherford backscattering spectroscopy Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000005049 silicon tetrachloride Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 1
- 229960000909 sulfur hexafluoride Drugs 0.000 description 1
- 230000001502 supplementing effect Effects 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
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-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
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- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
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- H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
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- H01L29/41725—Source or drain electrodes for field effect devices
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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Abstract
【解決手段】基板上にゲート電極を形成し、ゲート電極上にゲート絶縁膜を形成し、酸化物半導体膜を形成し、第1の酸化物半導体膜を形成した後、加熱処理をして第2の酸化物半導体膜を形成し、第1の導電膜を形成し、厚さの異なる領域を有する第1のレジストマスクを形成し、第1のレジストマスクを用いて第2の酸化物半導体膜および第1の導電膜をエッチングして第3の酸化物半導体膜および第2の導電膜を形成し、第1のレジストマスクを縮小させて、第2のレジストマスクを形成し、第2のレジストマスクを用いて第2の導電膜の一部を選択的に除去することでソース電極およびドレイン電極を形成する半導体装置の作製方法である。
【選択図】図1
Description
本実施の形態では、本発明の一態様であるトランジスタおよび該トランジスタの作製方法について図1乃至図7を用いて説明する。
本実施の形態では、実施の形態1のトランジスタ100、トランジスタ200、およびトランジスタ310における酸化物半導体膜105が、結晶領域を有する酸化物半導体膜である形態について説明する。該形態は、実施の形態1で説明した作製工程と一部異なる作製工程により作製することができる。なお、実施の形態1と同一の箇所には同じ符号を用い、同じ符号の詳細な説明はここでは省略する。
本実施の形態では、実施の形態1および実施の形態2で説明した作製方法で形成されるトランジスタに含まれる酸化物半導体膜の表面及び側面における酸素の欠損しやすさについて、以下のモデルを用いて計算を行い検証した結果について説明する。なお、実施の形態2で説明したCAAC酸化物半導体は、一側面に複数の結晶面を有することから、計算の一モデルとして用いると当該計算が複雑になる。そのため、本実施の形態では、c軸に配向したウルツ鉱構造であるZnO単結晶を用いて行った計算結果を示す。結晶のモデルとしては、図25に示すように、c軸に平行な面と垂直な面でそれぞれ結晶構造を切断し、(001)表面、(100)表面、及び(110)表面を作製している。
図9(A)に半導体装置を構成する記憶素子(以下、メモリセルとも記す。)の回路図の一例を示す。メモリセルは、酸化物半導体以外の材料(例えば、シリコン、ゲルマニウム、炭化シリコン、ガリウムヒ素、窒化ガリウム、有機化合物など)をチャネル形成領域に用いたトランジスタ1160と酸化物半導体をチャネル形成領域に用いたトランジスタ1162によって構成される。
本実施の形態では、容量素子を有するメモリセルの回路図の一例を示す。図11(A)に示すメモリセル1170は、第1の配線SL、第2の配線BL、第3の配線S1、第4の配線S2と、第5の配線WLと、トランジスタ1171(第1のトランジスタ)と、トランジスタ1172(第2のトランジスタ)と、容量素子1173と、から構成されている。トランジスタ1171は、酸化物半導体以外の材料をチャネル形成領域に用いており、トランジスタ1172はチャネル形成領域に酸化物半導体を用いている。
本実施の形態では、実施の形態1または実施の形態2に示す作製方法で作製されたトランジスタを用いた半導体装置の例について、図12を参照して説明する。
酸化物半導体をチャネル形成領域に用いたトランジスタを少なくとも一部に用いてCPU(Central Processing Unit)を構成することができる。
本実施の形態では、実施の形態1および実施の形態2の作製工程により作製されたトランジスタを、画素部、さらには駆動回路に用いて表示機能を有する半導体装置(表示装置ともいう。)を作製することができる。また、該トランジスタを用いた駆動回路の一部または全体を、画素部と同じ基板上に一体形成し、システムオンパネルを形成することができる。
本実施の形態では、本発明の一態様の作製方法で作製されるトランジスタを用いた保護回路について、図23を用いて説明する。
実施の形態8で説明した表示装置は、さまざまな電子機器に適用することができる。電子機器としては、例えば、テレビジョン装置(テレビ、またはテレビジョン受信機ともいう)などが挙げられる。さらには、屋内でのデジタルサイネージ(Digital Signage:電子看板)、PID(Public Information Display)、電車などの乗り物の車内広告、等に適用することができる。特に、本発明の一態様である表示装置は、消費電力が低減されているため、長時間画像を表示させる上記電子機器として用いることは有用である。そこで、本発明の一態様である表示装置を用いた電子機器の一例を、図24に示す。
101 基板
102 下地絶縁膜
103 ゲート電極
104 ゲート絶縁膜
105 酸化物半導体膜
106a ソース電極
106b ドレイン電極
107 保護絶縁膜
108 チャネル保護膜
110a 低抵抗膜
110b 低抵抗膜
115 第1の酸化物半導体膜
117 第2の酸化物半導体膜
118 導電膜
119 レジストマスク
120 第3の酸化物半導体膜
121 導電膜
122a レジストマスク
122b レジストマスク
200 トランジスタ
300 基板
301a 半透過層
301b 遮光層
301c 遮光層
310 トランジスタ
400 基板
401 遮光部
402 回折格子部
403 グレートーンマスク
411 基板
412 半透光部
413 遮光部
414 ハーフトーンマスク
911a ゲート電極
911b ゲート電極
913 半導体膜
915a 第1の電極
925a コンタクトホール
925b コンタクトホール
926a コンタクトホール
926b コンタクトホール
930a 電極
930b 電極
945 第1の配線
960 第2の配線
970a トランジスタ
970b トランジスタ
997 保護回路
1000 テレビジョン装置
1001 筐体
1002 表示部
1004 筐体
1003 スピーカ
1005 操作キー
1006 接続端子
1007 センサ
1009 操作キー
1010 リモコン操作機
1011 表示部
1100 メモリセル
1111 駆動回路
1112 回路
1113 駆動回路
1120 メモリセルアレイ
1130 メモリセル
1131 トランジスタ
1132 容量素子
1140 メモリセルアレイ
1141 スイッチング素子
1142 記憶素子
1143 記憶素子群
1150 メモリセル
1151 トランジスタ
1152 トランジスタ
1153 トランジスタ
1154 トランジスタ
1155 トランジスタ
1156 トランジスタ
1160 トランジスタ
1161 トランジスタ
1162 トランジスタ
1163 トランジスタ
1164 トランジスタ
1170 メモリセル
1171 トランジスタ
1172 トランジスタ
1173 容量素子
1180 メモリセル
1181 トランジスタ
1182 トランジスタ
1183 容量素子
1189 ROMインターフェース
1190 基板
1191 ALU
1192 ALUコントローラ
1193 インストラクションデコーダ
1194 インタラプトコントローラ
1195 タイミングコントローラ
1196 レジスタ
1197 レジスタコントローラ
1198 バスインターフェース
1199 ROM
2000 デジタルサイネージ
2002 筐体
2004 筐体
2006 表示部
2008 スピーカ
2010 スピーカ
4000 液晶表示装置
4001 第1の基板
4002 画素部
4003 信号線駆動回路
4004 走査線駆動回路
4005 シール材
4006 第2の基板
4008 液晶層
4010 トランジスタ
4011 トランジスタ
4015 接続端子電極
4016 端子電極
4018 FPC
4019 異方性導電膜
4021 絶縁膜
4120 容量素子
4121 容量電極
4030 画素電極
4030a 画素電極
4030b 画素電極
4030c 画素電極
4031 対向電極
4033 絶縁膜
4032 絶縁膜
4035 ギャップ保持部材
4100 バックライト
4103 第1の偏光板
4104 第2の偏光板
4110 液晶素子
4150 電極
4150a 電極
4150b 電極
4150c 電極
4151a 電極
4151b 電極
4151c 電極
4151 電極
4152 絶縁膜
4158 突起物
4159 突起物
4200 画素
Claims (11)
- 基板上にゲート電極を形成し、
前記ゲート電極上にゲート絶縁膜を形成し、
前記ゲート絶縁膜上に第1の酸化物半導体膜を形成し、
前記第1の酸化物半導体膜を形成した後、加熱処理をして第2の酸化物半導体膜を形成し、
前記第2の酸化物半導体膜上に第1の導電膜を形成し、
前記第1の導電膜上に厚さの異なる領域を有する第1のレジストマスクを形成し、
前記第1のレジストマスクを用いて前記第2の酸化物半導体膜および前記第1の導電膜の一部を選択的に除去することで第3の酸化物半導体膜および第2の導電膜を形成し、
前記第1のレジストマスクを縮小させることで、少なくとも前記第2の導電膜の前記第3の酸化物半導体膜のチャネル形成領域と重畳する領域を露出させつつ、第2のレジストマスクを形成し、
前記第2のレジストマスクを用いて前記第2の導電膜の一部を選択的に除去することでソース電極およびドレイン電極を形成することを特徴とする半導体装置の作製方法。 - 基板上にゲート電極を形成し、
前記ゲート電極上にゲート絶縁膜を形成し、
前記ゲート絶縁膜上に第1の酸化物半導体膜を形成し、
前記第1の酸化物半導体膜上に第1の導電膜を形成し、
前記第1の導電膜を形成した後、加熱処理をして第2の酸化物半導体膜を形成し、
前記加熱処理をした前記第1の導電膜上に厚さの異なる領域を有する第1のレジストマスクを形成し、
前記第1のレジストマスクを用いて前記第2の前記酸化物半導体膜および前記加熱処理をした前記第1の導電膜の一部を選択的に除去することで第3の酸化物半導体膜および第2の導電膜を形成し、
前記第1のレジストマスクを縮小させることで、少なくとも前記第2の導電膜の前記第3の酸化物半導体膜のチャネル形成領域と重畳する領域を露出させつつ、第2のレジストマスクを形成し、
前記第2のレジストマスクを用いて前記第2の導電膜の一部を選択的に除去することでソース電極およびドレイン電極を形成することを特徴とする半導体装置の作製方法。 - 請求項1または請求項2において、
前記ソース電極および前記ドレイン電極を形成した後、前記ゲート絶縁膜、前記第3の酸化物半導体膜、前記ソース電極および前記ドレイン電極上に保護絶縁膜を形成し、
前記保護絶縁膜を形成した後、さらなる加熱処理をすることを特徴とする半導体装置の作製方法。 - 請求項3において、
前記ゲート絶縁膜および前記保護絶縁膜の少なくとも一方は、酸化物絶縁膜であることを特徴とする半導体装置の作製方法。 - 請求項3において、
前記ゲート絶縁膜および前記保護絶縁膜の少なくとも一方は、昇温脱離ガス分光法分析にて、酸素原子に換算しての酸素の脱離量が1.0×1018atoms/cm3以上である絶縁膜であることを特徴とする半導体装置の作製方法。 - 請求項3において、
前記ゲート絶縁膜および前記保護絶縁膜の少なくとも一方は、化学量論比より過剰な酸素を含む酸化物絶縁膜であることを特徴とする半導体装置の作製方法。 - 請求項1乃至請求項6のいずれか一において、
前記加熱処理は、前記第1の酸化物半導体膜から水素を脱離させると共に、前記ゲート絶縁膜に含まれる酸素を前記第1の酸化物半導体膜に拡散させる温度で加熱することを特徴とする半導体装置の作製方法。 - 請求項1乃至請求項7のいずれか一において、
前記第2の酸化物半導体膜および前記第3の酸化物半導体膜の水素濃度は、5×1018atoms/cm3未満であることを特徴とする半導体装置の作製方法。 - 請求項1乃至請求項8のいずれか一において、
前記第1の酸化物半導体膜、前記第2の酸化物半導体膜および前記第3の酸化物半導体膜は、In、Ga、SnおよびZnから選ばれた二以上の元素を含むことを特徴とする半導体装置の作製方法。 - 請求項1乃至請求項9のいずれか一において、
前記第1の酸化物半導体膜、前記第2の酸化物半導体膜および前記第3の酸化物半導体膜は、非単結晶であり、且つc軸配向の結晶領域を有する酸化物半導体膜であることを特徴とする半導体装置の作製方法。 - 請求項1乃至請求項10のいずれか一において、
前記第1のレジストマスクは、多階調マスクを用いて形成することを特徴とする半導体装置の作製方法。
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JP2013191648A (ja) * | 2012-03-13 | 2013-09-26 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
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JP2015043064A (ja) * | 2013-02-25 | 2015-03-05 | 株式会社半導体エネルギー研究所 | 表示装置及び電子機器 |
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JP2018151649A (ja) * | 2013-02-25 | 2018-09-27 | 株式会社半導体エネルギー研究所 | 表示装置 |
WO2015053010A1 (ja) * | 2013-10-11 | 2015-04-16 | シャープ株式会社 | 半導体装置 |
US9754978B2 (en) | 2013-10-11 | 2017-09-05 | Sharp Kabushiki Kaisha | Semiconductor device with U-shaped active portion |
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Also Published As
Publication number | Publication date |
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CN107256868A (zh) | 2017-10-17 |
JP2018078316A (ja) | 2018-05-17 |
US20120175610A1 (en) | 2012-07-12 |
JP6268236B2 (ja) | 2018-01-24 |
CN102593186A (zh) | 2012-07-18 |
KR102090894B1 (ko) | 2020-03-18 |
US20140080253A1 (en) | 2014-03-20 |
KR20120090784A (ko) | 2012-08-17 |
KR20140061341A (ko) | 2014-05-21 |
JP5977524B2 (ja) | 2016-08-24 |
CN102593186B (zh) | 2017-05-10 |
TW201234483A (en) | 2012-08-16 |
KR101944566B1 (ko) | 2019-01-31 |
US8536571B2 (en) | 2013-09-17 |
TWI532099B (zh) | 2016-05-01 |
KR101460850B1 (ko) | 2014-11-11 |
JP2022118031A (ja) | 2022-08-12 |
JP6678637B2 (ja) | 2020-04-08 |
JP2020113780A (ja) | 2020-07-27 |
JP2016208048A (ja) | 2016-12-08 |
US9166026B2 (en) | 2015-10-20 |
KR20190009818A (ko) | 2019-01-29 |
CN107275410A (zh) | 2017-10-20 |
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