WO2015072196A1 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- WO2015072196A1 WO2015072196A1 PCT/JP2014/071476 JP2014071476W WO2015072196A1 WO 2015072196 A1 WO2015072196 A1 WO 2015072196A1 JP 2014071476 W JP2014071476 W JP 2014071476W WO 2015072196 A1 WO2015072196 A1 WO 2015072196A1
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Images
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Definitions
- the present invention relates to a semiconductor device including a memory transistor.
- memory transistor an element having a transistor structure (hereinafter referred to as “memory transistor”) as a memory element that can be used as a ROM (read only memory).
- Patent Document 1 discloses a nonvolatile memory transistor having a MOS transistor structure. In this memory transistor, writing is performed by applying a high electric field to the gate insulating film to cause dielectric breakdown.
- Patent Document 2 discloses a memory transistor using a change in threshold voltage caused by applying a predetermined write voltage to the gate.
- Patent Document 3 by the present applicant proposes a novel nonvolatile memory transistor capable of reducing power consumption as compared with the prior art.
- This memory transistor uses a metal oxide semiconductor in an active layer (channel), and can irreversibly change to a resistor state showing ohmic resistance characteristics regardless of the gate voltage due to Joule heat generated by a drain current.
- the voltage for writing can be made lower than the voltage in Patent Documents 1 and 2. Note that in this specification, an operation for changing the oxide semiconductor of the memory transistor to a resistor state is referred to as “writing”.
- this memory transistor does not operate as a transistor because a metal oxide semiconductor becomes a resistor after writing, but in this specification, it is also referred to as a “memory transistor” even after being changed to a resistor.
- names of a gate electrode, a source electrode, a drain electrode, an active layer, a channel region, and the like constituting a transistor structure are used.
- Patent Document 3 describes that a memory transistor is formed on, for example, an active matrix substrate of a liquid crystal display device.
- the present inventor has examined the configuration of a memory transistor having an active layer containing a metal oxide from various angles. As a result, it has been found that if the writing time of the memory transistor is further reduced, the conventional electrode structure may not be able to obtain high reliability. This problem will be described in detail later.
- Embodiments of the present invention are aimed at improving the reliability of a semiconductor device including a memory transistor as compared with the related art.
- a semiconductor device includes a substrate and at least one memory transistor supported by the substrate, and the at least one memory transistor has a drain current Ids of a gate voltage Vg.
- Is a memory transistor in which the drain current Ids can be changed irreversibly from a semiconductor state dependent on the gate voltage Vg, the at least one memory transistor comprising: a gate electrode; a metal oxide layer; A gate insulating film disposed between the gate electrode and the metal oxide layer, and a source electrode and a drain electrode electrically connected to the metal oxide layer, the drain electrode having a melting point
- a first drain metal layer formed of a first metal having a melting point of 1200 ° C.
- the source electrode has a stacked structure including a first source metal layer including the first metal and a second source metal layer including the second metal, and is formed on the surface of the substrate.
- a part of the source electrode overlaps both the metal oxide layer and the gate electrode, and the part of the source electrode includes the first source metal layer and the second source electrode. Contains a source metal layer.
- the source electrode has a stacked structure including a first source metal layer including the first metal and a second source metal layer including the second metal, and is formed on the surface of the substrate.
- a portion of the source electrode overlaps both the metal oxide layer and the gate electrode, the portion of the source electrode includes the first source metal layer, and The second source metal layer is not included.
- the first drain metal layer is in direct contact with the upper surface of the metal oxide layer.
- the first drain metal layer is in direct contact with the lower surface of the metal oxide layer.
- the gate electrode is located on the substrate side of the metal oxide layer.
- the first drain metal layer and the second drain metal layer are stacked in this order from the substrate side.
- the metal oxide layer when viewed from the normal direction of the substrate, overlaps with the gate electrode and the gate insulating film, and between the source electrode and the drain electrode.
- the located part has a U-shape.
- the first metal is a metal selected from the group consisting of W, Ta, Ti, Mo, and Cr or an alloy thereof.
- the melting point of the second metal is less than 1200 ° C.
- the second metal is a metal selected from the group consisting of Al and Cu.
- the metal oxide layer contains In, Ga, and Zn.
- the metal oxide layer includes a crystalline portion.
- the at least one memory transistor is a plurality of memory transistors including the memory transistor ST in the semiconductor state and the memory transistor RT in the resistor state.
- the semiconductor device further comprises another transistor having a semiconductor layer including a metal oxide supported by the substrate, and the semiconductor layer of the other transistor and the metal oxide layer of the memory transistor include:
- the source electrode and the drain electrode of the other transistor are formed of a common oxide semiconductor film, and include a first metal layer including the first metal and a second metal layer including the second metal.
- a part of the drain electrode of the other transistor overlaps with both the gate electrode of the other transistor and the metal oxide layer.
- the part of the drain electrode of the other transistor includes the first metal layer and the second metal layer.
- the semiconductor device is an active matrix substrate, and includes a display region having a plurality of pixel electrodes and pixel transistors each of which is electrically connected to a corresponding pixel electrode among the plurality of pixel electrodes. And a peripheral region having a plurality of circuits arranged in a region other than the display region, the plurality of circuits including a memory circuit having the at least one memory transistor, the pixel transistor, and the peripheral At least one of the plurality of transistors included in the plurality of circuits in the region includes a semiconductor layer formed using an oxide semiconductor film that is common to the metal oxide layer of the at least one memory transistor.
- a semiconductor device having a metal oxide layer as an active layer and having a memory transistor using a change from a semiconductor state to a resistor state
- a change from a semiconductor state to a resistor state when writing to the memory transistor It is possible to prevent the drain electrode from being melted by the heat generated in. Therefore, damage and destruction of the memory transistor due to heat generated during writing can be suppressed, so that the reliability of the semiconductor device can be improved.
- FIG. 3 is a diagram illustrating a single memory cell constituting the memory circuit in the first embodiment.
- FIGS. 7A and 7B are a cross-sectional view and a plan view, respectively, of the memory transistor 10 (1) of the embodiment, and FIG. 10C is a top view of the memory transistor 10 (1) after writing.
- FIGS. 7A and 7B are a cross-sectional view and a plan view of the memory transistor 10 (2) of the reference example, respectively, and FIG. 10C is a top view of the memory transistor 10 (2) after writing.
- FIG. 11 is a cross-sectional view illustrating a display device 2001 used.
- 2 is a diagram illustrating a block configuration of a liquid crystal display device 2001.
- FIG. (A) and (b) are schematic diagrams showing the configuration of the memory cells constituting the nonvolatile memory devices 60a to 60c and the pixel circuit of the liquid crystal display device 2001, respectively.
- 4A and 4B are process diagrams for explaining a manufacturing method of the semiconductor device (active matrix substrate 1002) according to the first embodiment, in which FIGS.
- FIGS. 4A and 4B are cross-sectional views and FIG. 4A and 4B are process diagrams for explaining a manufacturing method of the semiconductor device (active matrix substrate 1002) according to the first embodiment, in which FIGS. 4A and 4B are cross-sectional views and FIG. 4A and 4B are process diagrams for explaining a manufacturing method of the semiconductor device (active matrix substrate 1002) according to the first embodiment, in which FIGS. 4A and 4B are cross-sectional views and FIG. 4A and 4B are process diagrams for explaining a manufacturing method of the semiconductor device (active matrix substrate 1002) according to the first embodiment, in which FIGS. 4A and 4B are cross-sectional views and FIG.
- FIGS. 4A and 4B are process diagrams for explaining a manufacturing method of the semiconductor device (active matrix substrate 1002) according to the first embodiment, in which FIGS. 4A and 4B are cross-sectional views and FIG. 4A and 4B are process diagrams for explaining a manufacturing method of the semiconductor device (active matrix substrate 1002) according to the first embodiment, in which FIGS. 4A and 4B are cross-sectional views and FIG. (A) is a diagram showing Ids-Vgs characteristics in the initial state (semiconductor state) of the memory transistor 10A, and (b) is a diagram showing Ids-Vds characteristics in the initial state of the memory transistor 10A.
- FIG. 10 is a diagram showing the Ids-Vgs characteristics of the memory transistor 10A before and after writing in an overlapping manner. It is a figure which shows the relationship between the differential resistance (dVds / dIds, unit: ohm micrometer) of the memory transistor 10A before and behind writing, and the drain voltage Vds.
- FIG. 4 is a process diagram for explaining a method for manufacturing a semiconductor device (active matrix substrate 1003) of a second embodiment, wherein (a) and (b) are sectional views, and (c) are top views.
- FIG. 4 is a process diagram for explaining a method for manufacturing a semiconductor device (active matrix substrate 1003) of a second embodiment, wherein (a) and (b) are sectional views, and (c) are top views.
- FIG. 4 is a process diagram for explaining a method for manufacturing a semiconductor device (active matrix substrate 1003) of a second embodiment, wherein (a) and (b) are sectional views, and (c) are top views.
- FIG. 4 is a process diagram for explaining a method for manufacturing a semiconductor device (active matrix substrate 1003) of a second embodiment, wherein (a) and (b) are sectional views, and (c) are top views.
- FIG. 4 is a process diagram for explaining a method for manufacturing a semiconductor device (active matrix substrate 1003) of a second embodiment, wherein (a) and (b) are sectional views, and (c) are top views.
- FIG. 4 is a process diagram for explaining a method for manufacturing a semiconductor device (active matrix substrate 1003) of a second embodiment, wherein (a) and (b) are sectional views, and (c) are top views.
- FIG. 4 is a process diagram for explaining a method for manufacturing a semiconductor device (active matrix substrate 1003) of a second embodiment, wherein (a) and (b) are sectional views, and (c) are top views.
- (A) And (b) is the top view and sectional drawing which respectively show memory transistor 10D in the semiconductor device of 3rd Embodiment.
- FIG. 4 is a process diagram for explaining a method for manufacturing a semiconductor device (active matrix substrate 1004) of a third embodiment, wherein (a) and (b) are cross-sectional views, and (c) are top views.
- FIG. 4 is a process diagram for explaining a method for manufacturing a semiconductor device (active matrix substrate 1004) of a third embodiment, wherein (a) and (b) are cross-sectional views, and (c) are top views.
- FIG. 4 is a process diagram for explaining a method for manufacturing a semiconductor device (active matrix substrate 1004) of a third embodiment, wherein (a) and (b) are cross-sectional views, and (c) are top views.
- FIG. 4 is a process diagram for explaining a method for manufacturing a semiconductor device (active matrix substrate 1004) of a third embodiment, wherein (a) and (b) are cross-sectional views, and (c) are top views.
- FIG. 4 is a process diagram for explaining a method for manufacturing a semiconductor device (active matrix substrate 1004) of a third embodiment, wherein (a) and (b) are cross-sectional views, and (c) are top views.
- FIG. 4 is a process diagram for explaining a method for manufacturing a semiconductor device (active matrix substrate 1004) of a third embodiment, wherein (a) and (b) are cross-sectional views, and (c) are top views.
- FIGS. 7A to 7C are a plan view and a cross-sectional view illustrating the configuration of another memory transistor in the embodiment according to the invention.
- FIGS. (A) to (c) are cross-sectional views illustrating the configuration of another memory transistor in the embodiment according to the invention.
- Patent Document 3 the knowledge found by the present inventor regarding the configuration of the memory transistor (Patent Document 3) using the change from the semiconductor state to the resistor state will be described.
- the writing of the memory transistor is performed by reducing the resistance of the metal oxide layer, which is the active layer of the memory transistor, by Joule heat generated by the drain current (writing current). At the time of writing, heat is generated in the metal oxide layer of the memory transistor.
- the writing time can be further shortened.
- the amount of heat generated can be increased by applying a larger amount of power to the memory transistor.
- increasing the calorific value has the following problems.
- the amount of heat generated during writing increases particularly near the drain electrode in the metal oxide layer (channel region).
- the drain side of the metal oxide layer locally becomes a high temperature of, for example, 1000 ° C. or higher. Therefore, when the memory transistor has a bottom gate structure, a metal layer made of a metal having a relatively low melting point such as aluminum or copper is provided as a drain electrode on the upper surface of the metal oxide layer. There is a risk that the metal melts due to heat generated during writing. As a result, the drain electrode and the metal oxide layer are not electrically connected, and the current path between the source, the metal oxide layer, and the drain is interrupted (the current does not flow between the source and the drain). May occur and the memory transistor may be destroyed. For this reason, it may be difficult to perform a normal read operation from the memory transistor after writing.
- a metal wiring film including a source and a drain it has been proposed to use a laminated film in which a Ti film and an Al alloy film are stacked in this order from the metal oxide layer side (for example, JP 2010-123748 A). Publication).
- a metal having a relatively low melting point such as Al and Cu does not directly contact the metal oxide layer.
- a metal having a relatively low melting point is located above the metal oxide layer, it may be melted at the time of writing even when it is not in direct contact with the metal oxide layer. It was confirmed.
- a metal having a relatively high melting point such as Ti does not melt due to heat during writing even if it is located on the metal oxide layer.
- the inventor forms a portion of the drain electrode of the memory transistor on the metal oxide layer with a metal having a relatively high melting point so as not to include a metal with a low melting point.
- the present inventors have found that the above-described problems caused by heat generation during writing can be solved, and have reached the present invention. According to such a configuration, it is possible to shorten the writing time as compared with the conventional one while suppressing the deterioration of the reliability of the memory transistor due to the heat at the time of writing.
- FIG. 1A is a cross-sectional view showing a memory transistor 10A in the semiconductor device of this embodiment, and FIG. 1B is a plan view of the memory transistor 10A.
- FIG. 1A shows a cross-sectional structure taken along the line II ′ of FIG.
- the semiconductor device of this embodiment includes a substrate 1 and a memory transistor 10A supported on the substrate 1.
- the memory transistor 10A is, for example, an n-channel type memory transistor.
- the memory transistor 10A includes a gate electrode 3, an active layer containing metal oxide (hereinafter referred to as "metal oxide layer") 7, and a gate insulating film 5 disposed between the gate electrode 3 and the metal oxide layer 7. And a source electrode 9 s and a drain electrode 9 d electrically connected to the metal oxide layer 7.
- metal oxide layer an active layer containing metal oxide
- a source electrode 9 s and a drain electrode 9 d electrically connected to the metal oxide layer 7.
- the gate electrode 3 is disposed on the substrate 1 side of the metal oxide layer 7 (bottom gate structure).
- the source electrode 9 s may be in contact with a part of the metal oxide layer 7, and the drain electrode 9 d may be in contact with another part of the metal oxide layer 7.
- a region in contact (or electrical connection) with the source electrode 9 s is “source contact region”, and a region in contact with (or electrical connection with) the drain electrode 9 d is “drain contact region”. Called.
- a region of the metal oxide layer 7 that overlaps with the gate electrode 3 and the gate insulating film 5 and is located between the source contact region and the drain contact region is a channel. It becomes area 7c.
- the source electrode 9s and the drain electrode 9d are in contact with the upper surface of the metal oxide layer 7, when viewed from the normal direction of the substrate 1, between the source electrode 9s and the drain electrode 9d in the metal oxide layer 7 The region located at is the channel region 7c.
- the drain electrode 9d has a laminated structure including a first drain metal layer 9d1 formed of a first metal and a second drain metal layer 9d2 formed of a second metal having a melting point lower than that of the first metal.
- a first drain metal layer 9d1 formed of a first metal and a second drain metal layer 9d2 formed of a second metal having a melting point lower than that of the first metal.
- “Formed with the first metal (or the second metal)” means that the first metal (or the second metal) is mainly included.
- the first or second metal may be a single metal or an alloy.
- the first metal contained in the first drain metal layer 9d1 is a metal having a melting point of 1200 ° C. or higher, preferably 1600 ° C. or higher (hereinafter referred to as “first metal”).
- the first metal may be a single metal or an alloy.
- the first metal include Ti (titanium, melting point: 1667 ° C.), Mo (molybdenum, melting point: 2623 ° C.), Cr (chromium, melting point: 1857 ° C.), W (tungsten, melting point: 3380 ° C.), Ta (tantalum). , Melting point: 2996 ° C.), or an alloy thereof.
- the second metal contained in the second drain metal layer 9d2 is a metal having a melting point lower than that of the first metal (hereinafter referred to as “second metal”).
- the melting point of the second metal may be less than 1200 ° C., for example 700 ° C. or less.
- the second metal for example, Al (aluminum, melting point: 660 ° C.), Cu (copper, melting point: 1083 ° C.), or the like can be used.
- the source electrode 9s and the drain electrode 9d may be formed of a common conductive film.
- the source electrode 9s and the drain electrode 9d are formed of a common laminated film including a first metal film 9L formed of a first metal and a second metal film 9U formed of a second metal. It is formed using. Accordingly, the source electrode 9s has a laminated structure including the first metal film 9L and the second metal film 9U.
- the layers formed of the first metal film 9L and the second metal film 9U in the source electrode 9s are referred to as a first source metal layer 9s1 and a second source metal layer 9s2, respectively.
- the drain electrode 9d has a stacked structure including a first drain metal layer 9d1 formed from the first metal film 9L and a second drain metal layer 9d2 formed from the second metal film 9U. .
- Each of the first metal film 9L and the second metal film 9U may be a conductor layer mainly containing the above metal, and not only a layer made of a single metal but also an alloy layer, a metal nitride layer, a metal silicide layer, etc. May also be included.
- the drain electrode 9 d When viewed from the normal direction of the surface of the substrate 1, the drain electrode 9 d has a portion P that overlaps both the gate electrode 3 and the metal oxide layer 7.
- a portion P of the drain electrode 9d that overlaps both the gate electrode 3 and the metal oxide layer 7 includes the first drain metal layer 9d1 (first metal film 9L), and the second drain metal layer 9d2 (second metal).
- the membrane 9U) is not included.
- the portion P may be composed of only the first drain metal layer 9d1, or may include a metal layer having a high melting point other than the first drain metal layer 9d1.
- the drain current Ids depends on the gate voltage Vgs (referred to as “semiconductor state”) to the state where the drain current Ids does not depend on the gate voltage Vgs (referred to as “resistor state”). It is a non-volatile memory element that can be irreversibly changed.
- the drain current Ids is a current flowing between the source electrode 9s and the drain electrode 9d (between the source and drain) of the memory transistor 10A, and the gate voltage Vgs is between the gate electrode 3 and the source electrode 9s (gate-source). Voltage).
- the above state change occurs, for example, when a predetermined write voltage Vds is applied between the source and drain of the memory transistor 10A in the semiconductor state (initial state) and a predetermined gate voltage is applied between the gate and source.
- Application of the write voltage Vds causes a current (write current) to flow through a portion (channel region) 7c of the metal oxide layer 7 where a channel is formed, thereby generating Joule heat. Due to this Joule heat, the channel region 7 c of the metal oxide layer 7 is reduced in resistance.
- a resistor state having an ohmic resistance characteristic is obtained without depending on the gate voltage Vgs. The reason why the resistance of the oxide semiconductor is lowered is currently being elucidated.
- the second drain metal layer 9d2 is not disposed in the vicinity of the drain side end portion having high Joule heat. More specifically, when viewed from the normal direction of the surface of the substrate 1, the first drain metal layer 9 d 1 containing a metal having a relatively high melting point in the drain electrode 9 d is formed of the gate electrode 3 and the metal oxide layer 7.
- the channel region 7c is defined so as to overlap both.
- the second drain metal layer 9d2 containing a metal having a relatively low melting point is not disposed on the metal oxide layer 7, the metal contained in the second drain metal layer 9d2 is caused by the heat generated during writing. Melting can be suppressed. Therefore, the destruction and deformation of the memory transistor 10A due to metal melting can be suppressed.
- the entire metal oxide layer 7 overlaps the gate electrode 3, but at least a part of the metal oxide layer 7 is in contact with the gate electrode 3.
- position so that it may overlap.
- the second drain metal layer 9d2 is not located on a portion of the metal oxide layer 7 overlapping the gate electrode 3, the same effect as described above can be obtained.
- the second drain metal layer 9 d 2 may not overlap with both the metal oxide layer 7 and the gate electrode 3, and may overlap with either one. Absent.
- the drain electrode 9d has a two-layer structure including the first and second drain metal layers 9d1 and 9d2, but may include three or more layers including other conductive layers.
- the first drain metal layer 9 d 1 may be in contact with the upper surface of the metal oxide layer 7.
- a Ti or Mo layer is used as the first drain metal layer 9d1
- the contact resistance can be reduced by arranging the first drain metal layer 9d1 and the metal oxide layer 7 in contact with each other.
- another conductive layer such as a contact layer may be formed between the metal oxide layer 7 and the first drain metal layer 9d1.
- the upstream side in the direction in which the drain current Ids flows is the drain, and the downstream side is the source.
- the “source electrode” refers to an electrode electrically connected to the source side of the active layer (here, the metal oxide layer 7), and may be a part of a wiring (source wiring).
- the “source electrode” includes not only a contact portion directly in contact with the source side of the active layer but also a portion located in the vicinity thereof.
- the “source electrode” includes a portion of the source wiring located in the memory transistor formation region.
- the “source electrode” may include a portion from the contact portion in contact with the active layer of the source wiring to connection to another element or another wiring.
- the “drain electrode” refers to an electrode electrically connected to the drain side of the active layer (here, the metal oxide layer 7), and may be a part of a wiring.
- the “drain electrode” includes not only the contact portion directly in contact with the drain side of the active layer but also a portion located in the vicinity thereof.
- the “drain electrode” includes a portion of the wiring located in the memory transistor formation region. For example, a portion from a contact portion in contact with the active layer to a connection to another element or another wiring in the wiring can be included.
- the portion P of the drain electrode 9d includes the first drain metal layer 9d1 and does not include the second drain metal layer 9d2 (or n-layer structure (n: natural number of 2 or more)), drain electrode
- the other part has a two-layer structure (or (n + 1) layer structure) including the first drain metal layer 9d1 and the second drain metal layer 9d2.
- the source electrode 9 s may have a portion Q that overlaps both the metal oxide layer 7 and the gate electrode 3 when viewed from the normal direction of the surface of the substrate 1.
- a portion Q of the source electrode 9s that overlaps both the metal oxide layer 7 and the gate electrode 3 may include not only the first source metal layer 9s1 but also the second source metal layer 9s2.
- the amount of heat generated by the write current is smaller than that on the drain side. For this reason, even if the second source metal layer 9s2 is disposed in the vicinity of 7c, the second metal contained in the second source metal layer 9s2 is hardly melted, and the memory transistor 10A is damaged by the heat generated during writing. It is difficult.
- the source electrode 9s and the drain electrode 9d have different merits at the end on the channel region 7c side, thereby maximizing the merit of using a metal layer (Al layer or the like) having a relatively high electrical conductivity. It is possible to reduce damage due to heat generation during writing while enjoying the limit.
- the portion Q of the source electrode 9s may include the first source metal layer 9s1 and may not include the second source metal layer 9s2. Thereby, damage due to heat generation during writing can be more reliably reduced.
- one of the drain electrode 9 d and the source electrode 9 s has a recess on the metal oxide layer 7.
- the other electrode here, the drain electrode 9d
- the channel region 7c located between the source electrode 9s and the drain electrode 9d has a U shape.
- the width of the gap located between the source electrode 9s and the drain electrode 9d is the channel length (length in the channel direction) L1.
- the length of the line connecting the bisectors of the distance is the channel width (length in the direction orthogonal to the channel direction) W1.
- the planar shape of the channel region 7c of the memory transistor 10 is not limited to the U shape, and may be, for example, a rectangle.
- the structure of the memory transistor 10A is not limited to the bottom gate structure, and may be a top gate structure having the gate electrode 3 above the metal oxide layer 7. Even when the memory transistor 10A has any of the structures described above, the second drain metal layer 9d2 is arranged so as not to overlap both the gate electrode 3 and the metal oxide layer 7 when viewed from the normal direction of the substrate 1. If so, the above-described effects of the present invention can be obtained.
- the first drain metal layer 9d1 may be in direct contact with the metal oxide layer 7. Thereby, the contact resistance between the first drain metal layer 9d1 and the metal oxide layer 7 can be reduced.
- the first drain metal layer 9d1 may be in contact with the upper surface of the metal oxide layer 7 (top contact structure), or may be in contact with the lower surface of the metal oxide layer 7 (bottom contact structure).
- the stacking order of the first drain metal layer 9d1 (first metal film 9L) and the second drain metal layer 9d2 (second metal film 9U) is not particularly limited.
- the first drain metal layer 9 d 1 is disposed on the substrate 1 side with respect to the second drain metal layer 9 d 2, but may be disposed on the opposite side of the substrate 1.
- the source electrode 9s and the drain electrode 9d have the second source metal layer 9s2 or the second drain metal layer 9d2 as a lower layer, and the first source metal layer 9s1 or the first drain metal layer. It may have a laminated structure with 9d1 (first metal film 9L) as an upper layer.
- the second metal film 9U (the second drain metal layer 9d2 and the second source metal layer 9s2) is formed. Diffusion of the contained second metal (especially Al, Cu) into the metal oxide layer 7 can be suppressed by the first metal film 9L (first drain metal layer 9d1 and first source metal layer 9s1).
- the semiconductor device of this embodiment may include a plurality of memory transistors 10A.
- Each of the plurality of memory transistors 10A preferably has the electrode structure as described above.
- the semiconductor device after performing the writing operation includes a semiconductor transistor (memory transistor ST) in a semiconductor state and a memory transistor (memory transistor RT) in a resistor state.
- the metal constituting the drain electrode 9d is melted by the heat at the time of writing, and as a result, it is possible to suppress the occurrence of damage such as breaking the current path between the source-metal oxide layer and the drain. Further, for example, it is difficult to distinguish the memory transistors ST and RT only when viewed from the normal direction of the substrate 1, so that security is improved.
- the metal oxide contained in the metal oxide layer 7 is an oxide containing In, Ga and Zn, for example.
- the metal oxide layer 7 can be formed of a film containing an In—Ga—Zn—O-based semiconductor.
- oxide semiconductor TFT In the case where the memory transistor 10A is formed using a film containing an In—Ga—Zn—O-based semiconductor, another transistor (oxide semiconductor TFT) is formed over the same substrate as the memory transistor 10A using a common semiconductor film. This is advantageous because it can be formed.
- oxide semiconductor TFTs have high mobility (more than 20 times compared to a-Si TFT) and low leakage current (less than 1/100 compared to a-Si TFT). Therefore, the power consumption of the semiconductor device can be greatly reduced.
- the In—Ga—Zn—O based semiconductor may be amorphous or may contain a crystalline part.
- a crystalline In—Ga—Zn—O-based semiconductor in which the c-axis is oriented substantially perpendicular to the layer surface may be used.
- Such a crystal structure of an In—Ga—Zn—O-based semiconductor is disclosed in, for example, Japanese Patent Laid-Open No. 2012-134475. For reference, the entire disclosure of Japanese Patent Application Laid-Open No. 2012-134475 is incorporated herein by reference.
- In—Ga—Zn—O-based semiconductor another semiconductor film that can reduce resistance due to Joule heat may be used.
- a semiconductor film containing NiO, SnO 2 , TiO 2 , VO 2 , In 2 O 3 , or SrTiO 3 may be used.
- Zn—O based semiconductor ZnO
- In—Zn—O based semiconductor IZO (registered trademark)
- Zn—Ti—O based semiconductor ZTO
- Cd—Ge—O based semiconductor Cd—Pb—O Semiconductors such as CdO (cadmium oxide), Mg—Zn—O semiconductors, In—Sn—Zn—O semiconductors (eg, In 2 O 3 —SnO 2 —ZnO), In—Ga—Sn—O semiconductors, etc. It can also be used. Further, films obtained by adding various impurities to these oxide semiconductors may be used.
- the memory transistor 10A can be used in a memory circuit that stores information in a nonvolatile manner, for example, by assigning a semiconductor state (initial state) to a logical value “0” and a resistor state to a logical value “1”.
- a semiconductor state initial state
- a resistor state to a logical value “1”.
- the memory circuit has one or more memory cells.
- FIG. 2 is a diagram illustrating a single memory cell constituting the memory circuit.
- the memory cell has, for example, a memory transistor 10A and a memory cell selection transistor (referred to as a “selection transistor”) 10a connected in series to the memory transistor 10A.
- the memory circuit has, for example, a configuration in which a plurality of memory cells are arranged in a matrix.
- the selection transistor 10a may have an active layer formed of an oxide semiconductor film common to the metal oxide layer 7 of the memory transistor 10A.
- the memory transistor 10A and the selection transistor 10a can be easily manufactured using a common process.
- a write or read operation to the memory transistor 10A can be performed by applying a gate voltage to the selection transistor 10a to turn it on.
- Writing to the memory transistor 10A is performed by applying a predetermined gate voltage Vg to the gate electrode of the memory transistor 10A and applying a predetermined write voltage Vpp to the drain electrode during a period (write time) Tpp. Can do.
- the source electrode of the selection transistor 10a is connected to a fixed voltage (for example, ground potential).
- the write current Ipp flows through the channel region of the memory transistor 10A during the period Tpp. Due to the Joule heat generated by the write current Ipp, the chemical composition ratio of the oxide semiconductor constituting the channel region is changed, and the channel region is in a resistor state in which the resistance is reduced.
- Reading of the memory transistor 10A can be performed by examining the gate voltage dependence of the current (reading current) that flows by applying a predetermined voltage between the source and drain of the memory transistor 10A. Specifically, when it is assumed that the read current flowing through the memory transistor 10A in the semiconductor state is It, it can be easily determined by the ratio of the read current Ir at the time of reading to the current It. When the gate voltage Vgs at the time of reading is set within a predetermined voltage range (for example, about 0.5 V or less), the difference between the reading current It and the reading current Ir is large, so that the state of the memory transistor 10A can be made easier. Can be determined.
- a predetermined voltage range for example, about 0.5 V or less
- Example> the memory transistors 10 (1) and 10 (2) of the example and the reference example were manufactured, and the damage to the memory transistor due to writing was compared.
- FIGS. 3A and 3B are a cross-sectional view and a plan view, respectively, of the memory transistor 10 (1) of the embodiment.
- the portion Q of the source electrode 9 s located on the metal oxide layer 7 is configured only by the first source metal layer 9 s 1, and the second source metal layer 9 s 2 is formed on the metal oxide layer 7. This is different from the memory transistor 10A shown in FIG. Other configurations are the same as those of the memory transistor 10A.
- the first drain metal layer 9d1 and the first source metal layer 9s1 are a Ti layer
- the second drain metal layer 9d2 and the second source metal layer 9s2 are an Al layer
- the metal oxide layer 7 is an In ⁇ layer.
- a Ga—Zn—O-based semiconductor layer was formed.
- the channel length L of the memory transistor 10 (1) is, for example, 1 ⁇ m to 20 ⁇ m
- the channel width is 2 ⁇ m to 1 mm
- the thickness of the metal oxide layer 7 is 5 nm to 500 nm.
- a memory transistor 10 (2) having a transistor structure in which a source and drain electrode having a stacked structure is applied to a conventional bottom gate / top contact type TFT was manufactured.
- FIGS. 4A and 4B are a cross-sectional view and a plan view, respectively, of the memory transistor 10 (2) of the reference example.
- the memory transistor 10 (2) differs from the memory transistor 10 (1) only in that the second source metal layer 9s2 and the second drain metal layer 9d2 are also disposed on the metal oxide layer 7. That is, in the memory transistor 10 (2), the portion P of the drain electrode 9d includes the second drain metal layer 9d2 formed of a metal having a relatively low melting point. Other configurations, materials and thicknesses of the respective layers are the same as those of the memory transistor 10 (1).
- the writing operation was performed on the memory transistors 10 (1) and 10 (2) under the same conditions, and each transistor after writing was observed.
- the write conditions the write voltage Vds was 50 V
- the gate voltage Vgs was 40 V
- the write time was 100 msec.
- FIG. 3 (c) is a top view showing the memory transistor 10 (1) after writing
- FIG. 4 (c) is a top view showing the memory transistor 10 (2) after writing.
- the destruction mark D is formed on the metal oxide layer 7 in the memory transistor 10 (2) of the reference example.
- the fracture mark D is considered to be a trace where the metal melts and breaks at the end of the drain electrode 9d on the channel side.
- the read operation was performed on the memory transistor 10 (2) after writing, current does not flow between the source and the drain, and it is difficult to measure the read current.
- FIG. 3C no deformation or damage mark of the drain electrode 9d is observed, and the read operation can be performed normally. Therefore, according to the present embodiment, it can be understood that the destruction of the memory transistor due to the heat generated during writing can be suppressed.
- the present embodiment can be widely applied to electronic devices including a memory circuit.
- the semiconductor device of the present embodiment is not limited as long as it includes at least one memory transistor 10A.
- it may be a non-volatile semiconductor memory device, an integrated circuit (IC, LSI), various display devices such as a liquid crystal display device and an organic EL display device, and an active matrix substrate used for various display devices.
- the semiconductor device may further include a thin film transistor having an active layer formed of an oxide semiconductor film common to the active layer (metal oxide layer 7) of the memory transistor 10A.
- the thin film transistor may be a circuit element constituting a circuit.
- a memory circuit including a memory transistor 10A may be provided in a region (peripheral region) other than the display region of the active matrix substrate.
- a thin film transistor (circuit transistor) may be formed as a circuit element constituting a peripheral circuit such as a drive circuit.
- a thin film transistor (pixel transistor) may be formed as a switching element provided in each pixel.
- the circuit transistor and the pixel transistor include an active layer formed from an oxide semiconductor film common to the active layer of the memory transistor 10A, a source formed from a stacked conductive film common to the source and drain electrodes of the memory transistor 10A, and You may have a drain electrode.
- the circuit transistor and the pixel transistor may have a transistor structure similar to that of the memory transistor 10A. In this case, these transistors can be manufactured using a process common to the memory transistor 10A. However, since writing is not performed on the circuit transistor and the pixel transistor, a portion of the drain electrode overlapping the active layer and the gate electrode when viewed from the normal direction of the substrate is a metal or alloy having a relatively low melting point. May be included.
- This embodiment can be applied to, for example, an active matrix substrate used in a liquid crystal display device.
- FIG. 5A is a plan view showing a part of the active matrix substrate 1002.
- the active matrix substrate 1002 includes a display area 100 including a plurality of pixels 101 and an area (peripheral area) 200 other than the display area.
- a thin film transistor (referred to as a “pixel transistor”) 10T is formed as a switching element.
- the pixel transistor 10T may have a transistor structure similar to that of the memory transistor 10A (FIG. 1).
- the second drain metal layer 9d2 may also be formed in a portion of the drain electrode 9d that overlaps the metal oxide layer 7 and the gate electrode 3.
- peripheral region 200 At least a part of a plurality of circuits (memory circuit, drive circuit, etc.) constituting the display device is formed monolithically.
- a circuit formed in the peripheral region 200 is referred to as a “peripheral circuit”.
- the memory transistor 10A is used in a memory circuit formed in the peripheral region 200, for example.
- Each pixel 101 is provided with a source wiring S extending along the pixel column direction, a gate wiring G extending along the pixel row direction, and a pixel electrode 19.
- the pixel transistor 10T is disposed in the vicinity of the point where the source line S and the gate line G intersect.
- the pixel 101 is provided with a capacitor wiring CS formed of the same conductive film as the gate wiring G.
- a capacitor unit 20 is disposed on the capacitor wiring CS.
- the source wiring S, the source and drain electrodes of the pixel transistor 10T and the memory transistor 10A are formed in the same wiring (source wiring layer).
- the source wiring layer includes, for example, a first metal film 9L (FIG. 1) formed from a metal having a relatively high melting point and a second metal film 9U (FIG. 1) formed from a metal having a lower melting point. You may have the laminated structure containing.
- the peripheral region 200 is provided with a plurality of terminal portions 201 for connecting the gate wiring G or the source wiring S to the external wiring.
- the source line S extends to the end of the display region 100 and is connected to the source connection portion 9sg.
- the source connection portion 9sg is electrically connected to the gate connection portion 3sg formed of the same film as the gate wiring G. This connection portion is referred to as a “source / gate connection portion” 30.
- the gate connection portion 3sg extends to the peripheral region 200 and is connected to, for example, a source driver (not shown) via a terminal portion (source terminal) 201.
- the gate line G also extends to the peripheral region 200 and is connected to, for example, a gate driver (not shown) via a terminal portion (gate terminal).
- a plurality of peripheral circuits including a memory circuit are formed monolithically.
- a driving circuit such as a gate driver or a source driver and a memory circuit connected to each driving circuit may be formed.
- the memory circuit includes a memory transistor 10A shown in FIG.
- the active matrix substrate 1002 can be applied to a display device such as a liquid crystal display device.
- the liquid crystal display device includes an active matrix substrate 1002, a counter substrate 41 having a counter electrode 42 on the surface, and a liquid crystal layer 43 disposed therebetween.
- a voltage is applied to the liquid crystal layer 43 for each pixel by the pixel electrode 19 and the counter electrode 42, whereby display is performed.
- FIG. 6 is a diagram illustrating a block configuration of a liquid crystal display device 2001 using the active matrix substrate 1002.
- FIGS. 7A and 7B are schematic diagrams showing the configuration of the memory cells constituting the nonvolatile memory devices 60a to 60c and the pixel circuit of the liquid crystal display device 2001, respectively.
- the liquid crystal display device 2001 includes a display unit 71 including a plurality of pixels.
- the display unit 71 corresponds to the display region 100 (FIG. 5A) of the active matrix substrate 1002.
- the display unit 71 has a plurality of pixel circuits 70 arranged in a matrix. These pixel circuits 70 are connected to each other by source lines SL1 to SLk, gate lines GL1 to GLj, and auxiliary capacitance lines CSL1 to CSLj.
- Each pixel circuit 70 includes a pixel transistor 10T, a liquid crystal capacitor Clc, and an auxiliary capacitor Cs, as shown in FIG. 7B.
- the source electrode of the pixel transistor 10T is connected to the source line S
- the gate electrode is connected to the gate line G
- the drain electrode is connected to the pixel electrode (not shown).
- a liquid crystal capacitor Clc is formed by the pixel electrode and the common electrode COM
- an auxiliary capacitor Cs is formed by the pixel electrode and the capacitor wiring CS.
- the liquid crystal display device 2001 also includes a source driver 75 electrically connected to the source line S, a gate driver 76 electrically connected to the gate line G, a CS driver 77 electrically connected to the capacitor line CS, A common electrode drive circuit 74 for driving the common electrode is provided.
- These drive circuits 75, 76, 77, 74 supply power to the display control circuit 73 that controls timing and voltages applied to the source wiring S, gate wiring G, capacitance wiring CS, and common electrode, and these circuits. It is connected to a power supply circuit (not shown).
- the source driver 75, the gate driver 76, and the display control circuit 73 are connected to the nonvolatile storage devices 60a, 60b, and 60c, respectively.
- the nonvolatile storage devices 60a, 60b, and 60c are connected to the common memory control circuit unit 61.
- Nonvolatile memory devices 60a, 60b, and 60c have, for example, a configuration in which a plurality of memory cells are arranged in an array.
- the memory cell includes a memory transistor 10A.
- the memory cell may have the configuration described above with reference to FIG. Alternatively, as illustrated in FIG. 7A, two or more selection transistors 10a and 10b connected in parallel may be provided instead of the selection transistor 10a illustrated in FIG.
- the nonvolatile storage device 60a stores display panel configuration information, a unique ID, and the like.
- Information stored in the nonvolatile storage device 60a is referred to by the display control circuit 73, and detailed display control methods are switched or control parameters are optimized based on the information.
- the unique ID or the like can be inquired from the system side connected to the display panel, and is used for discrimination of the display panel, selection of an optimum driving method, and the like.
- the display control circuit 73 switches a circuit used for display control based on information stored in the nonvolatile storage device 60a, and realizes optimal display control of the display.
- the nonvolatile storage device 60b stores information on configuration parameters necessary for driving the gate driver, such as redundant relief information for the gate driver.
- the nonvolatile memory device 60c stores information on configuration parameters necessary for driving the source driver, such as redundant relief information for the source driver.
- FIG. 5A shows a monolithic structure.
- the gate driver 76 is monolithically formed on the active matrix substrate.
- FIGS. 8 to 13 are process diagrams for explaining the manufacturing method of the active matrix substrate 1002, in which (a) and (b) are sectional views, and (c) is a top view.
- regions R (10A) and R (10B) for forming the memory transistors 10A and 10B in the active matrix substrate 1002, the region R (20) for forming the capacitor portion 20, and the gate-source contact portion 30 are formed.
- a region R (30) and a region R (40) forming the gate-source intersection 40 are shown.
- the gate-source intersection 40 includes a gate wiring or a conductive layer formed from the same conductive film as the gate wiring and a conductive layer formed from the same conductive film as the source wiring or the source wiring through an insulating layer. Refers to the intersection.
- the formation regions of the memory transistors 10A and 10B, the capacitor portion 20, and the like are shown side by side for convenience, but the arrangement of these formation regions is not limited to the arrangement shown in the drawing.
- the semiconductor device 1002 does not need to include two types of memory transistors 10A and 10B, and only needs to include one of the memory transistors.
- a conductive film for a gate is formed on the substrate 1 by, for example, a sputtering method, and is patterned by a well-known dry etching method.
- the gate connection portion 3sg is formed in the gate / source contact portion formation region R (30)
- the gate wiring is formed in the gate / source intersection formation region R (40).
- a gate electrode 3A is formed in the memory transistor formation region R (10A)
- a capacitor wiring CS is formed in the capacitor portion formation region R (20)
- a gate electrode 3B is formed in the memory transistor formation region R (10B).
- a layer including these wirings and electrodes formed from the gate conductive film is referred to as a “gate wiring layer”.
- a transparent insulating substrate such as a glass substrate
- a conductive film for a gate for example, a single layer film such as aluminum (Al), chromium (Cr), copper (Cu), tantalum (Ta), titanium (Ti), molybdenum (Mo), or tungsten (W), A laminated film in which two or more layers are laminated, or an alloy film containing two or more elements among the above metal elements may be used.
- a three-layer film (Ti / Al / Ti) having a Ti film, an Al film and a Ti film in this order from the substrate 1 side, a three-layer film (Mo / Al) having a Mo film, an Al film and a Mo film in this order. / Mo) or the like can be used.
- a gate insulating film 5 is formed so as to cover the gate wiring layer.
- the gate insulating film 5 is formed by, for example, a plasma CVD method or a sputtering method.
- Examples of the gate insulating film 5 include a silicon oxide film (SiO 2 ), a silicon nitride film (SiN), a silicon oxynitride film (SiNO), a silicon nitride oxide film (SiON), aluminum oxide (Al 2 O 3 ), and an oxide.
- a single layer selected from tantalum (Ta 2 O 5 ) or a laminated film of two or more layers may be used.
- a two-layer film having an SiN film having a thickness of 100 to 500 nm and an SiO 2 film having a thickness of 20 to 100 nm in this order from the substrate 1 side is used.
- the oxide semiconductor film is patterned by a well-known wet etching method. Accordingly, as shown in FIGS. 9A to 9C, the metal oxide layer 7A is formed in the memory transistor formation region R (10A), and the metal oxide layer 7B is formed in the memory transistor formation region R (10B). Form.
- the metal oxide layers 7A and 7B are arranged so as to overlap the corresponding gate electrodes 3A and 3B with the gate insulating film 5 interposed therebetween, respectively.
- the widths of the gate electrodes 3A and 3B in the channel direction are made substantially equal, and the width of the metal oxide layer 7A in the channel direction is made smaller than the width of the metal oxide layer 7B in the channel direction.
- the width in the channel direction of the metal oxide layer 7A is smaller than the width in the channel direction of the gate electrode 3A, and the width in the channel direction of the metal oxide layer 7B is set in the channel direction of the gate electrode 3B. It may be larger than the width.
- an oxide semiconductor film containing In, Ga, and Zn can be used.
- an In—Ga—Zn—O-based amorphous oxide semiconductor film (thickness :, for example, 5 to 500 nm) is used.
- This semiconductor film is an n-type metal oxide semiconductor and is formed at a low temperature.
- the composition ratio In: Ga: Zn of each metal element in the In—Ga—Zn—O-based oxide semiconductor film is, for example, 1: 1: 1. Even if the composition ratio is adjusted on the basis of this composition ratio, the effect of the present invention is obtained.
- the first metal film 9L is the lower layer
- the first metal film 9L may be a metal film formed of a metal (including an alloy) having a relatively high melting point. Alternatively, it may be a film made of a metal compound such as a metal nitride having a relatively high melting point.
- the first metal film 9L may be a metal film such as W, Ta, Ti, Mo, Cr, for example.
- Second metal film 9U may be a metal film formed of a metal (including an alloy) having a relatively low melting point. Alternatively, it may be a film made of a metal compound such as a metal nitride having a relatively low melting point.
- the second metal film 9U may be a metal film such as Cu or Al.
- the source conductive film is, for example, a Ti film-Al film two-layer structure with a Ti film as a lower layer and an Al film as an upper layer, a Mo film as a lower layer, and a Mo film-Al film with a two-layer structure as an upper layer, or , You may have a laminated structure of three or more layers including these two layers.
- a Ti film thickness: 10 to 100 nm
- an Al film is formed as the second metal film 9U by sputtering, for example.
- First patterning is performed on the source conductive film 9 including the first and second metal films 9L and 9U by, for example, wet etching.
- the wet etching is performed under the condition that only the second metal film 9U is etched and the first metal film 9L is not etched.
- openings are formed in portions of the second metal film 9U located on the metal oxide layers 7A and 7B of the memory transistors 10A and 10B, respectively. In these openings, the first metal film 9L is exposed.
- Each opening is provided on a portion including the entire region serving as the drain contact region and a part of the region serving as the channel region in the metal oxide layers 7A and 7B.
- a resist layer M having an opening is formed on the source conductive film 9 on the region to be the channel region of the memory transistors 10A and 10B.
- second patterning is performed on the source conductive film using the resist layer M.
- the second metal film 9U is removed by wet etching using the resist layer M as a mask, and then the first metal film 9L is removed by dry etching.
- portions of the first and second metal films 9L and 9U located on the region to be the channel region of the metal oxide layers 7A and 7B are removed (source-drain separation).
- the source electrodes 9sA and 9sB and the drain electrodes 9dA and 9dB are formed in the memory transistor formation regions R (10A) and R (10B). Further, the source connection portion 9sg is formed in the gate / source contact portion formation region R (30), the source wiring S is formed in the gate / source intersection formation region R (40), and the capacitance electrode 9cs is formed in the capacitance portion formation region R (20).
- the A layer including these wirings and electrodes formed from the source conductive film is referred to as a “source wiring layer”.
- the source electrodes 9sA and 9sB are stacked with the first source metal layers 9s1A and 9s1B formed from the first metal film 9L as the lower layer and the second source metal layers 9s2A and 9s2B formed from the second metal film 9U as the upper layers. It is an electrode (or laminated wiring).
- the drain electrodes 9dA and 9sB have the first drain metal layers 9d1A and 9d1B formed from the first metal film 9L as the lower layer and the second drain metal layers 9d2A and 9d2B formed from the second metal film 9U as the upper layers. Is a laminated electrode (or laminated wiring).
- the second metal film 9U is patterned by wet etching
- the end of the second metal film 9U in the source wiring layer is more than the end of the resist layer M when viewed from the normal direction of the substrate 1. Is also located inside.
- the first metal film 9L is patterned by dry etching
- the end of the first metal film 9L and the end of the resist layer M are substantially aligned. Accordingly, when the source wiring layer is viewed from the normal direction of the substrate 1, the second metal film 9U is located inside the outline of the first metal film 9L. In the cross-sectional view, the end of the second metal film 9U is located on the first metal film 9L.
- the second metal film 9U on the region serving as the drain contact region is removed by the first patterning, only the first metal film 9L is formed on the drain contact regions of the metal oxide layers 7A and 7B. Remain.
- the source electrode 9sA and the drain electrode 9dA are arranged so as to be electrically separated from each other and in contact with a part of the metal oxide layer 7A.
- the source electrode 9sB and the drain electrode 9dB are disposed so as to be electrically separated from each other and in contact with a part of the metal oxide layer 7B.
- the region of the metal oxide layers 7A and 7B overlaps with the corresponding gate electrodes 3A and 3B and is located between the source electrodes 9sA and 7sB and the drain electrodes 9dA and 7dB. Becomes the channel regions 7cA and 7cB.
- the source electrode 9sA and the drain electrode 9dA are arranged so that the channel region 7cA is U-shaped when viewed from the normal direction of the substrate 1.
- the source electrode 9sB and the drain electrode 9dB are arranged so that the channel region 7cB is rectangular when viewed from the normal direction of the substrate 1.
- the memory transistors 10A and 10B are formed.
- the portion of the drain electrodes 9dA and 9dB that overlaps both the metal oxide layers 7A and 7B and the gate electrodes 3A and 3B is composed of only the first metal film 9L, and the second metal film 9U.
- portions of the source electrodes 9sA and 9sB that overlap both the metal oxide layers 7A and 7B and the gate electrodes 3A and 3B include the first metal film 9L and the second metal film 9U.
- the capacitor portion 20 having the capacitor wiring CS, the capacitor electrode 9cs, and the dielectric layer (here, the gate insulating film 5) positioned therebetween is formed.
- the gate / source intersection forming region R (40) a gate / source intersection 40 is formed at which the gate line G and the source line S intersect via the gate insulating film 5.
- the source connection part 9sg is arranged so as to overlap a part of the gate connection part 3sg with the gate insulating film 5 interposed therebetween.
- the pixel transistor 10T (see FIGS. 5A and 5B) and the circuit transistor can also be formed by a process common to the memory transistors 10A and 10B.
- the second metal film 9U of the drain electrode may be disposed on the metal oxide layer 7 as illustrated in FIG.
- a protective film (passivation film) 11 is formed so as to cover the source wiring layer by, for example, plasma CVD or sputtering.
- the protective film 11 include a silicon oxide film (SiO 2 ), a silicon nitride film (SiN), a silicon oxynitride film (SiNO), a silicon nitride oxide film (SiON), aluminum oxide (Al 2 O 3 ), and tantalum oxide ( A single layer selected from Ta 2 O 5 ) or a laminated film of two or more layers may be used.
- a SiO 2 film thickness: for example, 50 to 500 nm
- the protective film 11 by the CVD method.
- annealing is performed for 30 minutes to 4 hours at a temperature of 200 to 400 ° C. in an air atmosphere. Thereby, a reaction layer is formed at the interface between the source electrodes 9sA and 9sB and the drain electrodes 9dA and 9dB and the metal oxide layers 7A and 7B. Therefore, the contact resistance between the source electrodes 9sA and 9sB and the drain electrodes 9dA and 9dB and the metal oxide layers 7A and 7B can be reduced.
- a planarizing film may be formed on the passivation film 11 as necessary.
- an organic insulating film 13 such as a photosensitive resin is formed as the planarizing film.
- the organic insulating film 13 is patterned by a known photolithography method (exposure, development, baking). As a result, an opening is formed in a portion of the organic insulating film 13 located on the gate / source contact portion formation region R (30).
- the gate insulating film 5 and the passivation film 11 are etched using the organic insulating film 13 as a mask. In the etching, the source connection portion 9sg and the gate connection portion 3sg function as an etch stop. Therefore, the portion of the gate insulating film 5 covered with the source connection portion 9sg remains without being etched. In this way, the contact hole 15 exposing the surfaces of the gate connection portion 3sg and the source connection portion 9sg is obtained.
- a conductive film is formed in the contact hole 15 and on the organic insulating film 13 and patterned.
- the upper conductive layer 17 that electrically connects the gate connection portion 3sg and the source connection portion 9sg in the contact hole 15 is obtained. In this way, the gate / source contact portion 30 is formed.
- a transparent conductive film such as an ITO film (thickness: about 20 nm to 300 nm, for example) is used as the conductive film.
- a pixel electrode 19 (FIG. 5A) formed in each pixel can also be formed from this conductive film. In this way, an active matrix substrate 1002 is obtained.
- the semiconductor device of the present embodiment is not limited to the active matrix substrate 1002 or a display device using the active matrix substrate 1002.
- This embodiment can be suitably applied to a device including an oxide semiconductor TFT and a nonvolatile memory.
- the memory transistor 10A can be manufactured at a relatively low temperature (for example, 200 ° C. or lower), it can be applied to an IC tag or the like. In this case, the memory transistor 10A can be used for storing IDs.
- a transparent metal oxide film can be used as the oxide semiconductor film, the oxide semiconductor film can be used for a mass storage device for digital signage.
- the present invention can be applied to programmable logic circuit devices such as ASIC (Application Specific Integrated Circuit) and FPGA (Field-Programmable Gate Array).
- the memory transistor 10A an n-channel thin film transistor using an In—Ga—Zn—O-based oxide semiconductor as the metal oxide layer 7 was manufactured, and electrical characteristics before and after writing were measured.
- the channel length L1 of the memory transistor 10A used for the measurement was 4 ⁇ m
- the channel width W1 was 20 ⁇ m
- the thickness of the active layer (metal oxide layer) 7A was 20 to 100 nm
- the planar shape of the channel region 7cA was rectangular or U-shaped. .
- the memory transistor 10A exhibits transistor characteristics just like a normal thin film transistor immediately after it is manufactured (initial state). That is, the drain current Ids (current flowing from the drain electrode to the source electrode) is applied to the gate electrode Vgs (voltage applied to the gate electrode with reference to the source electrode) and the drain voltage Vds (voltage applied to the drain electrode with reference to the source electrode). Vary depending on each of the voltage.
- FIG. 14B is a diagram showing Ids-Vds characteristics when Vgs is changed from 0 to 7V in increments of 1V in the initial state of the memory transistor 10A.
- the value of the drain current Ids in FIGS. 14A and 14B indicates the value of the drain current (unit drain current) per unit gate width (1 ⁇ m).
- the gate voltage Vgs in the range of about 0.5 V or less (specific voltage range), and the drain voltage Vds is 0.
- the unit drain current is extremely small (for example, 1 ⁇ 10 ⁇ 14 A / ⁇ m or less). This is substantially in the off state.
- the drain current Ids increases as the gate voltage Vgs increases (FIG. 14A). Further, the drain current Ids increases with the increase of the drain voltage Vds (FIG. 14B).
- a write operation was performed on the memory transistor 10A in such an initial state (also referred to as a semiconductor state), and the electrical characteristics after the write were examined.
- Writing is performed by applying a predetermined gate voltage Vgs and drain voltage Vds to the memory transistor 10A and flowing a large drain current through the channel region 7cA. Due to the drain current, Joule heat is locally generated in the metal oxide layer 7A, and the electrical resistance of the channel region 7cA can be reduced.
- the gate voltage Vgs at the time of writing is set to a voltage higher than the range of the gate voltage applied to the circuit transistor by circuit operation, for example.
- writing was performed by applying a drain voltage Vds: 24 V and a gate voltage Vgs: 30 V to the memory transistor 10A.
- the writing time (drain current Ids energization time) was set to 100 milliseconds.
- FIG. 15B is a diagram showing the Ids-Vds characteristics when Vgs is changed from 0 to 7V every 1V after the write operation of the memory transistor 10A.
- FIG. A line R1 represents an Ids-Vds characteristic before writing
- a line T1 represents an Ids-Vds characteristic after writing.
- FIG. 17 is a diagram showing superimposed Ids-Vgs characteristics of the memory transistor 10A before and after writing.
- Lines T2 and T3 represent the Ids-Vgs characteristics before writing when Vds is 0.1 V and 10 V, respectively.
- Lines R2 and R3 represent the Ids-Vgs characteristics after writing when Vds is 0.1 V and 10 V, respectively.
- FIG. 18 is a diagram showing the relationship between the differential resistance (dVds / dIds, unit: ⁇ m) obtained from the Ids-Vds characteristics of the memory transistor 10A before and after writing and the drain voltage Vds.
- Lines T4 and T5 represent the relationship between dVds / dIds and Vds before writing when the gate voltage Vgs is 0V and 7V, respectively.
- Lines R4 and R5 represent the relationship between dVds / dIds and Vds after writing when the gate voltage Vgs is 0V and 7V, respectively.
- the drain current Ids changes depending greatly on the gate voltage Vgs.
- the gate voltage Vgs is within a specific voltage range (for example, about 0.5 V or less)
- the drain current Ids hardly flows and is substantially in an off state.
- the unit drain current is 1 ⁇ 10 ⁇ 11 A / ⁇ m or more when the drain voltage is in the range of 0.1 V to 10 V, for example.
- the absolute value of the drain current Ids / W1 per unit channel width is, for example, 1 ⁇ 10 10 within a range where the absolute value of the drain voltage is 0.1 V or more and 10 V or less.
- the drain current Ids / W1 per unit channel width is obtained even when the absolute value of the drain voltage is in the range of 0.1 V to 10 V, and the gate voltage is set within the above voltage range.
- the absolute value of becomes a current state of, for example, 1 ⁇ 10 ⁇ 11 A / ⁇ m or more according to the drain voltage.
- the differential resistance dVds / dIds in the initial state varies with the gate voltage Vgs.
- the differential resistance dVds / dIds after writing does not change with the gate voltage Vgs.
- the write operation of the memory transistor 10A is performed by allowing a high current density drain current Ids to flow through the channel region 7cA for a fixed write time.
- the high current density drain current Ids flows in a bias state higher than the voltage range of the gate voltage Vgs and the drain voltage Vds applied to the memory transistor 10A in the circuit operation other than the write operation.
- Joule heat and electromigration are generated in the channel region 7cA. Thereby, it is considered that the composition of the metal oxide constituting the channel region 7c (metal oxide layer 7) is changed to induce a reduction in resistance.
- the unit drain current (unit: A / ⁇ m) is proportional to the current density of the drain current (unit: A / m 2 ). Increasing the unit drain current (unit: A / ⁇ m) increases the current density (unit: A / m 2 ) of the drain current.
- the unit drain current during the write operation is set to, for example, about 1 ⁇ A / ⁇ m to 1 mA / ⁇ m, and the write time is set to, for example, about 10 ⁇ sec to 100 seconds.
- the gate voltage Vgs at the time of writing is set to, for example, greater than 0V and 200V or less, preferably 20V or more and 100V or less.
- the drain voltage Vds at the time of writing is set to, for example, greater than 0V and 200V or less, preferably 20V or more and 100V or less.
- the voltages Vgs and Vds at the time of writing are not limited to the above ranges, and can be set as appropriate so that a desired unit drain current flows.
- the unit drain current and the write time during the write operation are not limited to the above numerical range.
- the unit drain current and the writing time can vary depending on the type and thickness of the metal oxide semiconductor used for the metal oxide layer 7A, the element structure of the memory transistor 10A, and the like.
- the electrical characteristics of the memory transistor 10A change more easily as the Joule heat generated in the memory transistor 10A increases. For example, when the unit drain current Ids at the time of writing is increased, larger Joule heat can be generated.
- FIG. 19 shows an example of the relationship between the write time (unit: msec) and the unit drain current (unit: A / ⁇ m). From FIG. 19, it can be seen that the greater the unit drain current, the greater the Joule heat and the shorter the write time.
- the unit drain current at the time of writing can be increased by increasing the gate voltage Vgs at the time of writing or increasing the capacity of the gate insulating film 5.
- the gate voltage Vgs at the time of writing is set to a value lower than the dielectric breakdown voltage of the gate insulating film 5. Therefore, in order to further increase the gate voltage Vgs at the time of writing, it is preferable to increase the dielectric breakdown voltage of the gate insulating film 5.
- the gate insulating film 5 is made of a material having a high relative dielectric constant to increase the electric capacity.
- the insulating material having a high relative dielectric constant for example, a silicon nitride film (SiN) or a silicon oxynitride film (SiNO) may be used. These relative dielectric constants are higher than the relative dielectric constant of the silicon oxide film (SiO 2 ).
- the electric field strength applied to the gate insulating film 5 may be kept low by increasing the thickness of the gate insulating film 5. Thereby, the dielectric breakdown voltage of the gate insulating film 5 can be reduced.
- a silicon nitride film (SiN) or a silicon nitride oxide film (SiON) contains hydrogen. Therefore, when the SiN film or the SiON film is in contact with the metal oxide layer that is the metal oxide layer 7A, hydrogen reacts with oxygen of the oxide semiconductor, so that the metal oxide layer 7A can approach the conductor. There is sex.
- metal oxide layer 7A and the silicon nitride film (SiN) or silicon oxynitride film and (SiNO) does not directly contact, between these, a lower silicon oxide film having a hydrogen concentration in the film (SiO 2) or A silicon nitride oxide film (SiON) may be inserted.
- the memory transistor of this embodiment has a structure that easily generates Joule heat or a structure that hardly diffuses the generated Joule heat, higher write characteristics can be realized.
- Joule heat can be used more efficiently and writing time can be further shortened.
- the planar shape of the channel region is, for example, U-shaped, the time required for writing can be shortened compared to a rectangle.
- FIG. 20 is a diagram showing the relationship between the planar shape of the channel region and the writing time.
- Vgs Vds
- Vds Vds
- the vertical axis represents the write time.
- the writing time was examined for a memory transistor in which the planar shape of the channel region is rectangular and a memory transistor in which the planar shape of the channel region is U-shaped.
- the channel width and channel length of these memory transistors are equal, and the configuration other than the planar shape of the channel region (the thickness of the active layer, the material and thickness of the gate insulating film, etc.) is also the same.
- the Joule heat generated by the write current can be used for writing more efficiently than in the rectangular case.
- the reason is considered as follows.
- the U-shaped channel region is formed, one of the drain electrode and the source electrode is surrounded by the other when viewed from the normal direction of the substrate. For this reason, the current density is increased on the enclosed electrode side, and a larger Joule heat is generated than on the other electrode side. As a result, the resistance of the oxide semiconductor is reduced by Joule heat, and the writing operation is promoted.
- the surrounded electrode is the drain electrode, that is, if the source electrode is arranged outside the U shape of the channel region and the drain electrode is arranged inside the U shape, the amount of heat generated on the drain side of the metal oxide layer can be increased.
- the writing speed can be further increased. Therefore, when the electrode structure of this embodiment is applied to a memory transistor having a U-shaped channel region, a more remarkable effect can be obtained.
- the planar shape of the channel region is not limited to a U-shape, and the same effect is exhibited as long as the channel region has a shape that locally increases the current density.
- another gate electrode 18 may be provided on the opposite side of the metal oxide layer 7 from the gate electrode 3.
- FIGS. 21A and 21B are a plan view and a cross-sectional view illustrating the configuration of another memory transistor according to this embodiment.
- an upper gate electrode 18 is provided above the metal oxide layer 7 via an interlayer insulating layer (here, the passivation film 11 and the organic insulating film 13).
- the upper gate electrode 18 is disposed so as to overlap at least the channel region 7 c of the metal oxide layer 7 when viewed from the normal direction of the substrate 1.
- the upper gate electrode 18 may be, for example, a transparent electrode formed from a transparent conductive film common to the pixel electrode.
- the upper gate electrode 18 and the gate electrode (gate wiring) 3 on the substrate 1 side of the metal oxide layer 7 may be connected via a contact hole CH.
- the other gate electrode 18 and the gate electrode 3 become the same potential, the drain current Ids can be further increased by the back gate effect.
- the upper gate electrode 18 is shown as a transparent electrode, but it need not be a transparent electrode.
- the planar shape of the channel region 7c is U-shaped, but may be rectangular or other shapes.
- the memory transistor of this embodiment may have an etch stop structure in which an etch stop layer is provided so as to be in contact with the surface of the channel region 7c, as will be described later.
- the metal oxide layer 7 may be formed on the source and drain electrodes, and the bottom surface of the metal oxide layer 7 may be arranged so as to be in contact with these electrodes.
- the semiconductor device of this embodiment is different from the semiconductor device of the first embodiment in that a memory transistor having a protective layer as an etch stop is provided on a metal oxide layer.
- Other configurations are the same.
- FIGS. 22A and 22B are a plan view and a cross-sectional view showing an example of the configuration of the memory transistor 10C in the second embodiment, respectively.
- the cross section shown in FIG. 22B is a cross section taken along the line A-A ′ shown in FIG.
- the same components as those in FIG. 1 are denoted by the same reference numerals, and the description thereof is omitted.
- the memory transistor 10C has a protective layer 31 formed between the metal oxide layer 7 and the source wiring layer.
- the protective layer 31 is in contact with at least the channel region 7 c of the metal oxide layer 7.
- a portion of the protective layer 31 that is in contact with the channel region 7c is referred to as a channel protective layer 31c.
- the width of the metal oxide layer 7 in the channel direction is larger than the width of the gate electrode 3 in the channel direction.
- the protective layer 31 is provided so as to cover the metal oxide layer 7.
- the protective layer 31 is provided with openings 32 s and 32 d that expose regions located on both sides of the channel region 7 c in the metal oxide layer 7.
- the source electrode 9s and the drain electrode 9d are formed on the protective layer 31 and in the openings 32s and 32d, respectively, and are in contact with the metal oxide layer 7 in the openings 32s and 32d.
- a region in contact with the source electrode 9 s becomes a source contact region
- a region in contact with the drain electrode 9 d becomes a drain contact region.
- the portion of the drain electrode 9d that overlaps both the metal oxide layer 7 and the gate electrode 3 when viewed from the normal direction of the substrate 1 is the first drain. It is composed of the metal layer 9d1 and does not include the second drain metal layer 9d2. For example, as shown in the drawing, only the first drain metal layer 9d1 is disposed in the opening 32d, and the second drain metal layer 9d2 may not be disposed. Thereby, the effect similar to 1st Embodiment is acquired.
- the structure of the source electrode 9s is not particularly limited. For example, both the first and second source metal layers 9s1 and 9s2 are arranged in the opening 32s, and the metal oxide is viewed from the normal direction of the substrate 1. It may overlap with both the layer 7 and the gate electrode 3.
- the planar shape of the channel region 7 c is rectangular, but it may be U-shaped as shown in FIG.
- 23 to 28 are process diagrams for explaining an example of the manufacturing method of the active matrix substrate 1003, in which (a) and (b) are cross-sectional views and (c) is a top view.
- a process of forming the memory transistor 10C, the capacitor section 20, the gate / source contact section 30 and the gate / source intersection section 40 in the active matrix substrate 1003 is shown.
- a gate conductive film is formed on the substrate 1 and patterned to form a gate connection portion 3sg, a gate wiring G, a gate electrode 3C, and a capacitor wiring.
- a gate wiring layer including CS is formed.
- a gate insulating film 5 is formed so as to cover the gate wiring layer.
- an oxide semiconductor film is formed on the gate insulating film 5 and patterned to form a metal oxide layer 7C in the memory transistor formation region R (10C).
- the semiconductor layer 7cs is formed so as to overlap the capacitor portion formation region R (20) with the capacitor wiring CS and the gate insulating film 5 interposed therebetween. This is different from the above-described embodiment in that the semiconductor layer 7cs is left in the capacitor portion formation region R (20).
- the material, thickness, and formation method of each layer are the same as the material, thickness, and formation method of each layer described in the first embodiment.
- an insulating protective film is formed on the gate insulating film 5, the metal oxide layer 7C, and the semiconductor layer 7cs, and the protective layer 31 is formed by patterning the insulating protective film. obtain.
- the protective layer 31 is provided at least on a region to be a channel region of the metal oxide layer 7C. A portion of the protective layer 31 located on the channel region is referred to as a channel protective layer 31c.
- the gate insulating film 5 below the insulating protective film is also etched.
- the metal oxide layer 7C and the semiconductor layer 7cs function by etching stop, portions of the gate insulating film 5 covered with these layers are not removed.
- an opening 33 exposing the gate connection portion 3sg is formed in the protective layer 31 and the gate insulating film 5 by patterning.
- an opening 34 exposing the semiconductor layer 7cs is formed in the protective layer 31.
- openings 32s and 32d exposing the metal oxide layer 7C are formed on both sides of the portion of the metal oxide layer 7C that becomes the channel region 7cC, respectively.
- the insulating protective film is formed by, for example, a plasma CVD method or a sputtering method, and can be patterned by a known dry etching method. After the insulating protective film is formed, for example, annealing is performed in an air atmosphere at a temperature of 200 to 450 ° C. for about 30 minutes to 4 hours.
- a silicon oxide film (SiO 2 ), a silicon nitride film (SiN), a silicon oxynitride film (SiNO), a silicon nitride oxide film (SiON), aluminum oxide (Al 2 O 3 ), tantalum oxide ( A single layer selected from Ta 2 O 5 ) or a laminated film of two or more layers can be used.
- a SiO 2 film having a thickness of 10 nm to 500 nm is used as an example.
- a source conductive film is formed on the protective layer 31 and in the opening of the protective layer 31, and the first patterning is performed.
- the source conductive film a laminated film having the first metal film 9L as a lower layer and the second metal film 9U as an upper layer is formed.
- the materials of the first metal film 9L and the second metal film 9L are the same as those described above with reference to FIG.
- a Ti film thickness: 10 to 100 nm
- an Al film thickness: 50 to 400 nm
- a source conductive film having a two-layer structure of Ti film-Al film is obtained.
- the first patterning is performed, for example, by wet etching.
- the wet etching is performed under the condition that only the second metal film 9U is etched and the first metal film 9L is not etched.
- an opening is formed in the second metal film 9U on a part of the metal oxide layer 7C of the memory transistor 10C.
- the opening is provided on a portion including the entire region serving as the drain contact region and a part of the region serving as the channel region in the metal oxide layer 7C. In the opening, the first metal film 9L is exposed.
- a second patterning is performed on the source conductive film.
- the second metal film 9U is removed by wet etching using the resist layer M as a mask, and then the first metal film 9L is removed by dry etching.
- portions of the first and second metal films 9L and 9U located on the region to be the channel region of the metal oxide layer 7C are removed (source-drain separation).
- the source connection 9sC and the drain electrode 9dC are connected to the memory transistor formation region R (10C), and the source connection is made to the gate / source contact portion formation region R (30).
- the source line S is formed in the portion 9sg, the gate / source intersection forming region R (40), and the capacitor electrode 9cs is formed in the capacitor portion forming region R (20).
- a layer including these wirings and electrodes formed from the source conductive film is referred to as a “source wiring layer”.
- the second metal film 9U is patterned by wet etching
- the end of the second metal film 9U in the source wiring layer is more than the end of the resist layer M when viewed from the normal direction of the substrate 1. Is also located inside.
- the first metal film 9L is patterned by dry etching, when viewed from the normal direction of the substrate 1, the end of the first metal film 9L and the end of the resist layer M are aligned. Accordingly, when the source wiring layer is viewed from the normal direction of the substrate 1, the second metal film 9U is located inside the outline of the first metal film 9L. In the cross-sectional view, the end of the second metal film 9U is located on the first metal film 9L.
- the second metal film 9U on the region serving as the drain contact region is removed by the first patterning, only the first metal film 9L remains on the drain contact region of the metal oxide layer 7C.
- a region of the metal oxide layer 7C that overlaps with the corresponding gate electrode 3C and is located between the source electrode 9sC and the drain electrode 9dC is a channel region 7cC.
- the source electrode 9sC and the drain electrode 9dC are arranged so that the channel region 7cA is rectangular when viewed from the normal direction of the substrate 1.
- the memory transistor 10C is formed.
- the portion of the drain electrode 9d that overlaps both the metal oxide layer 7C and the gate electrode C is composed of only the first metal film 9L, and the second metal film 9U.
- a portion of the source electrode 9sC that overlaps both the metal oxide layer 7C and the gate electrode 3C has a laminated structure including the first metal film 9L and the second metal film 9U.
- the gate / source contact formation region R (30) the source connection portion 9sg in contact with the gate connection portion 3sg in the opening 33 is obtained. Further, the source wiring S is formed in the gate / source intersection forming region R (40). In the capacitor portion formation region R (20), the capacitor electrode 9cs in contact with the semiconductor layer 7cs in the opening 34 is formed. In this manner, the gate / source contact portion formation region R (30) has the gate / source contact portion 30, the gate / source intersection formation region R (40) has the gate / source intersection 40, and the capacitance portion formation region R (20). ) And the memory transistor 10A, 10B are formed in the capacitor portion 20 and the memory transistor formation region R (10A, 10B).
- the pixel transistor 10T (see FIGS. 5A and 5B) can also be formed by a process common to the memory transistor 10C.
- the second metal film 9U of the drain electrode may be disposed also on the metal oxide layer 7.
- a protective layer (passivation film) 11, an organic insulating film 13 such as a photosensitive resin, and an upper conductive layer 17 are formed.
- the protective film 11 and the organic insulating film 13 are formed in this order by a method similar to the method described in the first embodiment.
- an opening is formed in a portion of the organic insulating film 13 located on the gate / source contact portion formation region R (30).
- the passivation film 11 is etched using the organic insulating film 13 as a mask. Thereby, the contact hole 15 exposing the surface of the source connection portion 9sg is obtained.
- a conductive film is formed in the contact hole 15 and on the organic insulating film 13 and patterned.
- the upper conductive layer 17 in contact with the source connection portion 9sg in the contact hole 15 is obtained in the gate / source contact portion formation region R (30).
- the materials, thicknesses, and forming methods of the protective film 11, the organic insulating film 13, and the conductive film are the same as those described in the first embodiment. In this way, an active matrix substrate 1003 is obtained.
- the memory transistor 10C of this embodiment has an etch stop layer (etch stop structure), the memory transistor 10C has the following advantages as compared with the case without an etch stop layer (channel etch structure).
- the etching process of the source conductive film for source / drain separation is performed in a state where the channel region 7cC is covered with the channel protective layer 31c. Therefore, damage to the channel region 7cC due to etching can be reduced as compared with a thin film transistor having a channel etch structure. Therefore, variation in electrical characteristics of the memory transistor 10C can be improved. In addition, the amount of variation in electrical characteristics due to electrical stress can be reduced. Furthermore, in the gate / source contact portion 30, the gate connection portion 3sg and the source connection portion 9sg can be directly contacted. Therefore, since the size of the gate / source contact portion 30 can be reduced, the circuit area can be reduced.
- the semiconductor device of this embodiment is different from the semiconductor device of the first embodiment in that it has a bottom contact structure memory transistor 10D having active layers on the source and drain electrodes. Other configurations are the same.
- FIGS. 29A and 29B are a plan view and a cross-sectional view, respectively, showing an example of the configuration of the memory transistor 10D in the third embodiment.
- the cross section shown in FIG. 29B is a cross section along the line A-A ′ shown in FIG.
- the same components as those in FIG. 1 are denoted by the same reference numerals, and description thereof is omitted.
- a source electrode 9s and a drain electrode 9d are provided separately on a gate insulating film 5 covering the gate electrode 3, and a metal oxide layer 7 is formed thereon.
- the metal oxide layer 7 is disposed so as to be in contact with the gate insulating film 5 located between the source electrode 9s and the drain electrode 9d, and the upper and side surfaces of the source electrode 9s and the drain electrode 9d.
- a portion of the metal oxide layer 7 that overlaps with the gate electrode 3 and is located between the source electrode 9 s and the drain electrode 9 d becomes a channel region 7 c.
- the planar shape of the channel region 7c is rectangular, but it may be U-shaped as shown in FIG.
- the portion of the drain electrode 9 d that overlaps both the metal oxide layer 7 and the gate electrode 3 is composed of the first drain metal layer 9 d 1.
- the drain metal layer 9d2 is not included.
- a portion overlapping both the metal oxide layer 7 and the gate electrode 3 includes the first and second source metal layers 9s1 and 9s2. With such a configuration, the same effect as in the first embodiment can be obtained.
- the first drain metal layer 9d1, the first source metal layer 9s1, and the second source metal layer 9s2 may be in contact with the lower surface of the metal oxide layer 7 (bottom contact structure).
- the second drain metal layer 9d2 is preferably not in contact with the lower surface of the metal oxide layer 7.
- FIGS. 30 to 34 are process diagrams for explaining an example of the manufacturing method of the active matrix substrate, in which (a) and (b) are cross-sectional views, and (c) is a top view.
- a process of forming the memory transistors 10D and 10E, the capacitor section 20, the gate / source contact section 30 and the gate / source intersection section 40 in the active matrix substrate is shown.
- the active matrix substrate of the present embodiment only needs to include one of the two types of memory transistors 10D and 10E, and may not include both.
- a gate conductive film is formed on the substrate 1 and patterned to form a gate connection portion 3sg, a gate wiring G, gate electrodes 3D and 3E, and A gate wiring layer including the capacitor wiring CS is formed. Thereafter, a gate insulating film 5 is formed so as to cover the gate wiring layer.
- a laminated film having the first metal film 9L as a lower layer and the second metal film 9U as an upper layer is formed, and the first patterning is performed.
- the materials of the first metal film 9L and the second metal film 9U are the same as those described above with reference to FIG.
- a Ti film thickness: 10 to 100 nm
- an Al film thickness: 50 to 400 nm
- a source conductive film having a two-layer structure of Ti film-Al film is obtained.
- the first patterning is performed, for example, by wet etching.
- the wet etching is performed under the condition that only the second metal film 9U is etched and the first metal film 9L is not etched.
- an opening is formed in a portion of the second metal film 9U located above the gate electrodes 3D and 3E.
- the opening is arranged so as to correspond to a portion including the entire region to be a drain contact region and a part of the region to be a channel region of a metal oxide layer formed in a later step. In the opening, the first metal film 9L is exposed.
- a resist layer M having openings on the gate electrodes 3D and 3E of the memory transistors 10D and 10E is formed on the source conductive film.
- the second patterning is performed on the source conductive film.
- the second metal film 9U is removed by wet etching using the resist layer M as a mask, and then the first metal film 9L is removed by dry etching.
- the source electrodes 9sA and 9sB and the drain electrodes 9dA and 9dB that are spaced apart from the source conductive film are formed (source ⁇ Drain isolation).
- the source connection portion 9sg is formed in the gate / source contact portion formation region R (30), the source wiring S is formed in the gate / source intersection formation region R (40), and the capacitance electrode 9cs is formed in the capacitance portion formation region R (20).
- the A layer including these wirings and electrodes formed from the source conductive film is referred to as a “source wiring layer”.
- an oxide semiconductor film is formed on the gate insulating film 5 and the source wiring layer and patterned.
- the metal oxide layers 7D and 7E are formed in the memory transistor formation regions R (10D) and R (10E), respectively.
- the material, thickness, and formation method of the oxide semiconductor film are the same as the material, thickness, and formation method of the above-described embodiment.
- the metal oxide layers 7D and 7E are in contact with the gate insulating film 5 located between the source electrodes 9sA and 7sB and the drain electrodes 9dA and 7dB, respectively, and the upper surfaces of the source electrodes 9sA and 7sB and the drain electrodes 9dA and 7dB, respectively. And arranged to contact the side surface.
- the metal oxide layer 7D is patterned so as to be in contact with the first drain metal layer 9d1D of the drain electrode 9dD and not in contact with the second drain metal layer 9d2D.
- the source electrode 9sD may be in contact with the second source metal layer 9s2D. The same applies to the metal oxide layer 7E.
- the portions of the drain electrodes 9dD and 9dE that overlap with both the gate electrodes 3D and 3E and the metal oxide layers 7D and 7E have the second drain metal layers 9d2D and 9d2E. Since it is not included, the same effect as the above-described embodiment can be obtained. In this way, the memory transistors 10D and 10E are formed.
- the metal oxide layers 7D and 7E are formed after the etching process of the source conductive film, damage to the metal oxide layers 7D and 7E due to the etching process can be suppressed.
- a protective film (passivation film) 11 and an organic insulating film such as a photosensitive resin are formed on the source wiring layer and the metal oxide layers 7D and 7E. 13 and the upper conductive layer 17 are formed.
- the protective film 11 and the organic insulating film 13 are formed in this order by the same method as in the above-described embodiment, and a portion of the organic insulating film 13 located on the gate / source contact portion forming region R (30) is formed. An opening is formed.
- the passivation film 11 is etched using the organic insulating film 13 as a mask.
- the contact hole 15 exposing the surfaces of the gate connection portion 3sg and the source connection portion 9sg is obtained.
- a conductive film is formed in the contact hole 15 and on the organic insulating film 13 and patterned.
- the upper conductive layer 17 that electrically connects the source connection portion 9sg in the contact hole 15 is obtained.
- the material, thickness, and formation method of the protective film 11, the organic insulating film 13, and the conductive film are the same as the material, thickness, and formation method of the above-described embodiment. In this way, an active matrix substrate 1004 is obtained.
- the memory transistors 10D and 10E according to the present embodiment have a bottom contact structure configured to be in contact with the source and drain electrodes on the lower surfaces of the active layers 7A and 7B.
- Such a structure has the following advantages over the case of having a channel etch structure.
- the metal oxide layers 7D and 7E are formed after the etching process of the source conductive film for source / drain separation is performed. Therefore, damage to the channel regions 7cD and 7cE due to etching can be reduced as compared with a thin film transistor having a channel etch structure. Therefore, variation in the electrical characteristics of the memory transistors 10D and 10E can be improved. In addition, the amount of variation in electrical characteristics due to electrical stress can be reduced.
- the manufacturing process is simplified as compared with the case of having the etch stop structure of the second embodiment. For this reason, there are advantages that the manufacturing cost can be reduced and the yield can be improved.
- the operation and electrical characteristics of the memory transistors 10C to 10E in the second and third embodiments are the same as those described in the first embodiment. Further, as in the first embodiment, these embodiments are not limited to the active matrix substrate, and can be widely applied to electronic devices including a memory circuit such as an integrated circuit.
- the bottom gate type thin film transistor is used as the memory transistors 10A to 10E.
- a top gate type thin film transistor may be used.
- FIG. 36B and 36C are cross-sectional views illustrating the configuration of a top-gate memory transistor, respectively.
- the example shown in FIG. 36B has the same configuration as that of the memory transistors 10D and 10E shown in FIG. 34 except that the gate electrode 3 is disposed above the metal oxide layer 7.
- the example shown in FIG. 36C has the same configuration as the memory transistor shown in FIG. 36A except that the stacking order of the first metal film 9L and the second metal film 9U is changed. ing.
- the write operation to the memory transistor 10A is performed by Joule heat generated in the metal oxide layer 7A.
- the temperature of the channel region 7cA during the write operation is, for example, 200 ° C. or higher.
- On the drain side of the channel region 7cA it may be higher (for example, 250 ° C. or higher, or 300 ° C. or higher). Therefore, a layer (for example, an organic insulating film) made of a material having low heat resistance (softening temperature: less than 200 ° C., preferably less than 300 ° C.) is not disposed above the metal oxide layer 7A of the memory transistor 10A. Is preferred.
- the active matrix substrate will be described in detail as an example.
- the memory transistors 10A to 10E are covered with the passivation film 11 and the organic insulating film 13. If the heat resistance of the organic insulating film 13 is low, the portion of the organic insulating film 13 located on the metal oxide layer may be peeled off from the passivation film 11 or deformed depending on the writing conditions. In particular, peeling or deformation may occur on the end of the organic oxide film 13 on the drain side of the metal oxide layer.
- the organic insulating film 13 is peeled or deformed, for example, when a memory array is configured using a plurality of memory transistors, the written memory transistor RT and the unwritten memory transistor ST are separated from the organic insulating film 13. And there is a risk of being distinguished by the position of deformation.
- an inorganic insulating film having a relatively high heat resistance (such as the silicon oxide films listed above) is provided as the passivation film 11 above the metal oxide layer 7A.
- the organic insulating film 13 may not be formed on the passivation film 11.
- the active matrix substrate illustrated in FIGS. 35A to 35C does not need to have an organic insulating film as a planarization film.
- the organic insulating film 13 may be provided only in a partial region of the substrate 1.
- the organic insulating film 13 may not be formed at least above the metal oxide layers 7A, 7C, and 7D of the memory transistors 10A, 10C, and 10D.
- a metal oxide layer of a pixel transistor or a circuit transistor is used.
- An organic insulating film 13 may be formed on the upper side.
- the organic insulating film 13 is formed above the plurality of pixel transistors 10T and may not be formed above the memory transistors 10A in the memory circuit.
- the organic insulating film 13 is provided in the display region 100 and may not be provided in the peripheral region 200 (at least on the memory circuit in the peripheral region 200).
- the active matrix substrates 1002 to 1004 even when a planarizing film made of a material having high heat resistance (for example, softening temperature: 200 ° C. or higher, preferably 300 ° C. or higher) is used instead of the organic insulating film 13, The above-mentioned problem due to heat can be suppressed.
- a planarizing film made of a material having high heat resistance for example, softening temperature: 200 ° C. or higher, preferably 300 ° C. or higher
- an inorganic insulating film such as an inorganic SOG (spin on glass) film may be used as the planarizing film.
- the memory transistors 10A and 10B are thin film transistors, but may be MOS transistors. Even a MOS transistor can be changed to a resistor state by flowing a drain current having a high current density in the channel region.
- a MOS transistor has a configuration in which a metal oxide semiconductor film is disposed on a silicon substrate with an insulating film interposed therebetween. In such a configuration, a silicon substrate with high heat dissipation is used, but since the silicon substrate and the oxide semiconductor film are separated by an insulating film, it is possible to suppress the release of Joule heat due to a write current to the silicon substrate. Therefore, the resistance of the oxide semiconductor film can be reduced by Joule heat.
- each conductive film and each insulating film constituting the memory transistors 10A to 10E are not limited to the contents exemplified in the above embodiments.
- the semiconductor device including the n-channel type memory transistors 10A to 10E has been described as an example.
- the conductivity type of the memory transistor is not limited to the n-channel type, and may be a p-channel type.
- the drain current Ids flows from the source to the drain. Even in the case of a p-channel memory transistor, damage due to heat during writing can be suppressed by applying the electrode structure of the above embodiment.
- the present invention can be widely applied to semiconductor devices and electronic devices having a memory circuit.
- the present invention is applied to non-volatile semiconductor memory devices, integrated circuits (IC, LSI), various display devices such as liquid crystal display devices and organic EL display devices, and active matrix substrates used in various display devices.
- IC integrated circuits
- LSI integrated circuits
- various display devices such as liquid crystal display devices and organic EL display devices
- active matrix substrates used in various display devices.
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Abstract
Description
図1(a)は、本実施形態の半導体装置におけるメモリトランジスタ10Aを示す断面図、図1(b)は、メモリトランジスタ10Aの平面図である。図1(a)は、図1(b)のI-I’線に沿った断面構造を示している。
メモリトランジスタ10Aは、例えば半導体状態(初期状態)を論理値「0」、抵抗体状態を論理値「1」に割り当てることにより、情報を不揮発的に記憶するメモリ回路に用いられ得る。以下、メモリトランジスタ10Aを用いたメモリ回路の構成および動作の一例を説明する。メモリ回路は、1つまたは複数のメモリセルを有している。
ここで、実施例および参考例のメモリトランジスタ10(1)、10(2)を作製し、書き込みによるメモリトランジスタへのダメージを比較した。
本実施形態は、メモリ回路を備えた電子機器に広く適用され得る。本実施形態の半導体装置は、メモリトランジスタ10Aを少なくとも1つ備えていればよく、その用途や構成は限定されない。例えば、不揮発性半導体記憶装置、集積回路(IC、LSI)、液晶表示装置や有機EL表示装置などの各種表示装置、各種表示装置に用いられるアクティブマトリクス基板であってもよい。
本実施形態は、例えば液晶表示装置に用いられるアクティブマトリクス基板に適用され得る。
ここで、図14~図20を参照しながら、メモリトランジスタ10Aの電気的特性を説明する。
メモリトランジスタの書き込み動作時のドレイン電流Idsをさらに大きくするために、金属酸化物層7におけるゲート電極3と反対側に、他のゲート電極18を設けてもよい。
以下、本発明の半導体装置の第2の実施形態を説明する。本実施形態の半導体装置は、金属酸化物層上に、エッチストップとして保護層を有するメモリトランジスタを備える点で、第1の実施形態の半導体装置と異なる。その他の構成は同様である。
以下、本発明の半導体装置の第3の実施形態を説明する。本実施形態の半導体装置は、ソースおよびドレイン電極上に活性層を有するボトムコンタクト構造のメモリトランジスタ10Dを有する点で、第1の実施形態の半導体装置と異なる。その他の構成は同様である。
3 ゲート電極
3sg ゲート接続部
5 ゲート絶縁膜
7 金属酸化物層
7c チャネル領域
9d ドレイン電極
9d1、9d2 ドレイン金属層
9s ソース電極
9s1、9s2 ソース金属層
9L 第1金属膜
9U 第2金属膜
9cs 容量電極
9sg ソース接続部
10A~10E メモリトランジスタ
10T 画素用トランジスタ
11 保護膜(パッシベーション膜)
13 有機絶縁膜
15 コンタクトホール
17 上部導電層
18 上部ゲート電極
19 画素電極
20 容量部
30 ソースコンタクト部
31 保護層
40 ソース交差部
100 表示領域
101 画素
200 周辺領域
201 端子部
1001 半導体装置
1002、1003、1004 アクティブマトリクス基板
CS 容量配線
G ゲート配線
S ソース配線
Claims (16)
- 基板と、前記基板に支持された少なくとも1つのメモリトランジスタとを備えた半導体装置であって、
前記少なくとも1つのメモリトランジスタは、ドレイン電流Idsがゲート電圧Vgに依存する半導体状態から、ドレイン電流Idsがゲート電圧Vgに依存しない抵抗体状態に不可逆的に変化させられ得るメモリトランジスタであり、
前記少なくとも1つのメモリトランジスタは、ゲート電極と、金属酸化物層と、前記ゲート電極と前記金属酸化物層との間に配置されたゲート絶縁膜と、前記金属酸化物層に電気的に接続されたソース電極およびドレイン電極とを有し、
前記ドレイン電極は、融点が1200℃以上である第1の金属で形成された第1ドレイン金属層と、前記第1の金属よりも融点の低い第2の金属で形成された第2ドレイン金属層とを含む積層構造を有し、
前記基板の表面の法線方向から見たとき、前記ドレイン電極の一部は前記金属酸化物層および前記ゲート電極の両方と重なっており、
前記ドレイン電極の前記一部は、前記第1ドレイン金属層を含み、且つ、前記第2ドレイン金属層を含まない半導体装置。 - 前記ソース電極は、前記第1の金属を含む第1ソース金属層と、前記第2の金属を含む第2ソース金属層とを含む積層構造を有し、
前記基板の表面の法線方向から見たとき、前記ソース電極の一部は前記金属酸化物層および前記ゲート電極の両方と重なっており、前記ソース電極の前記一部は、前記第1ソース金属層および前記第2ソース金属層を含む請求項1に記載の半導体装置。 - 前記ソース電極は、前記第1の金属を含む第1ソース金属層と、前記第2の金属を含む第2ソース金属層とを含む積層構造を有し、
前記基板の表面の法線方向から見たとき、前記ソース電極の一部は前記金属酸化物層および前記ゲート電極の両方と重なっており、前記ソース電極の前記一部は、前記第1ソース金属層を含み、且つ、前記第2ソース金属層を含まない請求項1に記載の半導体装置。 - 前記第1ドレイン金属層は、前記金属酸化物層の上面と直接接している請求項1から3のいずれかに記載の半導体装置。
- 前記第1ドレイン金属層は、前記金属酸化物層の下面と直接接している請求項1から3のいずれかに記載の半導体装置。
- 前記ゲート電極は、前記金属酸化物層の前記基板側に位置している請求項1から5のいずれかに記載の半導体装置。
- 前記第1ドレイン金属層および前記第2ドレイン金属層は、前記基板側からこの順で積層されている請求項1から6のいずれかに記載の半導体装置。
- 前記基板の法線方向から見たとき、前記金属酸化物層のうち、前記ゲート電極と前記ゲート絶縁膜を介して重なり、かつ、前記ソース電極と前記ドレイン電極との間に位置する部分は、U字形状を有している請求項1から7のいずれかに記載の半導体装置。
- 前記第1の金属は、W、Ta、Ti、MoおよびCrからなる群から選択される金属またはその合金である請求項1から8のいずれかに記載の半導体装置。
- 前記第2の金属の融点は1200℃未満である請求項1から9のいずれかに記載の半導体装置。
- 前記第2の金属は、AlおよびCuからなる群から選択される金属である請求項1から9のいずれかに記載の半導体装置。
- 前記金属酸化物層は、In、GaおよびZnを含む請求項1から11のいずれかに記載の半導体装置。
- 前記金属酸化物層は結晶質部分を含む請求項12に記載の半導体装置。
- 前記少なくとも1つのメモリトランジスタは、前記半導体状態であるメモリトランジスタSTと、前記抵抗体状態であるメモリトランジスタRTとを含む複数のメモリトランジスタである請求項1から13のいずれかに記載の半導体装置。
- 前記基板に支持された、金属酸化物を含む半導体層を有する他のトランジスタをさらに備え、
前記他のトランジスタの前記半導体層と、前記メモリトランジスタの前記金属酸化物層とは、共通の酸化物半導体膜から形成されており、
前記他のトランジスタのソース電極およびドレイン電極は、前記第1の金属を含む第1金属層と、前記第2の金属を含む第2金属層とを含む積層構造を有し、
前記基板の表面の法線方向から見たとき、前記他のトランジスタのドレイン電極の一部は、前記他のトランジスタのゲート電極および前記金属酸化物層の両方と重なっており、前記他のトランジスタのドレイン電極の前記一部は、前記第1金属層および前記第2金属層を含む請求項1から11のいずれかに記載の半導体装置。 - 前記半導体装置は、アクティブマトリクス基板であり、
複数の画素電極と、それぞれが前記複数の画素電極のうち対応する画素電極に電気的に接続された画素トランジスタとを有する表示領域、および、
前記表示領域以外の領域に配置された、複数の回路を有する周辺領域
を備え、
前記複数の回路は、前記少なくとも1つのメモリトランジスタを有するメモリ回路を含み、
前記画素トランジスタ、および、前記周辺領域において前記複数の回路を構成する複数のトランジスタの少なくとも1つは、前記少なくとも1つのメモリトランジスタの前記金属酸化物層と共通の酸化物半導体膜を用いて形成された半導体層を有する請求項1から15のいずれかに記載の半導体装置。
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