CN108630677A - 一种功率器件版图结构及制作方法 - Google Patents

一种功率器件版图结构及制作方法 Download PDF

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CN108630677A
CN108630677A CN201710163549.6A CN201710163549A CN108630677A CN 108630677 A CN108630677 A CN 108630677A CN 201710163549 A CN201710163549 A CN 201710163549A CN 108630677 A CN108630677 A CN 108630677A
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朱明皓
李瑞钢
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Haike Jiaxing Electric Power Technology Co ltd
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41758—Source or drain electrodes for field effect devices for lateral devices with structured layout for source or drain region, i.e. the source or drain region having cellular, interdigitated or ring structure or being curved or angular
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3736—Metallic materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
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    • H—ELECTRICITY
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    • H01L29/76—Unipolar devices, e.g. field effect transistors
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    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

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Abstract

本发明公开了一种功率器件版图结构及制作方法，包括栅极电极，位于栅极电极下端的叉指栅极，位于叉指栅极下端的漏极和布置于栅极电极与漏极之间区域的叉指源极，布于叉指源极处的通孔，各部件之间通过电学连接；其中，栅极电极用于信号的输入；漏极用于被器件放大后的输入信号的流出；叉指栅极用于电流的传导，器件内的电流会流入各个叉指源极；叉指源极的电流通过插入通孔直接流入衬底接地，形成电流通路。本发明减小功率器件源极对地阻抗，均匀器件电流，改善器件的导热率，减小了器件面积，提高了器件的功率密度。

Description

一种功率器件版图结构及制作方法
技术领域
本发明涉及集成电路芯片领域，具体设计一种功率器件版图结构及制作方法。
背景技术
功率半导体器件具有开关速度快、损耗小、输入阻抗高、驱动功率小等优点，被广泛地应用于包括计算机领域、网络通信领域、消费电子领域、工业控制领域等几乎所有领域的电子制造业。
但随着半导体功率器件尺寸的逐渐缩小，工作电压和工作电流不断提高，功率器件的功率密度渐渐达到极限。面对日益提高的大功率器件的需求，传统功率器件只能一味的增加面积，这既增加了芯片的成本，也增加了芯片封装的难度。
传统半导体功率器件版图，如图1所示，源极电极需要插入通孔，导致电极面积过大；源极栅极设计为交叉走线，因而需要金属跳线，既增加了器件的复杂度，也占了相当大的芯片面积；且散热只靠器件自身材料传导。而面积和散热是制约芯片功率密度提高的两大因素。
发明内容
针对上述问题，本发明提供一种功率器件版图及其制作方法，其取消了源极电极，金属跳线，且将通孔布于叉指源极处，既减小了芯片面积，也提高了芯片散热能力。
本发明所采用的技术方案为：
一种功率器件版图结构，其特征在于，包括栅极电极，位于栅极电极下端的叉指栅极，位于叉指栅极下端的漏极和布置于栅极电极与漏极之间区域的叉指源极，布于叉指源极处的通孔，各部件之间通过电学连接；其中，栅极电极用于信号的输入；漏极用于被器件放大后的输入信号的流出；叉指栅极用于电流的传导，器件内的电流会流入各个叉指源极；叉指源极的电流通过插入通孔直接流入衬底接地，形成电流通路。
进一步地，通孔中以良导热金属填充。
进一步地，良导热金属为钨铜合金。
实现上述方案的具体实施步骤为：
(1)生长衬底及外延层，平整表面；
(2)在叉指栅极与栅极电极处淀积栅极金属并覆盖氧化层；
(3)在叉指源极和叉指漏极处淀积金属并覆盖钝化层；
(4)在叉指源极处插入通孔并填充金属；
(5)在栅极电极处与漏极处开窗，露出金属用于外接引线。
进一步地，步骤(4)中的通孔可为激光打孔或蚀刻成孔。
进一步地，通孔中填充的金属为良导热金属。
本发明具有如下优点或有益效果：取消了源极电极，不再需要金属跳线，减小功率器件源极对地阻抗和芯片的冗余面积；将通孔布于叉指源极处，既减小了芯片面积，也提高了芯片散热能力，进而提高了器件的功率密度。
附图说明
图1是传统的功率器件版图结构示意图。
图2是本发明的方法形成的功率器件版图结构示意图。
图中数字所表示的相应部件名称：
101.栅极电极 102.叉指栅极 103.漏极 104.叉指源极 105.源极电极 106.通孔107.金属跳线
具体实施方式
为了对本发明的技术特征、目的和有益效果有更加清楚的理解，现对本发明的技术方案进行以下详细说明，但不能理解为对本发明的可实施范围的限定。
图1为传统功率器件版图，包括栅极电极101，叉指栅极102，漏极103，叉指源极104，源极电极105，通孔106，金属跳线107；器件正常工作时，输入信号经由栅极电极101流入各个叉指栅极102；输入信号被器件放大后经由漏极103流出；器件内的电流会流入各个叉指源极104，叉指源极的电流经由源极电极105流向大地，形成电流通路；为了保证源极电极与大地的良好接触，源极电极处需要插入通孔106，使得源极和器件衬底形成良好的互连，减小源极到地阻抗；在器件中，出现源极和栅极交叉走线的地方，需要利用金属跳线107实现互连。
如图2所示，本发明功率器件版图结构包括栅极电极101，位于栅极电极下端的叉指栅极102，位于叉指栅极102下端的漏极103和布置于栅极电极101与漏极103之间区域的叉指源极104，布于叉指源极104处的通孔106，各部件之间通过电学连接；器件正常工作时，输入信号经由栅极电极101流入各个叉指栅极102；输入信号被器件放大后经由漏极103流出；器件内的电流会流入各个叉指源极104，叉指源极的电流通过插入通孔106直接流入衬底接地，形成电流通路；通孔106中以良导热金属(如钨铜合金)填充，可以更好的帮助芯片散热。
上述一种功率器件版图结构的制作方法，具体包括以下步骤：
(1)生长衬底及外延层，平整表面；
(2)在叉指栅极与栅极电极处淀积栅极金属并覆盖氧化层；
(3)在叉指源极和叉指漏极处淀积金属并覆盖钝化层；
(4)在叉指源极处插入通孔并填充金属；
(5)在栅极电极处与漏极处开窗，露出金属用于外接引线。
而步骤(4)中的通孔可为激光打孔或蚀刻成孔；通孔中填充的金属为良导热金属。
至此，本领域技术人员应认识到，虽然本文已详尽示出和描述了本发明的示例性实施例，但是，在不脱离本发明精神和范围的情况下，仍可根据本发明公开的内容直接确定或推导出符合本发明原理的许多其他变型或修改。因此，本发明的范围应被理解和认定为覆盖了所有这些其他变型或修改。

Claims (6)

1.一种功率器件版图结构，其特征在于，包括栅极电极，位于栅极电极下端的叉指栅极，位于叉指栅极下端的漏极和布置于栅极电极与漏极之间区域的叉指源极，布于叉指源极处的通孔，各部件之间通过电学连接；其中，栅极电极用于信号的输入；漏极用于被器件放大后的输入信号的流出；叉指栅极用于电流的传导，器件内的电流会流入各个叉指源极；叉指源极的电流通过插入通孔直接流入衬底接地，形成电流通路。
2.如权利要求1所述的功率器件版图结构，其特征在于，通孔中以良导热金属填充。
3.如权利要求2所述的功率器件版图结构，其特征在于，良导热金属为钨铜合金。
4.一种如权利要求1-3所述的功率器件版图结构的制作方法，其特征在于，该制作方法具体实施步骤为：
(1)生长衬底及外延层，平整表面；
(2)在叉指栅极与栅极电极处淀积栅极金属并覆盖氧化层；
(3)在叉指源极和叉指漏极处淀积金属并覆盖钝化层；
(4)在叉指源极处插入通孔并填充金属；
(5)在栅极电极处与漏极处开窗，露出金属用于外接引线。
5.如权利要求4所述的功率器件版图结构的制作方法，其特征在于，步骤(4)中的通孔可为激光打孔或蚀刻成孔。
6.如权利要求4或5所述的功率器件版图结构的制作方法，其特征在于，通孔中填充的金属为良导热金属。
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