JP2012129503A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP2012129503A JP2012129503A JP2011232666A JP2011232666A JP2012129503A JP 2012129503 A JP2012129503 A JP 2012129503A JP 2011232666 A JP2011232666 A JP 2011232666A JP 2011232666 A JP2011232666 A JP 2011232666A JP 2012129503 A JP2012129503 A JP 2012129503A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 50
- 239000010410 layer Substances 0.000 claims abstract description 221
- 229910052751 metal Inorganic materials 0.000 claims abstract description 106
- 239000002184 metal Substances 0.000 claims abstract description 106
- 230000004888 barrier function Effects 0.000 claims abstract description 103
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 27
- 229920005591 polysilicon Polymers 0.000 claims abstract description 27
- 239000011229 interlayer Substances 0.000 claims abstract description 25
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 14
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 14
- 238000009792 diffusion process Methods 0.000 claims abstract description 8
- 229910008484 TiSi Inorganic materials 0.000 claims description 29
- 239000012535 impurity Substances 0.000 claims description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical group [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 4
- 150000001875 compounds Chemical class 0.000 claims 1
- 238000009413 insulation Methods 0.000 abstract description 5
- 230000007797 corrosion Effects 0.000 abstract description 3
- 238000005260 corrosion Methods 0.000 abstract description 3
- 230000002401 inhibitory effect Effects 0.000 abstract 1
- 239000010936 titanium Substances 0.000 description 49
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 30
- 238000012360 testing method Methods 0.000 description 26
- 230000007423 decrease Effects 0.000 description 9
- 230000000694 effects Effects 0.000 description 7
- 238000001514 detection method Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 6
- 229910021332 silicide Inorganic materials 0.000 description 5
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 5
- 229910010271 silicon carbide Inorganic materials 0.000 description 5
- 238000000137 annealing Methods 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 4
- 230000003247 decreasing effect Effects 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- 229910000789 Aluminium-silicon alloy Inorganic materials 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- PEUPIGGLJVUNEU-UHFFFAOYSA-N nickel silicon Chemical compound [Si].[Ni] PEUPIGGLJVUNEU-UHFFFAOYSA-N 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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Abstract
【解決手段】半導体装置のMOSFETセルは、ポリシリコンのゲート電極6およびn-ドリフト層2の上部に形成されたn+ソース領域4を備える。ゲート電極6上は層間絶縁膜7によって覆われており、Alのソース電極101は、層間絶縁膜7上に延在する。またゲート電極6にはAlのゲートパッド102が接続される。ソース電極101と層間絶縁膜7との間、並びにゲートパッド102とゲート電極6との間のそれぞれに、Alの拡散を抑制するバリアメタル層99が配設される。
【選択図】図2
Description
図1は、本発明の実施の形態1に係る半導体装置を備える半導体チップの上面図である。ここでは半導体装置の一例としてSiC−MOSFETを示す。当該MOSFETが搭載されるMOSFETチップ100の上面には、ソース電極101とゲート電極に接続するゲートパッド102が配設される。またMOSFETチップ100の外周部には、終端構造としてフィールドリミッティングリング103が設けられている。
MOSFETの中には、例えば過電流破壊保護のための過電流検出に使用する目的で、当該MOSFETを流れる電流を検出するための電流センスセルを備えたものがある。一般的に電流センスセルは、ゲートおよびドレインが通常のMOSFETセル(主MOSFETセル)と共通しており、MOSFETを流れる主電流の一部を分流させ、主電流に比例した微小電流を得るものである。
実施の形態1では、バリアメタル層9がTiの場合において、バリアメタル層9の厚みが30nmの場合と75nmの場合で行ったHTGB試験の結果(図4)から、その厚さを60nm以上とすればしきい値電圧低下を概ね0.2V以内にできることを導き出した。
実施の形態1〜3では、Alの拡散を抑制するバリアメタル層9をTiまたはTiNとしたが、TiSiを使用しても同様の効果を得ることができる。
実施の形態5では、バリアメタル層9をTiSi層とTi層から成る二層構造とする例を示す。
実施の形態6では、バリアメタル層9をTiN層とTi層から成る二層構造とする例を示す。
図14は、実施の形態7に係るMOSFETチップ100の上面図である。当該MOSFETチップ100は、チップの温度を検出する温度センサーとして、温度センスダイオード120を備えている。なお、MOSFETチップ100のMOSFETセル部およびゲートパッド部の構造は、実施の形態1(図2)と同様であるので、ここでの説明は省略する。また当該MOSFETチップ100は、実施の形態2の電流センスセル110をさらに備えていてもよい。
Claims (11)
- 半導体層上に配設されたポリシリコンのゲート電極および前記半導体層の上部に形成された不純物領域であるソース領域を含む主トランジスタセルと、
前記ゲート電極上を覆う層間絶縁膜と、
前記ソース領域に接続すると共に前記層間絶縁膜上に延在するアルミニウムを含むソース電極と、
前記ゲート電極に接続するアルミニウムを含むゲートパッドと、
前記ソース電極と前記層間絶縁膜との間、並びに前記ゲートパッドと前記ゲート電極との間のそれぞれに介在し、アルミニウムの拡散を抑制するバリアメタル層とを備える
ことを特徴とする半導体装置。 - 前記主トランジスタセルと共通のゲート電極および前記主トランジスタセルとは個別のアルミニウムを含むソース電極を有する電流センスセルをさらに備え、
前記バリアメタル層は、前記電流センスセルのソース電極と前記層間絶縁膜との間にも配設されている
請求項1記載の半導体装置。 - 前記半導体層上に配設されたp型ポリシリコンおよびn型ポリシリコンから成る温度センスダイオードと、
前記p型ポリシリコンに接続するアノード電極と、
前記n型ポリシリコンに接続するカソード電極とをさらに備え、
前記バリアメタル層は、前記p型ポリシリコンと前記アノード電極との間ならびに前記n型ポリシリコンと前記カソード電極との間にも配設されている
請求項1または請求項2記載の半導体装置。 - 前記バリアメタル層は、厚さ40nm以上のTi層である
請求項1から請求項3のいずれか一項記載の半導体装置。 - 前記バリアメタル層は、厚さ90nm以上のTiN層である
請求項1から請求項3のいずれか一項記載の半導体装置。 - 前記バリアメタル層は、厚さ130nm以上のTiSi層である
請求項1から請求項3のいずれか一項記載の半導体装置。 - 前記バリアメタル層は、TiSi層およびTi層から成る二層構造である
請求項1から請求項3のいずれか一項記載の半導体装置。 - 前記バリアメタル層は、TiN層およびTi層から成る二層構造である
請求項1から請求項3のいずれか一項記載の半導体装置。 - 前記バリアメタル層は、TiSi層、TiN層、TiSi層とTi層との二層構造、およびTiN層とTi層との二層構造のいずれかである
請求項3記載の半導体装置。 - 前記ソース領域における前記ソース電極との接続部分に形成された、前記半導体層と金属との化合物層をさらに備える
請求項1から請求項9のいずれか一項記載の半導体装置。 - 前記半導体層は、ワイドバンドギャップ半導体である
請求項1から請求項10のいずれか一項記載の半導体装置。
Priority Applications (10)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011232666A JP5694119B2 (ja) | 2010-11-25 | 2011-10-24 | 炭化珪素半導体装置 |
KR1020110118734A KR101319469B1 (ko) | 2010-11-25 | 2011-11-15 | 반도체장치 |
US13/299,882 US9041007B2 (en) | 2010-11-25 | 2011-11-18 | Semiconductor device |
DE102011086943.3A DE102011086943B4 (de) | 2010-11-25 | 2011-11-23 | Halbleitervorrichtung |
CN201110380365.8A CN102610639B (zh) | 2010-11-25 | 2011-11-25 | 半导体装置 |
CN201410216921.1A CN104064591B (zh) | 2010-11-25 | 2011-11-25 | 半导体装置 |
CN201610222047.1A CN105702717A (zh) | 2010-11-25 | 2011-11-25 | 碳化硅半导体装置 |
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US14/702,212 US9842906B2 (en) | 2010-11-25 | 2015-05-01 | Semiconductor device |
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Families Citing this family (18)
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Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04158516A (ja) * | 1990-10-23 | 1992-06-01 | Nec Corp | 半導体装置の製造方法 |
JP2000216249A (ja) * | 1998-11-16 | 2000-08-04 | Sony Corp | 電子装置の製造方法及びその装置 |
JP2005057049A (ja) * | 2003-08-04 | 2005-03-03 | Renesas Technology Corp | 半導体装置およびその製造方法 |
JP2009176884A (ja) * | 2008-01-23 | 2009-08-06 | Sanken Electric Co Ltd | 半導体装置 |
JP2010129707A (ja) * | 2008-11-27 | 2010-06-10 | Fuji Electric Systems Co Ltd | 半導体装置およびその製造方法 |
JP2010244977A (ja) * | 2009-04-09 | 2010-10-28 | Renesas Electronics Corp | 半導体装置 |
Family Cites Families (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61105851A (ja) * | 1984-10-30 | 1986-05-23 | Toshiba Corp | ワイヤボンデイング方法 |
JP2761032B2 (ja) | 1989-05-30 | 1998-06-04 | 富士通株式会社 | 半導体装置 |
KR100215338B1 (ko) | 1991-03-06 | 1999-08-16 | 가나이 쓰도무 | 반도체 장치의 제조방법 |
US5209816A (en) | 1992-06-04 | 1993-05-11 | Micron Technology, Inc. | Method of chemical mechanical polishing aluminum containing metal layers and slurry for chemical mechanical polishing |
JPH06244287A (ja) | 1993-02-15 | 1994-09-02 | Matsushita Electron Corp | 半導体装置の製造方法 |
KR100526452B1 (ko) * | 1997-12-29 | 2007-11-09 | 주식회사 하이닉스반도체 | 반도체 장치의 콘택 전극 형성방법 |
JP2001237159A (ja) | 2000-02-21 | 2001-08-31 | Seiko Epson Corp | 半導体装置の製造方法 |
US7345342B2 (en) * | 2001-01-30 | 2008-03-18 | Fairchild Semiconductor Corporation | Power semiconductor devices and methods of manufacture |
JP4961646B2 (ja) | 2001-08-29 | 2012-06-27 | 株式会社デンソー | 半導体装置およびその製造方法 |
US7638841B2 (en) | 2003-05-20 | 2009-12-29 | Fairchild Semiconductor Corporation | Power semiconductor devices and methods of manufacture |
JP4945055B2 (ja) * | 2003-08-04 | 2012-06-06 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
KR100767078B1 (ko) | 2003-10-08 | 2007-10-15 | 도요다 지도샤 가부시끼가이샤 | 절연 게이트형 반도체 장치 및 그 제조 방법 |
JP4538211B2 (ja) | 2003-10-08 | 2010-09-08 | トヨタ自動車株式会社 | 絶縁ゲート型半導体装置およびその製造方法 |
JP4829480B2 (ja) * | 2004-05-10 | 2011-12-07 | 三菱電機株式会社 | 半導体装置 |
CN100505308C (zh) | 2004-06-14 | 2009-06-24 | Nxp股份有限公司 | 高压器件结构 |
US7439591B2 (en) * | 2004-10-05 | 2008-10-21 | Infineon Technologies Ag | Gate layer diode method and apparatus |
DE102005044510B4 (de) | 2005-09-16 | 2011-03-17 | Infineon Technologies Ag | Halbleiterbauteil mit Vorderseitenmetallisierung sowie Verfahren zu dessen Herstellung und Leistungsdiode |
JP2008098593A (ja) | 2006-09-15 | 2008-04-24 | Ricoh Co Ltd | 半導体装置及びその製造方法 |
JP4365894B2 (ja) * | 2007-08-07 | 2009-11-18 | パナソニック株式会社 | 炭化珪素半導体素子の製造方法 |
JP2009081177A (ja) * | 2007-09-25 | 2009-04-16 | Nec Electronics Corp | 電界効果トランジスタ、半導体チップ及び半導体装置 |
JP2009177102A (ja) | 2008-01-28 | 2009-08-06 | Nissan Motor Co Ltd | 半導体装置の電極の製造方法 |
JP2009194127A (ja) | 2008-02-14 | 2009-08-27 | Panasonic Corp | 半導体装置およびその製造方法 |
US8188538B2 (en) * | 2008-12-25 | 2012-05-29 | Rohm Co., Ltd. | Semiconductor device and method of manufacturing semiconductor device |
CN103855223B (zh) | 2009-03-25 | 2016-09-28 | 罗姆股份有限公司 | 半导体装置 |
JP5453903B2 (ja) | 2009-04-28 | 2014-03-26 | 富士電機株式会社 | ワイドバンドギャップ半導体装置 |
JP2011254387A (ja) * | 2010-06-03 | 2011-12-15 | Rohm Co Ltd | 交流スイッチ |
JP2012054378A (ja) * | 2010-09-01 | 2012-03-15 | Renesas Electronics Corp | 半導体装置 |
-
2011
- 2011-10-24 JP JP2011232666A patent/JP5694119B2/ja active Active
- 2011-11-15 KR KR1020110118734A patent/KR101319469B1/ko active IP Right Grant
- 2011-11-18 US US13/299,882 patent/US9041007B2/en active Active
- 2011-11-23 DE DE102011086943.3A patent/DE102011086943B4/de active Active
- 2011-11-25 CN CN201110380365.8A patent/CN102610639B/zh active Active
- 2011-11-25 CN CN201610222047.1A patent/CN105702717A/zh active Pending
- 2011-11-25 CN CN201410216921.1A patent/CN104064591B/zh active Active
-
2013
- 2013-07-29 KR KR1020130089423A patent/KR101437961B1/ko active IP Right Grant
-
2014
- 2014-07-10 KR KR1020140086563A patent/KR101642753B1/ko active IP Right Grant
-
2015
- 2015-05-01 US US14/702,212 patent/US9842906B2/en active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04158516A (ja) * | 1990-10-23 | 1992-06-01 | Nec Corp | 半導体装置の製造方法 |
JP2000216249A (ja) * | 1998-11-16 | 2000-08-04 | Sony Corp | 電子装置の製造方法及びその装置 |
JP2005057049A (ja) * | 2003-08-04 | 2005-03-03 | Renesas Technology Corp | 半導体装置およびその製造方法 |
JP2009176884A (ja) * | 2008-01-23 | 2009-08-06 | Sanken Electric Co Ltd | 半導体装置 |
JP2010129707A (ja) * | 2008-11-27 | 2010-06-10 | Fuji Electric Systems Co Ltd | 半導体装置およびその製造方法 |
JP2010244977A (ja) * | 2009-04-09 | 2010-10-28 | Renesas Electronics Corp | 半導体装置 |
Cited By (52)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014036032A (ja) * | 2012-08-07 | 2014-02-24 | Sumitomo Electric Ind Ltd | 炭化珪素半導体装置およびその製造方法 |
WO2014148131A1 (ja) * | 2013-03-22 | 2014-09-25 | 住友電気工業株式会社 | 炭化珪素半導体装置 |
JP2014187128A (ja) * | 2013-03-22 | 2014-10-02 | Sumitomo Electric Ind Ltd | 炭化珪素半導体装置 |
US9472635B2 (en) | 2013-03-22 | 2016-10-18 | Sumitomo Electric Industries, Ltd. | Silicon carbide semiconductor device |
US10355089B2 (en) | 2013-03-29 | 2019-07-16 | Fuji Electric Co., Ltd. | Semiconductor device and semiconductor device manufacturing method |
JP2017157851A (ja) * | 2013-03-29 | 2017-09-07 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
US9543858B2 (en) | 2013-07-10 | 2017-01-10 | Panasonic Intellectual Property Management Co., Ltd. | Semiconductor device and inverter using same |
US10079298B2 (en) | 2014-07-23 | 2018-09-18 | Fuji Electric Co., Ltd. | Semiconductor device and method of manufacturing semiconductor device |
JP2016046273A (ja) * | 2014-08-19 | 2016-04-04 | 国立研究開発法人産業技術総合研究所 | 炭化珪素半導体装置の製造方法 |
US10396161B2 (en) | 2014-09-08 | 2019-08-27 | Fuji Electric Co., Ltd. | Semiconductor device and method of manufacturing semiconductor device |
JPWO2016039073A1 (ja) * | 2014-09-08 | 2017-04-27 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
WO2016039073A1 (ja) * | 2014-09-08 | 2016-03-17 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
US10692979B2 (en) | 2014-09-08 | 2020-06-23 | Fuji Electric Co., Ltd. | Method of manufacturing semiconductor device |
JPWO2016039074A1 (ja) * | 2014-09-09 | 2017-04-27 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
WO2016114057A1 (ja) * | 2015-01-16 | 2016-07-21 | 富士電機株式会社 | 炭化珪素半導体装置および炭化珪素半導体装置の製造方法 |
JPWO2016114055A1 (ja) * | 2015-01-16 | 2017-08-31 | 富士電機株式会社 | 炭化珪素半導体装置および炭化珪素半導体装置の製造方法 |
DE112015004093B4 (de) | 2015-01-16 | 2023-09-28 | Fuji Electric Co., Ltd. | Siliciumcarbid-halbleitervorrichtung und verfahren zum herstellen einer siliciumcarbid-halbleitervorrichtung |
JPWO2016114057A1 (ja) * | 2015-01-16 | 2017-08-03 | 富士電機株式会社 | 炭化珪素半導体装置および炭化珪素半導体装置の製造方法 |
WO2016114055A1 (ja) * | 2015-01-16 | 2016-07-21 | 富士電機株式会社 | 炭化珪素半導体装置および炭化珪素半導体装置の製造方法 |
US10147797B2 (en) | 2015-01-16 | 2018-12-04 | Fuji Electric Co., Ltd. | Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device |
US10096680B2 (en) | 2015-01-16 | 2018-10-09 | Fuji Electric Co., Ltd. | Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device |
US11670633B2 (en) | 2015-02-13 | 2023-06-06 | Rohm Co., Ltd. | Semiconductor device and semiconductor module |
US11916069B2 (en) | 2015-02-13 | 2024-02-27 | Rohm Co., Ltd. | Semiconductor device and semiconductor module |
JPWO2016170836A1 (ja) * | 2015-04-20 | 2017-08-03 | 富士電機株式会社 | 半導体装置 |
US10090379B2 (en) | 2015-04-20 | 2018-10-02 | Fuji Electric Co., Ltd. | Hydrogen occlusion semiconductor device |
US9972572B2 (en) | 2015-04-20 | 2018-05-15 | Fuji Electric Co., Ltd. | Semiconductor device having a barrier layer |
WO2016170836A1 (ja) * | 2015-04-20 | 2016-10-27 | 富士電機株式会社 | 半導体装置 |
CN107017288A (zh) * | 2015-12-11 | 2017-08-04 | 富士电机株式会社 | 半导体装置及半导体装置的制造方法 |
JP2019054249A (ja) * | 2016-02-02 | 2019-04-04 | インフィネオン テクノロジーズ アーゲーInfineon Technologies Ag | 電力用半導体素子の負荷端子 |
US11315892B2 (en) | 2016-02-02 | 2022-04-26 | Infineon Technologies Ag | Power semiconductor device load terminal |
US10079217B2 (en) | 2016-02-02 | 2018-09-18 | Infineon Technologies Ag | Power semiconductor device load terminal |
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US10453923B2 (en) | 2016-03-16 | 2019-10-22 | Fuji Electric Co., Ltd. | Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device |
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US10833166B2 (en) | 2016-07-15 | 2020-11-10 | Rohm Co., Ltd. | Semiconductor device including an MIS structure |
WO2018012598A1 (ja) * | 2016-07-15 | 2018-01-18 | ローム株式会社 | 半導体装置 |
JPWO2018012598A1 (ja) * | 2016-07-15 | 2019-06-20 | ローム株式会社 | 半導体装置 |
JPWO2018038133A1 (ja) * | 2016-08-25 | 2019-01-10 | 三菱電機株式会社 | 炭化珪素半導体装置 |
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US10439034B2 (en) | 2017-11-28 | 2019-10-08 | Panasonic Intellectual Property Management Co., Ltd. | Semiconductor device and method for manufacturing same |
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JP2019096848A (ja) * | 2017-11-28 | 2019-06-20 | パナソニックIpマネジメント株式会社 | 半導体装置およびその製造方法 |
US11915988B2 (en) | 2018-04-27 | 2024-02-27 | Mitsubishi Electric Corporation | Semiconductor device and power converter |
JP2019207957A (ja) * | 2018-05-29 | 2019-12-05 | 富士電機株式会社 | 半導体装置 |
JP7135445B2 (ja) | 2018-05-29 | 2022-09-13 | 富士電機株式会社 | 半導体装置 |
JP2020136380A (ja) * | 2019-02-15 | 2020-08-31 | 富士電機株式会社 | 半導体装置の製造方法 |
JP7305979B2 (ja) | 2019-02-15 | 2023-07-11 | 富士電機株式会社 | 半導体装置の製造方法 |
JP7256254B2 (ja) | 2020-10-02 | 2023-04-11 | ローム株式会社 | 半導体装置 |
JP2022033226A (ja) * | 2020-10-02 | 2022-02-28 | ローム株式会社 | 半導体装置 |
DE102021127021A1 (de) | 2020-11-12 | 2022-05-12 | Mitsubishi Electric Corporation | Siliziumcarbid-Halbleitervorrichtung, Leistungswandler und Verfahren zum Herstellen einer Siliziumcarbid-Halbleitervorrichtung |
JP7461534B2 (ja) | 2021-12-23 | 2024-04-03 | ローム株式会社 | 半導体装置 |
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US20150243753A1 (en) | 2015-08-27 |
US9041007B2 (en) | 2015-05-26 |
DE102011086943B4 (de) | 2020-09-10 |
KR101642753B1 (ko) | 2016-07-26 |
US20120132912A1 (en) | 2012-05-31 |
CN105702717A (zh) | 2016-06-22 |
KR20120056770A (ko) | 2012-06-04 |
CN104064591B (zh) | 2017-11-17 |
KR20130098951A (ko) | 2013-09-05 |
JP5694119B2 (ja) | 2015-04-01 |
US9842906B2 (en) | 2017-12-12 |
KR20140095044A (ko) | 2014-07-31 |
CN104064591A (zh) | 2014-09-24 |
CN102610639B (zh) | 2016-05-04 |
CN102610639A (zh) | 2012-07-25 |
DE102011086943A1 (de) | 2012-05-31 |
KR101437961B1 (ko) | 2014-09-11 |
KR101319469B1 (ko) | 2013-10-17 |
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