JP2011529263A5 - - Google Patents

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Publication number
JP2011529263A5
JP2011529263A5 JP2011518995A JP2011518995A JP2011529263A5 JP 2011529263 A5 JP2011529263 A5 JP 2011529263A5 JP 2011518995 A JP2011518995 A JP 2011518995A JP 2011518995 A JP2011518995 A JP 2011518995A JP 2011529263 A5 JP2011529263 A5 JP 2011529263A5
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JP
Japan
Prior art keywords
conductor
forming
under bump
conductor structure
layer
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Application number
JP2011518995A
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English (en)
Japanese (ja)
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JP5595396B2 (ja
JP2011529263A (ja
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Priority claimed from US12/180,042 external-priority patent/US8314474B2/en
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Publication of JP2011529263A publication Critical patent/JP2011529263A/ja
Publication of JP2011529263A5 publication Critical patent/JP2011529263A5/ja
Application granted granted Critical
Publication of JP5595396B2 publication Critical patent/JP5595396B2/ja
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JP2011518995A 2008-07-25 2009-07-23 オンダイ・キャパシタ用アンダーバンプメタル Active JP5595396B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/180,042 US8314474B2 (en) 2008-07-25 2008-07-25 Under bump metallization for on-die capacitor
US12/180,042 2008-07-25
PCT/CA2009/001039 WO2010009553A1 (en) 2008-07-25 2009-07-23 Under bump metallization for on-die capacitor

Publications (3)

Publication Number Publication Date
JP2011529263A JP2011529263A (ja) 2011-12-01
JP2011529263A5 true JP2011529263A5 (enExample) 2012-09-06
JP5595396B2 JP5595396B2 (ja) 2014-09-24

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ID=41567883

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011518995A Active JP5595396B2 (ja) 2008-07-25 2009-07-23 オンダイ・キャパシタ用アンダーバンプメタル

Country Status (6)

Country Link
US (1) US8314474B2 (enExample)
EP (2) EP3193366A3 (enExample)
JP (1) JP5595396B2 (enExample)
KR (1) KR101752375B1 (enExample)
CN (1) CN102150228B (enExample)
WO (1) WO2010009553A1 (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5269563B2 (ja) * 2008-11-28 2013-08-21 新光電気工業株式会社 配線基板とその製造方法
US8497564B2 (en) * 2009-08-13 2013-07-30 Broadcom Corporation Method for fabricating a decoupling composite capacitor in a wafer and related structure
US8823166B2 (en) * 2010-08-30 2014-09-02 Taiwan Semiconductor Manufacturing Company, Ltd. Pillar bumps and process for making same
US8338286B2 (en) 2010-10-05 2012-12-25 International Business Machines Corporation Dimensionally decoupled ball limiting metalurgy
US9142520B2 (en) * 2011-08-30 2015-09-22 Ati Technologies Ulc Methods of fabricating semiconductor chip solder structures
US9006907B2 (en) 2012-05-29 2015-04-14 Rambus Inc. Distributed on-chip decoupling apparatus and method using package interconnect
US9287347B2 (en) 2013-02-12 2016-03-15 Qualcomm Incorporated Metal-insulator-metal capacitor under redistribution layer
US9478510B2 (en) * 2013-12-19 2016-10-25 Texas Instruments Incorporated Self-aligned under bump metal
US9935052B1 (en) 2014-11-26 2018-04-03 Altera Corporation Power line layout in integrated circuits
JP6332547B2 (ja) * 2015-02-27 2018-05-30 株式会社村田製作所 キャパシタおよび電子機器
US9859358B2 (en) * 2015-05-26 2018-01-02 Altera Corporation On-die capacitor (ODC) structure
DE102018111441A1 (de) 2018-05-14 2019-11-14 Ottobock Se & Co. Kgaa Ventil und Prothesenkniegelenk mit einem solchen
US10621387B2 (en) 2018-05-30 2020-04-14 Seagate Technology Llc On-die decoupling capacitor area optimization
WO2020033632A2 (en) * 2018-08-08 2020-02-13 Kuprion Inc. Electronic assemblies employing copper in multiple locations
US12091310B2 (en) * 2020-05-27 2024-09-17 Apogee Semiconductor, Inc. Integrated circuit packages having stress-relieving features
US12431858B2 (en) * 2022-05-26 2025-09-30 Win Semiconductors Corp. Electronic structure and method of manufacturing the same

Family Cites Families (85)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US832486A (en) * 1906-04-14 1906-10-02 William F Kiesel Jr Railway-car frame.
US949951A (en) * 1908-11-16 1910-02-22 Joseph Zieg Motor.
GB1149569A (en) 1966-09-01 1969-04-23 Mini Of Technology Capacitors and methods for their manufacture
US3593319A (en) * 1968-12-23 1971-07-13 Gen Electric Card-changeable capacitor read-only memory
DE2548563A1 (de) 1975-10-30 1977-05-05 Licentia Gmbh Verfahren zum herstellen eines kondensators
US4249196A (en) * 1978-08-21 1981-02-03 Burroughs Corporation Integrated circuit module with integral capacitor
JPS56101732A (en) * 1980-01-18 1981-08-14 Matsushita Electric Industrial Co Ltd Metallized film condenser
US4409608A (en) * 1981-04-28 1983-10-11 The United States Of America As Represented By The Secretary Of The Navy Recessed interdigitated integrated capacitor
GB2115223B (en) * 1982-02-18 1985-07-10 Standard Telephones Cables Ltd Multilayer ceramic dielectric capacitors
US4901128A (en) * 1982-11-04 1990-02-13 Hitachi, Ltd. Semiconductor memory
JPS5991718A (ja) 1982-11-16 1984-05-26 Elmec Corp 電磁遅延線
KR900001394B1 (en) * 1985-04-05 1990-03-09 Fujitsu Ltd Super high frequency intergrated circuit device
JPS61259560A (ja) 1985-05-14 1986-11-17 Nec Corp 半導体集積回路
JPS61263251A (ja) 1985-05-17 1986-11-21 Nec Corp 半導体装置
US4685197A (en) * 1986-01-07 1987-08-11 Texas Instruments Incorporated Fabricating a stacked capacitor
EP0246808B1 (en) 1986-05-16 1993-01-20 Showa Denko Kabushiki Kaisha Solid electrolytic capacitor
JPS6370550A (ja) * 1986-09-12 1988-03-30 Nec Corp 半導体集積回路装置
JPS6484616A (en) 1987-09-28 1989-03-29 Toshiba Corp Condenser
JPH0196943A (ja) 1987-10-09 1989-04-14 Toshiba Corp 半導体集積回路装置
DE68929148T2 (de) 1988-06-21 2000-09-21 Sanyo Electric Co., Ltd. Integrierte Halbleiterschaltung
US5162258A (en) * 1988-10-17 1992-11-10 Lemnios Zachary J Three metal personalization of application specific monolithic microwave integrated circuit
US4866567A (en) * 1989-01-06 1989-09-12 Ncr Corporation High frequency integrated circuit channel capacitor
US4914546A (en) * 1989-02-03 1990-04-03 Micrel Incorporated Stacked multi-polysilicon layer capacitor
JPH02231755A (ja) 1989-03-03 1990-09-13 Mitsubishi Electric Corp Mim容量を備えたモノリシック集積回路
US5053916A (en) * 1989-03-13 1991-10-01 U.S. Philips Corporation Surface-mounted multilayer capacitor and printed circuit board having such a multilayer capacitor
US5089878A (en) * 1989-06-09 1992-02-18 Lee Jaesup N Low impedance packaging
JP2700959B2 (ja) 1991-02-25 1998-01-21 三菱電機株式会社 集積回路のキャパシタ
US5081559A (en) * 1991-02-28 1992-01-14 Micron Technology, Inc. Enclosed ferroelectric stacked capacitor
US5189594A (en) * 1991-09-20 1993-02-23 Rohm Co., Ltd. Capacitor in a semiconductor integrated circuit and non-volatile memory using same
US5155658A (en) * 1992-03-05 1992-10-13 Bell Communications Research, Inc. Crystallographically aligned ferroelectric films usable in memories and method of crystallographically aligning perovskite films
US5208725A (en) * 1992-08-19 1993-05-04 Akcasu Osman E High capacitance structure in a semiconductor device
JP3057130B2 (ja) * 1993-02-18 2000-06-26 三菱電機株式会社 樹脂封止型半導体パッケージおよびその製造方法
JP3160198B2 (ja) * 1995-02-08 2001-04-23 インターナショナル・ビジネス・マシーンズ・コーポレ−ション デカップリング・コンデンサが形成された半導体基板及びこれの製造方法
US5874782A (en) * 1995-08-24 1999-02-23 International Business Machines Corporation Wafer with elevated contact structures
DE19753773A1 (de) 1997-12-04 1999-06-10 Basf Ag Verfahren zur Herstellung von Chlorcarbonsäurechloriden
JP3147162B2 (ja) 1998-07-13 2001-03-19 日本電気株式会社 フリップチップ集積回路のバンプ配置方法、およびフリップチップ集積回路
US7531417B2 (en) * 1998-12-21 2009-05-12 Megica Corporation High performance system-on-chip passive device using post passivation process
US8021976B2 (en) * 2002-10-15 2011-09-20 Megica Corporation Method of wire bonding over active area of a semiconductor circuit
WO2000044043A1 (fr) * 1999-01-22 2000-07-27 Hitachi, Ltd. Dispositif a semi-conducteurs et son procede de fabrication
JP2001168125A (ja) * 1999-12-03 2001-06-22 Nec Corp 半導体装置
US6825522B1 (en) * 2000-07-13 2004-11-30 Micron Technology, Inc. Capacitor electrode having an interface layer of different chemical composition formed on a bulk layer
US6847066B2 (en) * 2000-08-11 2005-01-25 Oki Electric Industry Co., Ltd. Semiconductor device
US6552436B2 (en) * 2000-12-08 2003-04-22 Motorola, Inc. Semiconductor device having a ball grid array and method therefor
US6433427B1 (en) * 2001-01-16 2002-08-13 Industrial Technology Research Institute Wafer level package incorporating dual stress buffer layers for I/O redistribution and method for fabrication
US6686659B2 (en) * 2001-02-23 2004-02-03 Intel Corporation Selectable decoupling capacitors for integrated circuit and methods of use
JP2002270767A (ja) * 2001-03-06 2002-09-20 Canon Inc 半導体集積回路
JP2002270771A (ja) * 2001-03-09 2002-09-20 Hitachi Ltd 半導体装置の製造方法
US6387795B1 (en) * 2001-03-22 2002-05-14 Apack Technologies Inc. Wafer-level packaging
US7038294B2 (en) * 2001-03-29 2006-05-02 Taiwan Semiconductor Manufacturing Company, Ltd. Planar spiral inductor structure with patterned microelectronic structure integral thereto
US6806553B2 (en) * 2001-03-30 2004-10-19 Kyocera Corporation Tunable thin film capacitor
US7215022B2 (en) * 2001-06-21 2007-05-08 Ati Technologies Inc. Multi-die module
US6800947B2 (en) * 2001-06-27 2004-10-05 Intel Corporation Flexible tape electronics packaging
US6706584B2 (en) * 2001-06-29 2004-03-16 Intel Corporation On-die de-coupling capacitor using bumps or bars and method of making same
US6979896B2 (en) * 2001-10-30 2005-12-27 Intel Corporation Power gridding scheme
DE10159466A1 (de) * 2001-12-04 2003-06-12 Koninkl Philips Electronics Nv Anordnung mit Kondensator
US7932603B2 (en) * 2001-12-13 2011-04-26 Megica Corporation Chip structure and process for forming the same
US6617655B1 (en) * 2002-04-05 2003-09-09 Fairchild Semiconductor Corporation MOSFET device with multiple gate contacts offset from gate contact area and over source area
JP3938759B2 (ja) * 2002-05-31 2007-06-27 富士通株式会社 半導体装置及び半導体装置の製造方法
US6800930B2 (en) * 2002-07-31 2004-10-05 Micron Technology, Inc. Semiconductor dice having back side redistribution layer accessed using through-silicon vias, and assemblies
JP2004079801A (ja) * 2002-08-19 2004-03-11 Fujitsu Ltd コンデンサ装置及びその製造方法
US7112884B2 (en) * 2002-08-23 2006-09-26 Ati Technologies, Inc. Integrated circuit having memory disposed thereon and method of making thereof
JP3910907B2 (ja) * 2002-10-29 2007-04-25 新光電気工業株式会社 キャパシタ素子及びこの製造方法、半導体装置用基板、並びに半導体装置
JP3966208B2 (ja) * 2002-11-14 2007-08-29 富士通株式会社 薄膜キャパシタおよびその製造方法
US7161793B2 (en) * 2002-11-14 2007-01-09 Fujitsu Limited Layer capacitor element and production process as well as electronic device
JP2004273825A (ja) * 2003-03-10 2004-09-30 Fujitsu Ltd 薄膜キャパシタ素子、その製造方法及び電子装置
JP3808030B2 (ja) * 2002-11-28 2006-08-09 沖電気工業株式会社 半導体装置及びその製造方法
JP4571781B2 (ja) * 2003-03-26 2010-10-27 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP4367070B2 (ja) * 2003-09-29 2009-11-18 カシオ計算機株式会社 半導体装置及びその製造方法
JP4904670B2 (ja) * 2004-06-02 2012-03-28 富士通セミコンダクター株式会社 半導体装置
US20090014869A1 (en) 2004-10-29 2009-01-15 Vrtis Joan K Semiconductor device package with bump overlying a polymer layer
JP4864313B2 (ja) * 2004-11-19 2012-02-01 富士通株式会社 薄膜キャパシタ基板、その製造方法、及び、半導体装置
JP4499548B2 (ja) * 2004-12-24 2010-07-07 新光電気工業株式会社 キャパシタ部品
JP4449824B2 (ja) 2005-06-01 2010-04-14 カシオ計算機株式会社 半導体装置およびその実装構造
US7364998B2 (en) * 2005-07-21 2008-04-29 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming high reliability bump structure
JP2007059878A (ja) * 2005-07-27 2007-03-08 Seiko Epson Corp 半導体装置、及び発振器
JP2007073681A (ja) * 2005-09-06 2007-03-22 Renesas Technology Corp 半導体装置およびその製造方法
JP2007081267A (ja) * 2005-09-16 2007-03-29 Casio Comput Co Ltd 半導体装置およびその製造方法
US7473999B2 (en) * 2005-09-23 2009-01-06 Megica Corporation Semiconductor chip and process for forming the same
FR2894716A1 (fr) * 2005-12-09 2007-06-15 St Microelectronics Sa Puce de circuits integres a plots externes et procede de fabrication d'une telle puce
JP4595823B2 (ja) * 2006-01-24 2010-12-08 株式会社デンソー ボールグリッドアレイ
US20070176292A1 (en) * 2006-01-27 2007-08-02 Taiwan Semiconductor Manufacturing Co., Ltd. Bonding pad structure
JP5027431B2 (ja) * 2006-03-15 2012-09-19 ルネサスエレクトロニクス株式会社 半導体装置
US8053824B2 (en) * 2006-04-03 2011-11-08 Lsi Corporation Interdigitated mesh to provide distributed, high quality factor capacitive coupling
JP2006203261A (ja) 2006-04-26 2006-08-03 Renesas Technology Corp 半導体装置
US7426102B2 (en) * 2006-05-01 2008-09-16 Vishay Intertechnology, Inc. High precision capacitor with standoff

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