JP2011512037A5 - - Google Patents

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JP2011512037A5
JP2011512037A5 JP2010546060A JP2010546060A JP2011512037A5 JP 2011512037 A5 JP2011512037 A5 JP 2011512037A5 JP 2010546060 A JP2010546060 A JP 2010546060A JP 2010546060 A JP2010546060 A JP 2010546060A JP 2011512037 A5 JP2011512037 A5 JP 2011512037A5
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led
substrate
light
emitter
layer
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JP2010546060A
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JP2011512037A (ja
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Priority claimed from PCT/US2009/033429 external-priority patent/WO2009100358A1/en
Publication of JP2011512037A publication Critical patent/JP2011512037A/ja
Publication of JP2011512037A5 publication Critical patent/JP2011512037A5/ja
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JP2010546060A 2008-02-08 2009-02-06 エミッタ層成形のためのシステムおよび方法 Withdrawn JP2011512037A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US2735408P 2008-02-08 2008-02-08
US4996408P 2008-05-02 2008-05-02
PCT/US2009/033429 WO2009100358A1 (en) 2008-02-08 2009-02-06 System and method for emitter layer shaping

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JP2011512037A JP2011512037A (ja) 2011-04-14
JP2011512037A5 true JP2011512037A5 (https=) 2011-06-16

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JP2010546060A Withdrawn JP2011512037A (ja) 2008-02-08 2009-02-06 エミッタ層成形のためのシステムおよび方法

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US (2) US7829358B2 (https=)
EP (1) EP2240968A1 (https=)
JP (1) JP2011512037A (https=)
KR (1) KR20100122485A (https=)
CN (1) CN101939849A (https=)
TW (1) TW200941773A (https=)
WO (1) WO2009100358A1 (https=)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009530798A (ja) 2006-01-05 2009-08-27 イルミテックス, インコーポレイテッド Ledから光を導くための独立した光学デバイス
US7789531B2 (en) 2006-10-02 2010-09-07 Illumitex, Inc. LED system and method
CN101939849A (zh) 2008-02-08 2011-01-05 伊鲁米特克有限公司 用于发射器层成形的系统和方法
US8569085B2 (en) * 2008-10-09 2013-10-29 The Regents Of The University Of California Photoelectrochemical etching for chip shaping of light emitting diodes
TW201034256A (en) 2008-12-11 2010-09-16 Illumitex Inc Systems and methods for packaging light-emitting diode devices
US8449128B2 (en) 2009-08-20 2013-05-28 Illumitex, Inc. System and method for a lens and phosphor layer
US8585253B2 (en) 2009-08-20 2013-11-19 Illumitex, Inc. System and method for color mixing lens array
EP2793163B1 (en) * 2010-03-11 2016-05-18 Datalogic IP TECH S.r.l. Image capturing device
US9852870B2 (en) 2011-05-23 2017-12-26 Corporation For National Research Initiatives Method for the fabrication of electron field emission devices including carbon nanotube field electron emisson devices
DE102011080179A1 (de) * 2011-08-01 2013-02-07 Osram Ag Wellenlängenkonversionskörper und Verfahren zu dessen Herstellung
US20130120986A1 (en) 2011-11-12 2013-05-16 Raydex Technology, Inc. High efficiency directional light source with concentrated light output
TW201334218A (zh) * 2012-02-14 2013-08-16 Lextar Electronics Corp 發光半導體之圖案化基材及其製造方法
US9328898B1 (en) * 2012-02-21 2016-05-03 Richard Arthur Flasck High efficiency hybrid illumination system
TW201408923A (zh) * 2012-08-30 2014-03-01 Walsin Lihwa Corp 雷射發光裝置
ITBA20120076A1 (it) * 2012-11-30 2014-05-31 Haisenlux Srl Illuminazione stradale led al alta potenza (superiore ai 38w) realizzato con microled con corrente inferiore a 60ma per illuminazione stradale.
KR101916274B1 (ko) * 2013-01-24 2018-11-07 삼성전자주식회사 반도체 발광소자 및 그 제조방법
CN103226241B (zh) * 2013-04-22 2015-09-09 中国科学院长春光学精密机械与物理研究所 一种基于能量守恒定律的光学系统分析设计方法
US9574762B1 (en) * 2014-09-30 2017-02-21 Amazon Technologies, Inc. Light assemblies for electronic devices containing audio circuitry
GB201420860D0 (en) 2014-11-24 2015-01-07 Infiniled Ltd Micro-LED device
JP6156402B2 (ja) 2015-02-13 2017-07-05 日亜化学工業株式会社 発光装置
US10056264B2 (en) * 2015-06-05 2018-08-21 Lam Research Corporation Atomic layer etching of GaN and other III-V materials
US10096487B2 (en) 2015-08-19 2018-10-09 Lam Research Corporation Atomic layer etching of tungsten and other metals
US9991128B2 (en) 2016-02-05 2018-06-05 Lam Research Corporation Atomic layer etching in continuous plasma
JP6991981B2 (ja) 2016-02-24 2022-01-13 マジック リープ, インコーポレイテッド 光エミッタのための薄型相互接続子
DE102017121346A1 (de) 2016-09-15 2018-03-15 Osram Opto Semiconductors Gmbh Messsystem, Verwendung zumindest einer individuell betreibbaren Leuchtdioden-Leuchteinheit als Sendereinheit in einem Messsystem, Verfahren zum Betrieb eines Messsystems und Beleuchtungsquelle mit einem Messsystem
US10566212B2 (en) 2016-12-19 2020-02-18 Lam Research Corporation Designer atomic layer etching
JP7079106B2 (ja) * 2018-01-24 2022-06-01 シャープ株式会社 画像表示素子、及び画像表示素子の製造方法
US20230215996A1 (en) * 2020-05-25 2023-07-06 Kyocera Corporation Light-emitting device and display device
FR3118290A1 (fr) * 2020-12-17 2022-06-24 Aledia Dispositif optoélectronique à diodes électroluminescentes tridimensionnelles de type axial
WO2022169509A1 (en) 2021-02-03 2022-08-11 Lam Research Corporation Etch selectivity control in atomic layer etching
JP7455267B1 (ja) * 2022-10-28 2024-03-25 Dowaエレクトロニクス株式会社 紫外線発光素子及びその製造方法
WO2025085461A1 (en) * 2023-10-16 2025-04-24 Tectus Corporation Quantum dot containers for micro-led displays

Family Cites Families (497)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1670837A (en) 1924-01-31 1928-05-22 Gen Motors Corp Head-lamp reflector
US3981023A (en) 1974-09-16 1976-09-14 Northern Electric Company Limited Integral lens light emitting diode
US3988633A (en) 1975-01-30 1976-10-26 Duro-Test Corporation Fluorescent lamp with envelope grooves
US4180755A (en) 1976-12-10 1979-12-25 Corning Glass Works Sealed beam lamp including filament locating means
US4125890A (en) 1976-12-10 1978-11-14 Corning Glass Works Parabolic reflector including filament locating means
US4239369A (en) 1978-11-20 1980-12-16 Gte Products Corporation Camera and reflector having offset optical and mechanical axes
US4728999A (en) * 1980-06-25 1988-03-01 Pitney Bowes Inc. Light emitting diode assembly
US4304479A (en) 1980-07-28 1981-12-08 Polaroid Corporation Photographic lighting apparatus
US4388633A (en) 1980-09-29 1983-06-14 Hughes Aircraft Company Monolithic transistor coupled electroluminescent diode
US4439910A (en) 1980-09-29 1984-04-03 Hughes Aircraft Company Process for fabrication of monolithic transistor coupled electroluminescent diode
US4501637A (en) * 1981-06-12 1985-02-26 Motorola, Inc. LED having self-aligned lens
JPS5896785A (ja) 1981-12-04 1983-06-08 Stanley Electric Co Ltd 発光ダイオ−ドの合成樹脂レンズ成形方法
DE3532821A1 (de) 1985-09-13 1987-03-26 Siemens Ag Leuchtdiode (led) mit sphaerischer linse
US4716507A (en) 1986-05-12 1987-12-29 The United States Of America As Represented By The Secretary Of The Army Optical collimator target illumination
US5218216A (en) 1987-01-31 1993-06-08 Toyoda Gosei Co., Ltd. Gallium nitride group semiconductor and light emitting diode comprising it and the process of producing the same
US4799136A (en) * 1987-05-29 1989-01-17 Guth Lighting Systems, Inc. Lighting fixture having concave shaped reflector and improved asymmetric light reflection system
US5114513A (en) 1988-10-27 1992-05-19 Omron Tateisi Electronics Co. Optical device and manufacturing method thereof
US5087949A (en) * 1989-06-27 1992-02-11 Hewlett-Packard Company Light-emitting diode with diagonal faces
US4966862A (en) 1989-08-28 1990-10-30 Cree Research, Inc. Method of production of light emitting diodes
US5036339A (en) 1989-09-05 1991-07-30 Eastman Kodak Company LED array into floating focusing structure for differential expansion
GB8923122D0 (en) 1989-10-13 1989-11-29 Bastable Rodney C Light fittings
US5278433A (en) * 1990-02-28 1994-01-11 Toyoda Gosei Co., Ltd. Light-emitting semiconductor device using gallium nitride group compound with double layer structures for the n-layer and/or the i-layer
US5281830A (en) * 1990-10-27 1994-01-25 Toyoda Gosei Co., Ltd. Light-emitting semiconductor device using gallium nitride group compound
US5151718A (en) 1990-12-31 1992-09-29 Texas Instruments Incorporated System and method for solid state illumination for dmd devices
US5126929A (en) 1991-01-09 1992-06-30 R & D Molded Products, Inc. LED holder with lens
JP2655452B2 (ja) 1991-02-21 1997-09-17 日本電気株式会社 発光ダイオード用拡散レンズ
JP2786952B2 (ja) 1991-02-27 1998-08-13 株式会社豊田中央研究所 窒化ガリウム系化合物半導体発光素子およびその製造方法
US5174649B1 (en) 1991-07-17 1998-04-14 Precision Solar Controls Inc Led lamp including refractive lens element
JP2666228B2 (ja) 1991-10-30 1997-10-22 豊田合成株式会社 窒化ガリウム系化合物半導体発光素子
US5233204A (en) 1992-01-10 1993-08-03 Hewlett-Packard Company Light-emitting diode with a thick transparent layer
US5528720A (en) 1992-03-23 1996-06-18 Minnesota Mining And Manufacturing Co. Tapered multilayer luminaire devices
US6002829A (en) 1992-03-23 1999-12-14 Minnesota Mining And Manufacturing Company Luminaire device
US5578839A (en) 1992-11-20 1996-11-26 Nichia Chemical Industries, Ltd. Light-emitting gallium nitride-based compound semiconductor device
DE69433926T2 (de) 1993-04-28 2005-07-21 Nichia Corp., Anan Halbleitervorrichtung aus einer galliumnitridartigen III-V-Halbleiterverbindung
US6093941A (en) 1993-09-09 2000-07-25 The United States Of America As Represented By The Secretary Of The Navy Photonic silicon on a transparent substrate
US5846844A (en) 1993-11-29 1998-12-08 Toyoda Gosei Co., Ltd. Method for producing group III nitride compound semiconductor substrates using ZnO release layers
JPH07202265A (ja) 1993-12-27 1995-08-04 Toyoda Gosei Co Ltd Iii族窒化物半導体の製造方法
JP3412224B2 (ja) 1994-01-07 2003-06-03 住友電気工業株式会社 レンズ実装方法と装置
JPH07263748A (ja) 1994-03-22 1995-10-13 Toyoda Gosei Co Ltd 3族窒化物半導体発光素子及びその製造方法
JP2698796B2 (ja) 1994-04-20 1998-01-19 豊田合成株式会社 3族窒化物半導体発光素子
JP3717196B2 (ja) * 1994-07-19 2005-11-16 豊田合成株式会社 発光素子
JPH0832112A (ja) 1994-07-20 1996-02-02 Toyoda Gosei Co Ltd 3族窒化物半導体発光素子
JP4094054B2 (ja) 1994-08-29 2008-06-04 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 反射形ランプ
US5544268A (en) 1994-09-09 1996-08-06 Deacon Research Display panel with electrically-controlled waveguide-routing
DE4434948C2 (de) * 1994-09-29 1998-05-20 Siemens Ag Mammographie-Antennenanordnung für Magnetresonanzuntersuchungen einer weiblichen Brust
US5631190A (en) 1994-10-07 1997-05-20 Cree Research, Inc. Method for producing high efficiency light-emitting diodes and resulting diode structures
US5654831A (en) 1995-01-04 1997-08-05 Hughes Electronics Refractive ellipsoid optical surface without spherical aberration
US5523591A (en) 1995-01-25 1996-06-04 Eastman Kodak Company Assembly of led array and lens with engineered light output profile and method for making the assembly
DE69637304T2 (de) 1995-03-17 2008-08-07 Toyoda Gosei Co., Ltd. Lichtemittierende Halbleitervorrichtung bestehend aus einer III-V Nitridverbindung
US5739554A (en) 1995-05-08 1998-04-14 Cree Research, Inc. Double heterojunction light emitting diode with gallium nitride active layer
US5790583A (en) 1995-05-25 1998-08-04 Northwestern University Photonic-well Microcavity light emitting devices
JP3620926B2 (ja) 1995-06-16 2005-02-16 豊田合成株式会社 p伝導形3族窒化物半導体の電極及び電極形成方法及び素子
US5780867A (en) 1996-03-07 1998-07-14 Sandia Corporation Broadband light-emitting diode
CH691045A5 (fr) 1996-04-16 2001-04-12 Hct Shaping Systems Sa Procédé pour l'orientation de plusieurs pièces cristallines posées côte à côte sur un support de découpage en vue d'une découpe simultanée dans une machine de découpage et dispositif pour la
JP3209096B2 (ja) 1996-05-21 2001-09-17 豊田合成株式会社 3族窒化物化合物半導体発光素子
DE59713024D1 (de) 1996-06-26 2010-01-28 Osram Opto Semiconductors Gmbh Lichtabstrahlender Halbleiterchip und Lichtabstrahlendes Halbleiterbauelement und Verfahren zu dessen Herstellung
DE19638667C2 (de) 1996-09-20 2001-05-17 Osram Opto Semiconductors Gmbh Mischfarbiges Licht abstrahlendes Halbleiterbauelement mit Lumineszenzkonversionselement
US6177761B1 (en) * 1996-07-17 2001-01-23 Teledyne Lighting And Display Products, Inc. LED with light extractor
TW383508B (en) 1996-07-29 2000-03-01 Nichia Kagaku Kogyo Kk Light emitting device and display
JPH1065215A (ja) * 1996-08-22 1998-03-06 Toyoda Gosei Co Ltd Iii族窒化物半導体発光素子
AU5156198A (en) 1996-10-29 1998-05-22 Xeotron Corporation Optical device utilizing optical waveguides and mechanical light-switches
CN1126001C (zh) 1997-02-13 2003-10-29 联合讯号公司 具有光循环以增强亮度的照明系统
JPH10257273A (ja) * 1997-03-07 1998-09-25 Dainippon Screen Mfg Co Ltd 画像読取装置
CN1159750C (zh) 1997-04-11 2004-07-28 日亚化学工业株式会社 氮化物半导体的生长方法
WO1998049716A1 (en) 1997-04-28 1998-11-05 Osram Sylvania Inc. Vehicle lamps with glare control
US5813753A (en) 1997-05-27 1998-09-29 Philips Electronics North America Corporation UV/blue led-phosphor device with efficient conversion of UV/blues light to visible light
KR100563853B1 (ko) 1997-05-27 2006-03-24 오스람 옵토 세미컨덕터스 게엠베하 발광 소자의 제조 방법
US6784463B2 (en) 1997-06-03 2004-08-31 Lumileds Lighting U.S., Llc III-Phospide and III-Arsenide flip chip light-emitting devices
US6229160B1 (en) 1997-06-03 2001-05-08 Lumileds Lighting, U.S., Llc Light extraction from a semiconductor light-emitting device via chip shaping
CA2298491C (en) 1997-07-25 2009-10-06 Nichia Chemical Industries, Ltd. Nitride semiconductor device
EP1004145B1 (de) * 1997-07-29 2005-06-01 Osram Opto Semiconductors GmbH Optoelektronisches bauelement
KR100651145B1 (ko) 1997-08-29 2006-11-28 크리 인코포레이티드 표준 응용에서 고신뢰성을 위한 강한 3족 질화물 발광다이오드
US6825501B2 (en) 1997-08-29 2004-11-30 Cree, Inc. Robust Group III light emitting diode for high reliability in standard packaging applications
US7075610B2 (en) 1997-09-16 2006-07-11 Michael Scalora Liquid crystal display device and light emitting structure with photonic band gap transparent electrode structures
US20030054400A1 (en) 1997-09-17 2003-03-20 Genentech, Inc. Secreted and transmembrane polypeptides and nucleic acids encoding the same
US6201262B1 (en) * 1997-10-07 2001-03-13 Cree, Inc. Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlay structure
EP0926744B8 (en) 1997-12-15 2008-05-21 Philips Lumileds Lighting Company, LLC. Light emitting device
US6501091B1 (en) 1998-04-01 2002-12-31 Massachusetts Institute Of Technology Quantum dot white and colored light emitting diodes
US6078064A (en) 1998-05-04 2000-06-20 Epistar Co. Indium gallium nitride light emitting diode
US6936859B1 (en) 1998-05-13 2005-08-30 Toyoda Gosei Co., Ltd. Light-emitting semiconductor device using group III nitride compound
US6657300B2 (en) 1998-06-05 2003-12-02 Lumileds Lighting U.S., Llc Formation of ohmic contacts in III-nitride light emitting devices
US6194742B1 (en) * 1998-06-05 2001-02-27 Lumileds Lighting, U.S., Llc Strain engineered and impurity controlled III-V nitride semiconductor films and optoelectronic devices
US6356700B1 (en) * 1998-06-08 2002-03-12 Karlheinz Strobl Efficient light engine systems, components and methods of manufacture
DE19829197C2 (de) 1998-06-30 2002-06-20 Siemens Ag Strahlungsaussendendes und/oder -empfangendes Bauelement
US6229782B1 (en) 1998-07-06 2001-05-08 Read-Rite Corporation High numerical aperture optical focusing device for use in data storage systems
US6377535B1 (en) 1998-07-06 2002-04-23 Read-Rite Corporation High numerical aperture optical focusing device having a conical incident facet and a parabolic reflector for use in data storage systems
JP3785820B2 (ja) 1998-08-03 2006-06-14 豊田合成株式会社 発光装置
US6005722A (en) 1998-09-04 1999-12-21 Hewlett-Packard Company Optical display system including a light valve
US6169294B1 (en) * 1998-09-08 2001-01-02 Epistar Co. Inverted light emitting diode
US6291839B1 (en) 1998-09-11 2001-09-18 Lulileds Lighting, U.S. Llc Light emitting device having a finely-patterned reflective contact
US6459100B1 (en) 1998-09-16 2002-10-01 Cree, Inc. Vertical geometry ingan LED
US6608330B1 (en) 1998-09-21 2003-08-19 Nichia Corporation Light emitting device
US6274924B1 (en) 1998-11-05 2001-08-14 Lumileds Lighting, U.S. Llc Surface mountable LED package
US6307218B1 (en) 1998-11-20 2001-10-23 Lumileds Lighting, U.S., Llc Electrode structures for light emitting devices
KR100305572B1 (ko) 1998-12-02 2001-11-22 이형도 발광다이오드및그제조방법
US6331450B1 (en) 1998-12-22 2001-12-18 Toyoda Gosei Co., Ltd. Method of manufacturing semiconductor device using group III nitride compound
US6273589B1 (en) * 1999-01-29 2001-08-14 Agilent Technologies, Inc. Solid state illumination source utilizing dichroic reflectors
JP4296644B2 (ja) 1999-01-29 2009-07-15 豊田合成株式会社 発光ダイオード
US6364487B1 (en) 1999-01-29 2002-04-02 Agilent Technologies, Inc. Solid state based illumination source for a projection display
US20010042866A1 (en) 1999-02-05 2001-11-22 Carrie Carter Coman Inxalygazn optical emitters fabricated via substrate removal
US6680569B2 (en) * 1999-02-18 2004-01-20 Lumileds Lighting U.S. Llc Red-deficiency compensating phosphor light emitting device
US6351069B1 (en) * 1999-02-18 2002-02-26 Lumileds Lighting, U.S., Llc Red-deficiency-compensating phosphor LED
US6502956B1 (en) * 1999-03-25 2003-01-07 Leotek Electronics Corporation Light emitting diode lamp with individual LED lenses
US6838705B1 (en) * 1999-03-29 2005-01-04 Nichia Corporation Nitride semiconductor device
JP3567790B2 (ja) 1999-03-31 2004-09-22 豊田合成株式会社 Iii族窒化物系化合物半導体発光素子
JP3656456B2 (ja) * 1999-04-21 2005-06-08 日亜化学工業株式会社 窒化物半導体素子
DE19918370B4 (de) 1999-04-22 2006-06-08 Osram Opto Semiconductors Gmbh LED-Weißlichtquelle mit Linse
US6257737B1 (en) 1999-05-20 2001-07-10 Philips Electronics Na Low-profile luminaire having a reflector for mixing light from a multi-color linear array of LEDs
US6222207B1 (en) 1999-05-24 2001-04-24 Lumileds Lighting, U.S. Llc Diffusion barrier for increased mirror reflectivity in reflective solderable contacts on high power LED chip
US6133589A (en) 1999-06-08 2000-10-17 Lumileds Lighting, U.S., Llc AlGaInN-based LED having thick epitaxial layer for improved light extraction
US6287947B1 (en) 1999-06-08 2001-09-11 Lumileds Lighting, U.S. Llc Method of forming transparent contacts to a p-type GaN layer
US6185051B1 (en) * 1999-06-23 2001-02-06 Read-Rite Corporation High numerical aperture optical focusing device for use in data storage systems
CN1190997C (zh) 1999-07-23 2005-02-23 电灯专利信托有限公司 光源的发光物质及其相关的光源
DE50016032D1 (de) * 1999-07-23 2010-12-30 Osram Gmbh Lichtquelle mit einer Leuchtstoffanordnung und Vergussmasse mit einer Leuchtstoffanordnung
DE19936605A1 (de) 1999-08-04 2001-02-15 Osram Opto Semiconductors Gmbh Transparente Gießharzmasse für SMT-fähige LED-Anwendungen mit hoher Temperatur und hohen Helligkeiten oder Leuchtstärken
JP2001053336A (ja) 1999-08-05 2001-02-23 Toyoda Gosei Co Ltd Iii族窒化物系化合物半導体発光素子
US6711200B1 (en) * 1999-09-07 2004-03-23 California Institute Of Technology Tuneable photonic crystal lasers and a method of fabricating the same
AU7617800A (en) 1999-09-27 2001-04-30 Lumileds Lighting U.S., Llc A light emitting diode device that produces white light by performing complete phosphor conversion
US6696703B2 (en) * 1999-09-27 2004-02-24 Lumileds Lighting U.S., Llc Thin film phosphor-converted light emitting diode device
US6686691B1 (en) * 1999-09-27 2004-02-03 Lumileds Lighting, U.S., Llc Tri-color, white light LED lamps
US6630691B1 (en) 1999-09-27 2003-10-07 Lumileds Lighting U.S., Llc Light emitting diode device comprising a luminescent substrate that performs phosphor conversion
US6812053B1 (en) 1999-10-14 2004-11-02 Cree, Inc. Single step pendeo- and lateral epitaxial overgrowth of Group III-nitride epitaxial layers with Group III-nitride buffer layer and resulting structures
US6361192B1 (en) * 1999-10-25 2002-03-26 Global Research & Development Corp Lens system for enhancing LED light output
US6420266B1 (en) 1999-11-02 2002-07-16 Alien Technology Corporation Methods for creating elements of predetermined shape and apparatuses using these elements
DE19952932C1 (de) 1999-11-03 2001-05-03 Osram Opto Semiconductors Gmbh LED-Weißlichtquelle mit breitbandiger Anregung
DE19955747A1 (de) 1999-11-19 2001-05-23 Osram Opto Semiconductors Gmbh Optische Halbleitervorrichtung mit Mehrfach-Quantentopf-Struktur
EP1104799A1 (en) 1999-11-30 2001-06-06 Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH Red emitting luminescent material
US6614056B1 (en) 1999-12-01 2003-09-02 Cree Lighting Company Scalable led with improved current spreading structures
US6515313B1 (en) * 1999-12-02 2003-02-04 Cree Lighting Company High efficiency light emitters with reduced polarization-induced charges
US6410942B1 (en) 1999-12-03 2002-06-25 Cree Lighting Company Enhanced light extraction through the use of micro-LED arrays
HK1048709A1 (zh) 1999-12-03 2003-04-11 Cree, Inc. 透过使用内置及外置光元件提高发光二极管(led)中的抽光效果
US6350041B1 (en) * 1999-12-03 2002-02-26 Cree Lighting Company High output radial dispersing lamp using a solid state light source
JP4032636B2 (ja) 1999-12-13 2008-01-16 日亜化学工業株式会社 発光素子
US6992334B1 (en) * 1999-12-22 2006-01-31 Lumileds Lighting U.S., Llc Multi-layer highly reflective ohmic contacts for semiconductor devices
US6486499B1 (en) 1999-12-22 2002-11-26 Lumileds Lighting U.S., Llc III-nitride light-emitting device with increased light generating capability
US6903376B2 (en) 1999-12-22 2005-06-07 Lumileds Lighting U.S., Llc Selective placement of quantum wells in flipchip light emitting diodes for improved light extraction
US6646292B2 (en) 1999-12-22 2003-11-11 Lumileds Lighting, U.S., Llc Semiconductor light emitting device and method
US6573537B1 (en) 1999-12-22 2003-06-03 Lumileds Lighting, U.S., Llc Highly reflective ohmic contacts to III-nitride flip-chip LEDs
US6514782B1 (en) * 1999-12-22 2003-02-04 Lumileds Lighting, U.S., Llc Method of making a III-nitride light-emitting device with increased light generating capability
USD453745S1 (en) * 1999-12-27 2002-02-19 Nichia Corporation Light emitting diode
USD490782S1 (en) 1999-12-27 2004-06-01 Nichia Corporation Light emitting diode
DE19963806C2 (de) 1999-12-30 2002-02-07 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen einer Leuchtdioden-Weißlichtquelle, Verwendung einer Kunststoff-Preßmasse zum Herstellen einer Leuchtioden-Weißlichtquelle und oberflächenmontierbare Leuchtdioden-Weißlichtquelle
TW512214B (en) 2000-01-07 2002-12-01 Koninkl Philips Electronics Nv Luminaire
US6504171B1 (en) * 2000-01-24 2003-01-07 Lumileds Lighting, U.S., Llc Chirped multi-well active region LED
DE10006738C2 (de) 2000-02-15 2002-01-17 Osram Opto Semiconductors Gmbh Lichtemittierendes Bauelement mit verbesserter Lichtauskopplung und Verfahren zu seiner Herstellung
DE10008584A1 (de) * 2000-02-24 2001-09-13 Osram Opto Semiconductors Gmbh Halbleiterbauelement für die Emission elektromagnetischer Strahlung und Verfahren zu dessen Herstellung
US6603243B2 (en) * 2000-03-06 2003-08-05 Teledyne Technologies Incorporated LED light source with field-of-view-controlling optics
EP1266255B1 (en) 2000-03-16 2008-11-12 Lee Products, Inc. Method of designing and manufacturing high efficiency non-imaging optics
JP3846150B2 (ja) 2000-03-27 2006-11-15 豊田合成株式会社 Iii族窒化物系化合物半導体素子および電極形成方法
US6443594B1 (en) 2000-03-31 2002-09-03 Koninklijke Philips Electronics N.V. One-piece lens arrays for collimating and focusing light and led light generators using same
US6777871B2 (en) 2000-03-31 2004-08-17 General Electric Company Organic electroluminescent devices with enhanced light extraction
DE10019665A1 (de) * 2000-04-19 2001-10-31 Osram Opto Semiconductors Gmbh Lumineszenzdiodenchip und Verfahren zu dessen Herstellung
US6603258B1 (en) 2000-04-24 2003-08-05 Lumileds Lighting, U.S. Llc Light emitting diode device that emits white light
WO2001084640A1 (de) * 2000-04-26 2001-11-08 Osram Opto Semiconductors Gmbh LUMINESZENZDIODENCHIP AUF DER BASIS VON GaN UND VERFAHREN ZUM HERSTELLEN EINES LUMINESZENZDIODENBAUELEMENTS
DE10020465A1 (de) 2000-04-26 2001-11-08 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement mit Lumineszenzkonversionselement
US6814470B2 (en) 2000-05-08 2004-11-09 Farlight Llc Highly efficient LED lamp
TWI289944B (en) 2000-05-26 2007-11-11 Osram Opto Semiconductors Gmbh Light-emitting-diode-element with a light-emitting-diode-chip
DE10026435A1 (de) * 2000-05-29 2002-04-18 Osram Opto Semiconductors Gmbh Kalzium-Magnesium-Chlorosilikat-Leuchtstoff und seine Anwendung bei Lumineszenz-Konversions-LED
CN1203557C (zh) * 2000-05-29 2005-05-25 电灯专利信托有限公司 基于发光二极管的发射白光的照明设备
DE10027206A1 (de) * 2000-05-31 2001-12-13 Osram Opto Semiconductors Gmbh Alterungsstabile Epoxidharzsysteme, daraus hergestellte Formstoffe und Bauelemente und deren Verwendung
US6526082B1 (en) * 2000-06-02 2003-02-25 Lumileds Lighting U.S., Llc P-contact for GaN-based semiconductors utilizing a reverse-biased tunnel junction
DE10032246A1 (de) 2000-07-03 2002-01-17 Osram Opto Semiconductors Gmbh Lumineszenzdiodenchip auf der Basis von InGaN und Verfahren zu dessen Herstellung
JP3890860B2 (ja) * 2000-07-28 2007-03-07 豊田合成株式会社 照明装置
JP2004505172A (ja) * 2000-07-28 2004-02-19 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング 波長変換のためのルミネセンス変換ベースの発光ダイオード及び蛍光体
DE10036940A1 (de) 2000-07-28 2002-02-07 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh Lumineszenz-Konversions-LED
US6527411B1 (en) 2000-08-01 2003-03-04 Visteon Corporation Collimating lamp
DE10039433B4 (de) 2000-08-11 2017-10-26 Osram Opto Semiconductors Gmbh Halbleiterchip für die Optoelektronik
WO2002017371A1 (fr) 2000-08-24 2002-02-28 Toyoda Gosei Co., Ltd. Procede de reduction de resistance de semi-conducteur, dispositif pour reduire la resistance d'un semi-conducteur et element semi-conducteur
JP2002076434A (ja) 2000-08-28 2002-03-15 Toyoda Gosei Co Ltd 発光装置
US6946685B1 (en) 2000-08-31 2005-09-20 Lumileds Lighting U.S., Llc Light emitting semiconductor method and device
KR100344103B1 (ko) 2000-09-04 2002-07-24 에피밸리 주식회사 질화갈륨계 결정 보호막을 형성한 반도체 소자 및 그 제조방법
US7064355B2 (en) 2000-09-12 2006-06-20 Lumileds Lighting U.S., Llc Light emitting diodes with improved light extraction efficiency
US7053419B1 (en) 2000-09-12 2006-05-30 Lumileds Lighting U.S., Llc Light emitting diodes with improved light extraction efficiency
KR20010000545A (ko) 2000-10-05 2001-01-05 유태경 펌핑 층이 집적된 다 파장 AlGaInN계 반도체LED 소자 및 그 제조 방법
US6526201B1 (en) * 2000-10-12 2003-02-25 Delphi Technologies, Inc. Light transport coupler assembly
US6650044B1 (en) 2000-10-13 2003-11-18 Lumileds Lighting U.S., Llc Stenciling phosphor layers on light emitting diodes
US6534797B1 (en) * 2000-11-03 2003-03-18 Cree, Inc. Group III nitride light emitting devices with gallium-free layers
DE10054966A1 (de) 2000-11-06 2002-05-16 Osram Opto Semiconductors Gmbh Bauelement für die Optoelektronik
WO2002041364A2 (en) 2000-11-16 2002-05-23 Emcore Corporation Led packages having improved light extraction
KR100763957B1 (ko) * 2000-12-01 2007-10-05 삼성테크윈 주식회사 테이프 피더의 커버 테이프 포밍 방법 및, 커버 테이프 포밍 기구
US6768525B2 (en) 2000-12-01 2004-07-27 Lumileds Lighting U.S. Llc Color isolated backlight for an LCD
US6888997B2 (en) 2000-12-05 2005-05-03 Eastman Kodak Company Waveguide device and optical transfer system for directing light to an image plane
US6547416B2 (en) 2000-12-21 2003-04-15 Koninklijke Philips Electronics N.V. Faceted multi-chip package to provide a beam of uniform white light from multiple monochrome LEDs
JP5110744B2 (ja) 2000-12-21 2012-12-26 フィリップス ルミレッズ ライティング カンパニー リミテッド ライアビリティ カンパニー 発光装置及びその製造方法
US6547423B2 (en) 2000-12-22 2003-04-15 Koninklijke Phillips Electronics N.V. LED collimation optics with improved performance and reduced size
AT410266B (de) 2000-12-28 2003-03-25 Tridonic Optoelectronics Gmbh Lichtquelle mit einem lichtemittierenden element
US6800876B2 (en) 2001-01-16 2004-10-05 Cree, Inc. Group III nitride LED with undoped cladding layer (5000.137)
US6906352B2 (en) 2001-01-16 2005-06-14 Cree, Inc. Group III nitride LED with undoped cladding layer and multiple quantum well
US7255451B2 (en) 2002-09-20 2007-08-14 Donnelly Corporation Electro-optic mirror cell
MY131962A (en) 2001-01-24 2007-09-28 Nichia Corp Light emitting diode, optical semiconductor device, epoxy resin composition suited for optical semiconductor device, and method for manufacturing the same
US6791119B2 (en) 2001-02-01 2004-09-14 Cree, Inc. Light emitting diodes including modifications for light extraction
US6794684B2 (en) 2001-02-01 2004-09-21 Cree, Inc. Reflective ohmic contacts for silicon carbide including a layer consisting essentially of nickel, methods of fabricating same, and light emitting devices including the same
US6746124B2 (en) 2001-02-06 2004-06-08 Robert E. Fischer Flashlight producing uniform high brightness
US6541800B2 (en) 2001-02-22 2003-04-01 Weldon Technologies, Inc. High power LED
US6576932B2 (en) 2001-03-01 2003-06-10 Lumileds Lighting, U.S., Llc Increasing the brightness of III-nitride light emitting devices
JP2002261333A (ja) 2001-03-05 2002-09-13 Toyoda Gosei Co Ltd 発光装置
US6833566B2 (en) * 2001-03-28 2004-12-21 Toyoda Gosei Co., Ltd. Light emitting diode with heat sink
US6489636B1 (en) 2001-03-29 2002-12-03 Lumileds Lighting U.S., Llc Indium gallium nitride smoothing structures for III-nitride devices
US6635904B2 (en) 2001-03-29 2003-10-21 Lumileds Lighting U.S., Llc Indium gallium nitride smoothing structures for III-nitride devices
US6987613B2 (en) * 2001-03-30 2006-01-17 Lumileds Lighting U.S., Llc Forming an optical element on the surface of a light emitting device for improved light extraction
US6417019B1 (en) 2001-04-04 2002-07-09 Lumileds Lighting, U.S., Llc Phosphor converted light emitting diode
US6844903B2 (en) * 2001-04-04 2005-01-18 Lumileds Lighting U.S., Llc Blue backlight and phosphor layer for a color LCD
US6841931B2 (en) * 2001-04-12 2005-01-11 Toyoda Gosei Co., Ltd. LED lamp
JP3891115B2 (ja) 2001-04-17 2007-03-14 日亜化学工業株式会社 発光装置
JP4048954B2 (ja) 2001-04-20 2008-02-20 日亜化学工業株式会社 発光デバイス
US7091656B2 (en) 2001-04-20 2006-08-15 Nichia Corporation Light emitting device
JP4050482B2 (ja) 2001-04-23 2008-02-20 豊田合成株式会社 半導体発光装置
US6607286B2 (en) 2001-05-04 2003-08-19 Lumileds Lighting, U.S., Llc Lens and lens cap with sawtooth portion for light emitting diode
US6598998B2 (en) 2001-05-04 2003-07-29 Lumileds Lighting, U.S., Llc Side emitting light emitting device
US6630689B2 (en) 2001-05-09 2003-10-07 Lumileds Lighting, U.S. Llc Semiconductor LED flip-chip with high reflectivity dielectric coating on the mesa
US7001058B2 (en) * 2001-05-16 2006-02-21 Ben-Zion Inditsky Ultra-thin backlight
US6630692B2 (en) 2001-05-29 2003-10-07 Lumileds Lighting U.S., Llc III-Nitride light emitting devices with low driving voltage
TW493287B (en) 2001-05-30 2002-07-01 Epistar Corp Light emitting diode structure with non-conductive substrate
US6958497B2 (en) 2001-05-30 2005-10-25 Cree, Inc. Group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures
JP3912044B2 (ja) * 2001-06-06 2007-05-09 豊田合成株式会社 Iii族窒化物系化合物半導体発光素子の製造方法
JP2002368263A (ja) * 2001-06-06 2002-12-20 Toyoda Gosei Co Ltd Iii族窒化物系化合物半導体発光素子
JP3763754B2 (ja) 2001-06-07 2006-04-05 豊田合成株式会社 Iii族窒化物系化合物半導体発光素子
JP3791765B2 (ja) 2001-06-08 2006-06-28 豊田合成株式会社 Iii族窒化物系化合物半導体発光素子
US6576488B2 (en) 2001-06-11 2003-06-10 Lumileds Lighting U.S., Llc Using electrophoresis to produce a conformally coated phosphor-converted light emitting semiconductor
US6642652B2 (en) 2001-06-11 2003-11-04 Lumileds Lighting U.S., Llc Phosphor-converted light emitting device
JP2002374007A (ja) * 2001-06-15 2002-12-26 Toyoda Gosei Co Ltd 発光装置
EP2034530B1 (en) 2001-06-15 2015-01-21 Cree, Inc. GaN based LED formed on a SiC substrate
US7029939B2 (en) 2001-06-18 2006-04-18 Toyoda Gosei Co., Ltd. P-type semiconductor manufacturing method and semiconductor device
DE10129785B4 (de) 2001-06-20 2010-03-18 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zu seiner Herstellung
JP2003017751A (ja) * 2001-06-28 2003-01-17 Toyoda Gosei Co Ltd 発光ダイオード
DE10131698A1 (de) 2001-06-29 2003-01-30 Osram Opto Semiconductors Gmbh Oberflächenmontierbares strahlungsemittierendes Bauelement und Verfahren zu dessen Herstellung
US6872986B2 (en) * 2001-07-04 2005-03-29 Nichia Corporation Nitride semiconductor device
US6563142B2 (en) 2001-07-11 2003-05-13 Lumileds Lighting, U.S., Llc Reducing the variation of far-field radiation patterns of flipchip light emitting diodes
US6740906B2 (en) 2001-07-23 2004-05-25 Cree, Inc. Light emitting diodes including modifications for submount bonding
US6888167B2 (en) 2001-07-23 2005-05-03 Cree, Inc. Flip-chip bonding of light emitting devices and light emitting devices suitable for flip-chip bonding
US7211833B2 (en) 2001-07-23 2007-05-01 Cree, Inc. Light emitting diodes including barrier layers/sublayers
US6747298B2 (en) 2001-07-23 2004-06-08 Cree, Inc. Collets for bonding of light emitting diodes having shaped substrates
JP4055503B2 (ja) * 2001-07-24 2008-03-05 日亜化学工業株式会社 半導体発光素子
US6955933B2 (en) 2001-07-24 2005-10-18 Lumileds Lighting U.S., Llc Light emitting diodes with graded composition active regions
DE10139723A1 (de) 2001-08-13 2003-03-13 Osram Opto Semiconductors Gmbh Strahlungsemittierender Chip und strahlungsemittierendes Bauelement
DE10139798B9 (de) 2001-08-14 2006-12-28 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Bauelement mit geometrisch optimierter Auskoppelstruktur
US20030036217A1 (en) * 2001-08-16 2003-02-20 Motorola, Inc. Microcavity semiconductor laser coupled to a waveguide
US7193299B2 (en) 2001-08-21 2007-03-20 Osram Opto Semiconductors Gmbh Conductor frame and housing for a radiation-emitting component, radiation-emitting component and display and/or illumination system using radiation-emitting components
US6737681B2 (en) 2001-08-22 2004-05-18 Nichia Corporation Light emitting device with fluorescent member excited by semiconductor light emitting element
US6878973B2 (en) 2001-08-23 2005-04-12 Lumileds Lighting U.S., Llc Reduction of contamination of light emitting devices
TWI262606B (en) * 2001-08-30 2006-09-21 Osram Opto Semiconductors Gmbh Radiation-emitting semiconductor-element and its production method
JP2003168823A (ja) 2001-09-18 2003-06-13 Toyoda Gosei Co Ltd Iii族窒化物系化合物半導体発光素子
US6637921B2 (en) 2001-09-28 2003-10-28 Osram Sylvania Inc. Replaceable LED bulb with interchangeable lens optic
DE10148227B4 (de) 2001-09-28 2015-03-05 Osram Opto Semiconductors Gmbh Strahlungsemittierender Halbleiterchip, Verfahren zu dessen Herstellung und strahlungsemittierendes Bauelement
JP3948650B2 (ja) * 2001-10-09 2007-07-25 アバゴ・テクノロジーズ・イーシービーユー・アイピー(シンガポール)プライベート・リミテッド 発光ダイオード及びその製造方法
US6688389B2 (en) 2001-10-12 2004-02-10 Halliburton Energy Services, Inc. Apparatus and method for locating joints in coiled tubing operations
WO2003034508A1 (fr) 2001-10-12 2003-04-24 Nichia Corporation Dispositif d'emission de lumiere et procede de fabrication de celui-ci
DE10152922B4 (de) 2001-10-26 2010-05-12 Osram Opto Semiconductors Gmbh Nitrid-basierendes Halbleiterbauelement
US6924596B2 (en) 2001-11-01 2005-08-02 Nichia Corporation Light emitting apparatus provided with fluorescent substance and semiconductor light emitting device, and method of manufacturing the same
US6833564B2 (en) 2001-11-02 2004-12-21 Lumileds Lighting U.S., Llc Indium gallium nitride separate confinement heterostructure light emitting devices
USD491538S1 (en) 2001-11-02 2004-06-15 Nichia Corporation Light emitting diode
KR100597532B1 (ko) 2001-11-05 2006-07-10 니치아 카가쿠 고교 가부시키가이샤 반도체 소자
US6683327B2 (en) * 2001-11-13 2004-01-27 Lumileds Lighting U.S., Llc Nucleation layer for improved light extraction from light emitting devices
US6610598B2 (en) 2001-11-14 2003-08-26 Solidlite Corporation Surface-mounted devices of light-emitting diodes with small lens
USD497349S1 (en) 2001-11-21 2004-10-19 Nichia Corporation Light emitting diode
USD478877S1 (en) 2001-11-21 2003-08-26 Nichia Corporation Light emitting diode
USD490387S1 (en) 2001-11-22 2004-05-25 Nichia Corporation Light emitting diode
USD482666S1 (en) 2001-11-30 2003-11-25 Nichia Corporation Light emitting diode (LED)
DE10158754A1 (de) 2001-11-30 2003-06-18 Osram Opto Semiconductors Gmbh Lichtemittierendes Halbleiderbauelement
US6819505B1 (en) 2003-09-08 2004-11-16 William James Cassarly Internally reflective ellipsoidal collector with projection lens
US6974234B2 (en) 2001-12-10 2005-12-13 Galli Robert D LED lighting assembly
AU2002359708A1 (en) 2001-12-14 2003-07-15 Digital Optics International Corporation Uniform illumination system
USD482337S1 (en) 2001-12-28 2003-11-18 Nichia Corporation Light emitting diode (LED)
USD534505S1 (en) * 2001-12-28 2007-01-02 Nichia Corporation Light emitting diode
USD565516S1 (en) 2001-12-28 2008-04-01 Nichia Corporation Light emitting diode
USD499384S1 (en) 2001-12-28 2004-12-07 Nichia Corporation Light emitting diode
USD557224S1 (en) 2001-12-28 2007-12-11 Nichia Corporation Light emitting diode
USD547736S1 (en) 2001-12-28 2007-07-31 Nichia Corporation Light emitting diode
US7153015B2 (en) 2001-12-31 2006-12-26 Innovations In Optics, Inc. Led white light optical system
TW530423B (en) * 2001-12-31 2003-05-01 Nanya Technology Corp Manufacturing method of emitter tips
JP2003209280A (ja) 2002-01-11 2003-07-25 Hitachi Cable Ltd 発光ダイオードアレイ
US6833277B2 (en) * 2002-01-24 2004-12-21 Massachusetts Institute Of Technology Method and system for field assisted statistical assembly of wafers
US6635503B2 (en) 2002-01-28 2003-10-21 Cree, Inc. Cluster packaging of light emitting diodes
KR100909733B1 (ko) 2002-01-28 2009-07-29 니치아 카가쿠 고교 가부시키가이샤 지지기판을 갖는 질화물 반도체소자 및 그 제조방법
USD477580S1 (en) 2002-01-30 2003-07-22 Nichia Corporation Light emitting diode
JP2003243700A (ja) 2002-02-12 2003-08-29 Toyoda Gosei Co Ltd Iii族窒化物系化合物半導体発光素子
US6623142B1 (en) 2002-02-15 2003-09-23 Delphi Technologies, Inc. Method and apparatus for correcting optical non-uniformities in a light emitting diode
US6924514B2 (en) 2002-02-19 2005-08-02 Nichia Corporation Light-emitting device and process for producing thereof
US6641284B2 (en) 2002-02-21 2003-11-04 Whelen Engineering Company, Inc. LED light assembly
JP4211359B2 (ja) 2002-03-06 2009-01-21 日亜化学工業株式会社 半導体装置の製造方法
US20040016718A1 (en) * 2002-03-20 2004-01-29 Ruey-Jen Hwu Micro-optic elements and method for making the same
KR100961322B1 (ko) 2002-03-22 2010-06-04 니치아 카가쿠 고교 가부시키가이샤 질화물 형광체와 그 제조 방법 및 발광 장치
DE10216394B3 (de) 2002-04-12 2004-01-08 Osram Opto Semiconductors Gmbh LED-Modul
EP1503428B1 (en) 2002-04-25 2011-08-17 Nichia Corporation Light-emitting device using fluorescent substance
US6791116B2 (en) 2002-04-30 2004-09-14 Toyoda Gosei Co., Ltd. Light emitting diode
USD490784S1 (en) 2002-05-01 2004-06-01 Nichia Corporation Light emitting diode
TWI226357B (en) 2002-05-06 2005-01-11 Osram Opto Semiconductors Gmbh Wavelength-converting reaction-resin, its production method, light-radiating optical component and light-radiating semiconductor-body
USD491899S1 (en) 2002-05-22 2004-06-22 Nichia Corporation Light emitting diode
JP4123828B2 (ja) 2002-05-27 2008-07-23 豊田合成株式会社 半導体発光素子
JP2004056088A (ja) 2002-05-31 2004-02-19 Toyoda Gosei Co Ltd Iii族窒化物系化合物半導体発光素子
US6870311B2 (en) * 2002-06-07 2005-03-22 Lumileds Lighting U.S., Llc Light-emitting devices utilizing nanoparticles
US6828596B2 (en) 2002-06-13 2004-12-07 Lumileds Lighting U.S., Llc Contacting scheme for large and small area semiconductor light emitting flip chip devices
US6679621B2 (en) * 2002-06-24 2004-01-20 Lumileds Lighting U.S., Llc Side emitting LED and lens
DE10229067B4 (de) 2002-06-28 2007-08-16 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zu dessen Herstellung
KR101030068B1 (ko) 2002-07-08 2011-04-19 니치아 카가쿠 고교 가부시키가이샤 질화물 반도체 소자의 제조방법 및 질화물 반도체 소자
DE10231325A1 (de) 2002-07-11 2004-02-12 Hella Kg Hueck & Co. Beleuchtungseinrichtung für Fahrzeuge
TW567618B (en) * 2002-07-15 2003-12-21 Epistar Corp Light emitting diode with adhesive reflection layer and manufacturing method thereof
KR100497121B1 (ko) 2002-07-18 2005-06-28 삼성전기주식회사 반도체 led 소자
JP2004055855A (ja) 2002-07-19 2004-02-19 Toyoda Gosei Co Ltd 通信装置
US6995032B2 (en) * 2002-07-19 2006-02-07 Cree, Inc. Trench cut light emitting diodes and methods of fabricating same
JP4289027B2 (ja) 2002-07-25 2009-07-01 豊田合成株式会社 発光装置
US6835957B2 (en) 2002-07-30 2004-12-28 Lumileds Lighting U.S., Llc III-nitride light emitting device with p-type active layer
JP4507532B2 (ja) 2002-08-27 2010-07-21 日亜化学工業株式会社 窒化物半導体素子
US7479662B2 (en) 2002-08-30 2009-01-20 Lumination Llc Coated LED with improved efficiency
US7244965B2 (en) 2002-09-04 2007-07-17 Cree Inc, Power surface mount light emitting die package
USD537047S1 (en) * 2002-09-05 2007-02-20 Nichia Corporation Light emitting diode
USD536672S1 (en) * 2002-09-05 2007-02-13 Nichia Corporation Light emitting diode
TWI292961B (en) 2002-09-05 2008-01-21 Nichia Corp Semiconductor device and an optical device using the semiconductor device
US6827475B2 (en) * 2002-09-09 2004-12-07 Steven Robert Vetorino LED light collection and uniform transmission system
JP2004111623A (ja) 2002-09-18 2004-04-08 Toyoda Gosei Co Ltd 発光装置
KR101182041B1 (ko) * 2002-09-19 2012-09-11 크리 인코포레이티드 경사 측벽을 포함하고 인광물질이 코팅된 발광 다이오드,및 그의 제조방법
US6682331B1 (en) * 2002-09-20 2004-01-27 Agilent Technologies, Inc. Molding apparatus for molding light emitting diode lamps
EP1413618A1 (en) 2002-09-24 2004-04-28 Osram Opto Semiconductors GmbH Luminescent material, especially for LED application
US6744077B2 (en) 2002-09-27 2004-06-01 Lumileds Lighting U.S., Llc Selective filtering of wavelength-converted semiconductor light emitting devices
JP2004127988A (ja) 2002-09-30 2004-04-22 Toyoda Gosei Co Ltd 白色発光装置
DE10245628A1 (de) 2002-09-30 2004-04-15 Osram Opto Semiconductors Gmbh Elektromagnetische Strahlung emittierender Halbleiterchip und Verfahren zu dessen Herstellung
US6896381B2 (en) 2002-10-11 2005-05-24 Light Prescriptions Innovators, Llc Compact folded-optics illumination lens
US6717353B1 (en) 2002-10-14 2004-04-06 Lumileds Lighting U.S., Llc Phosphor converted light emitting device
TW561637B (en) 2002-10-16 2003-11-11 Epistar Corp LED having contact layer with dual dopant state
US7009199B2 (en) 2002-10-22 2006-03-07 Cree, Inc. Electronic devices having a header and antiparallel connected light emitting diodes for producing light from AC current
US6730940B1 (en) 2002-10-29 2004-05-04 Lumileds Lighting U.S., Llc Enhanced brightness light emitting device spot emitter
JP2004153090A (ja) 2002-10-31 2004-05-27 Toyoda Gosei Co Ltd Iii族窒化物系化合物半導体発光素子及びその製造方法
JP2004153089A (ja) 2002-10-31 2004-05-27 Toyoda Gosei Co Ltd Iii族窒化物系化合物半導体発光素子及びその製造方法
TW578280B (en) 2002-11-21 2004-03-01 United Epitaxy Co Ltd Light emitting diode and package scheme and method thereof
USD502449S1 (en) * 2002-12-06 2005-03-01 Nichia Corporation Light emitting diode (LED)
US7692206B2 (en) 2002-12-06 2010-04-06 Cree, Inc. Composite leadframe LED package and method of making the same
US6897486B2 (en) 2002-12-06 2005-05-24 Ban P. Loh LED package die having a small footprint
JP4288940B2 (ja) 2002-12-06 2009-07-01 日亜化学工業株式会社 エポキシ樹脂組成物
US6876009B2 (en) 2002-12-09 2005-04-05 Nichia Corporation Nitride semiconductor device and a process of manufacturing the same
US7071494B2 (en) 2002-12-11 2006-07-04 Lumileds Lighting U.S. Llc Light emitting device with enhanced optical scattering
PL224992B1 (pl) 2002-12-11 2017-02-28 Ammono Spółka Z Ograniczoną Odpowiedzialnością Podłoże typu template dla urządzeń opto-elektrycznych lub elektrycznych oraz sposób jego wytwarzania
DE10259945A1 (de) 2002-12-20 2004-07-01 Tews, Walter, Dipl.-Chem. Dr.rer.nat.habil. Leuchtstoffe mit verlängerter Fluoreszenzlebensdauer
US6900474B2 (en) 2002-12-20 2005-05-31 Lumileds Lighting U.S., Llc Light emitting devices with compact active regions
US6986591B2 (en) 2002-12-20 2006-01-17 Hewlett-Packard Development Company, L.P. Non-imaging photon concentrator
TW571449B (en) 2002-12-23 2004-01-11 Epistar Corp Light-emitting device having micro-reflective structure
TW577184B (en) 2002-12-26 2004-02-21 Epistar Corp Light emitting layer having voltage/resistance interdependent layer
JP4397394B2 (ja) * 2003-01-24 2010-01-13 ディジタル・オプティクス・インターナショナル・コーポレイション 高密度照明システム
TW579610B (en) * 2003-01-30 2004-03-11 Epistar Corp Nitride light-emitting device having adhered reflective layer
JP2004235648A (ja) 2003-01-31 2004-08-19 Osram Opto Semiconductors Gmbh 光電子デバイス用の半導体基板及びその製造方法
US20040155565A1 (en) 2003-02-06 2004-08-12 Holder Ronald G. Method and apparatus for the efficient collection and distribution of light for illumination
JP2004266246A (ja) 2003-02-12 2004-09-24 Toyoda Gosei Co Ltd 発光装置
US6987281B2 (en) * 2003-02-13 2006-01-17 Cree, Inc. Group III nitride contact structures for light emitting devices
US6952024B2 (en) 2003-02-13 2005-10-04 Cree, Inc. Group III nitride LED with silicon carbide cladding layer
US7042020B2 (en) 2003-02-14 2006-05-09 Cree, Inc. Light emitting device incorporating a luminescent material
US7170097B2 (en) * 2003-02-14 2007-01-30 Cree, Inc. Inverted light emitting diode on conductive substrate
US6977396B2 (en) 2003-02-19 2005-12-20 Lumileds Lighting U.S., Llc High-powered light emitting device with improved thermal properties
CN100502060C (zh) 2003-02-19 2009-06-17 日亚化学工业株式会社 氮化物半导体元件
DE102004003135A1 (de) 2003-02-20 2004-09-02 Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH Beschichteter Leuchtstoff und lichtemittierende Vorrichtung mit derartigem Leuchtstoff
US9142734B2 (en) 2003-02-26 2015-09-22 Cree, Inc. Composite white light source and method for fabricating
EP1597764A1 (de) 2003-02-28 2005-11-23 Osram Opto Semiconductors GmbH Optoelektronisches bauteil mit strukturiert metallisiertem gehäusekörper, verfahren zur herstellung eines derartigen bauteils und verfahren zur strukturierten metallisierung eines kunststoff enthaltenden körpers
US6885033B2 (en) 2003-03-10 2005-04-26 Cree, Inc. Light emitting devices for light conversion and methods and semiconductor chips for fabricating the same
JP2004273798A (ja) * 2003-03-10 2004-09-30 Toyoda Gosei Co Ltd 発光デバイス
JP4182783B2 (ja) 2003-03-14 2008-11-19 豊田合成株式会社 Ledパッケージ
US7038370B2 (en) 2003-03-17 2006-05-02 Lumileds Lighting, U.S., Llc Phosphor converted light emitting device
TW594950B (en) * 2003-03-18 2004-06-21 United Epitaxy Co Ltd Light emitting diode and package scheme and method thereof
TWI249864B (en) 2003-03-20 2006-02-21 Toyoda Gosei Kk LED lamp
US20050018248A1 (en) * 2003-03-20 2005-01-27 Kia Silverbrook Display device having gravity-fed sheet feeder
TW587346B (en) 2003-03-28 2004-05-11 United Epitaxy Co Ltd Optoelectronic device made by semiconductor compound
JP4504662B2 (ja) 2003-04-09 2010-07-14 シチズン電子株式会社 Ledランプ
US6831302B2 (en) 2003-04-15 2004-12-14 Luminus Devices, Inc. Light emitting devices with improved extraction efficiency
US7083993B2 (en) 2003-04-15 2006-08-01 Luminus Devices, Inc. Methods of making multi-layer light emitting devices
US7074631B2 (en) 2003-04-15 2006-07-11 Luminus Devices, Inc. Light emitting device methods
US7105861B2 (en) 2003-04-15 2006-09-12 Luminus Devices, Inc. Electronic device contact structures
US20040207774A1 (en) 2003-04-17 2004-10-21 Gothard David L. Illumination apparatus for LCD/organic displays
DE10319274A1 (de) 2003-04-29 2004-12-02 Osram Opto Semiconductors Gmbh Lichtquelle
US7087936B2 (en) 2003-04-30 2006-08-08 Cree, Inc. Methods of forming light-emitting devices having an antireflective layer that has a graded index of refraction
US7005679B2 (en) * 2003-05-01 2006-02-28 Cree, Inc. Multiple component solid state white light
US20040222426A1 (en) 2003-05-07 2004-11-11 Bear Hsiung Light emitting diode module structure
CN1802755B (zh) 2003-05-09 2012-05-16 克里公司 通过离子注入进行隔离的led制造方法
JP2007504682A (ja) 2003-05-09 2007-03-01 クリー インコーポレイテッド 高Al含量AlGaN拡散バリアを有するIII族窒化物電子素子構造
US7108386B2 (en) 2003-05-12 2006-09-19 Illumitech Inc. High-brightness LED-phosphor coupling
US7021797B2 (en) 2003-05-13 2006-04-04 Light Prescriptions Innovators, Llc Optical device for repositioning and redistributing an LED's light
USD495822S1 (en) 2003-05-16 2004-09-07 Ccs, Inc. Attachment lens for LED
US6974229B2 (en) 2003-05-21 2005-12-13 Lumileds Lighting U.S., Llc Devices for creating brightness profiles
US7040774B2 (en) 2003-05-23 2006-05-09 Goldeneye, Inc. Illumination systems utilizing multiple wavelength light recycling
DE10324909B4 (de) 2003-05-30 2017-09-07 Osram Opto Semiconductors Gmbh Gehäuse für ein strahlungsemittierendes Bauelement, Verfahren zu dessen Herstellung und strahlungsemittierendes Bauelement
KR100542720B1 (ko) 2003-06-03 2006-01-11 삼성전기주식회사 GaN계 접합 구조
USD489690S1 (en) 2003-06-05 2004-05-11 Nichia Corporation Light emitting diode (LED)
TWI240434B (en) * 2003-06-24 2005-09-21 Osram Opto Semiconductors Gmbh Method to produce semiconductor-chips
US6921929B2 (en) * 2003-06-27 2005-07-26 Lockheed Martin Corporation Light-emitting diode (LED) with amorphous fluoropolymer encapsulant and lens
CA2634475C (en) * 2003-07-07 2014-05-20 Brasscorp Limited Led-based inspection lamp with improved collimation optics
EP1496551B1 (en) 2003-07-09 2013-08-21 Nichia Corporation Light emitting diode, method of manufacturing the same and lighting equipment incorporating the same
US7484871B2 (en) * 2003-07-29 2009-02-03 Valeo Sylvania Llc Single lens for LED signal light
US7009213B2 (en) * 2003-07-31 2006-03-07 Lumileds Lighting U.S., Llc Light emitting devices with improved light extraction efficiency
TWI223900B (en) 2003-07-31 2004-11-11 United Epitaxy Co Ltd ESD protection configuration and method for light emitting diodes
US6876008B2 (en) 2003-07-31 2005-04-05 Lumileds Lighting U.S., Llc Mount for semiconductor light emitting device
US6847057B1 (en) * 2003-08-01 2005-01-25 Lumileds Lighting U.S., Llc Semiconductor light emitting devices
US20050047729A1 (en) * 2003-08-29 2005-03-03 Vilgiate Anthony W. Optical transmission system and surface mount LED module for use therewith
USD510913S1 (en) 2003-09-09 2005-10-25 Nichia Corporation Light emitting diode
US7029935B2 (en) 2003-09-09 2006-04-18 Cree, Inc. Transmissive optical elements including transparent plastic shell having a phosphor dispersed therein, and methods of fabricating same
JP4232585B2 (ja) 2003-09-17 2009-03-04 豊田合成株式会社 発光装置
JP2005093900A (ja) * 2003-09-19 2005-04-07 Yazaki Corp Ledランプモジュール及びその製造方法
US6972438B2 (en) 2003-09-30 2005-12-06 Cree, Inc. Light emitting diode with porous SiC substrate and method for fabricating
US6819506B1 (en) 2003-09-30 2004-11-16 Infinity Trading Co. Ltd. Optical lens system for projecting light in a lambertion pattern from a high power led light source
US6942360B2 (en) 2003-10-01 2005-09-13 Enertron, Inc. Methods and apparatus for an LED light engine
EP1673573A4 (en) 2003-10-06 2016-01-13 Illumination Man Solutions Inc LUMINOUS DIODES USING IMPROVED LIGHT SOURCE AND IMPROVED METHOD FOR RECEIVING THE ENERGY EMITTED BY YOU
US7427805B2 (en) 2003-10-14 2008-09-23 Shen Ming-Tung Light-emitting diode chip package body and packaging method thereof
US7348600B2 (en) 2003-10-20 2008-03-25 Nichia Corporation Nitride semiconductor device, and its fabrication process
US7012279B2 (en) 2003-10-21 2006-03-14 Lumileds Lighting U.S., Llc Photonic crystal light emitting device
US7012281B2 (en) 2003-10-30 2006-03-14 Epistar Corporation Light emitting diode device and manufacturing method
JP4590905B2 (ja) 2003-10-31 2010-12-01 豊田合成株式会社 発光素子および発光装置
US7291529B2 (en) 2003-11-12 2007-11-06 Cree, Inc. Methods of processing semiconductor wafer backsides having light emitting devices (LEDs) thereon
US7402837B2 (en) 2003-11-12 2008-07-22 Cree, Inc. Light emitting devices with self aligned ohmic contacts
WO2005050748A1 (ja) * 2003-11-19 2005-06-02 Nichia Corporation 半導体素子及びその製造方法
JP2005203448A (ja) 2004-01-13 2005-07-28 Toyoda Gosei Co Ltd 発光装置
TWI270991B (en) 2004-01-16 2007-01-11 Epistar Corp Organic adhesive light-emitting device with ohmic metal contact
EP1708284B1 (en) 2004-01-20 2017-03-29 Nichia Corporation Semiconductor light-emitting device
US7080932B2 (en) 2004-01-26 2006-07-25 Philips Lumileds Lighting Company, Llc LED with an optical system to increase luminance by recycling emitted light
US7026653B2 (en) 2004-01-27 2006-04-11 Lumileds Lighting, U.S., Llc Semiconductor light emitting devices including current spreading layers
US6943381B2 (en) 2004-01-30 2005-09-13 Lumileds Lighting U.S., Llc III-nitride light-emitting devices with improved high-current efficiency
US7345297B2 (en) 2004-02-09 2008-03-18 Nichia Corporation Nitride semiconductor device
JP2005227339A (ja) 2004-02-10 2005-08-25 Seiko Epson Corp 光源装置、光源装置製造方法、及びプロジェクタ
TWI244220B (en) 2004-02-20 2005-11-21 Epistar Corp Organic binding light-emitting device with vertical structure
US7250715B2 (en) 2004-02-23 2007-07-31 Philips Lumileds Lighting Company, Llc Wavelength converted semiconductor light emitting devices
US7279724B2 (en) 2004-02-25 2007-10-09 Philips Lumileds Lighting Company, Llc Ceramic substrate for a light emitting diode where the substrate incorporates ESD protection
TWI244221B (en) 2004-03-01 2005-11-21 Epistar Corp Micro-reflector containing flip-chip light emitting device
KR100486614B1 (ko) 2004-03-05 2005-05-03 에피밸리 주식회사 낮은 접촉저항을 가지는 ⅲ-질화물반도체 발광소자
US7109521B2 (en) 2004-03-18 2006-09-19 Cree, Inc. Silicon carbide semiconductor structures including multiple epitaxial layers having sidewalls
JP2006066868A (ja) 2004-03-23 2006-03-09 Toyoda Gosei Co Ltd 固体素子および固体素子デバイス
TWI237402B (en) 2004-03-24 2005-08-01 Epistar Corp High luminant device
US7385226B2 (en) 2004-03-24 2008-06-10 Epistar Corporation Light-emitting device
US7202181B2 (en) 2004-03-26 2007-04-10 Cres, Inc. Etching of substrates of light emitting devices
US7439609B2 (en) 2004-03-29 2008-10-21 Cree, Inc. Doping of gallium nitride by solid source diffusion and resulting gallium nitride structures
US7355284B2 (en) 2004-03-29 2008-04-08 Cree, Inc. Semiconductor light emitting devices including flexible film having therein an optical element
US7326583B2 (en) * 2004-03-31 2008-02-05 Cree, Inc. Methods for packaging of a semiconductor light emitting device
US7279346B2 (en) 2004-03-31 2007-10-09 Cree, Inc. Method for packaging a light emitting device by one dispense then cure step followed by another
US7419912B2 (en) 2004-04-01 2008-09-02 Cree, Inc. Laser patterning of light emitting devices
TWI230474B (en) 2004-04-13 2005-04-01 United Epitaxy Co Ltd High luminance indium gallium aluminum nitride light emitting, device and manufacture method thereof
US6989555B2 (en) * 2004-04-21 2006-01-24 Lumileds Lighting U.S., Llc Strain-controlled III-nitride light emitting device
US7462861B2 (en) 2004-04-28 2008-12-09 Cree, Inc. LED bonding structures and methods of fabricating LED bonding structures
DE102004025610A1 (de) 2004-04-30 2005-11-17 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement mit mehreren Stromaufweitungsschichten und Verfahren zu dessen Herstellung
KR101426836B1 (ko) * 2004-05-05 2014-08-05 렌슬러 폴리테크닉 인스티튜트 고체-상태 에미터 및 하향-변환 재료를 이용한 고효율 광 소스
US7315119B2 (en) 2004-05-07 2008-01-01 Avago Technologies Ip (Singapore) Pte Ltd Light-emitting device having a phosphor particle layer with specific thickness
US7332365B2 (en) * 2004-05-18 2008-02-19 Cree, Inc. Method for fabricating group-III nitride devices and devices fabricated using method
WO2005112078A1 (en) 2004-05-19 2005-11-24 Epivalley Co., Ltd. METHOD FOR MATERIAL GROWTH OF GaN-BASED NITRIDE LAYER
US7064353B2 (en) 2004-05-26 2006-06-20 Philips Lumileds Lighting Company, Llc LED chip with integrated fast switching diode for ESD protection
US6956247B1 (en) 2004-05-26 2005-10-18 Lumileds Lighting U.S., Llc Semiconductor light emitting device including photonic band gap material and luminescent material
US7361938B2 (en) 2004-06-03 2008-04-22 Philips Lumileds Lighting Company Llc Luminescent ceramic for a light emitting device
US7280288B2 (en) 2004-06-04 2007-10-09 Cree, Inc. Composite optical lens with an integrated reflector
US7456499B2 (en) 2004-06-04 2008-11-25 Cree, Inc. Power light emitting die package with reflecting lens and the method of making the same
US7070300B2 (en) 2004-06-04 2006-07-04 Philips Lumileds Lighting Company, Llc Remote wavelength conversion in an illumination device
WO2006005062A2 (en) * 2004-06-30 2006-01-12 Cree, Inc. Chip-scale methods for packaging light emitting devices and chip-scale packaged light emitting devices
JP4511885B2 (ja) 2004-07-09 2010-07-28 Dowaエレクトロニクス株式会社 蛍光体及びled並びに光源
TWI299914B (en) * 2004-07-12 2008-08-11 Epistar Corp Light emitting diode with transparent electrically conductive layer and omni directional reflector
JP4622720B2 (ja) 2004-07-21 2011-02-02 日亜化学工業株式会社 窒化物半導体ウエハ又は窒化物半導体素子の製造方法
US7201495B2 (en) 2004-08-03 2007-04-10 Philips Lumileds Lighting Company, Llc Semiconductor light emitting device package with cover with flexible portion
US7405093B2 (en) 2004-08-18 2008-07-29 Cree, Inc. Methods of assembly for a semiconductor light emitting device package
US8075372B2 (en) * 2004-09-01 2011-12-13 Cabot Microelectronics Corporation Polishing pad with microporous regions
US7217583B2 (en) 2004-09-21 2007-05-15 Cree, Inc. Methods of coating semiconductor light emitting elements by evaporating solvent from a suspension
US7259402B2 (en) 2004-09-22 2007-08-21 Cree, Inc. High efficiency group III nitride-silicon carbide light emitting diode
US7372198B2 (en) 2004-09-23 2008-05-13 Cree, Inc. Semiconductor light emitting devices including patternable films comprising transparent silicone and phosphor
US7291865B2 (en) 2004-09-29 2007-11-06 Toyoda Gosei Co., Ltd. Light-emitting semiconductor device
JP2006108333A (ja) 2004-10-04 2006-04-20 Toyoda Gosei Co Ltd ランプ
US7274040B2 (en) 2004-10-06 2007-09-25 Philips Lumileds Lighting Company, Llc Contact and omnidirectional reflective mirror for flip chipped light emitting devices
EP1804301B1 (en) 2004-10-19 2017-01-11 Nichia Corporation Semiconductor element
US7256483B2 (en) 2004-10-28 2007-08-14 Philips Lumileds Lighting Company, Llc Package-integrated thin film LED
US7473933B2 (en) * 2004-10-29 2009-01-06 Ledengin, Inc. (Cayman) High power LED package with universal bonding pads and interconnect arrangement
US7404756B2 (en) 2004-10-29 2008-07-29 3M Innovative Properties Company Process for manufacturing optical and semiconductor elements
US7122839B2 (en) 2004-10-29 2006-10-17 Philips Lumileds Lighting Company, Llc Semiconductor light emitting devices with graded composition light emitting layers
US7432536B2 (en) 2004-11-04 2008-10-07 Cree, Inc. LED with self aligned bond pad
US7419839B2 (en) 2004-11-12 2008-09-02 Philips Lumileds Lighting Company, Llc Bonding an optical element to a light emitting device
US7344902B2 (en) 2004-11-15 2008-03-18 Philips Lumileds Lighting Company, Llc Overmolded lens over LED die
US7352011B2 (en) 2004-11-15 2008-04-01 Philips Lumileds Lighting Company, Llc Wide emitting lens for LED useful for backlighting
US7452737B2 (en) 2004-11-15 2008-11-18 Philips Lumileds Lighting Company, Llc Molded lens over LED die
JP4525309B2 (ja) 2004-11-19 2010-08-18 日立電線株式会社 Iii−v族窒化物系半導体基板の評価方法
US7253451B2 (en) 2004-11-29 2007-08-07 Epivalley Co., Ltd. III-nitride semiconductor light emitting device
US7335920B2 (en) * 2005-01-24 2008-02-26 Cree, Inc. LED with current confinement structure and surface roughening
TWI244228B (en) 2005-02-03 2005-11-21 United Epitaxy Co Ltd Light emitting device and manufacture method thereof
TWI292631B (en) 2005-02-05 2008-01-11 Epistar Corp Light emitting diode and method of the same
KR100631905B1 (ko) 2005-02-22 2006-10-11 삼성전기주식회사 질화물 단결정 기판 제조방법 및 이를 이용한 질화물 반도체 발광소자 제조방법
US7341878B2 (en) 2005-03-14 2008-03-11 Philips Lumileds Lighting Company, Llc Wavelength-converted semiconductor light emitting device
US20080266893A1 (en) 2005-04-06 2008-10-30 Tir Systems Ltd. Lighting Module With Compact Colour Mixing and Collimating Optics
US20070108459A1 (en) 2005-04-15 2007-05-17 Enfocus Engineering Corp Methods of Manufacturing Light Emitting Devices
US7446345B2 (en) 2005-04-29 2008-11-04 Cree, Inc. Light emitting devices with active layers that extend into opened pits
US7365371B2 (en) 2005-08-04 2008-04-29 Cree, Inc. Packages for semiconductor light emitting devices utilizing dispensed encapsulants
KR20070033801A (ko) 2005-09-22 2007-03-27 삼성전기주식회사 발광 다이오드 패키지 및 그 제조 방법
JP4715422B2 (ja) 2005-09-27 2011-07-06 日亜化学工業株式会社 発光装置
US20070116423A1 (en) 2005-11-22 2007-05-24 3M Innovative Properties Company Arrays of optical elements and method of manufacturing same
JP2009530798A (ja) 2006-01-05 2009-08-27 イルミテックス, インコーポレイテッド Ledから光を導くための独立した光学デバイス
WO2007080541A1 (en) 2006-01-16 2007-07-19 Philips Intellectual Property & Standards Gmbh Light emitting device with a eu-comprising phosphor material
TWI299917B (en) 2006-03-17 2008-08-11 Epistar Corp Light-emitting diode and method for manufacturing the same
JP4952233B2 (ja) 2006-04-19 2012-06-13 日亜化学工業株式会社 半導体装置
USD578226S1 (en) 2006-07-20 2008-10-07 Philips Lumileds Lighting Company, Llc LED package
US20080030974A1 (en) * 2006-08-02 2008-02-07 Abu-Ageel Nayef M LED-Based Illumination System
USD572209S1 (en) 2006-08-04 2008-07-01 Nichia Corporation Light emitting diode
EP2065931A4 (en) 2006-08-22 2013-02-27 Mitsubishi Chem Corp SEMICONDUCTOR ELEMENT ELEMENT, LIQUID TO FORM A SEMICONDUCTOR COMPONENT member, PROCESS FOR PRODUCING A SEMICONDUCTOR COMPONENT link and FLUID TO FORM A SEMICONDUCTOR COMPONENT member USING THE METHOD, FLUORESCENT COMPOSITION, SEMICONDUCTOR LIGHT ELEMENT, ILLUMINATION DEVICE AND IMAGE DISPLAY DEVICE
US7789531B2 (en) 2006-10-02 2010-09-07 Illumitex, Inc. LED system and method
US20090275157A1 (en) 2006-10-02 2009-11-05 Illumitex, Inc. Optical device shaping
US20090275266A1 (en) 2006-10-02 2009-11-05 Illumitex, Inc. Optical device polishing
USD582865S1 (en) 2007-06-11 2008-12-16 Cree, Inc. LED chip
USD571738S1 (en) 2007-06-14 2008-06-24 Philips Lumileds Lighting Company, Llc LED package
USD582866S1 (en) 2007-09-07 2008-12-16 Cree, Inc. LED chip
KR20090032207A (ko) 2007-09-27 2009-04-01 삼성전기주식회사 질화갈륨계 발광다이오드 소자
KR100882112B1 (ko) 2007-09-28 2009-02-06 삼성전기주식회사 반도체 발광소자 및 그의 제조방법
JP2009088519A (ja) 2007-09-28 2009-04-23 Samsung Electro-Mechanics Co Ltd 微細パターンの形成方法及びこれを用いた半導体発光素子の製造方法
CN101939849A (zh) 2008-02-08 2011-01-05 伊鲁米特克有限公司 用于发射器层成形的系统和方法
US8585253B2 (en) 2009-08-20 2013-11-19 Illumitex, Inc. System and method for color mixing lens array

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