JP2011122238A - スパッタリングターゲットおよびその製造方法、並びにトランジスタ - Google Patents
スパッタリングターゲットおよびその製造方法、並びにトランジスタ Download PDFInfo
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- JP2011122238A JP2011122238A JP2010250401A JP2010250401A JP2011122238A JP 2011122238 A JP2011122238 A JP 2011122238A JP 2010250401 A JP2010250401 A JP 2010250401A JP 2010250401 A JP2010250401 A JP 2010250401A JP 2011122238 A JP2011122238 A JP 2011122238A
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- oxide semiconductor
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- oxide
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Abstract
【解決手段】金属酸化物の焼結体を含み、その金属酸化物の焼結体の含有水素濃度が、たとえば、1×1016atoms/cm3未満と低いスパッタリングターゲットを用いて酸化物半導体膜を形成することで、H2Oに代表される水素原子を含む化合物、もしくは水素原子等の不純物の含有量が少ない酸化物半導体膜を成膜する。また、この酸化物半導体膜をトランジスタの活性層として適用する。
【選択図】図1
Description
本実施の形態では、本発明の一態様であるスパッタリングターゲット(以下、ターゲットとも表記する)の製造方法について図1を参照して説明する。図1は、本実施の形態に係るスパッタリングターゲットの製造方法の一例を示すフローチャートである。
本実施の形態は、実施の形態1のターゲットを適用して作製した半導体装置として、トランジスタを作製する例を示す。本実施の形態で示すトランジスタ410は、実施の形態1で示したスパッタリングターゲットを用いて作製した酸化物半導体膜を活性層として用いることができる。
ここで、酸化物半導体を用いたトランジスタの電導機構につき、図12乃至図15を用いて説明する。なお、以下の説明は一考察に過ぎず、これに基づいて発明の有効性が否定されるものではないことを付記する。
本実施の形態は、実施の形態1のターゲットを適用して作製した半導体装置として、トランジスタを作製する例を示す。なお、実施の形態2と同一部分または同様な機能を有する部分、および工程は、実施の形態2と同様とすればよく、その繰り返しの説明は省略する。また同じ箇所の詳細な説明も省略する。本実施の形態で示すトランジスタ460は、実施の形態1で示したスパッタリングターゲットを用いて作製した酸化物半導体膜を活性層として用いることができる。
本実施の形態は、実施の形態1のターゲットを適用して作製したトランジスタの他の例を示す。なお、実施の形態2と同一部分または同様な機能を有する部分、および工程は、実施の形態2と同様とすればよく、その繰り返しの説明は省略する。また同じ箇所の詳細な説明も省略する。本実施の形態で示すトランジスタ425、トランジスタ426は、実施の形態1で示したスパッタリングターゲットを用いて作製した酸化物半導体膜を活性層として用いることができる。
本実施の形態は、実施の形態1のターゲットを適用して作製したトランジスタの他の例を示す。本実施の形態で示すトランジスタ390は、実施の形態1で示したスパッタリングターゲットを用いて作製した酸化物半導体膜を活性層として用いることができる。
本実施の形態は、実施の形態1のターゲットを適用して作製したトランジスタの他の例を示す。本実施の形態で示すトランジスタ310は、実施の形態1で示したスパッタリングターゲットを用いて作製した酸化物半導体膜を活性層として用いることができる。
本実施の形態は、実施の形態1のターゲットを適用して作製したトランジスタの他の例を示す。本実施の形態で示すトランジスタ360は、実施の形態1で示したスパッタリングターゲットを用いて作製した酸化物半導体膜を活性層として用いることができる。
本実施の形態は、実施の形態1のターゲットを適用して作製したトランジスタの他の例を示す。本実施の形態で示すトランジスタ350は、実施の形態1で示したスパッタリングターゲットを用いて作製した酸化物半導体膜を活性層として用いることができる。
本実施の形態は、実施の形態1のターゲットを適用して作製したトランジスタの他の例を示す。本実施の形態で示すトランジスタ380は、実施の形態1で示したスパッタリングターゲットを用いて作製した酸化物半導体膜を活性層として用いることができる。
本実施の形態は、実施の形態1のターゲットを適用して作製したトランジスタの他の例を示す。本実施の形態で示すトランジスタは、実施の形態2乃至実施の形態9のトランジスタに適用することができる。
上記実施の形態2乃至実施の形態10で示したトランジスタ等の半導体装置を用いてさまざまな電子機器を完成することができる。実施の形態1で示したターゲットを用いて作製したトランジスタは、高純度化された酸化物半導体層を活性層として用いているため、オフ電流を低減させることができる。また、閾値電圧のばらつきの少ない、信頼性の高いトランジスタとすることが可能である。したがって、最終製品としての電子機器をスループット良く、良好な品質で作製することが可能になる。
302 ゲート絶縁層
303 保護絶縁層
310 トランジスタ
311 ゲート電極層
313 チャネル形成領域
314a 高抵抗ソース領域
314b 高抵抗ドレイン領域
315a ソース電極層
315b ドレイン電極層
316 酸化物絶縁層
320 基板
322 ゲート絶縁層
323 保護絶縁層
330 酸化物半導体膜
331 酸化物半導体層
332 酸化物半導体層
340 基板
342 ゲート絶縁層
343 保護絶縁層
345 酸化物半導体膜
346 酸化物半導体層
350 トランジスタ
351 ゲート電極層
352 酸化物半導体層
355a ソース電極層
355b ドレイン電極層
356 酸化物絶縁層
360 トランジスタ
361 ゲート電極層
362 酸化物半導体層
363 チャネル形成領域
364a 高抵抗ソース領域
364b 高抵抗ドレイン領域
365a ソース電極層
365b ドレイン電極層
366 酸化物絶縁層
370 基板
372a ゲート絶縁層
372b ゲート絶縁層
373 保護絶縁層
380 トランジスタ
381 ゲート電極層
382 酸化物半導体層
385a ソース電極層
385b ドレイン電極層
386 酸化物絶縁層
390 トランジスタ
391 ゲート電極層
392 酸化物半導体層
393 酸化物半導体膜
394 基板
395a ソース電極層
395b ドレイン電極層
396 酸化物絶縁層
397 ゲート絶縁層
398 保護絶縁層
399 酸化物半導体層
400 基板
402 ゲート絶縁層
407 絶縁層
410 トランジスタ
411 ゲート電極層
412 酸化物半導体層
414a 配線層
414b 配線層
415a ソース電極層またはドレイン電極層
415b ソース電極層またはドレイン電極層
420 基板
421a 開口
421b 開口
422 絶縁層
423 開口
424 導電層
425 トランジスタ
426 トランジスタ
427 導電層
450 基板
452 ゲート絶縁層
457 絶縁層
460 トランジスタ
461 ゲート電極層
461a ゲート電極層
461b ゲート電極層
462 酸化物半導体層
464 配線層
465a ソース電極層またはドレイン電極層
465a1 ソース電極層またはドレイン電極層
465a2 ソース電極層またはドレイン電極層
465b ソース電極層またはドレイン電極層
468 配線層
501 本体
502 筐体
503 表示部
504 キーボード
511 本体
512 スタイラス
513 表示部
514 操作ボタン
515 外部インターフェイス
520 電子書籍
521 筐体
523 筐体
525 表示部
527 表示部
531 電源
533 操作キー
535 スピーカー
537 軸部
540 筐体
541 筐体
542 表示パネル
543 スピーカー
544 マイクロフォン
545 操作キー
546 ポインティングデバイス
547 カメラ用レンズ
548 外部接続端子
549 太陽電池セル
550 外部メモリスロット
561 本体
563 接眼部
564 操作スイッチ
565 表示部(B)
566 バッテリー
567 表示部(A)
570 テレビジョン装置
571 筐体
573 表示部
575 スタンド
577 表示部
579 操作キー
580 リモコン操作機
Claims (6)
- 酸化物半導体膜を形成するスパッタリングターゲットであって、
酸化マグネシウム、酸化亜鉛、酸化アルミニウム、酸化ガリウム、酸化インジウム、または酸化スズから選ばれた少なくとも一の金属酸化物の焼結体を含み、
前記焼結体の含有水素濃度が1×1016atoms/cm3未満である、スパッタリングターゲット。 - 酸化物半導体膜を形成するスパッタリングターゲットであって、
酸化インジウム、酸化ガリウム、および酸化亜鉛の焼結体を含み、
前記焼結体の含有水素濃度が1×1016atoms/cm3未満である、スパッタリングターゲット。 - 請求項1または請求項2において、
酸化珪素を0.1重量%以上20重量%以下含むスパッタリングターゲット。 - 請求項1乃至請求項3のいずれか一に記載のスパッタリングターゲットを用いて作製された酸化物半導体層を活性層として含むトランジスタ。
- 複数の金属酸化物を混合し、焼成して前記金属酸化物の焼結体を形成し、
前記金属酸化物の焼結体を機械加工して、所望の形状を有するターゲットに成形し、
前記ターゲットを洗浄し、
洗浄後の前記ターゲットに、加熱処理を加えることを特徴とするスパッタリングターゲットの製造方法。 - 複数の金属酸化物を混合し、焼成して前記金属酸化物の焼結体を形成し、
前記金属酸化物の焼結体を機械加工して、所望の形状を有するターゲットに成形し、
前記ターゲットを洗浄し、
洗浄後の前記ターゲットを加熱処理し、
前記ターゲットと、バッキングプレートとをボンディングすることを特徴とするスパッタリングターゲットの製造方法。
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US8937020B2 (en) | 2015-01-20 |
JP6151332B2 (ja) | 2017-06-21 |
TWI542717B (zh) | 2016-07-21 |
US20110114944A1 (en) | 2011-05-19 |
TWI607512B (zh) | 2017-12-01 |
JP5839746B2 (ja) | 2016-01-06 |
US20150136594A1 (en) | 2015-05-21 |
KR20120094013A (ko) | 2012-08-23 |
KR20170072965A (ko) | 2017-06-27 |
JP5848427B2 (ja) | 2016-01-27 |
JP6995927B2 (ja) | 2022-02-04 |
JP6425769B2 (ja) | 2018-11-21 |
JP2020150270A (ja) | 2020-09-17 |
JP7470093B2 (ja) | 2024-04-17 |
JP5627098B2 (ja) | 2014-11-19 |
WO2011058882A1 (en) | 2011-05-19 |
US20130277895A1 (en) | 2013-10-24 |
TW201132780A (en) | 2011-10-01 |
JP2016066804A (ja) | 2016-04-28 |
JP2017152742A (ja) | 2017-08-31 |
JP2015043440A (ja) | 2015-03-05 |
US10083823B2 (en) | 2018-09-25 |
TW201630081A (zh) | 2016-08-16 |
JP2022033167A (ja) | 2022-02-28 |
JP2019014975A (ja) | 2019-01-31 |
JP2015061953A (ja) | 2015-04-02 |
US8492862B2 (en) | 2013-07-23 |
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