JP2011087286A - 半導体装置及び電子機器 - Google Patents
半導体装置及び電子機器 Download PDFInfo
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- JP2011087286A JP2011087286A JP2010206361A JP2010206361A JP2011087286A JP 2011087286 A JP2011087286 A JP 2011087286A JP 2010206361 A JP2010206361 A JP 2010206361A JP 2010206361 A JP2010206361 A JP 2010206361A JP 2011087286 A JP2011087286 A JP 2011087286A
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Images
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
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- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
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- G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
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Abstract
【解決手段】レベルシフタ回路によって、信号IN1の振幅電圧を大きくして、出力することができる。具体的には、信号IN1の振幅電圧を高くして、出力することができる。これにより、信号INを出力する回路(シフトレジスタ回路、デコーダ回路など)、の振幅電圧を小さくすることができる。そのため、該回路の消費電力を小さくすることができる。または、該回路を構成するトランジスタに印加される電圧を小さくすることができる。そのため、該トランジスタの劣化又は破壊を抑制することができる。
【選択図】図1
Description
本実施の形態では、半導体装置の一例、及びその半導体装置の駆動方法の一例について説明する。特に、レベルシフタ回路の一例、及びそのレベルシフタ回路の駆動方法の一例について説明する。
本実施の形態では、半導体装置の一例、及びその半導体装置の駆動方法の一例について説明する。本実施の形態の半導体装置は、実施の形態1の半導体装置を有するものとする。
さらに、期間Tcの前は、期間Tbであるため、電位Vaは、VDD1−Vth111を維持する。そのため、信号BOUTiがLレベルのままになる。
本実施の形態では、表示装置の一例及び表示装置が有する画素の一例について説明する。特に、液晶表示装置及び液晶表示装置が有する画素の一例について説明する。なお、本実施の形態の表示装置の駆動回路は、実施の形態1〜実施の形態2の半導体装置を有することが可能である。
本実施の形態では、半導体装置の一例及びその半導体装置の動作の一例について説明する。特に、信号線駆動回路の一例及びその信号線駆動回路の動作の一例について説明する。
本実施の形態では、半導体装置の構造の一例について説明する。特に、トランジスタの構造の一例について説明する。
本実施の形態では、表示装置の断面構造の一例について説明する。
本実施の形態では、半導体装置の一例及び半導体装置の作製工程の一例について説明する。特に、トランジスタの作製工程の一例と容量素子の作製工程の一例について説明する。特に、半導体層として、酸化物半導体を用いる場合の作製工程について説明する。
本実施の形態では、電子機器の例について説明する。
12 配線
13 配線
14 配線
15 配線
16 配線
21 配線
22 配線
23 配線
24 配線
25 配線
26 配線
27 配線
31 配線
32 配線
33 配線
34 配線
35 配線
36 配線
37 配線
38 配線
100 回路
110 回路
111 トランジスタ
112 トランジスタ
120 回路
121 トランジスタ
122 トランジスタ
123 トランジスタ
124 トランジスタ
125 容量素子
126 容量素子
13B 配線
16A 配線
16B 配線
16C 配線
300 回路
310 回路
311 トランジスタ
312 トランジスタ
313 トランジスタ
314 トランジスタ
315 トランジスタ
316 トランジスタ
317 トランジスタ
318 トランジスタ
319 トランジスタ
400 回路
401 回路
500 回路
501 回路
502 回路
1001 回路
1002 回路
1003 回路
1004 画素部
1005 端子
1006 基板
111d ダイオード
2001 回路
2002 回路
2003 トランジスタ
2004 配線
2005 配線
2007 画素部
2014 信号
2015 信号
3020 画素
3021 トランジスタ
3022 液晶素子
3023 容量素子
3031 配線
3032 配線
3033 配線
3034 電極
5000 筐体
5001 表示部
5002 表示部
5003 スピーカ
5004 LEDランプ
5005 操作キー
5006 接続端子
5007 センサ
5008 マイクロフォン
5009 スイッチ
5010 赤外線ポート
5011 記録媒体読込部
5012 支持部
5013 イヤホン
5014 アンテナ
5015 シャッターボタン
5016 受像部
5017 充電器
5018 支持台
5019 外部接続ポート
5020 ポインティングデバイス
5021 リーダ/ライタ
5022 筐体
5023 表示部
5024 リモコン装置
5025 スピーカ
5026 表示パネル
5027 ユニットバス
5028 表示パネル
5029 車体
5030 天井
5031 表示パネル
5032 ヒンジ部
5260 基板
5261 絶縁層
5262 半導体層
5263 絶縁層
5264 導電層
5265 絶縁層
5266 導電層
5267 絶縁層
5268 導電層
5269 絶縁層
5270 発光層
5271 導電層
5300 基板
5301 導電層
5302 絶縁層
5304 導電層
5305 絶縁層
5306 導電層
5307 液晶層
5308 導電層
5350 領域
5351 領域
5352 半導体基板
5353 領域
5354 絶縁層
5355 領域
5356 絶縁層
5357 導電層
5358 絶縁層
5359 導電層
5391 基板
5392 駆動回路
5393 画素部
5400 基板
5401 導電層
5402 絶縁層
5404 導電層
5405 絶縁層
5406 導電層
5407 液晶層
5408 絶縁層
5409 導電層
5410 基板
5420 基板
5421 導電層
5422 導電層
5423 絶縁層
5424 コンタクトホール
5425 酸化物半導体層
5429 導電層
5430 導電層
5431 導電層
5432 絶縁層
5433 導電層
5434 導電層
5435 絶縁層
5441 トランジスタ
5442 容量素子
1002a 回路
1002b 回路
2006A 走査線駆動回路
2006B 走査線駆動回路
5262a 領域
5262b 領域
5262c 領域
5262d 領域
5262e 領域
5303a 半導体層
5303b 半導体層
5403a 半導体層
5403b 半導体層
Claims (6)
- 第1のトランジスタと、第2のトランジスタと、第3のトランジスタと、第4のトランジスタと、第5のトランジスタと、第6のトランジスタと、を有し、
前記第1のトランジスタの第1の端子は、第1の配線と電気的に接続され、前記第1のトランジスタの第2の端子は、第2の配線と電気的に接続され、
前記第2のトランジスタの第1の端子は、第3の配線と電気的に接続され、前記第2のトランジスタの第2の端子は、前記第2の配線と電気的に接続され、
前記第3のトランジスタの第1の端子は、前記第1の配線と電気的に接続され、前記第3のトランジスタの第2の端子は、前記第1のトランジスタのゲートと電気的に接続され、前記第3のトランジスタのゲートは、第4の配線と電気的に接続され、
前記第4のトランジスタの第1の端子は、前記第3の配線と電気的に接続され、前記第4のトランジスタの第2の端子は、前記第1のトランジスタのゲートと電気的に接続され、前記第4のトランジスタのゲートは、前記第2のトランジスタのゲートと電気的に接続され、
前記第5のトランジスタの第1の端子は、第5の配線と電気的に接続され、前記第5のトランジスタの第2の端子は、前記第2のトランジスタのゲートと電気的に接続され、前記第5のトランジスタのゲートは、第6の配線と電気的に接続され、
前記第6のトランジスタの第1の端子は、前記第3の配線と電気的に接続され、前記第6のトランジスタの第2の端子は、前記第2のトランジスタのゲートと電気的に接続され、前記第6のトランジスタのゲートは、前記第4の配線と電気的に接続されることを特徴とする半導体装置。 - 請求項1において、
前記第4の配線には、第1の信号が入力され、
前記第2の配線からは、第2の信号が出力され、
前記第2の信号の振幅電圧は、前記第1の信号の振幅電圧よりも大きいことを特徴とする半導体装置。 - 請求項2において、
前記第1の信号はデジタル信号であり、
前記第2の信号はデジタル信号であり、
前記第1の信号がHレベルのとき、前記第2の信号はHレベルになり、
前記第1の信号がLレベルのとき、前記第2の信号はLレベルになることを特徴とする半導体装置。 - 請求項1乃至請求項3のいずれか一項において、
前記第4の配線は、シフトレジスタ回路と電気的に接続されることを特徴とする半導体装置。 - 請求項1乃至請求項4のいずれか一項において、
前記第1乃至第6のトランジスタは、酸化物半導体を用いたトランジスタであることを特徴とする半導体装置。 - 請求項1乃至請求項5のいずれか一項に記載の半導体装置を具備する電子機器。
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