JP2010027706A - 半導体装置および表示装置 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 140
- 230000017525 heat dissipation Effects 0.000 claims description 85
- 230000007423 decrease Effects 0.000 claims description 9
- 239000000463 material Substances 0.000 abstract description 89
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- 229920005989 resin Polymers 0.000 abstract description 22
- 238000005452 bending Methods 0.000 abstract description 18
- 230000000694 effects Effects 0.000 description 16
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
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- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
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- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
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Abstract
【解決手段】本発明に係るCOF10は、放熱材7が、その端部7a,7b周辺の領域ほど、大きな面積の開口部を設けるなどして、体積(面積)が少なくなるように設けられている。この構成により、COF10を折り曲げた際の折り曲げ性が向上し、この折り曲げによる応力が放熱材7の端部7a,7bに集中することを防いで、絶縁フィルム1上の配線2を断線から守ることができる。また、COF10を表示装置30に実装する際に、COF10と表示パネル15との接合に用いられる異方性導電樹脂の剥がれをなくすことができる。
【選択図】図2
Description
本発明の一実施形態について図1〜図7を用いて説明すると以下の通りである。
本発明の他の実施形態について図8を用いて説明すると以下の通りである。
2 配線
4 半導体素子
7 放熱材
8 スリット
10、10a COF(半導体装置)
30 表示装置
area1 領域(第1領域)
area2 領域(第2領域)
area3 領域(第3領域)
area4 領域(第4領域)
O1 開口部(第1開口部)
O2 開口部(第2開口部)
N 切り欠き
Claims (11)
- 絶縁フィルムと、
上記絶縁フィルムの一方の面に設けられた外部接続用端子と半導体素子接続用端子とを有する配線と、
上記絶縁フィルムの一方の面とは反対の面に設けられた放熱部材とを備え、上記配線における上記半導体素子接続用端子に半導体素子が接合される半導体装置において、
上記放熱部材における上記半導体素子およびその周辺に相当する領域である第1領域と比較して、当該第1領域と隣接する、上記放熱部材端部周辺に相当する領域である第2領域は、上記放熱部材の単位面積あたりの体積が少なく、かつ、
上記第2領域のうち、上記第1領域と隣接する領域である第3領域と比較して、当該第3領域と隣接する、上記放熱部材端部と隣接する領域である第4領域は、上記放熱部材の単位面積あたりの体積が少ないことを特徴とする半導体装置。 - 絶縁フィルムと、
上記絶縁フィルムの一方の面に設けられた外部接続用端子と半導体素子接続用端子とを有する配線と、
上記絶縁フィルムの一方の面とは反対の面に設けられた放熱部材とを備え、上記配線における上記半導体素子接続用端子に半導体素子が接合される半導体装置において、
上記放熱部材における上記半導体素子およびその周辺に相当する領域である第1領域と比較して、当該第1領域と隣接する、上記放熱部材端部周辺に相当する領域である第2領域は、上記放熱部材の単位長さあたりの面積が少なく、かつ、
上記第2領域のうち、上記第1領域と隣接する領域である第3領域と比較して、当該第3領域と隣接する、上記放熱部材端部と隣接する領域である第4領域は、上記放熱部材の単位長さあたりの面積が少ないことを特徴とする半導体装置。 - 上記第2領域には、上記第1領域には設けられていない、上記絶縁フィルムまで貫通する孔である、開口が複数設けられており、当該開口のうち、第1開口部および第2開口部がそれぞれ複数設けられており、
上記第1開口部は、上記第2開口部と比較して、小さい面積を有する開口であり、
上記第1開口部は、上記第3領域に設けられており、上記第2開口部は、上記第4領域に設けられていることを特徴とする請求項2に記載の半導体装置。 - 上記第2領域には、上記第1領域には設けられていない、上記絶縁フィルムまで貫通する孔である、開口が複数設けられており、当該開口のうち、第1開口部が複数設けられており、
上記第1開口部は、上記第3領域よりも上記第4領域に多数設けられていることを特徴とする請求項2に記載の半導体装置。 - 上記開口部は、それぞれ90°以下の角を有さない形状であることを特徴とする請求項3または4に記載の半導体装置。
- 上記開口部は、円形状、もしくは五角形以上の多角形の形状であることを特徴とする請求項5に記載の半導体装置。
- 上記第2領域には、上記第1領域には設けられていない、上記放熱部材端部に向かうにつれて上記第2領域の上記放熱部材の単位長さあたりの面積が少なくなる、複数の切り欠きが設けられていることを特徴とする請求項2に記載の半導体装置。
- 上記切り欠きは、上記第2領域のうち、上記放熱部材端部の中央部の領域を除いて設けられていることを特徴とする請求項7に記載の半導体装置。
- 上記切り欠きは、上記第2領域のうち、上記放熱部材端部の中央部の領域のみに設けられていることを特徴とする請求項7に記載の半導体装置。
- 上記放熱部材にスリットを設けていることを特徴とする請求項1〜9のいずれか一項に記載の半導体装置。
- 請求項1〜10のいずれか一項に記載の半導体装置を用いて実装した、表示装置を駆動するための表示装置駆動モジュールを備えていることを特徴とする表示装置。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
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JP2008184669A JP5236377B2 (ja) | 2008-07-16 | 2008-07-16 | 半導体装置および表示装置 |
CN2009801274453A CN102099905B (zh) | 2008-07-16 | 2009-07-07 | 半导体装置及显示装置 |
PCT/JP2009/062389 WO2010007916A1 (ja) | 2008-07-16 | 2009-07-07 | 半導体装置および表示装置 |
US12/737,431 US8344486B2 (en) | 2008-07-16 | 2009-07-07 | Semiconductor device and display apparatus |
KR1020117003122A KR101234461B1 (ko) | 2008-07-16 | 2009-07-07 | 반도체 장치 및 표시 장치 |
TW098123798A TWI396266B (zh) | 2008-07-16 | 2009-07-14 | 半導體裝置及顯示裝置 |
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JP2008184669A JP5236377B2 (ja) | 2008-07-16 | 2008-07-16 | 半導体装置および表示装置 |
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JP2010027706A true JP2010027706A (ja) | 2010-02-04 |
JP5236377B2 JP5236377B2 (ja) | 2013-07-17 |
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JP (1) | JP5236377B2 (ja) |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2010267754A (ja) * | 2009-05-14 | 2010-11-25 | Hitachi Cable Ltd | 半導体装置用テープキャリアおよびその製造方法 |
US8829508B2 (en) | 2012-08-16 | 2014-09-09 | Samsung Display Co., Ltd. | Organic light emitting display comprising a battery and a flexible printed circuit board |
CN111755389A (zh) * | 2020-06-29 | 2020-10-09 | 无锡睿勤科技有限公司 | 覆晶薄膜组件 |
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KR102017158B1 (ko) | 2013-03-04 | 2019-09-02 | 삼성전자주식회사 | 칩 온 필름 패키지 및 이를 갖는 표시 장치 |
EP2871672B1 (en) * | 2013-11-06 | 2018-09-26 | Nxp B.V. | Semiconductor device |
EP2871673A1 (en) | 2013-11-06 | 2015-05-13 | Nxp B.V. | Semiconductor device |
US9978663B2 (en) | 2015-12-09 | 2018-05-22 | Samsung Display Co., Ltd. | Integrated circuit assembly with heat spreader and method of making the same |
CN110189650A (zh) * | 2019-05-29 | 2019-08-30 | 厦门天马微电子有限公司 | 显示模组及显示装置 |
KR20210105723A (ko) | 2020-02-19 | 2021-08-27 | 삼성전자주식회사 | 칩-온-필름 패키지, 및 이를 포함하는 디스플레이 모듈 및 전자 장치 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS616848A (ja) * | 1984-06-20 | 1986-01-13 | Nec Corp | 配線基板 |
JPH05152353A (ja) * | 1991-11-27 | 1993-06-18 | Hitachi Cable Ltd | 半導体素子搭載用基板 |
JP2001085475A (ja) * | 1999-09-16 | 2001-03-30 | Toshiba Microelectronics Corp | テープフィルム及び半導体パッケージ |
JP2008028396A (ja) * | 2006-07-20 | 2008-02-07 | Samsung Electronics Co Ltd | Cof型半導体パッケージ |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5289039A (en) * | 1988-02-05 | 1994-02-22 | Citizen Watch Co., Ltd. | Resin encapsulated semiconductor device |
JP3063422B2 (ja) * | 1992-10-05 | 2000-07-12 | 富士電機株式会社 | 磁気誘導素子用コイル |
KR0128164B1 (ko) * | 1994-06-21 | 1998-04-02 | 황인길 | 반도체 패키지용 범용 히트스프레더 |
JPH0955459A (ja) * | 1995-06-06 | 1997-02-25 | Seiko Epson Corp | 半導体装置 |
JP2959480B2 (ja) * | 1996-08-12 | 1999-10-06 | 日本電気株式会社 | 半導体装置及びその製造方法 |
JPH10163386A (ja) * | 1996-12-03 | 1998-06-19 | Toshiba Corp | 半導体装置、半導体パッケージおよび実装回路装置 |
US5942795A (en) * | 1997-07-03 | 1999-08-24 | National Semiconductor Corporation | Leaded substrate carrier for integrated circuit device and leaded substrate carrier device assembly |
DE19736962B4 (de) * | 1997-08-25 | 2009-08-06 | Robert Bosch Gmbh | Anordnung, umfassend ein Trägersubstrat für Leistungsbauelemente und einen Kühlkörper sowie Verfahren zur Herstellung derselben |
US5901041A (en) * | 1997-12-02 | 1999-05-04 | Northern Telecom Limited | Flexible integrated circuit package |
US6156980A (en) * | 1998-06-04 | 2000-12-05 | Delco Electronics Corp. | Flip chip on circuit board with enhanced heat dissipation and method therefor |
JP2000294894A (ja) * | 1998-12-21 | 2000-10-20 | Seiko Epson Corp | 回路基板およびその製造方法ならびに回路基板を用いた表示装置および電子機器 |
TW413874B (en) * | 1999-04-12 | 2000-12-01 | Siliconware Precision Industries Co Ltd | BGA semiconductor package having exposed heat dissipation layer and its manufacturing method |
US6238954B1 (en) * | 1999-09-28 | 2001-05-29 | Intel Corporation | COF packaged semiconductor |
US6580159B1 (en) * | 1999-11-05 | 2003-06-17 | Amkor Technology, Inc. | Integrated circuit device packages and substrates for making the packages |
TW462121B (en) * | 2000-09-19 | 2001-11-01 | Siliconware Precision Industries Co Ltd | Heat sink type ball grid array package |
US6611055B1 (en) * | 2000-11-15 | 2003-08-26 | Skyworks Solutions, Inc. | Leadless flip chip carrier design and structure |
US6960824B1 (en) * | 2000-11-15 | 2005-11-01 | Skyworks Solutions, Inc. | Structure and method for fabrication of a leadless chip carrier |
US20020079572A1 (en) * | 2000-12-22 | 2002-06-27 | Khan Reza-Ur Rahman | Enhanced die-up ball grid array and method for making the same |
US7259448B2 (en) * | 2001-05-07 | 2007-08-21 | Broadcom Corporation | Die-up ball grid array package with a heat spreader and method for making the same |
JP3804861B2 (ja) * | 2002-08-29 | 2006-08-02 | 株式会社デンソー | 電気装置および配線基板 |
JP2004214258A (ja) * | 2002-12-27 | 2004-07-29 | Renesas Technology Corp | 半導体モジュール |
WO2004073064A1 (ja) * | 2003-02-17 | 2004-08-26 | Renesas Technology Corp. | 半導体装置 |
US20050051893A1 (en) * | 2003-09-05 | 2005-03-10 | Taiwan Semiconductor Manufacturing Co. | SBGA design for low-k integrated circuits (IC) |
JP4352964B2 (ja) * | 2004-03-29 | 2009-10-28 | 株式会社島津製作所 | 二次元像検出器 |
JP4437051B2 (ja) | 2004-04-01 | 2010-03-24 | イビデン株式会社 | フレックスリジッド配線板 |
JP4014591B2 (ja) | 2004-10-05 | 2007-11-28 | シャープ株式会社 | 半導体装置および電子機器 |
KR100652519B1 (ko) * | 2005-07-18 | 2006-12-01 | 삼성전자주식회사 | 듀얼 금속층을 갖는 테이프 배선기판 및 그를 이용한 칩 온필름 패키지 |
US7808013B2 (en) * | 2006-10-31 | 2010-10-05 | Cree, Inc. | Integrated heat spreaders for light emitting devices (LEDs) and related assemblies |
JP2008160019A (ja) * | 2006-12-26 | 2008-07-10 | Shinko Electric Ind Co Ltd | 電子部品 |
-
2008
- 2008-07-16 JP JP2008184669A patent/JP5236377B2/ja active Active
-
2009
- 2009-07-07 WO PCT/JP2009/062389 patent/WO2010007916A1/ja active Application Filing
- 2009-07-07 KR KR1020117003122A patent/KR101234461B1/ko active IP Right Grant
- 2009-07-07 CN CN2009801274453A patent/CN102099905B/zh active Active
- 2009-07-07 US US12/737,431 patent/US8344486B2/en active Active
- 2009-07-14 TW TW098123798A patent/TWI396266B/zh active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS616848A (ja) * | 1984-06-20 | 1986-01-13 | Nec Corp | 配線基板 |
JPH05152353A (ja) * | 1991-11-27 | 1993-06-18 | Hitachi Cable Ltd | 半導体素子搭載用基板 |
JP2001085475A (ja) * | 1999-09-16 | 2001-03-30 | Toshiba Microelectronics Corp | テープフィルム及び半導体パッケージ |
JP2008028396A (ja) * | 2006-07-20 | 2008-02-07 | Samsung Electronics Co Ltd | Cof型半導体パッケージ |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010267754A (ja) * | 2009-05-14 | 2010-11-25 | Hitachi Cable Ltd | 半導体装置用テープキャリアおよびその製造方法 |
US8829508B2 (en) | 2012-08-16 | 2014-09-09 | Samsung Display Co., Ltd. | Organic light emitting display comprising a battery and a flexible printed circuit board |
CN111755389A (zh) * | 2020-06-29 | 2020-10-09 | 无锡睿勤科技有限公司 | 覆晶薄膜组件 |
CN111755389B (zh) * | 2020-06-29 | 2022-06-21 | 无锡睿勤科技有限公司 | 覆晶薄膜组件 |
Also Published As
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US8344486B2 (en) | 2013-01-01 |
TWI396266B (zh) | 2013-05-11 |
TW201021168A (en) | 2010-06-01 |
JP5236377B2 (ja) | 2013-07-17 |
KR101234461B1 (ko) | 2013-02-18 |
CN102099905A (zh) | 2011-06-15 |
WO2010007916A1 (ja) | 2010-01-21 |
US20110108979A1 (en) | 2011-05-12 |
CN102099905B (zh) | 2012-11-14 |
KR20110039338A (ko) | 2011-04-15 |
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