JP2009194370A - レーザ処理装置、および半導体基板の作製方法 - Google Patents
レーザ処理装置、および半導体基板の作製方法 Download PDFInfo
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- JP2009194370A JP2009194370A JP2009001434A JP2009001434A JP2009194370A JP 2009194370 A JP2009194370 A JP 2009194370A JP 2009001434 A JP2009001434 A JP 2009001434A JP 2009001434 A JP2009001434 A JP 2009001434A JP 2009194370 A JP2009194370 A JP 2009194370A
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- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
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- 125000003118 aryl group Chemical group 0.000 description 1
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- BHVMAFDNFMTYLQ-UHFFFAOYSA-N azanylidyne(azanylidynegermyloxy)germane Chemical compound N#[Ge]O[Ge]#N BHVMAFDNFMTYLQ-UHFFFAOYSA-N 0.000 description 1
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- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 1
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- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
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- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 1
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- PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical compound [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
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- 230000008439 repair process Effects 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000010944 silver (metal) Substances 0.000 description 1
- 238000003746 solid phase reaction Methods 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
- 238000007725 thermal activation Methods 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- QQQSFSZALRVCSZ-UHFFFAOYSA-N triethoxysilane Chemical compound CCO[SiH](OCC)OCC QQQSFSZALRVCSZ-UHFFFAOYSA-N 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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Abstract
【解決手段】半導体基板に水素をドープして、水素を多量に含んだ損傷領域を形成する。単結晶半導体基板と支持基板を接合させた後、半導体基板を加熱して損傷領域で単結晶半導体基板を分離する。単結晶半導体基板から分離された単結晶半導体層の剥離面に加熱した高純度の窒素ガスを吹き付け、マイクロ波を照射しながら、レーザビームを照射する。レーザビームの照射により単結晶半導体層を溶融させることで、単結晶半導体層の表面の平坦性を向上させ、かつ再単結晶化させる。また窒素ガスとマイクロ波を照射により溶融時間を長くし、再単結晶化をより効果的に行う。
【選択図】図1
Description
本実施の形態では、基板の表面側及び裏面側の両方に加熱した窒素ガスを吹きつけてレーザ照射ができ、且つ、大面積基板を処理できる作製装置の一例を示す。尚、ここでは大面積基板上に、複数領域に区切られた単結晶シリコン層が形成されており、レーザ照射することでシリコンを溶融、再単結晶化し、単結晶シリコン層の表面を平坦化する処理を例示する。また、レーザ光照射の処理時間を短縮するため、一度に照射できるレーザ光の照射領域の長さLを長くし、大面積基板を一方向に移動させることでレーザ光の照射を完了させる作製装置とする。
・UHF 300MHz以上3GHz以下
・SHF 3GHz以上30GHz以下
・EHF 30GHz以上300GHz以下
代表的には2.45GHzを用いる。
本実施の形態では、図2に示したレーザ照射装置の構成の一例とは異なる例を図9に示す。
本実施の形態では、バッファ層を介して単結晶半導体層が支持基板に固定されている半導体基板について説明する。
図16乃至図18を用いて、本実施の形態では、半導体基板10を用いた半導体装置の作製方法の一例として、薄膜トランジスタ(TFT)を作製する方法を説明する。複数の薄膜トランジスタを組み合わせることで、各種の半導体装置が形成される。以下、図16乃至図18の断面図を用いて、TFTの作製方法を説明する。なお、本実施の形態では、nチャネル型のTFTとpチャネル型のTFTを同一基板上に作製する方法を説明する。
実施の形態4では、半導体装置の作製方法の一例として、TFTの作製方法を説明したが、半導体層付き基板に、TFTと共に容量、抵抗など各種の半導体素子を形成することで、高付加価値の半導体装置を作製することができる。本実施の形態では、図面を参照しながら半導体装置の具体的な態様を説明する。
本実施の形態では、無アルカリガラス基板(商品名AN100)を用いて複数のシリコン基板を固定した後、複数の単結晶シリコン層を形成する例を図25(A)に示す。
本実施の形態では、無アルカリガラス基板(商品名EAGLE2000(登録商標))を用いて複数のシリコン基板を固定した後、それぞれの単結晶半導体層の間を狭くする例を図25(B)を用いて示す。
図26を用いて、本実施の形態では、半導体基板10を用いた半導体装置の作製方法の一例としてトランジスタを作製する方法を説明する。複数の薄膜トランジスタを組み合わせることで、各種の半導体装置が形成される。なお、本実施の形態では、nチャネル型のトランジスタとpチャネル型のトランジスタを同一基板上に作製する方法を説明する。
本実施の形態では、本発明に係る半導体基板を用いた半導体装置の一例、およびその作製方法の一例について説明する。本実施の形態では、本発明に係る半導体基板を用いた半導体装置の一例として、トランジスタについて説明する。複数のトランジスタを組み合わせることで、各種の半導体装置が形成される。以下、図27〜図29の断面図を用いて、トランジスタの作製方法を説明する。なお、本実施の形態では、nチャネル型のトランジスタとpチャネル型のトランジスタを同一基板上に作製する方法を説明する。
20 半導体基板
100 支持基板
101 バッファ層
102 絶縁層
104 接合層
105 バッファ層
110 単結晶半導体基板
112 絶縁層
112a 絶縁膜
112b 絶縁膜
113 損傷領域
114 接合層
115 単結晶半導体層
116 単結晶半導体層
117 単結晶半導体基板
121 イオンビーム
122 レーザビーム
124 窒素ガス
200 マイクロプロセッサ
201 演算回路
202 演算回路制御部
203 命令解析部
204 割り込み制御部
205 タイミング制御部
206 レジスタ
207 レジスタ制御部
208 バスインターフェース
209 読み出し専用メモリ
210 メモリインターフェース
211 半導体装置
212 アナログ回路部
213 デジタル回路部
214 共振回路
215 整流回路
216 定電圧回路
217 リセット回路
218 発振回路
219 復調回路
220 変調回路
221 RFインターフェース
222 制御レジスタ
223 クロックコントローラ
224 インターフェース
225 中央処理ユニット
226 ランダムアクセスメモリ
227 読み出し専用メモリ
228 アンテナ
229 容量部
300 レーザビーム
301 レーザ発振器
302 支持基板
303 ステージ
304 コントローラ
305 光学系
306 気体噴出部
307 窒素ガス
308 気体貯蔵装置
309 気体供給装置
310 気体加熱装置
321 チューブ
322 チューブ
323 チューブ
331 窓
332 開口部
333 枠
334 空洞
340 セラミックサーミスタ
341 発熱体
342 電極
343 電極
344 孔
351 シリンドリカルレンズアレイ
352 シリンドリカルレンズアレイ
353 シリンドリカルレンズアレイ
354 シリンドリカルレンズ
355 シリンドリカルレンズ
356 ミラー
357 ダブレットシリンドリカルレンズ
358 領域
395 無アルカリガラス基板
396 バッファ層
397 単結晶半導体層
400 基板
401 選択用トランジスタ
402 表示制御用トランジスタ
403 半導体層
404 半導体層
405 走査線
406 信号線
407 電流供給線
408 画素電極
411 電極
412 ゲート電極
413 電極
427 層間絶縁膜
428 隔壁層
429 EL層
430 対向電極
431 対向基板
432 樹脂層
451 チャネル形成領域
452 不純物領域
510 基板
511 半導体層
512 チャネル形成領域
513 不純物領域
522 走査線
523 信号線
524 画素電極
525 TFT
527 層間絶縁膜
528 電極
529 柱状スペーサ
530 配向膜
532 対向基板
533 対向電極
534 配向膜
535 液晶層
603 半導体層
604 半導体層
606 絶縁膜
607 電極
608 高濃度不純物領域
609 低濃度不純物領域
610 チャネル形成領域
611 チャネル形成領域
612 サイドウォール
614 高濃度不純物領域
617 トランジスタ
618 トランジスタ
619 絶縁膜
620 絶縁膜
621 導電膜
622 導電膜
651 単結晶半導体層
652 単結晶半導体層
653 ゲート絶縁層
654 導電層
655 導電層
656 レジストマスク
657 レジストマスク
658 導電層
659 導電層
660 導電層
661 導電層
662 導電層
663 導電層
665 ゲート電極
666 ゲート電極
668 不純物元素
669 不純物領域
670 不純物領域
671 レジストマスク
672 レジストマスク
673 不純物元素
675 不純物領域
676 不純物領域
677 チャネル形成領域
679 レジストマスク
680 不純物元素
681 不純物領域
682 不純物領域
683 チャネル形成領域
684 絶縁層
685 絶縁層
686 導電層
800 無アルカリガラス基板
801 バリア層
802 接合層
803 単結晶シリコン層
810 無アルカリガラス基板
811 バリア層
812 接合層
813 単結晶シリコン層
820 透光性基板
821 バッファ層
822 単結晶シリコン層
823 レーザ光
825 ブロー手段
826 バリア層
827 接合層
901 携帯電話機
902 表示部
903 操作スイッチ
911 デジタルプレーヤー
912 表示部
913 操作部
914 イヤホン
921 電子ブック
922 表示部
923 操作スイッチ
1001 筐体
1002 筐体
1101 表示部
1102 スピーカー
1103 マイクロフォン
1104 操作キー
1105 ポインティングデバイス
1106 カメラ用レンズ
1107 外部接続端子
1201 キーボード
1202 外部メモリスロット
1203 裏面カメラ
1204 ライト
1205 イヤホン端子
1401 ステージ
1402 ステージ
1404 排気穴
1405 大面積基板
1406 単結晶半導体層
1407 光学装置
1408 落射ミラー
1409a ダブレットレンズ
1409b ダブレットレンズ
1410 石英窓
1411 照射領域
1412 流出穴
1415 チューブ
1416 気体加熱装置
1417 チューブ
1418 ガス発生装置
1419 チューブ
1420 気体貯蔵装置
1421 固定軸
1425 チューブ
1426 気体加熱装置
1427 チューブ
1428 ガス発生装置
1429 チューブ
1430 気体貯蔵装置
1501 発振器
1502 導波管
1503 誘電体
1504 スロット
1803 素子分離絶縁層
1804 保護層
1805 素子領域
1806 素子領域
1807a ゲート絶縁層
1807b ゲート絶縁層
1808a ゲート電極層
1808b ゲート電極層
1810 絶縁層
1815a 不純物領域
1815b 不純物領域
1816a 側壁絶縁層
1816b 側壁絶縁層
1817a 側壁絶縁層
1817b 側壁絶縁層
1819a 不純物領域
1819b 不純物領域
1820a 不純物領域
1820b 不純物領域
1821 チャネル形成領域
1822a シリサイド
1822b シリサイド
1823a シリサイド
1823b シリサイド
1824a 不純物領域
1824b 不純物領域
1826 チャネル形成領域
1827 層間絶縁層
1828 絶縁層
1831 pチャネル型電界効果トランジスタ
1832 nチャネル型電界効果トランジスタ
1840a 配線層
1840b 配線層
1840c 配線層
1840c 配線層
1840d 配線層
1841a 配線層
1841b 配線層
1841c 配線層
Claims (7)
- 支持基板の第一の面にバッファ層を介して固定された単結晶半導体層に、レーザ光を照射する手段と、
前記単結晶半導体層の前記レーザ光が照射される領域に、加熱された窒素ガスを吹きつける手段と、
前記支持基板の前記第一の面と反対側の第二の面から前記単結晶半導体層に、マイクロ波を照射する手段と、を有することを特徴とするレーザ処理装置。 - 請求項1において、
加熱された支持基板浮上用窒素ガスを前記支持基板の前記第二の面に吹きつけ、前記支持基板を浮上させ、搬送する手段を有することを特徴とするレーザ処理装置。 - 支持基板の第一の面にバッファ層を介して固定された単結晶半導体層へのレーザ光の照射、前記単結晶半導体層の前記レーザ光が照射される領域への加熱された窒素ガスの吹きつけ、及び前記支持基板の前記第一の面と反対側の第二の面から前記単結晶半導体層へのマイクロ波の照射を同時に行うことを特徴とする半導体基板の作製方法。
- 請求項3において、
前記レーザ光の照射、前記加熱された窒素ガスの吹きつけ、及び前記マイクロ波の照射によって、前記レーザ光が照射される領域の前記単結晶半導体層が溶融し、再単結晶化するまでの時間を、200ナノ秒以上1000ナノ秒以下とすることを特徴とする半導体基板の作製方法。 - 請求項3又は請求項4において、
前記窒素ガスに含まれる酸素濃度が30ppm以下であることを特徴とする半導体基板の作製方法。 - 請求項3乃至請求項5のいずれか一項において、
前記窒素ガスに含まれる水分濃度が30ppm以下であることを特徴とする半導体基板の作製方法。 - 請求項3乃至請求項6のいずれか一項において、
前記加熱された窒素ガスを吹き付けることにより、前記単結晶半導体層の温度を、400℃以上前記支持基板の歪点以下に加熱することを特徴とする半導体基板の作製方法。
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US20090181552A1 (en) | 2009-07-16 |
KR20090079178A (ko) | 2009-07-21 |
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