JP2009038354A - 発光装置 - Google Patents

発光装置 Download PDF

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Publication number
JP2009038354A
JP2009038354A JP2008168472A JP2008168472A JP2009038354A JP 2009038354 A JP2009038354 A JP 2009038354A JP 2008168472 A JP2008168472 A JP 2008168472A JP 2008168472 A JP2008168472 A JP 2008168472A JP 2009038354 A JP2009038354 A JP 2009038354A
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JP
Japan
Prior art keywords
electrode
source
film
semiconductor film
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2008168472A
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English (en)
Japanese (ja)
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JP2009038354A5 (enExample
Inventor
Shunpei Yamazaki
舜平 山崎
Yukie Suzuki
幸恵 鈴木
Hideaki Kuwabara
秀明 桑原
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2008168472A priority Critical patent/JP2009038354A/ja
Publication of JP2009038354A publication Critical patent/JP2009038354A/ja
Publication of JP2009038354A5 publication Critical patent/JP2009038354A5/ja
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6732—Bottom-gate only TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6745—Polycrystalline or microcrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0231—Manufacture or treatment of multiple TFTs using masks, e.g. half-tone masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

Landscapes

  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Shift Register Type Memory (AREA)
  • Weting (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
JP2008168472A 2007-07-06 2008-06-27 発光装置 Withdrawn JP2009038354A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008168472A JP2009038354A (ja) 2007-07-06 2008-06-27 発光装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007179091 2007-07-06
JP2008168472A JP2009038354A (ja) 2007-07-06 2008-06-27 発光装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2014224186A Division JP5953357B2 (ja) 2007-07-06 2014-11-04 半導体装置の作製方法

Publications (2)

Publication Number Publication Date
JP2009038354A true JP2009038354A (ja) 2009-02-19
JP2009038354A5 JP2009038354A5 (enExample) 2011-06-16

Family

ID=40213976

Family Applications (9)

Application Number Title Priority Date Filing Date
JP2008168472A Withdrawn JP2009038354A (ja) 2007-07-06 2008-06-27 発光装置
JP2014224186A Active JP5953357B2 (ja) 2007-07-06 2014-11-04 半導体装置の作製方法
JP2016116901A Withdrawn JP2016192561A (ja) 2007-07-06 2016-06-13 半導体装置
JP2017237549A Expired - Fee Related JP6640823B2 (ja) 2007-07-06 2017-12-12 半導体装置
JP2019236332A Withdrawn JP2020061573A (ja) 2007-07-06 2019-12-26 半導体装置
JP2022061805A Active JP7290769B2 (ja) 2007-07-06 2022-04-01 半導体装置
JP2023090807A Active JP7526854B2 (ja) 2007-07-06 2023-06-01 半導体装置
JP2024116932A Active JP7689609B2 (ja) 2007-07-06 2024-07-22 半導体装置
JP2025088227A Pending JP2025123242A (ja) 2007-07-06 2025-05-27 半導体装置

Family Applications After (8)

Application Number Title Priority Date Filing Date
JP2014224186A Active JP5953357B2 (ja) 2007-07-06 2014-11-04 半導体装置の作製方法
JP2016116901A Withdrawn JP2016192561A (ja) 2007-07-06 2016-06-13 半導体装置
JP2017237549A Expired - Fee Related JP6640823B2 (ja) 2007-07-06 2017-12-12 半導体装置
JP2019236332A Withdrawn JP2020061573A (ja) 2007-07-06 2019-12-26 半導体装置
JP2022061805A Active JP7290769B2 (ja) 2007-07-06 2022-04-01 半導体装置
JP2023090807A Active JP7526854B2 (ja) 2007-07-06 2023-06-01 半導体装置
JP2024116932A Active JP7689609B2 (ja) 2007-07-06 2024-07-22 半導体装置
JP2025088227A Pending JP2025123242A (ja) 2007-07-06 2025-05-27 半導体装置

Country Status (5)

Country Link
US (1) US8334537B2 (enExample)
JP (9) JP2009038354A (enExample)
KR (1) KR101465188B1 (enExample)
CN (1) CN101339960B (enExample)
TW (1) TWI493720B (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011151379A (ja) * 2009-12-21 2011-08-04 Semiconductor Energy Lab Co Ltd 薄膜トランジスタ
JP2023116450A (ja) * 2009-02-25 2023-08-22 株式会社半導体エネルギー研究所 表示装置、電子機器

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US9176353B2 (en) * 2007-06-29 2015-11-03 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
US8921858B2 (en) * 2007-06-29 2014-12-30 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
TWI456663B (zh) 2007-07-20 2014-10-11 Semiconductor Energy Lab 顯示裝置之製造方法
US8330887B2 (en) * 2007-07-27 2012-12-11 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and electronic device
KR101446249B1 (ko) 2007-12-03 2014-10-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치 제조방법
JP5627071B2 (ja) 2008-09-01 2014-11-19 株式会社半導体エネルギー研究所 半導体装置の作製方法
EP2184783B1 (en) 2008-11-07 2012-10-03 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device and method for manufacturing the same
JP5711463B2 (ja) * 2009-01-16 2015-04-30 株式会社半導体エネルギー研究所 薄膜トランジスタ
JP5564331B2 (ja) * 2009-05-29 2014-07-30 株式会社半導体エネルギー研究所 半導体装置の作製方法
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WO2011074407A1 (en) 2009-12-18 2011-06-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR101863941B1 (ko) * 2010-06-08 2018-06-04 삼성디스플레이 주식회사 오프셋 구조의 박막 트랜지스터
US9178071B2 (en) 2010-09-13 2015-11-03 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
WO2012090799A1 (en) 2010-12-28 2012-07-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP5784479B2 (ja) 2010-12-28 2015-09-24 株式会社半導体エネルギー研究所 半導体装置
US9443984B2 (en) 2010-12-28 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP5975635B2 (ja) 2010-12-28 2016-08-23 株式会社半導体エネルギー研究所 半導体装置
US8883556B2 (en) 2010-12-28 2014-11-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9911858B2 (en) 2010-12-28 2018-03-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8629445B2 (en) 2011-02-21 2014-01-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, manufacturing method thereof, and electronic appliance
JP2012209543A (ja) 2011-03-11 2012-10-25 Semiconductor Energy Lab Co Ltd 半導体装置
US9082663B2 (en) 2011-09-16 2015-07-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8952379B2 (en) 2011-09-16 2015-02-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2013039126A1 (en) 2011-09-16 2013-03-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR20140074352A (ko) * 2011-10-07 2014-06-17 어플라이드 머티어리얼스, 인코포레이티드 아르곤 가스 희석으로 실리콘 함유 층을 증착하기 위한 방법들
US9653614B2 (en) 2012-01-23 2017-05-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR20150011472A (ko) * 2013-07-23 2015-02-02 삼성디스플레이 주식회사 박막 트랜지스터 및 그 제조 방법
US9530808B2 (en) * 2013-09-12 2016-12-27 Boe Technology Group Co., Ltd. TFT array substrate, manufacturing method thereof, and display device
US9671084B2 (en) 2015-07-23 2017-06-06 Kuroi Electric Co., Ltd. Display device
TWI656815B (zh) * 2016-06-21 2019-04-11 中華精測科技股份有限公司 具有過孔電容結構的電路板及其製造方法
US9653537B1 (en) * 2016-09-26 2017-05-16 International Business Machines Corporation Controlling threshold voltage in nanosheet transistors
CN108106973B (zh) * 2017-12-18 2020-01-10 大连理工大学 一种基于透明光弹材料同时测量饱和颗粒介质应力和位移的方法
CN109037037B (zh) * 2018-09-27 2023-09-01 武汉华星光电技术有限公司 低温多晶硅层、薄膜晶体管及其制作方法
DE102019116103B4 (de) * 2019-06-13 2021-04-22 Notion Systems GmbH Verfahren zum Beschriften einer Leiterplatte durch Erzeugen von Schattierungen in einer funktionalen Lackschicht

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