JP2008541452A - ダイオードおよび抵抗率切り換え材料を備える不揮発性メモリセル - Google Patents

ダイオードおよび抵抗率切り換え材料を備える不揮発性メモリセル Download PDF

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Publication number
JP2008541452A
JP2008541452A JP2008511196A JP2008511196A JP2008541452A JP 2008541452 A JP2008541452 A JP 2008541452A JP 2008511196 A JP2008511196 A JP 2008511196A JP 2008511196 A JP2008511196 A JP 2008511196A JP 2008541452 A JP2008541452 A JP 2008541452A
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Prior art keywords
memory cell
diode
monolithic
conductor
memory array
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JP2008541452A5 (https=
Inventor
ハーナー，エス．ブラッド
クマー，タンメイ
ジェイ． ペティ，クリストファー
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サンディスク スリーディー，エルエルシー
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Priority claimed from US11/125,939 external-priority patent/US20060250836A1/en
Application filed by サンディスク スリーディー，エルエルシー filed Critical サンディスク スリーディー，エルエルシー
Publication of JP2008541452A publication Critical patent/JP2008541452A/ja
Publication of JP2008541452A5 publication Critical patent/JP2008541452A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H10B63/84—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays arranged in a direction perpendicular to the substrate, e.g. 3D cell arrays
    • H10B63/845—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays arranged in a direction perpendicular to the substrate, e.g. 3D cell arrays the switching components being connected to a common vertical conductor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5685—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using storage elements comprising metal oxide memory material, e.g. perovskites
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0007—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising metal oxide memory material, e.g. perovskites
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H10N70/8833—Binary metal oxides, e.g. TaOx
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/009—Write using potential difference applied between cell electrodes
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/10—Resistive cells; Technology aspects
    • G11C2213/15—Current-voltage curve
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/30—Resistive cell, memory material aspects
    • G11C2213/32—Material having simple binary metal oxide structure
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/30—Resistive cell, memory material aspects
    • G11C2213/34—Material includes an oxide or a nitride
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/71—Three dimensional array
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/72—Array wherein the access device being a diode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
JP2008511196A 2005-05-09 2006-05-05 ダイオードおよび抵抗率切り換え材料を備える不揮発性メモリセル Pending JP2008541452A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/125,939 US20060250836A1 (en) 2005-05-09 2005-05-09 Rewriteable memory cell comprising a diode and a resistance-switching material
US11/395,995 US7812404B2 (en) 2005-05-09 2006-03-31 Nonvolatile memory cell comprising a diode and a resistance-switching material
PCT/US2006/017376 WO2006121837A2 (en) 2005-05-09 2006-05-05 Nonvolatile memory cell comprising a diode and a resistance-switching material

Publications (2)

Publication Number Publication Date
JP2008541452A true JP2008541452A (ja) 2008-11-20
JP2008541452A5 JP2008541452A5 (https=) 2009-10-01

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JP2008511196A Pending JP2008541452A (ja) 2005-05-09 2006-05-05 ダイオードおよび抵抗率切り換え材料を備える不揮発性メモリセル

Country Status (7)

Country Link
US (4) US7812404B2 (https=)
EP (5) EP2256747A1 (https=)
JP (1) JP2008541452A (https=)
KR (1) KR101335383B1 (https=)
CN (2) CN102592666A (https=)
AT (1) ATE525726T1 (https=)
WO (1) WO2006121837A2 (https=)

Cited By (14)

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JP2008098413A (ja) * 2006-10-12 2008-04-24 Seiko Epson Corp 可変抵抗素子
JP2008141193A (ja) * 2006-11-21 2008-06-19 Samsung Electronics Co Ltd 不揮発性メモリ素子及びその製造方法
JP2008166768A (ja) * 2007-01-04 2008-07-17 Samsung Electronics Co Ltd 抵抗メモリ素子及びその製造方法
JP2009094483A (ja) * 2007-10-10 2009-04-30 Samsung Electronics Co Ltd クロスポイントメモリアレイ
JP2010010685A (ja) * 2008-06-25 2010-01-14 Samsung Electronics Co Ltd メモリ素子及びその製造方法
JP4536155B2 (ja) * 2008-07-11 2010-09-01 パナソニック株式会社 電流抑制素子、記憶素子、及びこれらの製造方法
JP2011065735A (ja) * 2009-09-18 2011-03-31 Toshiba Corp 不揮発性半導体記憶装置
JP2011204785A (ja) * 2010-03-24 2011-10-13 Toshiba Corp 不揮発性記憶装置
JP2011222929A (ja) * 2010-03-23 2011-11-04 Toshiba Corp 不揮発性記憶装置及びその製造方法
JP2012501038A (ja) * 2008-08-25 2012-01-12 サンディスク スリーディー，エルエルシー 区分データ線を有するメモリシステム
JP5306363B2 (ja) * 2008-09-09 2013-10-02 株式会社東芝 情報記録再生装置
KR101345588B1 (ko) * 2012-07-17 2013-12-31 한양대학교 에리카산학협력단 인 또는 붕소가 도핑된 Ａｕ－ＮｉＯ－Ａｕ 구조의 다층형 나노 와이어 및 이의 제조방법
JP2014191837A (ja) * 2013-03-26 2014-10-06 Toppan Printing Co Ltd 不揮発性メモリセルおよび不揮発性メモリ
JP2014194834A (ja) * 2013-03-28 2014-10-09 Toppan Printing Co Ltd 不揮発性メモリ素子、不揮発性メモリセルおよび不揮発性メモリ

Families Citing this family (226)

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US7800933B2 (en) * 2005-09-28 2010-09-21 Sandisk 3D Llc Method for using a memory cell comprising switchable semiconductor memory element with trimmable resistance
US7767499B2 (en) * 2002-12-19 2010-08-03 Sandisk 3D Llc Method to form upward pointing p-i-n diodes having large and uniform current
US7660181B2 (en) * 2002-12-19 2010-02-09 Sandisk 3D Llc Method of making non-volatile memory cell with embedded antifuse
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