FR1223418A - Dispositifs à semi-conducteur à deux bornes à résistance différentielle négative - Google Patents

Dispositifs à semi-conducteur à deux bornes à résistance différentielle négative

Info

Publication number
FR1223418A
FR1223418A FR783459A FR783459A FR1223418A FR 1223418 A FR1223418 A FR 1223418A FR 783459 A FR783459 A FR 783459A FR 783459 A FR783459 A FR 783459A FR 1223418 A FR1223418 A FR 1223418A
Authority
FR
France
Prior art keywords
semiconductor devices
negative differential
differential resistance
resistance semiconductor
terminal negative
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR783459A
Other languages
English (en)
Inventor
Marc Chappey
Jacques Lantieri
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to FR783459A priority Critical patent/FR1223418A/fr
Priority to FR807210A priority patent/FR76389E/fr
Priority to US860837A priority patent/US2971140A/en
Priority to GB4426459A priority patent/GB927625A/en
Application granted granted Critical
Publication of FR1223418A publication Critical patent/FR1223418A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Junction Field-Effect Transistors (AREA)
FR783459A 1959-01-07 1959-01-07 Dispositifs à semi-conducteur à deux bornes à résistance différentielle négative Expired FR1223418A (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR783459A FR1223418A (fr) 1959-01-07 1959-01-07 Dispositifs à semi-conducteur à deux bornes à résistance différentielle négative
FR807210A FR76389E (fr) 1959-01-07 1959-10-10 Dispositifs à semi-conducteur à deux bornes à résistance différentielle négative
US860837A US2971140A (en) 1959-01-07 1959-12-21 Two-terminal semi-conductor devices having negative differential resistance
GB4426459A GB927625A (en) 1959-01-07 1959-12-30 Improvements in or relating to semi-conductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR783459A FR1223418A (fr) 1959-01-07 1959-01-07 Dispositifs à semi-conducteur à deux bornes à résistance différentielle négative

Publications (1)

Publication Number Publication Date
FR1223418A true FR1223418A (fr) 1960-06-16

Family

ID=8709936

Family Applications (1)

Application Number Title Priority Date Filing Date
FR783459A Expired FR1223418A (fr) 1959-01-07 1959-01-07 Dispositifs à semi-conducteur à deux bornes à résistance différentielle négative

Country Status (2)

Country Link
US (1) US2971140A (fr)
FR (1) FR1223418A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1160544B (de) * 1959-08-29 1964-01-02 Intermetall Transistor mit einem als Kollektorzone dienenden Halbleiterkoerper eines Leitfaehigkeitstyps und einer zylinderfoermigen Erhebung auf der Oberflaeche und Verfahren zum Herstellen

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL123574C (fr) * 1959-05-27
FR1245720A (fr) * 1959-09-30 1960-11-10 Nouvelles structures pour transistor à effet de champ
NL122951C (fr) * 1961-08-28
US3268780A (en) * 1962-03-30 1966-08-23 Transitron Electronic Corp Semiconductor device
US3252003A (en) * 1962-09-10 1966-05-17 Westinghouse Electric Corp Unipolar transistor
US3296508A (en) * 1962-12-17 1967-01-03 Rca Corp Field-effect transistor with reduced capacitance between gate and channel
US3304470A (en) * 1963-03-14 1967-02-14 Nippon Electric Co Negative resistance semiconductor device utilizing tunnel effect
US3246214A (en) * 1963-04-22 1966-04-12 Siliconix Inc Horizontally aligned junction transistor structure
US7812404B2 (en) * 2005-05-09 2010-10-12 Sandisk 3D Llc Nonvolatile memory cell comprising a diode and a resistance-switching material
US7834338B2 (en) * 2005-11-23 2010-11-16 Sandisk 3D Llc Memory cell comprising nickel-cobalt oxide switching element
US7875871B2 (en) 2006-03-31 2011-01-25 Sandisk 3D Llc Heterojunction device comprising a semiconductor and a resistivity-switching oxide or nitride
US7829875B2 (en) 2006-03-31 2010-11-09 Sandisk 3D Llc Nonvolatile rewritable memory cell comprising a resistivity-switching oxide or nitride and an antifuse
US7808810B2 (en) * 2006-03-31 2010-10-05 Sandisk 3D Llc Multilevel nonvolatile memory cell comprising a resistivity-switching oxide or nitride and an antifuse
US8233308B2 (en) 2007-06-29 2012-07-31 Sandisk 3D Llc Memory cell that employs a selectively deposited reversible resistance-switching element and methods of forming the same
US7824956B2 (en) * 2007-06-29 2010-11-02 Sandisk 3D Llc Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same
US7902537B2 (en) * 2007-06-29 2011-03-08 Sandisk 3D Llc Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same
US7846785B2 (en) * 2007-06-29 2010-12-07 Sandisk 3D Llc Memory cell that employs a selectively deposited reversible resistance-switching element and methods of forming the same

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2754431A (en) * 1953-03-09 1956-07-10 Rca Corp Semiconductor devices
NL199921A (fr) * 1954-08-27
NL222571A (fr) * 1956-03-05 1900-01-01

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1160544B (de) * 1959-08-29 1964-01-02 Intermetall Transistor mit einem als Kollektorzone dienenden Halbleiterkoerper eines Leitfaehigkeitstyps und einer zylinderfoermigen Erhebung auf der Oberflaeche und Verfahren zum Herstellen

Also Published As

Publication number Publication date
US2971140A (en) 1961-02-07

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