CH397869A - Halbleiteranordnung - Google Patents

Halbleiteranordnung

Info

Publication number
CH397869A
CH397869A CH197760A CH197760A CH397869A CH 397869 A CH397869 A CH 397869A CH 197760 A CH197760 A CH 197760A CH 197760 A CH197760 A CH 197760A CH 397869 A CH397869 A CH 397869A
Authority
CH
Switzerland
Prior art keywords
semiconductor device
semiconductor
Prior art date
Application number
CH197760A
Other languages
English (en)
Inventor
Philips John
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of CH397869A publication Critical patent/CH397869A/de

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
    • H03K17/73—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region for dc voltages or currents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0817—Thyristors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12528—Semiconductor component

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Thyristors (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
CH197760A 1959-02-24 1960-02-22 Halbleiteranordnung CH397869A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US795296A US2967793A (en) 1959-02-24 1959-02-24 Semiconductor devices with bi-polar injection characteristics

Publications (1)

Publication Number Publication Date
CH397869A true CH397869A (de) 1965-08-31

Family

ID=25165198

Family Applications (1)

Application Number Title Priority Date Filing Date
CH197760A CH397869A (de) 1959-02-24 1960-02-22 Halbleiteranordnung

Country Status (5)

Country Link
US (1) US2967793A (de)
CH (1) CH397869A (de)
DE (1) DE1131329B (de)
FR (1) FR1249135A (de)
GB (1) GB932396A (de)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1208012C2 (de) * 1959-08-06 1966-10-20 Telefunken Patent Flaechentransistor fuer hohe Frequenzen mit einer Begrenzung der Emission des Emitters und Verfahren zum Herstellen
US3109758A (en) * 1959-10-26 1963-11-05 Bell Telephone Labor Inc Improved tunnel diode
US3189800A (en) * 1959-12-14 1965-06-15 Westinghouse Electric Corp Multi-region two-terminal semiconductor device
NL264274A (de) * 1960-05-02 1900-01-01
NL258408A (de) * 1960-06-10
US3124703A (en) * 1960-06-13 1964-03-10 Figure
US3210621A (en) * 1960-06-20 1965-10-05 Westinghouse Electric Corp Plural emitter semiconductor device
US3212033A (en) * 1960-10-25 1965-10-12 Westinghouse Electric Corp Integrated circuit semiconductor narrow band notch filter
US3210560A (en) * 1961-04-17 1965-10-05 Westinghouse Electric Corp Semiconductor device
US3196285A (en) * 1961-05-18 1965-07-20 Cievite Corp Photoresponsive semiconductor device
DE1294558B (de) * 1961-06-07 1969-05-08 Westinghouse Electric Corp Hochspannungsgleichrichter und Verfahren zum Herstellen
US3237062A (en) * 1961-10-20 1966-02-22 Westinghouse Electric Corp Monolithic semiconductor devices
DE1258983B (de) * 1961-12-05 1968-01-18 Telefunken Patent Verfahren zum Herstellen einer Halbleiteranordnung mit epitaktischer Schicht und mindestens einem pn-UEbergang
NL297002A (de) * 1962-08-23 1900-01-01
NL300210A (de) * 1962-11-14
US3246172A (en) * 1963-03-26 1966-04-12 Richard J Sanford Four-layer semiconductor switch with means to provide recombination centers
US3365627A (en) * 1963-06-18 1968-01-23 Sprague Electric Co Diode circuits and diodes therefor
DE1229650B (de) * 1963-09-30 1966-12-01 Siemens Ag Verfahren zum Herstellen eines Halbleiter-bauelementes mit pn-UEbergang nach der Planar-Diffusionstechnik
US3313952A (en) * 1963-10-25 1967-04-11 Cons Electronics Ind Phase sensitive switching element
FR85434E (fr) * 1963-12-12 1965-08-06 Comp Generale Electricite Perfectionnement aux dispositifs à semiconducteurs
US3293010A (en) * 1964-01-02 1966-12-20 Motorola Inc Passivated alloy diode
DE1564608B2 (de) * 1966-05-23 1976-11-18 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen eines transistors
GB1112985A (en) * 1966-08-09 1968-05-08 Standard Telephones Cables Ltd Improvements in or relating to crosspoint switches
US3638082A (en) * 1968-09-21 1972-01-25 Nippon Telegraph & Telephone Pnpn impatt diode having unequal electric field maxima
JP6981365B2 (ja) * 2018-05-17 2021-12-15 日本電信電話株式会社 光検出器

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2569347A (en) * 1948-06-26 1951-09-25 Bell Telephone Labor Inc Circuit element utilizing semiconductive material
US2754431A (en) * 1953-03-09 1956-07-10 Rca Corp Semiconductor devices
US2770761A (en) * 1954-12-16 1956-11-13 Bell Telephone Labor Inc Semiconductor translators containing enclosed active junctions
BE541575A (de) * 1954-09-27
FR1167588A (fr) * 1955-05-25 1958-11-26 Ibm Transistor haute fréquence
US2779877A (en) * 1955-06-17 1957-01-29 Sprague Electric Co Multiple junction transistor unit
AT202600B (de) * 1956-12-13 1959-03-10 Philips Nv Feldeffekt-Transistor und Verfahren zur Herstellung eines solchen Transistors

Also Published As

Publication number Publication date
GB932396A (en) 1963-07-24
US2967793A (en) 1961-01-10
FR1249135A (fr) 1960-12-23
DE1131329B (de) 1962-06-14

Similar Documents

Publication Publication Date Title
DK104185C (da) Halvlederapparat.
FR1245294A (fr) Dispositif semi-conducteur
CH397869A (de) Halbleiteranordnung
CH382859A (de) Halbleitergerät
CH400369A (de) Halbleiteranordnung
CH398719A (de) Thermoelektrische Einrichtung
CH356539A (de) Halbleitereinrichtung
CH361867A (de) Halbleitervorrichtung
FR1262976A (fr) Dispositifs semi-conducteurs
CH384080A (de) Halbleiteranordnung
CH382858A (de) Halbleiteranordnung
BE591529A (fr) Dispositifs semiconducteurs
CH386566A (de) Halbleitervorrichtung
FR1267686A (fr) Dispositif semi-conducteur
CH441508A (de) Halbleiteranordnung
CH392703A (de) Halbleiteranordnung
CH390401A (de) Halbleiteranordnung
CH391109A (de) Halbleiteranordnung
CH394400A (de) Halbleitervorrichtung
CH376188A (de) Halbleiteranordnung
CH391026A (de) Thermoelektrisches Gerät
CH380823A (de) Halbleiteranordnung
FR1268801A (fr) Dispositif semi-conducteur
FR1276525A (fr) Dispositif semi-conducteur
FR1229923A (fr) Dispositifs semi-conducteurs