GB1112985A - Improvements in or relating to crosspoint switches - Google Patents

Improvements in or relating to crosspoint switches

Info

Publication number
GB1112985A
GB1112985A GB35521/66A GB3552166A GB1112985A GB 1112985 A GB1112985 A GB 1112985A GB 35521/66 A GB35521/66 A GB 35521/66A GB 3552166 A GB3552166 A GB 3552166A GB 1112985 A GB1112985 A GB 1112985A
Authority
GB
United Kingdom
Prior art keywords
light
double injection
diodes
diode
fibre
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB35521/66A
Inventor
John Lytollis
Ian James Saunders
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STC PLC
Original Assignee
Standard Telephone and Cables PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Standard Telephone and Cables PLC filed Critical Standard Telephone and Cables PLC
Priority to GB35521/66A priority Critical patent/GB1112985A/en
Priority to US661754A priority patent/US3594728A/en
Priority to FR117215A priority patent/FR1535852A/en
Publication of GB1112985A publication Critical patent/GB1112985A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04Q—SELECTING
    • H04Q3/00—Selecting arrangements
    • H04Q3/42—Circuit arrangements for indirect selecting controlled by common circuits, e.g. register controller, marker
    • H04Q3/52—Circuit arrangements for indirect selecting controlled by common circuits, e.g. register controller, marker using static devices in switching stages, e.g. electronic switching arrangements
    • H04Q3/521—Circuit arrangements for indirect selecting controlled by common circuits, e.g. register controller, marker using static devices in switching stages, e.g. electronic switching arrangements using semiconductors in the switching stages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/1446—Devices controlled by radiation in a repetitive configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Electronic Switches (AREA)

Abstract

1,112,985. Crosspoint switches. STANDARD TELEPHONES & CABLES Ltd. 9 Aug., 1966, No. 35521/66. Heading H4K. [Also in Division H1] Crosspoint switch comprises a matrix of double injection diodes which are biased to a voltage level less than that required to make them conductive but are switched to their conductive state by incident light. The matrix of diodes may be formed on a common body of semi-conductor material (see Division H1). The light to turn on a diode may be derived by energizing the appropriate ones of an array of photo emitting diodes provided on one surface of a semi-conductor substrate which has the array of double injection diodes on its other surface or the light derived from an external source may be applied to the diode which is provided with a transparent or apertured electrode to allow the light access to the semiconductor material. Alternatively the light may be applied to the double injection diodes via light-conducting fibres, one end of each fibre being located adjacent a respective double injection diode and the other ends of the fibres being incorporated into a solid block of material. The end surfaces of the fibres incorporated in the block are coated with phosphor material and the block incorporated as the face of a cathode-ray tube. By appropriately indexing the cathode-ray beam the phosphor on the end of a fibre is caused to emit light which travels along the fibre to illuminate the respective double injection diode.
GB35521/66A 1966-08-09 1966-08-09 Improvements in or relating to crosspoint switches Expired GB1112985A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
GB35521/66A GB1112985A (en) 1966-08-09 1966-08-09 Improvements in or relating to crosspoint switches
US661754A US3594728A (en) 1966-08-09 1967-08-03 Double injection diode matrix switch
FR117215A FR1535852A (en) 1966-08-09 1967-08-08 Improvements to cross point switches

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB35521/66A GB1112985A (en) 1966-08-09 1966-08-09 Improvements in or relating to crosspoint switches

Publications (1)

Publication Number Publication Date
GB1112985A true GB1112985A (en) 1968-05-08

Family

ID=10378672

Family Applications (1)

Application Number Title Priority Date Filing Date
GB35521/66A Expired GB1112985A (en) 1966-08-09 1966-08-09 Improvements in or relating to crosspoint switches

Country Status (2)

Country Link
US (1) US3594728A (en)
GB (1) GB1112985A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3781806A (en) * 1969-12-15 1973-12-25 Nippon Telegraph & Telephone Semiconductor switching element and a semiconductor switching involving the same
JPH0581216A (en) * 1991-09-20 1993-04-02 Hitachi Ltd Parallel processor

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3125681A (en) * 1964-03-17 Electroluminescent-photoluminescent-photoresponsive apparatus
US2604496A (en) * 1951-02-08 1952-07-22 Westinghouse Electric Corp Semiconductor relay device
US3043988A (en) * 1955-04-27 1962-07-10 Hurvitz Hyman Two-dimensional displays
US2967793A (en) * 1959-02-24 1961-01-10 Westinghouse Electric Corp Semiconductor devices with bi-polar injection characteristics
US3118130A (en) * 1959-06-01 1964-01-14 Massachusetts Inst Technology Bilateral bistable semiconductor switching matrix
US3070701A (en) * 1959-07-14 1962-12-25 Sylvania Electric Prod Electroluminescent device
NL114033C (en) * 1959-10-02
US2995682A (en) * 1960-01-28 1961-08-08 Sylvania Electric Prod Switching circuit for use with electroluminescent display devices
US3024140A (en) * 1960-07-05 1962-03-06 Space Technology Lab Inc Nonlinear electrical arrangement
US3317712A (en) * 1962-10-03 1967-05-02 Rca Corp Integrated light sensing device
US3210548A (en) * 1962-11-15 1965-10-05 Honeywell Inc Semiconductor light position indicators and scanners
US3249764A (en) * 1963-05-31 1966-05-03 Gen Electric Forward biased negative resistance semiconductor devices
US3271591A (en) * 1963-09-20 1966-09-06 Energy Conversion Devices Inc Symmetrical current controlling device
DE1266353B (en) * 1964-03-13 1968-04-18 Bbc Brown Boveri & Cie Matrix-shaped arrangement of oxide layer diodes for use as manipulable read-only memory or information converter
US3358146A (en) * 1964-04-29 1967-12-12 Gen Electric Integrally constructed solid state light emissive-light responsive negative resistance device
US3434124A (en) * 1964-11-12 1969-03-18 Sperry Rand Corp Readout of a planar,apertured thinferromagnetic-film by the deflection of electrons passing therethrough
GB1095413A (en) * 1964-12-24
US3366802A (en) * 1965-04-06 1968-01-30 Fairchild Camera Instr Co Field effect transistor photosensitive modulator
US3424910A (en) * 1965-04-19 1969-01-28 Hughes Aircraft Co Switching circuit using a two-carrier negative resistance device

Also Published As

Publication number Publication date
US3594728A (en) 1971-07-20

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