JP2007534590A5 - - Google Patents

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Publication number
JP2007534590A5
JP2007534590A5 JP2007509835A JP2007509835A JP2007534590A5 JP 2007534590 A5 JP2007534590 A5 JP 2007534590A5 JP 2007509835 A JP2007509835 A JP 2007509835A JP 2007509835 A JP2007509835 A JP 2007509835A JP 2007534590 A5 JP2007534590 A5 JP 2007534590A5
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JP
Japan
Prior art keywords
intermediate layer
crucible
silicon
less
side wall
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JP2007509835A
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English (en)
Japanese (ja)
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JP2007534590A (ja
JP5059602B2 (ja
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Priority claimed from PCT/BE2005/000055 external-priority patent/WO2005106084A1/en
Publication of JP2007534590A publication Critical patent/JP2007534590A/ja
Publication of JP2007534590A5 publication Critical patent/JP2007534590A5/ja
Application granted granted Critical
Publication of JP5059602B2 publication Critical patent/JP5059602B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2007509835A 2004-04-29 2005-04-26 シリコン結晶化用坩堝 Expired - Fee Related JP5059602B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP04447105 2004-04-29
EP04447105.0 2004-04-29
PCT/BE2005/000055 WO2005106084A1 (en) 2004-04-29 2005-04-26 Crucible for the crystallization of silicon

Publications (3)

Publication Number Publication Date
JP2007534590A JP2007534590A (ja) 2007-11-29
JP2007534590A5 true JP2007534590A5 (enExample) 2008-04-03
JP5059602B2 JP5059602B2 (ja) 2012-10-24

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ID=34933027

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007509835A Expired - Fee Related JP5059602B2 (ja) 2004-04-29 2005-04-26 シリコン結晶化用坩堝

Country Status (15)

Country Link
US (1) US7378128B2 (enExample)
EP (1) EP1745164B1 (enExample)
JP (1) JP5059602B2 (enExample)
KR (1) KR101213928B1 (enExample)
CN (1) CN1946881B (enExample)
AT (1) ATE398196T1 (enExample)
DE (1) DE602005007484D1 (enExample)
ES (1) ES2306141T3 (enExample)
MX (1) MXPA06012509A (enExample)
NO (1) NO339723B1 (enExample)
PL (1) PL1745164T3 (enExample)
RU (1) RU2355832C2 (enExample)
TW (1) TWI361174B (enExample)
UA (1) UA87842C2 (enExample)
WO (1) WO2005106084A1 (enExample)

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WO2013073204A1 (ja) * 2011-11-14 2013-05-23 シャープ株式会社 複合材、複合材の製造方法およびシリコンの精製装置
CN103506263B (zh) * 2011-12-30 2015-07-29 英利能源（中国）有限公司 多晶硅坩埚喷涂免烘干的方法及氮化硅涂层
CN103183478B (zh) * 2011-12-31 2015-07-08 浙江昱辉阳光能源有限公司 氮化硅坩埚涂层及其制备方法
JP2013227171A (ja) * 2012-04-26 2013-11-07 Kyodo Fine Ceramics Co Ltd 単結晶シリコン育成用るつぼ、単結晶シリコン育成用るつぼの製造方法、及び単結晶シリコンの製造方法
EP2864529A1 (en) * 2012-06-25 2015-04-29 Silicor Materials Inc. Lining for surfaces of a refractory crucible for purification of silicon melt and method of purification of the silicon melt using that crucible (s) for melting and further directional solidification
CN103774209B (zh) * 2012-10-26 2016-06-15 阿特斯(中国)投资有限公司 硅铸锭用坩埚及其涂层制备方法
JP6096653B2 (ja) * 2012-12-28 2017-03-15 京セラ株式会社 シリコン鋳造用鋳型およびその製造方法
RU2514354C1 (ru) * 2013-02-27 2014-04-27 Общество с ограниченной ответственностью "Обнинский Внедренческий Центр "Перспективные технологии" Способ получения изделий из пористых керамических и волокнистых материалов на основе кварцевого стекла
JP6355096B2 (ja) * 2013-07-31 2018-07-11 国立大学法人山口大学 撥液性複合部材
CN103420618A (zh) * 2013-09-05 2013-12-04 蠡县英利新能源有限公司 太阳能电池坩埚及其喷涂方法
FR3010716B1 (fr) * 2013-09-16 2015-10-09 Commissariat Energie Atomique Substrat pour la solidification de lingot de silicium
FR3010715B1 (fr) * 2013-09-16 2017-03-10 Commissariat Energie Atomique Substrat a revetement peu permeable pour solidification de silicium
EP2982780B1 (de) 2014-08-04 2019-12-11 Heraeus Quarzglas GmbH & Co. KG Verfahren zur herstellung eines siliziumblocks, zur verfahrensdurchführung geeignete kokille aus quarzglas oder quarzgut sowie verfahren für deren herstellung
US10658222B2 (en) 2015-01-16 2020-05-19 Lam Research Corporation Moveable edge coupling ring for edge process control during semiconductor wafer processing
CN105133011A (zh) * 2015-09-01 2015-12-09 晶科能源有限公司 一种多晶石英坩埚涂层及其制备方法
JP6567987B2 (ja) * 2016-02-24 2019-08-28 クアーズテック株式会社 石英ガラスルツボの製造方法
GB2550415A (en) * 2016-05-18 2017-11-22 Rec Solar Pte Ltd Silicon ingot growth crucible with patterned protrusion structured layer
US10450669B2 (en) 2016-07-29 2019-10-22 Auo Crystal Corporation Container for silicon ingot fabrication and manufacturing method thereof, and method for manufacturing crystalline silicon ingot
KR102182298B1 (ko) 2017-11-21 2020-11-25 램 리써치 코포레이션 하단 링 및 중간 에지 링
US11127572B2 (en) 2018-08-07 2021-09-21 Silfex, Inc. L-shaped plasma confinement ring for plasma chambers
KR20230106754A (ko) 2018-08-13 2023-07-13 램 리써치 코포레이션 에지 링 포지셔닝 및 센터링 피처들을 포함하는 플라즈마 시스 튜닝을 위한 교체가능한 에지 링 어셈블리 및/또는 접을 수 있는 에지 링 어셈블리
CN109955154A (zh) * 2019-04-15 2019-07-02 徐州协鑫太阳能材料有限公司 一种坩埚表面粗糙度的加工方法
CN110000708A (zh) * 2019-04-15 2019-07-12 徐州协鑫太阳能材料有限公司 一种改造坩埚粗糙度的方法
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