JP2009510387A5 - - Google Patents
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- Publication number
- JP2009510387A5 JP2009510387A5 JP2008533944A JP2008533944A JP2009510387A5 JP 2009510387 A5 JP2009510387 A5 JP 2009510387A5 JP 2008533944 A JP2008533944 A JP 2008533944A JP 2008533944 A JP2008533944 A JP 2008533944A JP 2009510387 A5 JP2009510387 A5 JP 2009510387A5
- Authority
- JP
- Japan
- Prior art keywords
- crucible
- silicon
- protective coating
- silica
- silicon nitride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 12
- 239000011230 binding agent Substances 0.000 claims 8
- 229910052581 Si3N4 Inorganic materials 0.000 claims 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 6
- 239000002245 particle Substances 0.000 claims 6
- 239000011253 protective coating Substances 0.000 claims 6
- 229910052710 silicon Inorganic materials 0.000 claims 6
- 239000010703 silicon Substances 0.000 claims 6
- 239000000377 silicon dioxide Substances 0.000 claims 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 6
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims 4
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 claims 4
- 238000000034 method Methods 0.000 claims 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 3
- 238000002425 crystallisation Methods 0.000 claims 3
- 230000008025 crystallization Effects 0.000 claims 3
- 229910052760 oxygen Inorganic materials 0.000 claims 3
- 239000001301 oxygen Substances 0.000 claims 3
- 239000005046 Chlorosilane Substances 0.000 claims 2
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical compound Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 claims 2
- 239000000084 colloidal system Substances 0.000 claims 2
- 239000002105 nanoparticle Substances 0.000 claims 2
- 150000002902 organometallic compounds Chemical class 0.000 claims 2
- 229920000555 poly(dimethylsilanediyl) polymer Polymers 0.000 claims 2
- 229920002545 silicone oil Polymers 0.000 claims 2
- 239000000758 substrate Substances 0.000 claims 2
- 239000000725 suspension Substances 0.000 claims 2
- 238000010438 heat treatment Methods 0.000 claims 1
- 210000004914 menses Anatomy 0.000 claims 1
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- 238000005507 spraying Methods 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP05447224 | 2005-10-06 | ||
| EP05447224.6 | 2005-10-06 | ||
| PCT/EP2006/009671 WO2007039310A1 (en) | 2005-10-06 | 2006-10-06 | Crucible for the crystallization of silicon and process for making the same |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009510387A JP2009510387A (ja) | 2009-03-12 |
| JP2009510387A5 true JP2009510387A5 (enExample) | 2009-08-20 |
| JP4917607B2 JP4917607B2 (ja) | 2012-04-18 |
Family
ID=35735284
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008533944A Expired - Fee Related JP4917607B2 (ja) | 2005-10-06 | 2006-10-06 | ケイ素の結晶化用の坩堝およびその製造方法 |
Country Status (18)
| Country | Link |
|---|---|
| US (1) | US8298333B2 (enExample) |
| EP (1) | EP1954856B1 (enExample) |
| JP (1) | JP4917607B2 (enExample) |
| KR (1) | KR101212924B1 (enExample) |
| CN (1) | CN101278078B (enExample) |
| AT (1) | ATE439461T1 (enExample) |
| AU (1) | AU2006298957B2 (enExample) |
| BR (1) | BRPI0616485A2 (enExample) |
| CA (1) | CA2624887C (enExample) |
| DE (1) | DE602006008498D1 (enExample) |
| ES (1) | ES2327570T3 (enExample) |
| NO (1) | NO20082102L (enExample) |
| PL (1) | PL1954856T3 (enExample) |
| RU (1) | RU2401889C2 (enExample) |
| TW (1) | TWI400369B (enExample) |
| UA (1) | UA89284C2 (enExample) |
| WO (1) | WO2007039310A1 (enExample) |
| ZA (1) | ZA200803754B (enExample) |
Families Citing this family (56)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102005050593A1 (de) * | 2005-10-21 | 2007-04-26 | Esk Ceramics Gmbh & Co. Kg | Dauerhafte siliciumnitridhaltige Hartbeschichtung |
| EP1811064A1 (fr) | 2006-01-12 | 2007-07-25 | Vesuvius Crucible Company | Creuset pour le traitement de silicium à l'état fondu |
| EP1985594B1 (de) * | 2007-04-25 | 2011-10-12 | ESK Ceramics GmbH & Co.KG | Formkörper mit einer dauerhaften siliciumnitridhaltigen Hartbeschichtung, Verfahren zu dessen Herstellung und dessen Verwendung |
| US8048365B2 (en) * | 2007-04-30 | 2011-11-01 | General Electric Company | Crucibles for melting titanium alloys |
| US8236232B2 (en) | 2007-04-30 | 2012-08-07 | General Electric Company | Methods for making reinforced refractory crucibles for melting titanium alloys |
| BE1017674A3 (fr) * | 2007-07-05 | 2009-03-03 | Fib Services Internat | Composition de traitement de chambre a parois refractaires et son procede de mise en oeuvre. |
| DE102007053284A1 (de) * | 2007-11-08 | 2009-05-20 | Esk Ceramics Gmbh & Co. Kg | Fest haftende siliciumnitridhaltige Trennschicht |
| DE102008031766A1 (de) | 2008-07-04 | 2009-10-15 | Schott Ag | Verfahren zur Herstellung eines beschichteten Tiegels aus einem Tiegelgrünkörper oder aus einem zwischengebrannten Tiegelkörper sowie die Verwendung solch eines beschichteten Tiegels |
| CN101433890B (zh) * | 2008-12-05 | 2010-12-29 | 江阴海润太阳能电力有限公司 | 低压下在石英坩埚内壁上喷涂氮化硅涂层的方法及装置 |
| RU2384410C1 (ru) * | 2008-12-11 | 2010-03-20 | Открытое акционерное общество Научно-производственное объединение "Искра" | Способ подготовки к работе формообразующей оправки |
| CN101775639B (zh) * | 2009-01-08 | 2012-05-30 | 常熟华融太阳能新型材料有限公司 | 用于多晶硅结晶炉炉壁保护的内衬及其制造方法 |
| CN101508590B (zh) * | 2009-03-20 | 2012-07-04 | 江西赛维Ldk太阳能高科技有限公司 | 一种多晶硅铸锭用坩埚涂层以及制备方法 |
| CN101798236B (zh) * | 2009-04-30 | 2011-12-07 | 山东圣川陶瓷材料有限公司 | 干法水泥回转窑预热器用陶瓷内筒 |
| US20110177284A1 (en) * | 2009-07-16 | 2011-07-21 | Memc Singapore Pte Ltd. | Silicon wafers and ingots with reduced oxygen content and methods for producing them |
| JP5518584B2 (ja) * | 2010-06-16 | 2014-06-11 | 電気化学工業株式会社 | 離型剤用窒化珪素粉末。 |
| CN101870592B (zh) * | 2010-06-30 | 2012-05-30 | 武汉理工大学 | 镀氮化钛碳化硅纤维的制备方法 |
| FR2964117B1 (fr) * | 2010-08-27 | 2012-09-28 | Commissariat Energie Atomique | Creuset pour la solidification de lingot de silicium |
| WO2012046673A1 (ja) * | 2010-10-08 | 2012-04-12 | Jx日鉱日石金属株式会社 | シリコンインゴット製造用容器 |
| WO2012090541A1 (ja) * | 2010-12-28 | 2012-07-05 | 宇部興産株式会社 | 多結晶シリコンインゴット鋳造用鋳型及びその製造方法並びに多結晶シリコンインゴット鋳造用鋳型の離型材用窒化珪素粉末及びそれを含有したスラリー |
| JP5637221B2 (ja) * | 2010-12-28 | 2014-12-10 | 宇部興産株式会社 | 多結晶シリコンインゴット鋳造用鋳型及びその製造方法並びに多結晶シリコンインゴット鋳造用鋳型の離型材用窒化珪素粉末及びそれを含有したスラリー |
| CN103339300A (zh) * | 2010-12-30 | 2013-10-02 | 圣戈本陶瓷及塑料股份有限公司 | 坩埚主体及其形成方法 |
| MY165455A (en) | 2011-08-31 | 2018-03-22 | 3M Innovative Properties Co | Silicon-nitride-containing separating layer having high hardness |
| CN104066873A (zh) * | 2011-09-09 | 2014-09-24 | 英诺文特科技公司 | 带涂层坩埚和制造带涂层坩埚的方法 |
| US8747538B2 (en) * | 2011-09-20 | 2014-06-10 | Chung-Hou Tony Hsiao | Photovoltaic ingot mold release |
| CN102358953B (zh) * | 2011-09-28 | 2015-12-09 | 江西赛维Ldk太阳能高科技有限公司 | 一种减少粘埚的坩埚及其制备方法 |
| US8858697B2 (en) | 2011-10-28 | 2014-10-14 | General Electric Company | Mold compositions |
| CN103130528B (zh) * | 2011-12-05 | 2014-06-11 | 江苏协鑫硅材料科技发展有限公司 | 多晶硅铸锭用的免烧结坩埚涂层结构及其制备方法 |
| US9011205B2 (en) | 2012-02-15 | 2015-04-21 | General Electric Company | Titanium aluminide article with improved surface finish |
| US8932518B2 (en) | 2012-02-29 | 2015-01-13 | General Electric Company | Mold and facecoat compositions |
| CN103360077B (zh) * | 2012-04-01 | 2014-12-24 | 浙江昱辉阳光能源有限公司 | 一种氮化硅坩埚及其制备方法 |
| EP2864529A1 (en) * | 2012-06-25 | 2015-04-29 | Silicor Materials Inc. | Lining for surfaces of a refractory crucible for purification of silicon melt and method of purification of the silicon melt using that crucible (s) for melting and further directional solidification |
| JP5901448B2 (ja) * | 2012-06-28 | 2016-04-13 | デンカ株式会社 | 離型剤用窒化ケイ素粉末 |
| US8906292B2 (en) | 2012-07-27 | 2014-12-09 | General Electric Company | Crucible and facecoat compositions |
| US8708033B2 (en) | 2012-08-29 | 2014-04-29 | General Electric Company | Calcium titanate containing mold compositions and methods for casting titanium and titanium aluminide alloys |
| US8992824B2 (en) | 2012-12-04 | 2015-03-31 | General Electric Company | Crucible and extrinsic facecoat compositions |
| US9592548B2 (en) | 2013-01-29 | 2017-03-14 | General Electric Company | Calcium hexaluminate-containing mold and facecoat compositions and methods for casting titanium and titanium aluminide alloys |
| DE102013206993B4 (de) | 2013-04-18 | 2014-12-04 | Morgan Advanced Materials Haldenwanger GmbH | Verfahren zur Beschichtung von Formkörpern aus Quarzgut |
| CN103243392A (zh) * | 2013-05-09 | 2013-08-14 | 天津英利新能源有限公司 | 多晶硅铸锭炉与制备均匀细小晶粒多晶硅铸锭的方法 |
| FR3010716B1 (fr) * | 2013-09-16 | 2015-10-09 | Commissariat Energie Atomique | Substrat pour la solidification de lingot de silicium |
| CN103526290A (zh) * | 2013-10-24 | 2014-01-22 | 阿特斯(中国)投资有限公司 | 多晶硅铸锭的制备方法 |
| US9511417B2 (en) | 2013-11-26 | 2016-12-06 | General Electric Company | Silicon carbide-containing mold and facecoat compositions and methods for casting titanium and titanium aluminide alloys |
| US9192983B2 (en) | 2013-11-26 | 2015-11-24 | General Electric Company | Silicon carbide-containing mold and facecoat compositions and methods for casting titanium and titanium aluminide alloys |
| US10391547B2 (en) | 2014-06-04 | 2019-08-27 | General Electric Company | Casting mold of grading with silicon carbide |
| TWI663126B (zh) | 2014-07-09 | 2019-06-21 | 法商維蘇威法國公司 | 包含可磨塗層之輥、其製造方法及其用途 |
| CN104140759B (zh) * | 2014-07-17 | 2016-08-24 | 宁波晶元太阳能有限公司 | 多晶硅铸锭用石英坩埚底部引晶涂层的制备方法 |
| CN105063757B (zh) * | 2015-09-17 | 2017-12-29 | 晶科能源有限公司 | 一种低氧喷涂方法 |
| CN105603374B (zh) * | 2016-02-19 | 2018-06-12 | 中科院微电子研究所昆山分所 | 一种在多晶硅铸锭坩埚上制备Si3N4薄膜的方法 |
| KR102571434B1 (ko) * | 2016-12-28 | 2023-08-29 | 오씨아이 주식회사 | 실리카 도가니 내벽에 질화규소를 코팅하는 방법 |
| CN107162001A (zh) * | 2017-06-20 | 2017-09-15 | 晋能清洁能源光伏工程有限责任公司 | 一种多晶硅分凝铸造方法及分凝装置 |
| CN107876362B (zh) * | 2017-11-10 | 2021-03-23 | 江苏协鑫硅材料科技发展有限公司 | 大尺寸铸锭用坩埚涂层的自动喷涂工艺及坩埚 |
| DE102018206982B4 (de) * | 2018-05-04 | 2025-02-20 | Alzchem Trostberg Gmbh | Tiegel zur Herstellung von multikristallinem Silicium mittels gerichteter Erstarrung, Verfahren zu dessen Herstellung und dessen Verwendung |
| CN109750351A (zh) * | 2018-05-31 | 2019-05-14 | 河北高富氮化硅材料有限公司 | 一种多晶硅铸锭用高效Si3N4粉 |
| CN109704782B (zh) * | 2019-01-30 | 2021-12-14 | 中国科学院理化技术研究所 | 一种用于光伏多晶硅生产的Si2N2O陶瓷粉体的制备方法 |
| US20220212998A1 (en) * | 2019-04-17 | 2022-07-07 | Materion Corporation | Crucibles and compositions and processes for making same |
| CN114477781B (zh) * | 2020-10-23 | 2024-05-24 | 中国科学院理化技术研究所 | 一种复合陶瓷涂层脱模剂的制备工艺 |
| KR102407043B1 (ko) * | 2022-03-04 | 2022-06-10 | 주식회사 에스티아이 | 탄화규소 분말의 합성방법 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4218418A (en) * | 1978-06-22 | 1980-08-19 | Crystal Systems, Inc. | Processes of casting an ingot and making a silica container |
| US4741925A (en) * | 1987-09-14 | 1988-05-03 | Gte Products Corporation | Method of forming silicon nitride coating |
| US5283124A (en) | 1990-03-02 | 1994-02-01 | Kansai Paint Co., Ltd. | Coating resin composition |
| RU2036983C1 (ru) * | 1991-06-03 | 1995-06-09 | Государственный научно-исследовательский и проектный институт редкометаллической промышленности "Гиредмет" | Покрытие графитового тигля |
| US6165425A (en) * | 1997-02-06 | 2000-12-26 | Bayer Aktiengesellschaft | Melting pot with silicon protective layers, method for applying said layer and the use thereof |
| US6479108B2 (en) * | 2000-11-15 | 2002-11-12 | G.T. Equipment Technologies, Inc. | Protective layer for quartz crucibles used for silicon crystallization |
| UA81278C2 (en) * | 2002-12-06 | 2007-12-25 | Vessel for holding a silicon and method for its making | |
| RU2355832C2 (ru) | 2004-04-29 | 2009-05-20 | Везувиус Крусибл Компани | Кристаллизатор для кристаллизации кремния |
| EP1739209A1 (en) | 2005-07-01 | 2007-01-03 | Vesuvius Crucible Company | Crucible for the crystallization of silicon |
| EP1811064A1 (fr) * | 2006-01-12 | 2007-07-25 | Vesuvius Crucible Company | Creuset pour le traitement de silicium à l'état fondu |
-
2006
- 2006-10-04 TW TW095136861A patent/TWI400369B/zh not_active IP Right Cessation
- 2006-10-06 RU RU2008117093/05A patent/RU2401889C2/ru not_active IP Right Cessation
- 2006-10-06 AT AT06806079T patent/ATE439461T1/de active
- 2006-10-06 CN CN2006800369429A patent/CN101278078B/zh not_active Expired - Fee Related
- 2006-10-06 ZA ZA200803754A patent/ZA200803754B/xx unknown
- 2006-10-06 PL PL06806079T patent/PL1954856T3/pl unknown
- 2006-10-06 UA UAA200805915A patent/UA89284C2/ru unknown
- 2006-10-06 CA CA2624887A patent/CA2624887C/en active Active
- 2006-10-06 ES ES06806079T patent/ES2327570T3/es active Active
- 2006-10-06 AU AU2006298957A patent/AU2006298957B2/en not_active Ceased
- 2006-10-06 EP EP06806079A patent/EP1954856B1/en not_active Not-in-force
- 2006-10-06 US US12/089,147 patent/US8298333B2/en not_active Expired - Fee Related
- 2006-10-06 WO PCT/EP2006/009671 patent/WO2007039310A1/en not_active Ceased
- 2006-10-06 DE DE602006008498T patent/DE602006008498D1/de active Active
- 2006-10-06 KR KR1020087007304A patent/KR101212924B1/ko not_active Expired - Fee Related
- 2006-10-06 BR BRPI0616485-4A patent/BRPI0616485A2/pt not_active IP Right Cessation
- 2006-10-06 JP JP2008533944A patent/JP4917607B2/ja not_active Expired - Fee Related
-
2008
- 2008-05-05 NO NO20082102A patent/NO20082102L/no not_active Application Discontinuation
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