JP2009510387A5 - - Google Patents

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Publication number
JP2009510387A5
JP2009510387A5 JP2008533944A JP2008533944A JP2009510387A5 JP 2009510387 A5 JP2009510387 A5 JP 2009510387A5 JP 2008533944 A JP2008533944 A JP 2008533944A JP 2008533944 A JP2008533944 A JP 2008533944A JP 2009510387 A5 JP2009510387 A5 JP 2009510387A5
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JP
Japan
Prior art keywords
crucible
silicon
protective coating
silica
silicon nitride
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JP2008533944A
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English (en)
Japanese (ja)
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JP4917607B2 (ja
JP2009510387A (ja
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Priority claimed from PCT/EP2006/009671 external-priority patent/WO2007039310A1/en
Publication of JP2009510387A publication Critical patent/JP2009510387A/ja
Publication of JP2009510387A5 publication Critical patent/JP2009510387A5/ja
Application granted granted Critical
Publication of JP4917607B2 publication Critical patent/JP4917607B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2008533944A 2005-10-06 2006-10-06 ケイ素の結晶化用の坩堝およびその製造方法 Expired - Fee Related JP4917607B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP05447224 2005-10-06
EP05447224.6 2005-10-06
PCT/EP2006/009671 WO2007039310A1 (en) 2005-10-06 2006-10-06 Crucible for the crystallization of silicon and process for making the same

Publications (3)

Publication Number Publication Date
JP2009510387A JP2009510387A (ja) 2009-03-12
JP2009510387A5 true JP2009510387A5 (enExample) 2009-08-20
JP4917607B2 JP4917607B2 (ja) 2012-04-18

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ID=35735284

Family Applications (1)

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JP2008533944A Expired - Fee Related JP4917607B2 (ja) 2005-10-06 2006-10-06 ケイ素の結晶化用の坩堝およびその製造方法

Country Status (18)

Country Link
US (1) US8298333B2 (enExample)
EP (1) EP1954856B1 (enExample)
JP (1) JP4917607B2 (enExample)
KR (1) KR101212924B1 (enExample)
CN (1) CN101278078B (enExample)
AT (1) ATE439461T1 (enExample)
AU (1) AU2006298957B2 (enExample)
BR (1) BRPI0616485A2 (enExample)
CA (1) CA2624887C (enExample)
DE (1) DE602006008498D1 (enExample)
ES (1) ES2327570T3 (enExample)
NO (1) NO20082102L (enExample)
PL (1) PL1954856T3 (enExample)
RU (1) RU2401889C2 (enExample)
TW (1) TWI400369B (enExample)
UA (1) UA89284C2 (enExample)
WO (1) WO2007039310A1 (enExample)
ZA (1) ZA200803754B (enExample)

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CN103339300A (zh) * 2010-12-30 2013-10-02 圣戈本陶瓷及塑料股份有限公司 坩埚主体及其形成方法
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CN104066873A (zh) * 2011-09-09 2014-09-24 英诺文特科技公司 带涂层坩埚和制造带涂层坩埚的方法
US8747538B2 (en) * 2011-09-20 2014-06-10 Chung-Hou Tony Hsiao Photovoltaic ingot mold release
CN102358953B (zh) * 2011-09-28 2015-12-09 江西赛维Ldk太阳能高科技有限公司 一种减少粘埚的坩埚及其制备方法
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CN103130528B (zh) * 2011-12-05 2014-06-11 江苏协鑫硅材料科技发展有限公司 多晶硅铸锭用的免烧结坩埚涂层结构及其制备方法
US9011205B2 (en) 2012-02-15 2015-04-21 General Electric Company Titanium aluminide article with improved surface finish
US8932518B2 (en) 2012-02-29 2015-01-13 General Electric Company Mold and facecoat compositions
CN103360077B (zh) * 2012-04-01 2014-12-24 浙江昱辉阳光能源有限公司 一种氮化硅坩埚及其制备方法
EP2864529A1 (en) * 2012-06-25 2015-04-29 Silicor Materials Inc. Lining for surfaces of a refractory crucible for purification of silicon melt and method of purification of the silicon melt using that crucible (s) for melting and further directional solidification
JP5901448B2 (ja) * 2012-06-28 2016-04-13 デンカ株式会社 離型剤用窒化ケイ素粉末
US8906292B2 (en) 2012-07-27 2014-12-09 General Electric Company Crucible and facecoat compositions
US8708033B2 (en) 2012-08-29 2014-04-29 General Electric Company Calcium titanate containing mold compositions and methods for casting titanium and titanium aluminide alloys
US8992824B2 (en) 2012-12-04 2015-03-31 General Electric Company Crucible and extrinsic facecoat compositions
US9592548B2 (en) 2013-01-29 2017-03-14 General Electric Company Calcium hexaluminate-containing mold and facecoat compositions and methods for casting titanium and titanium aluminide alloys
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CN103243392A (zh) * 2013-05-09 2013-08-14 天津英利新能源有限公司 多晶硅铸锭炉与制备均匀细小晶粒多晶硅铸锭的方法
FR3010716B1 (fr) * 2013-09-16 2015-10-09 Commissariat Energie Atomique Substrat pour la solidification de lingot de silicium
CN103526290A (zh) * 2013-10-24 2014-01-22 阿特斯(中国)投资有限公司 多晶硅铸锭的制备方法
US9511417B2 (en) 2013-11-26 2016-12-06 General Electric Company Silicon carbide-containing mold and facecoat compositions and methods for casting titanium and titanium aluminide alloys
US9192983B2 (en) 2013-11-26 2015-11-24 General Electric Company Silicon carbide-containing mold and facecoat compositions and methods for casting titanium and titanium aluminide alloys
US10391547B2 (en) 2014-06-04 2019-08-27 General Electric Company Casting mold of grading with silicon carbide
TWI663126B (zh) 2014-07-09 2019-06-21 法商維蘇威法國公司 包含可磨塗層之輥、其製造方法及其用途
CN104140759B (zh) * 2014-07-17 2016-08-24 宁波晶元太阳能有限公司 多晶硅铸锭用石英坩埚底部引晶涂层的制备方法
CN105063757B (zh) * 2015-09-17 2017-12-29 晶科能源有限公司 一种低氧喷涂方法
CN105603374B (zh) * 2016-02-19 2018-06-12 中科院微电子研究所昆山分所 一种在多晶硅铸锭坩埚上制备Si3N4薄膜的方法
KR102571434B1 (ko) * 2016-12-28 2023-08-29 오씨아이 주식회사 실리카 도가니 내벽에 질화규소를 코팅하는 방법
CN107162001A (zh) * 2017-06-20 2017-09-15 晋能清洁能源光伏工程有限责任公司 一种多晶硅分凝铸造方法及分凝装置
CN107876362B (zh) * 2017-11-10 2021-03-23 江苏协鑫硅材料科技发展有限公司 大尺寸铸锭用坩埚涂层的自动喷涂工艺及坩埚
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CN109750351A (zh) * 2018-05-31 2019-05-14 河北高富氮化硅材料有限公司 一种多晶硅铸锭用高效Si3N4粉
CN109704782B (zh) * 2019-01-30 2021-12-14 中国科学院理化技术研究所 一种用于光伏多晶硅生产的Si2N2O陶瓷粉体的制备方法
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