JP2007525004A - 三次元集積回路構造及びこれを作る方法 - Google Patents
三次元集積回路構造及びこれを作る方法 Download PDFInfo
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- JP2007525004A JP2007525004A JP2006517574A JP2006517574A JP2007525004A JP 2007525004 A JP2007525004 A JP 2007525004A JP 2006517574 A JP2006517574 A JP 2006517574A JP 2006517574 A JP2006517574 A JP 2006517574A JP 2007525004 A JP2007525004 A JP 2007525004A
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- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
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Abstract
Description
「ASIC」は「特殊な集積回路の応用」を意味する。「SoC」は「チップ上のシステム」を意味し、「SoCs」はSoCの複数形を意味する。SoCはASICであってもよいが、必ずしもそうである必要はない。ASICはSoCであってもよいが、必ずしもそうである必要はない。
SOI層を含み、ここで半導体基板及びSOI層は堆積され、そして互いに接合されるところの三次元集積回路を意味する。
MOSFET VMFLD、MESFET VMEFLD、ダイオードVDFLD、抵抗VRFLD、キャパシタVCFLD、バイポーラVBFLD及びサイリスタVTFLDである。
この発明は上に記述した実施例に限定されるのではなく、しかし追加の請求項の範囲内でのいずれか及び全ての実施例を包含することは理解すべきである。
103:ベース基板
104:単結晶半導体装置
111、112、113:FLD
120:中間接合層
121、122:下部電極
122、122a:上部電極
123:中間電極
124、128:SOI層
123a、123f、123h、131:接点
123a、123f、123h、131:接点(上記の相手)
123b:エッチング停止
123c:ゲート
123j:サイリスタ電極
123i:トランジスタ電極
124a:エミッター
124b:ベース
124c、124d:コレクター
124e:浮遊ソース
131:接点/バイアス
132:相互接続ライン
133、133a:誘電材料
134:境界
135:隔離
138、133c:誘電層
142:共有ウエル
143:基板
145:上パッド
146:下パッド
151、152、153:ILD層
161c:トランジスタ
171:ハードマスク
172:ゲート
173:エッチングマスク
180:ベース基板
182:スペーサー
183、183b、183c、189:誘電層
184:エッチング停止層
190:SOI基板
191:取り外し層
201、203:ベース半導体基板
202、204、241、242:誘電層
211、212:保持装置
243:ウエル
255:ビア
301a、301b:溶融/反溶融電極
310:溶融/反溶融層
323:消去ゲート
400:DRAM
412:補正領域(OECA)
413a、413b、413c、413d:ブロックFLDIC層
441:チップ
500:EEPROM
600:VMFLD
700、710:強誘電膜
730:FRAMセル
760:絶縁体珪素型FRAM(MFMIS)
770:センスアンプ
800:セル構造
810:MJT
850:MRAMセル
910:RSPCF
Claims (20)
- その中に形成される電気装置を有し、更に基板上に配置された最低一つの誘電層及び最低一つの相互接続層を有する基板の提供、誘電材料により互いに分離された、堆積可能なアッド‐オン層内に配置された多くの垂直方向半導体装置を含む第一の堆積可能なアッド‐オン層の提供、及び堆積可能なアッド‐オン層を基板から最も離れた基板層へ取り付けることからなる半導体構造の形成方法。
- 多くの垂直方向半導体装置が最低一つのn-p-nスタックを含む請求項1の方法。
- n‐p‐nスタック上のゲート誘電体の形成及びゲート誘電体上のゲート電極の形成から更になる請求項2の方法。
- ゲート電極はn型MOSFETを形成するように、それがn‐p‐nスタックの最低p領域に隣接するようにゲート誘電体上に配置される請求項3の方法。
- 多くの垂直方向半導体装置が最低一つのp‐n‐pスタックを含む請求項1の方法。
- p‐n‐pスタック上のゲート誘電体の形成及びゲート誘電体上のゲート電極の形成から更になる請求項5の方法。
- ゲート電極が、p型MOSFETを形成するように、それはp‐n‐pスタックの最低n領域に隣接するようにゲート誘電体上に配置される請求項6の方法。
- 多くの垂直方向半導体装置が最低一つの浮遊ゲート不揮発性メモリー装置を含む請求項1の方法。
- 垂直方向消去ゲートは最低一つの浮遊ゲート不揮発性メモリー装置に隣接し配置される請求項8の方法。
- 第一の堆積可能なアッド‐オン層の上に第二の堆積可能なアッド‐オン層を取り付けることから更になる請求項1の方法。
- 第一半導体基板の取り外し層の形成、取り外し層の上の第一半導体基板に多くのドーピング領域の形成、ここで多くのドーピング層の形成は、第一電導型を有するように、ドーピングされ、取り外し層の上の第一半導体基板の第一ドーピング層の形成、第一電導型に対する第二電導型を有するようにドーピングされ、第一ドーピング層の上の第一半導体基板に最低中間ドーピング層の形成、及び中間ドーピング層上の第一半導体基板に最低第三ドーピング層の形成からなり、第三ドーピング層上に第一の電導性ブランケット層の形成、第一電導ブランケット層上に第二の電導性ブランケット層の形成、及び第二電導性ブランケット層が第二半導体基板の対応する電導性上部層と接触するように、第一半導体基板を第二半導体基板への取り付け、からなる堆積可能なアッド‐オン層形成方法。
- 第一ドーピング層が露出するように第一ドーピング層を配置した側に対向する取り外し層の側の第一基板の一部を除去することから更になる請求項11の方法。
- 第一ドーピング層の露出部分上に第三の電導性ブランケット層を形成することから更になる請求項12の方法。
- 第三の電導性ブランケット層の一部をエッチングし、これにより下にある多くのドーピング領域の表面を露出させ、第三の電導性ブランケット層の非エッチング部分によりマスクされない多くのドーピング層の露出部分をエッチングし、これにより多くの個別ドープされたスタック構造を形成し、そして個別ドープされたスタック構造によりマスクされない第一電導性ブランケット層の部分を露出することから更になる請求項13の方法。
- 誘電材料の第一層が第三のドープされたスタック層、及び各個別ドープされたスタックの中間ドーピング層の一部を取り囲むように、そして中間ドーピング層の最低一部が露出されるように個別ドープされたスタック構造の間に誘電材料の第一層を配置し、多くの個別ドープされたスタック構造の最低一つの露出中間ドーピング層へ電気的に接続される最低一つの電導ラインを形成することから更になる請求項14の方法。
- 第一層の誘電材料上に第二層の誘電材料を配置することから更になる請求項15の方法。
- 最低一つのドープされたスタック構造の最低一部の周りにゲート誘電層を形成し、そしてゲート誘電層の最低一部に隣接してゲート電極を形成することから更になる、請求項14の方法。
- 最上層を有し、その中に配置された電気装置を有し、更にその上に形成された多くの誘電体及び相互接続ラインを有する基板、及び最上層の基板上に配置された多くの垂直方向半導体装置からなり、ここで多くの垂直方向半導体装置の各々がその下部側に配置された第一の金属電極及びその上部側に配置された第二の金属電極を有し、そして多くの垂直方向半導体装置が誘電材料が配置される領域により互いに分離されることからなる、半導体構造。
- 垂直方向半導体装置は第一電導型の第一ドーピング領域、第一電導型に対向する第二電導型の第一部分に隣接する第二ドーピング領域、及び最低第二ドーピング領域により第一ドーピング領域から分離した第三ドーピング領域からなる請求項18の半導体構造。
- 第二ドーピング領域の最低一部分上に配置されたゲート誘電層、及びゲート誘電層上に配置されたゲート電極からなり、ここで第一及び第三ドーピング領域は第一及び第二金属電極を通して電気接続され、そして第二ドーピング領域は直接の電気接点を備えない請求項19の半導体構造。
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---|---|---|---|---|
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Families Citing this family (450)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8058142B2 (en) * | 1996-11-04 | 2011-11-15 | Besang Inc. | Bonded semiconductor structure and method of making the same |
US7470598B2 (en) * | 2004-06-21 | 2008-12-30 | Sang-Yun Lee | Semiconductor layer structure and method of making the same |
US8018058B2 (en) * | 2004-06-21 | 2011-09-13 | Besang Inc. | Semiconductor memory device |
US20050280155A1 (en) * | 2004-06-21 | 2005-12-22 | Sang-Yun Lee | Semiconductor bonding and layer transfer method |
US8779597B2 (en) * | 2004-06-21 | 2014-07-15 | Sang-Yun Lee | Semiconductor device with base support structure |
EP1312120A1 (en) | 2000-08-14 | 2003-05-21 | Matrix Semiconductor, Inc. | Dense arrays and charge storage devices, and methods for making same |
US20060249753A1 (en) * | 2005-05-09 | 2006-11-09 | Matrix Semiconductor, Inc. | High-density nonvolatile memory array fabricated at low temperature comprising semiconductor diodes |
US20100190334A1 (en) * | 2003-06-24 | 2010-07-29 | Sang-Yun Lee | Three-dimensional semiconductor structure and method of manufacturing the same |
US8471263B2 (en) | 2003-06-24 | 2013-06-25 | Sang-Yun Lee | Information storage system which includes a bonded semiconductor structure |
US8071438B2 (en) * | 2003-06-24 | 2011-12-06 | Besang Inc. | Semiconductor circuit |
US7632738B2 (en) * | 2003-06-24 | 2009-12-15 | Sang-Yun Lee | Wafer bonding method |
US7473596B2 (en) | 2003-12-19 | 2009-01-06 | Micron Technology, Inc. | Methods of forming memory cells |
US7190616B2 (en) * | 2004-07-19 | 2007-03-13 | Micron Technology, Inc. | In-service reconfigurable DRAM and flash memory device |
US7060592B2 (en) * | 2004-09-15 | 2006-06-13 | United Microelectronics Corp. | Image sensor and fabricating method thereof |
US20060102963A1 (en) * | 2004-11-15 | 2006-05-18 | Taiwan Semiconductor Manufacturing Co., Ltd. | Passive device and method for forming the same |
US20080277642A1 (en) * | 2005-01-25 | 2008-11-13 | Nxp B.V. | Fabrication of Phase-Change Resistor Using a Backend Process |
US20060177173A1 (en) * | 2005-02-04 | 2006-08-10 | Sioptical, Inc. | Vertical stacking of multiple integrated circuits including SOI-based optical components |
US20060186450A1 (en) * | 2005-02-24 | 2006-08-24 | Texas Instruments Inc. | Integrated high voltage capacitor and a method of manufacture therefor |
US7470991B2 (en) * | 2005-02-24 | 2008-12-30 | Texas Instruments Incorporated | Integrated high voltage capacitor having capacitance uniformity structures and a method of manufacture therefor |
US8367524B2 (en) | 2005-03-29 | 2013-02-05 | Sang-Yun Lee | Three-dimensional integrated circuit structure |
US20110001172A1 (en) * | 2005-03-29 | 2011-01-06 | Sang-Yun Lee | Three-dimensional integrated circuit structure |
US8455978B2 (en) | 2010-05-27 | 2013-06-04 | Sang-Yun Lee | Semiconductor circuit structure and method of making the same |
KR100663360B1 (ko) * | 2005-04-20 | 2007-01-02 | 삼성전자주식회사 | 박막 트랜지스터를 갖는 반도체 소자들 및 그 제조방법들 |
DE602005023125D1 (de) * | 2005-04-27 | 2010-10-07 | St Microelectronics Srl | Vertikaler MOSFET Transistor als Auswahltransistor für nichtflüchtige Speichereinrichtung betrieben |
US7638855B2 (en) * | 2005-05-06 | 2009-12-29 | Macronix International Co., Ltd. | Anti-fuse one-time-programmable nonvolatile memory |
US8044437B1 (en) * | 2005-05-16 | 2011-10-25 | Lsi Logic Corporation | Integrated circuit cell architecture configurable for memory or logic elements |
US20060273298A1 (en) * | 2005-06-02 | 2006-12-07 | Matrix Semiconductor, Inc. | Rewriteable memory cell comprising a transistor and resistance-switching material in series |
US20060273370A1 (en) * | 2005-06-07 | 2006-12-07 | Micron Technology, Inc. | NROM flash memory with vertical transistors and surrounding gates |
US7838997B2 (en) | 2005-06-14 | 2010-11-23 | John Trezza | Remote chip attachment |
US8154131B2 (en) | 2005-06-14 | 2012-04-10 | Cufer Asset Ltd. L.L.C. | Profiled contact |
US7786592B2 (en) | 2005-06-14 | 2010-08-31 | John Trezza | Chip capacitive coupling |
US7781886B2 (en) | 2005-06-14 | 2010-08-24 | John Trezza | Electronic chip contact structure |
US7851348B2 (en) | 2005-06-14 | 2010-12-14 | Abhay Misra | Routingless chip architecture |
US7215032B2 (en) | 2005-06-14 | 2007-05-08 | Cubic Wafer, Inc. | Triaxial through-chip connection |
US7687400B2 (en) | 2005-06-14 | 2010-03-30 | John Trezza | Side stacking apparatus and method |
US7388273B2 (en) * | 2005-06-14 | 2008-06-17 | International Business Machines Corporation | Reprogrammable fuse structure and method |
US8456015B2 (en) | 2005-06-14 | 2013-06-04 | Cufer Asset Ltd. L.L.C. | Triaxial through-chip connection |
WO2006138492A2 (en) * | 2005-06-14 | 2006-12-28 | Cubic Wafer, Inc. | Post & penetration interconnection |
US7560813B2 (en) | 2005-06-14 | 2009-07-14 | John Trezza | Chip-based thermo-stack |
US7453755B2 (en) * | 2005-07-01 | 2008-11-18 | Sandisk 3D Llc | Memory cell with high-K antifuse for reverse bias programming |
US7426128B2 (en) * | 2005-07-11 | 2008-09-16 | Sandisk 3D Llc | Switchable resistive memory with opposite polarity write pulses |
US7482615B2 (en) * | 2005-07-21 | 2009-01-27 | International Business Machines Corporation | High performance MOSFET comprising stressed phase change material |
US7776715B2 (en) * | 2005-07-26 | 2010-08-17 | Micron Technology, Inc. | Reverse construction memory cell |
US7579615B2 (en) * | 2005-08-09 | 2009-08-25 | Micron Technology, Inc. | Access transistor for memory device |
US20070034922A1 (en) * | 2005-08-11 | 2007-02-15 | Micron Technology, Inc. | Integrated surround gate multifunctional memory device |
JP2007087548A (ja) * | 2005-09-26 | 2007-04-05 | Nec Lcd Technologies Ltd | メモリ回路 |
US7494849B2 (en) * | 2005-11-03 | 2009-02-24 | Cswitch Inc. | Methods for fabricating multi-terminal phase change devices |
CN1992173B (zh) * | 2005-11-30 | 2010-04-21 | 硅起源股份有限公司 | 用于注入键合衬底以便导电的方法和结构 |
US7345899B2 (en) * | 2006-04-07 | 2008-03-18 | Infineon Technologies Ag | Memory having storage locations within a common volume of phase change material |
US7687397B2 (en) | 2006-06-06 | 2010-03-30 | John Trezza | Front-end processed wafer having through-chip connections |
US7781797B2 (en) * | 2006-06-29 | 2010-08-24 | International Business Machines Corporation | One-transistor static random access memory with integrated vertical PNPN device |
KR100791071B1 (ko) * | 2006-07-04 | 2008-01-02 | 삼성전자주식회사 | 일회 프로그래머블 소자, 이를 구비하는 전자시스템 및 그동작 방법 |
DE102006037510B3 (de) * | 2006-08-10 | 2008-04-10 | Infineon Technologies Austria Ag | Verfahren zum Herstellen einer Grabenstruktur, die Verwendung dieses Verfahrens zur Herstellung einer Halbleiteranordnung und Halbleiteranordnung mit einer Grabenstruktur |
US7582549B2 (en) | 2006-08-25 | 2009-09-01 | Micron Technology, Inc. | Atomic layer deposited barium strontium titanium oxide films |
JP5341327B2 (ja) * | 2006-09-28 | 2013-11-13 | セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー | 半導体装置 |
US8866194B2 (en) * | 2006-09-28 | 2014-10-21 | Semiconductor Components Industries, Llc | Semiconductor device |
US7871927B2 (en) * | 2006-10-17 | 2011-01-18 | Cufer Asset Ltd. L.L.C. | Wafer via formation |
US20080113505A1 (en) * | 2006-11-13 | 2008-05-15 | Sparks Terry G | Method of forming a through-substrate via |
US7875840B2 (en) * | 2006-11-16 | 2011-01-25 | Aptina Imaging Corporation | Imager device with anti-fuse pixels and recessed color filter array |
US7593248B2 (en) * | 2006-11-16 | 2009-09-22 | Aptina Imaging Corporation | Method, apparatus and system providing a one-time programmable memory device |
US8283718B2 (en) * | 2006-12-16 | 2012-10-09 | Spansion Llc | Integrated circuit system with metal and semi-conducting gate |
US7705613B2 (en) * | 2007-01-03 | 2010-04-27 | Abhay Misra | Sensitivity capacitive sensor |
KR100891799B1 (ko) * | 2007-02-06 | 2009-04-07 | 삼성전기주식회사 | 교류전원용 발광소자 |
US7598163B2 (en) * | 2007-02-15 | 2009-10-06 | John Callahan | Post-seed deposition process |
US7705632B2 (en) * | 2007-02-15 | 2010-04-27 | Wyman Theodore J Ted | Variable off-chip drive |
US7803693B2 (en) * | 2007-02-15 | 2010-09-28 | John Trezza | Bowed wafer hybridization compensation |
US7670874B2 (en) * | 2007-02-16 | 2010-03-02 | John Trezza | Plated pillar package formation |
JP5114968B2 (ja) * | 2007-02-20 | 2013-01-09 | 富士通セミコンダクター株式会社 | 半導体装置及びその製造方法 |
KR100819560B1 (ko) * | 2007-03-26 | 2008-04-08 | 삼성전자주식회사 | 상전이 메모리소자 및 그 제조방법 |
US7850060B2 (en) * | 2007-04-05 | 2010-12-14 | John Trezza | Heat cycle-able connection |
US7748116B2 (en) * | 2007-04-05 | 2010-07-06 | John Trezza | Mobile binding in an electronic connection |
US7704788B2 (en) * | 2007-04-06 | 2010-04-27 | Samsung Electronics Co., Ltd. | Methods of fabricating multi-bit phase-change memory devices and devices formed thereby |
US7960210B2 (en) * | 2007-04-23 | 2011-06-14 | Cufer Asset Ltd. L.L.C. | Ultra-thin chip packaging |
US20080261392A1 (en) * | 2007-04-23 | 2008-10-23 | John Trezza | Conductive via formation |
US7842999B2 (en) * | 2007-05-17 | 2010-11-30 | Elpida Memory, Inc. | Semiconductor memory device and method of manufacturing the same |
JP4690438B2 (ja) * | 2007-05-31 | 2011-06-01 | エルピーダメモリ株式会社 | 半導体記憶装置及びその製造方法、並びに、データ処理システム |
US7932167B2 (en) * | 2007-06-29 | 2011-04-26 | International Business Machines Corporation | Phase change memory cell with vertical transistor |
JP5298470B2 (ja) * | 2007-07-11 | 2013-09-25 | 三菱電機株式会社 | 半導体装置、半導体装置の製造方法 |
US8247861B2 (en) * | 2007-07-18 | 2012-08-21 | Infineon Technologies Ag | Semiconductor device and method of making same |
US20090026524A1 (en) * | 2007-07-27 | 2009-01-29 | Franz Kreupl | Stacked Circuits |
US7847586B2 (en) * | 2007-08-20 | 2010-12-07 | Northern Lights Semiconductor Corp. | Integrate circuit chip with magnetic devices |
JP2009064860A (ja) * | 2007-09-05 | 2009-03-26 | Renesas Technology Corp | 半導体装置 |
US20090086521A1 (en) * | 2007-09-28 | 2009-04-02 | Herner S Brad | Multiple antifuse memory cells and methods to form, program, and sense the same |
US7518398B1 (en) * | 2007-10-04 | 2009-04-14 | Xilinx, Inc. | Integrated circuit with through-die via interface for die stacking |
US8415783B1 (en) | 2007-10-04 | 2013-04-09 | Xilinx, Inc. | Apparatus and methodology for testing stacked die |
US8133745B2 (en) * | 2007-10-17 | 2012-03-13 | Magic Technologies, Inc. | Method of magnetic tunneling layer processes for spin-transfer torque MRAM |
US8035126B2 (en) * | 2007-10-29 | 2011-10-11 | International Business Machines Corporation | One-transistor static random access memory with integrated vertical PNPN device |
US8183628B2 (en) | 2007-10-29 | 2012-05-22 | Unisantis Electronics Singapore Pte Ltd. | Semiconductor structure and method of fabricating the semiconductor structure |
US20090109582A1 (en) * | 2007-10-30 | 2009-04-30 | Jack Michael D | Method of protecting circuits using integrated array fuse elements and process for fabrication |
KR100855403B1 (ko) * | 2007-11-27 | 2008-08-29 | 주식회사 동부하이텍 | 이미지센서 및 그 제조방법 |
US7902051B2 (en) * | 2008-01-07 | 2011-03-08 | International Business Machines Corporation | Method for fabrication of single crystal diodes for resistive memories |
US8217380B2 (en) * | 2008-01-09 | 2012-07-10 | International Business Machines Corporation | Polysilicon emitter BJT access device for PCRAM |
US8598650B2 (en) * | 2008-01-29 | 2013-12-03 | Unisantis Electronics Singapore Pte Ltd. | Semiconductor device and production method therefor |
US8378425B2 (en) * | 2008-01-29 | 2013-02-19 | Unisantis Electronics Singapore Pte Ltd. | Semiconductor storage device |
JP5317343B2 (ja) | 2009-04-28 | 2013-10-16 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッド | 半導体装置及びその製造方法 |
US7906818B2 (en) * | 2008-03-13 | 2011-03-15 | Micron Technology, Inc. | Memory array with a pair of memory-cell strings to a single conductive pillar |
US7973555B1 (en) | 2008-05-28 | 2011-07-05 | Xilinx, Inc. | Configuration interface to stacked FPGA |
US7974119B2 (en) | 2008-07-10 | 2011-07-05 | Seagate Technology Llc | Transmission gate-based spin-transfer torque memory unit |
JP4751432B2 (ja) * | 2008-09-26 | 2011-08-17 | シャープ株式会社 | 半導体記憶装置 |
KR101124857B1 (ko) * | 2008-09-30 | 2012-03-27 | 주식회사 동부하이텍 | 이미지센서 및 그 제조방법 |
US8395206B2 (en) | 2008-10-09 | 2013-03-12 | Samsung Electronics Co., Ltd. | Semiconductor device and method of fabricating the same |
KR101502585B1 (ko) * | 2008-10-09 | 2015-03-24 | 삼성전자주식회사 | 수직형 반도체 장치 및 그 형성 방법 |
US7936580B2 (en) | 2008-10-20 | 2011-05-03 | Seagate Technology Llc | MRAM diode array and access method |
US9030867B2 (en) | 2008-10-20 | 2015-05-12 | Seagate Technology Llc | Bipolar CMOS select device for resistive sense memory |
US7936583B2 (en) | 2008-10-30 | 2011-05-03 | Seagate Technology Llc | Variable resistive memory punchthrough access method |
US7825478B2 (en) | 2008-11-07 | 2010-11-02 | Seagate Technology Llc | Polarity dependent switch for resistive sense memory |
US8178864B2 (en) | 2008-11-18 | 2012-05-15 | Seagate Technology Llc | Asymmetric barrier diode |
TWI418027B (zh) * | 2008-11-28 | 2013-12-01 | Powerchip Technology Corp | 相變化記憶裝置及其製造方法 |
US8203869B2 (en) | 2008-12-02 | 2012-06-19 | Seagate Technology Llc | Bit line charge accumulation sensing for resistive changing memory |
US8278167B2 (en) * | 2008-12-18 | 2012-10-02 | Micron Technology, Inc. | Method and structure for integrating capacitor-less memory cell with logic |
US8837204B2 (en) | 2009-02-15 | 2014-09-16 | NDEP Technologies Ltd. | Four-transistor and five-transistor BJT-CMOS asymmetric SRAM cells |
KR20100111531A (ko) | 2009-04-07 | 2010-10-15 | 삼성전자주식회사 | 다이오드를 갖는 메모리 장치 및 그 제조 방법 |
US8669778B1 (en) | 2009-04-14 | 2014-03-11 | Monolithic 3D Inc. | Method for design and manufacturing of a 3D semiconductor device |
US7986042B2 (en) | 2009-04-14 | 2011-07-26 | Monolithic 3D Inc. | Method for fabrication of a semiconductor device and structure |
US8384426B2 (en) | 2009-04-14 | 2013-02-26 | Monolithic 3D Inc. | Semiconductor device and structure |
US8362800B2 (en) | 2010-10-13 | 2013-01-29 | Monolithic 3D Inc. | 3D semiconductor device including field repairable logics |
US7964916B2 (en) | 2009-04-14 | 2011-06-21 | Monolithic 3D Inc. | Method for fabrication of a semiconductor device and structure |
US8373439B2 (en) | 2009-04-14 | 2013-02-12 | Monolithic 3D Inc. | 3D semiconductor device |
US9509313B2 (en) | 2009-04-14 | 2016-11-29 | Monolithic 3D Inc. | 3D semiconductor device |
US8058137B1 (en) | 2009-04-14 | 2011-11-15 | Monolithic 3D Inc. | Method for fabrication of a semiconductor device and structure |
US8362482B2 (en) | 2009-04-14 | 2013-01-29 | Monolithic 3D Inc. | Semiconductor device and structure |
US9577642B2 (en) | 2009-04-14 | 2017-02-21 | Monolithic 3D Inc. | Method to form a 3D semiconductor device |
US8395191B2 (en) * | 2009-10-12 | 2013-03-12 | Monolithic 3D Inc. | Semiconductor device and structure |
US8405420B2 (en) | 2009-04-14 | 2013-03-26 | Monolithic 3D Inc. | System comprising a semiconductor device and structure |
US8258810B2 (en) | 2010-09-30 | 2012-09-04 | Monolithic 3D Inc. | 3D semiconductor device |
US9711407B2 (en) * | 2009-04-14 | 2017-07-18 | Monolithic 3D Inc. | Method of manufacturing a three dimensional integrated circuit by transfer of a mono-crystalline layer |
US8754533B2 (en) | 2009-04-14 | 2014-06-17 | Monolithic 3D Inc. | Monolithic three-dimensional semiconductor device and structure |
US8378715B2 (en) | 2009-04-14 | 2013-02-19 | Monolithic 3D Inc. | Method to construct systems |
US8427200B2 (en) | 2009-04-14 | 2013-04-23 | Monolithic 3D Inc. | 3D semiconductor device |
JP4487221B1 (ja) * | 2009-04-17 | 2010-06-23 | 日本ユニサンティスエレクトロニクス株式会社 | 半導体装置 |
US7968876B2 (en) | 2009-05-22 | 2011-06-28 | Macronix International Co., Ltd. | Phase change memory cell having vertical channel access transistor |
US8350316B2 (en) | 2009-05-22 | 2013-01-08 | Macronix International Co., Ltd. | Phase change memory cells having vertical channel access transistor and memory plane |
US8159856B2 (en) | 2009-07-07 | 2012-04-17 | Seagate Technology Llc | Bipolar select device for resistive sense memory |
US8208285B2 (en) * | 2009-07-13 | 2012-06-26 | Seagate Technology Llc | Vertical non-volatile switch with punchthrough access and method of fabrication therefor |
US8158964B2 (en) | 2009-07-13 | 2012-04-17 | Seagate Technology Llc | Schottky diode switch and memory units containing the same |
US8183126B2 (en) | 2009-07-13 | 2012-05-22 | Seagate Technology Llc | Patterning embedded control lines for vertically stacked semiconductor elements |
US8063654B2 (en) * | 2009-07-17 | 2011-11-22 | Xilinx, Inc. | Apparatus and method for testing of stacked die structure |
JP4987926B2 (ja) * | 2009-09-16 | 2012-08-01 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッド | 半導体装置 |
US8294212B2 (en) * | 2009-09-18 | 2012-10-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods and apparatus for SRAM bit cell with low standby current, low supply voltage and high speed |
US8399935B2 (en) * | 2009-09-18 | 2013-03-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Embedded SRAM memory for low power applications |
JP5356970B2 (ja) * | 2009-10-01 | 2013-12-04 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッド | 半導体装置 |
US10388863B2 (en) | 2009-10-12 | 2019-08-20 | Monolithic 3D Inc. | 3D memory device and structure |
US10354995B2 (en) | 2009-10-12 | 2019-07-16 | Monolithic 3D Inc. | Semiconductor memory device and structure |
US10043781B2 (en) | 2009-10-12 | 2018-08-07 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US11018133B2 (en) | 2009-10-12 | 2021-05-25 | Monolithic 3D Inc. | 3D integrated circuit |
US9099424B1 (en) | 2012-08-10 | 2015-08-04 | Monolithic 3D Inc. | Semiconductor system, device and structure with heat removal |
US10910364B2 (en) | 2009-10-12 | 2021-02-02 | Monolitaic 3D Inc. | 3D semiconductor device |
US8742476B1 (en) | 2012-11-27 | 2014-06-03 | Monolithic 3D Inc. | Semiconductor device and structure |
US8581349B1 (en) | 2011-05-02 | 2013-11-12 | Monolithic 3D Inc. | 3D memory semiconductor device and structure |
US11984445B2 (en) | 2009-10-12 | 2024-05-14 | Monolithic 3D Inc. | 3D semiconductor devices and structures with metal layers |
US10366970B2 (en) | 2009-10-12 | 2019-07-30 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US10157909B2 (en) | 2009-10-12 | 2018-12-18 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US8450804B2 (en) | 2011-03-06 | 2013-05-28 | Monolithic 3D Inc. | Semiconductor device and structure for heat removal |
US9892972B2 (en) * | 2009-10-12 | 2018-02-13 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US8148728B2 (en) | 2009-10-12 | 2012-04-03 | Monolithic 3D, Inc. | Method for fabrication of a semiconductor device and structure |
US8476145B2 (en) | 2010-10-13 | 2013-07-02 | Monolithic 3D Inc. | Method of fabricating a semiconductor device and structure |
US11374118B2 (en) | 2009-10-12 | 2022-06-28 | Monolithic 3D Inc. | Method to form a 3D integrated circuit |
US8536023B2 (en) | 2010-11-22 | 2013-09-17 | Monolithic 3D Inc. | Method of manufacturing a semiconductor device and structure |
US8841777B2 (en) | 2010-01-12 | 2014-09-23 | International Business Machines Corporation | Bonded structure employing metal semiconductor alloy bonding |
KR20180028557A (ko) | 2010-02-05 | 2018-03-16 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제조 방법 |
US8298875B1 (en) | 2011-03-06 | 2012-10-30 | Monolithic 3D Inc. | Method for fabrication of a semiconductor device and structure |
US8492886B2 (en) | 2010-02-16 | 2013-07-23 | Monolithic 3D Inc | 3D integrated circuit with logic |
US8461035B1 (en) | 2010-09-30 | 2013-06-11 | Monolithic 3D Inc. | Method for fabrication of a semiconductor device and structure |
US8026521B1 (en) | 2010-10-11 | 2011-09-27 | Monolithic 3D Inc. | Semiconductor device and structure |
US8373230B1 (en) | 2010-10-13 | 2013-02-12 | Monolithic 3D Inc. | Method for fabrication of a semiconductor device and structure |
US9099526B2 (en) | 2010-02-16 | 2015-08-04 | Monolithic 3D Inc. | Integrated circuit device and structure |
US8541819B1 (en) | 2010-12-09 | 2013-09-24 | Monolithic 3D Inc. | Semiconductor device and structure |
US9608119B2 (en) | 2010-03-02 | 2017-03-28 | Micron Technology, Inc. | Semiconductor-metal-on-insulator structures, methods of forming such structures, and semiconductor devices including such structures |
US9646869B2 (en) * | 2010-03-02 | 2017-05-09 | Micron Technology, Inc. | Semiconductor devices including a diode structure over a conductive strap and methods of forming such semiconductor devices |
US8513722B2 (en) | 2010-03-02 | 2013-08-20 | Micron Technology, Inc. | Floating body cell structures, devices including same, and methods for forming same |
US8288795B2 (en) * | 2010-03-02 | 2012-10-16 | Micron Technology, Inc. | Thyristor based memory cells, devices and systems including the same and methods for forming the same |
US8507966B2 (en) | 2010-03-02 | 2013-08-13 | Micron Technology, Inc. | Semiconductor cells, arrays, devices and systems having a buried conductive line and methods for forming the same |
WO2011111662A1 (ja) | 2010-03-08 | 2011-09-15 | 日本ユニサンティスエレクトロニクス株式会社 | 固体撮像装置 |
US8487357B2 (en) | 2010-03-12 | 2013-07-16 | Unisantis Electronics Singapore Pte Ltd. | Solid state imaging device having high sensitivity and high pixel density |
CN101834152B (zh) * | 2010-04-20 | 2012-08-22 | 中国科学院上海微系统与信息技术研究所 | 三维立体堆叠的电阻转换存储器的制造方法 |
US8723335B2 (en) | 2010-05-20 | 2014-05-13 | Sang-Yun Lee | Semiconductor circuit structure and method of forming the same using a capping layer |
KR101669244B1 (ko) | 2010-06-08 | 2016-10-25 | 삼성전자주식회사 | 에스램 소자 및 그 제조방법 |
JP5066590B2 (ja) * | 2010-06-09 | 2012-11-07 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッド | 半導体装置とその製造方法 |
JP5087655B2 (ja) | 2010-06-15 | 2012-12-05 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッド | 半導体装置及びその製造方法 |
KR101134819B1 (ko) | 2010-07-02 | 2012-04-13 | 이상윤 | 반도체 메모리 장치의 제조 방법 |
US9953925B2 (en) | 2011-06-28 | 2018-04-24 | Monolithic 3D Inc. | Semiconductor system and device |
US9219005B2 (en) | 2011-06-28 | 2015-12-22 | Monolithic 3D Inc. | Semiconductor system and device |
EP3460845A1 (en) | 2010-07-30 | 2019-03-27 | Monolithic 3D Inc. | A 3d semiconductor device and system |
US8901613B2 (en) | 2011-03-06 | 2014-12-02 | Monolithic 3D Inc. | Semiconductor device and structure for heat removal |
US8642416B2 (en) | 2010-07-30 | 2014-02-04 | Monolithic 3D Inc. | Method of forming three dimensional integrated circuit devices using layer transfer technique |
US10217667B2 (en) | 2011-06-28 | 2019-02-26 | Monolithic 3D Inc. | 3D semiconductor device, fabrication method and system |
JP5075959B2 (ja) * | 2010-09-14 | 2012-11-21 | 株式会社東芝 | 抵抗変化メモリ |
US8617952B2 (en) * | 2010-09-28 | 2013-12-31 | Seagate Technology Llc | Vertical transistor with hardening implatation |
US11217472B2 (en) * | 2010-12-16 | 2022-01-04 | Monolithic 3D Inc. | 3D semiconductor device and structure with multiple isolation layers |
US8163581B1 (en) | 2010-10-13 | 2012-04-24 | Monolith IC 3D | Semiconductor and optoelectronic devices |
US8273610B2 (en) | 2010-11-18 | 2012-09-25 | Monolithic 3D Inc. | Method of constructing a semiconductor device and structure |
US10497713B2 (en) | 2010-11-18 | 2019-12-03 | Monolithic 3D Inc. | 3D semiconductor memory device and structure |
US11482440B2 (en) * | 2010-12-16 | 2022-10-25 | Monolithic 3D Inc. | 3D semiconductor device and structure with a built-in test circuit for repairing faulty circuits |
US9613844B2 (en) * | 2010-11-18 | 2017-04-04 | Monolithic 3D Inc. | 3D semiconductor device having two layers of transistors |
US11024673B1 (en) * | 2010-10-11 | 2021-06-01 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US11257867B1 (en) | 2010-10-11 | 2022-02-22 | Monolithic 3D Inc. | 3D semiconductor device and structure with oxide bonds |
US11018191B1 (en) | 2010-10-11 | 2021-05-25 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US10896931B1 (en) * | 2010-10-11 | 2021-01-19 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US10290682B2 (en) | 2010-10-11 | 2019-05-14 | Monolithic 3D Inc. | 3D IC semiconductor device and structure with stacked memory |
US11315980B1 (en) * | 2010-10-11 | 2022-04-26 | Monolithic 3D Inc. | 3D semiconductor device and structure with transistors |
US11227897B2 (en) | 2010-10-11 | 2022-01-18 | Monolithic 3D Inc. | Method for producing a 3D semiconductor memory device and structure |
US11335731B1 (en) * | 2010-10-11 | 2022-05-17 | Monolithic 3D Inc. | 3D semiconductor device and structure with transistors |
US8114757B1 (en) | 2010-10-11 | 2012-02-14 | Monolithic 3D Inc. | Semiconductor device and structure |
US11469271B2 (en) | 2010-10-11 | 2022-10-11 | Monolithic 3D Inc. | Method to produce 3D semiconductor devices and structures with memory |
US11158674B2 (en) | 2010-10-11 | 2021-10-26 | Monolithic 3D Inc. | Method to produce a 3D semiconductor device and structure |
US10825864B2 (en) * | 2010-10-11 | 2020-11-03 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US11600667B1 (en) | 2010-10-11 | 2023-03-07 | Monolithic 3D Inc. | Method to produce 3D semiconductor devices and structures with memory |
US11133351B2 (en) * | 2010-10-11 | 2021-09-28 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US11327227B2 (en) | 2010-10-13 | 2022-05-10 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with electromagnetic modulators |
US9197804B1 (en) | 2011-10-14 | 2015-11-24 | Monolithic 3D Inc. | Semiconductor and optoelectronic devices |
US11133344B2 (en) | 2010-10-13 | 2021-09-28 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with image sensors |
US11929372B2 (en) | 2010-10-13 | 2024-03-12 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with image sensors and wafer bonding |
US11404466B2 (en) | 2010-10-13 | 2022-08-02 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with image sensors |
US11163112B2 (en) | 2010-10-13 | 2021-11-02 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with electromagnetic modulators |
US10679977B2 (en) | 2010-10-13 | 2020-06-09 | Monolithic 3D Inc. | 3D microdisplay device and structure |
US11984438B2 (en) | 2010-10-13 | 2024-05-14 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with oxide bonding |
US11043523B1 (en) | 2010-10-13 | 2021-06-22 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with image sensors |
US8283215B2 (en) | 2010-10-13 | 2012-10-09 | Monolithic 3D Inc. | Semiconductor and optoelectronic devices |
US10943934B2 (en) | 2010-10-13 | 2021-03-09 | Monolithic 3D Inc. | Multilevel semiconductor device and structure |
US10978501B1 (en) | 2010-10-13 | 2021-04-13 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with waveguides |
US11855114B2 (en) | 2010-10-13 | 2023-12-26 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with image sensors and wafer bonding |
US11437368B2 (en) | 2010-10-13 | 2022-09-06 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with oxide bonding |
US10833108B2 (en) | 2010-10-13 | 2020-11-10 | Monolithic 3D Inc. | 3D microdisplay device and structure |
US11869915B2 (en) | 2010-10-13 | 2024-01-09 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with image sensors and wafer bonding |
US11164898B2 (en) | 2010-10-13 | 2021-11-02 | Monolithic 3D Inc. | Multilevel semiconductor device and structure |
US11855100B2 (en) | 2010-10-13 | 2023-12-26 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with oxide bonding |
US11605663B2 (en) | 2010-10-13 | 2023-03-14 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with image sensors and wafer bonding |
US11694922B2 (en) | 2010-10-13 | 2023-07-04 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with oxide bonding |
US8379458B1 (en) | 2010-10-13 | 2013-02-19 | Monolithic 3D Inc. | Semiconductor device and structure |
US10998374B1 (en) | 2010-10-13 | 2021-05-04 | Monolithic 3D Inc. | Multilevel semiconductor device and structure |
US11063071B1 (en) | 2010-10-13 | 2021-07-13 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with waveguides |
US8361856B2 (en) | 2010-11-01 | 2013-01-29 | Micron Technology, Inc. | Memory cells, arrays of memory cells, and methods of forming memory cells |
US8329567B2 (en) | 2010-11-03 | 2012-12-11 | Micron Technology, Inc. | Methods of forming doped regions in semiconductor substrates |
US11735462B2 (en) | 2010-11-18 | 2023-08-22 | Monolithic 3D Inc. | 3D semiconductor device and structure with single-crystal layers |
US11121021B2 (en) | 2010-11-18 | 2021-09-14 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US11342214B1 (en) * | 2010-11-18 | 2022-05-24 | Monolithic 3D Inc. | Methods for producing a 3D semiconductor memory device and structure |
US11355380B2 (en) * | 2010-11-18 | 2022-06-07 | Monolithic 3D Inc. | Methods for producing 3D semiconductor memory device and structure utilizing alignment marks |
US11521888B2 (en) * | 2010-11-18 | 2022-12-06 | Monolithic 3D Inc. | 3D semiconductor device and structure with high-k metal gate transistors |
US11164770B1 (en) * | 2010-11-18 | 2021-11-02 | Monolithic 3D Inc. | Method for producing a 3D semiconductor memory device and structure |
US11854857B1 (en) * | 2010-11-18 | 2023-12-26 | Monolithic 3D Inc. | Methods for producing a 3D semiconductor device and structure with memory cells and multiple metal layers |
US11031275B2 (en) | 2010-11-18 | 2021-06-08 | Monolithic 3D Inc. | 3D semiconductor device and structure with memory |
US11784082B2 (en) | 2010-11-18 | 2023-10-10 | Monolithic 3D Inc. | 3D semiconductor device and structure with bonding |
US11482439B2 (en) | 2010-11-18 | 2022-10-25 | Monolithic 3D Inc. | Methods for producing a 3D semiconductor memory device comprising charge trap junction-less transistors |
US11495484B2 (en) | 2010-11-18 | 2022-11-08 | Monolithic 3D Inc. | 3D semiconductor devices and structures with at least two single-crystal layers |
US11508605B2 (en) | 2010-11-18 | 2022-11-22 | Monolithic 3D Inc. | 3D semiconductor memory device and structure |
US11094576B1 (en) * | 2010-11-18 | 2021-08-17 | Monolithic 3D Inc. | Methods for producing a 3D semiconductor memory device and structure |
US11804396B2 (en) * | 2010-11-18 | 2023-10-31 | Monolithic 3D Inc. | Methods for producing a 3D semiconductor device and structure with memory cells and multiple metal layers |
US11923230B1 (en) | 2010-11-18 | 2024-03-05 | Monolithic 3D Inc. | 3D semiconductor device and structure with bonding |
US11615977B2 (en) | 2010-11-18 | 2023-03-28 | Monolithic 3D Inc. | 3D semiconductor memory device and structure |
US11482438B2 (en) * | 2010-11-18 | 2022-10-25 | Monolithic 3D Inc. | Methods for producing a 3D semiconductor memory device and structure |
US11018042B1 (en) | 2010-11-18 | 2021-05-25 | Monolithic 3D Inc. | 3D semiconductor memory device and structure |
US11107721B2 (en) | 2010-11-18 | 2021-08-31 | Monolithic 3D Inc. | 3D semiconductor device and structure with NAND logic |
US11610802B2 (en) * | 2010-11-18 | 2023-03-21 | Monolithic 3D Inc. | Method for producing a 3D semiconductor device and structure with single crystal transistors and metal gate electrodes |
US11211279B2 (en) | 2010-11-18 | 2021-12-28 | Monolithic 3D Inc. | Method for processing a 3D integrated circuit and structure |
US11901210B2 (en) | 2010-11-18 | 2024-02-13 | Monolithic 3D Inc. | 3D semiconductor device and structure with memory |
US11004719B1 (en) | 2010-11-18 | 2021-05-11 | Monolithic 3D Inc. | Methods for producing a 3D semiconductor memory device and structure |
US11569117B2 (en) * | 2010-11-18 | 2023-01-31 | Monolithic 3D Inc. | 3D semiconductor device and structure with single-crystal layers |
US11443971B2 (en) | 2010-11-18 | 2022-09-13 | Monolithic 3D Inc. | 3D semiconductor device and structure with memory |
US11355381B2 (en) | 2010-11-18 | 2022-06-07 | Monolithic 3D Inc. | 3D semiconductor memory device and structure |
US11862503B2 (en) * | 2010-11-18 | 2024-01-02 | Monolithic 3D Inc. | Method for producing a 3D semiconductor device and structure with memory cells and multiple metal layers |
CN102487087B (zh) * | 2010-12-01 | 2014-08-13 | 张家港丽恒光微电子科技有限公司 | 应用于三维片上集成系统的薄膜晶体管的制造方法 |
US8648426B2 (en) | 2010-12-17 | 2014-02-11 | Seagate Technology Llc | Tunneling transistors |
US8598621B2 (en) | 2011-02-11 | 2013-12-03 | Micron Technology, Inc. | Memory cells, memory arrays, methods of forming memory cells, and methods of forming a shared doped semiconductor region of a vertically oriented thyristor and a vertically oriented access transistor |
US8450175B2 (en) | 2011-02-22 | 2013-05-28 | Micron Technology, Inc. | Methods of forming a vertical transistor and at least a conductive line electrically coupled therewith |
US8952418B2 (en) | 2011-03-01 | 2015-02-10 | Micron Technology, Inc. | Gated bipolar junction transistors |
US8975670B2 (en) | 2011-03-06 | 2015-03-10 | Monolithic 3D Inc. | Semiconductor device and structure for heat removal |
US8519431B2 (en) | 2011-03-08 | 2013-08-27 | Micron Technology, Inc. | Thyristors |
US9673102B2 (en) * | 2011-04-01 | 2017-06-06 | Micron Technology, Inc. | Methods of forming vertical field-effect transistor with self-aligned contacts for memory devices with planar periphery/array and intermediate structures formed thereby |
US8313960B1 (en) * | 2011-05-03 | 2012-11-20 | Avalanche Technology, Inc. | Magnetic tunnel junction (MTJ) formation using multiple etching processes |
US8148174B1 (en) * | 2011-05-03 | 2012-04-03 | Avalanche Technology, Inc. | Magnetic tunnel junction (MTJ) formation with two-step process |
EP3534399A1 (en) * | 2011-05-24 | 2019-09-04 | Sony Corporation | Semiconductor device |
US8569831B2 (en) | 2011-05-27 | 2013-10-29 | Micron Technology, Inc. | Integrated circuit arrays and semiconductor constructions |
US10388568B2 (en) | 2011-06-28 | 2019-08-20 | Monolithic 3D Inc. | 3D semiconductor device and system |
KR101758759B1 (ko) | 2011-07-18 | 2017-07-17 | 삼성전자주식회사 | 무선통신 시스템에서 채널 정보 피드백 방법 및 장치 |
US8772848B2 (en) | 2011-07-26 | 2014-07-08 | Micron Technology, Inc. | Circuit structures, memory circuitry, and methods |
US8609492B2 (en) * | 2011-07-27 | 2013-12-17 | Micron Technology, Inc. | Vertical memory cell |
US8866121B2 (en) | 2011-07-29 | 2014-10-21 | Sandisk 3D Llc | Current-limiting layer and a current-reducing layer in a memory device |
US8659001B2 (en) | 2011-09-01 | 2014-02-25 | Sandisk 3D Llc | Defect gradient to boost nonvolatile memory performance |
US8564034B2 (en) | 2011-09-08 | 2013-10-22 | Unisantis Electronics Singapore Pte. Ltd. | Solid-state imaging device |
US8669601B2 (en) | 2011-09-15 | 2014-03-11 | Unisantis Electronics Singapore Pte. Ltd. | Method for producing semiconductor device and semiconductor device having pillar-shaped semiconductor |
US8687399B2 (en) | 2011-10-02 | 2014-04-01 | Monolithic 3D Inc. | Semiconductor device and structure |
US9029173B2 (en) * | 2011-10-18 | 2015-05-12 | Monolithic 3D Inc. | Method for fabrication of a semiconductor device and structure |
US8637413B2 (en) | 2011-12-02 | 2014-01-28 | Sandisk 3D Llc | Nonvolatile resistive memory element with a passivated switching layer |
US8916478B2 (en) | 2011-12-19 | 2014-12-23 | Unisantis Electronics Singapore Pte. Ltd. | Method for manufacturing semiconductor device and semiconductor device |
US8772175B2 (en) | 2011-12-19 | 2014-07-08 | Unisantis Electronics Singapore Pte. Ltd. | Method for manufacturing semiconductor device and semiconductor device |
US8698119B2 (en) | 2012-01-19 | 2014-04-15 | Sandisk 3D Llc | Nonvolatile memory device using a tunnel oxide as a current limiter element |
US8686386B2 (en) | 2012-02-17 | 2014-04-01 | Sandisk 3D Llc | Nonvolatile memory device using a varistor as a current limiter element |
US8748938B2 (en) | 2012-02-20 | 2014-06-10 | Unisantis Electronics Singapore Pte. Ltd. | Solid-state imaging device |
US8754421B2 (en) | 2012-02-24 | 2014-06-17 | Raytheon Company | Method for processing semiconductors using a combination of electron beam and optical lithography |
US9036391B2 (en) | 2012-03-06 | 2015-05-19 | Micron Technology, Inc. | Arrays of vertically-oriented transistors, memory arrays including vertically-oriented transistors, and memory cells |
US9000557B2 (en) | 2012-03-17 | 2015-04-07 | Zvi Or-Bach | Semiconductor device and structure |
US11616004B1 (en) | 2012-04-09 | 2023-03-28 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers and a connective path |
US11881443B2 (en) | 2012-04-09 | 2024-01-23 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers and a connective path |
US11164811B2 (en) | 2012-04-09 | 2021-11-02 | Monolithic 3D Inc. | 3D semiconductor device with isolation layers and oxide-to-oxide bonding |
US11476181B1 (en) | 2012-04-09 | 2022-10-18 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers |
US11410912B2 (en) | 2012-04-09 | 2022-08-09 | Monolithic 3D Inc. | 3D semiconductor device with vias and isolation layers |
US11594473B2 (en) | 2012-04-09 | 2023-02-28 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers and a connective path |
US8557632B1 (en) | 2012-04-09 | 2013-10-15 | Monolithic 3D Inc. | Method for fabrication of a semiconductor device and structure |
US11735501B1 (en) | 2012-04-09 | 2023-08-22 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers and a connective path |
US10600888B2 (en) | 2012-04-09 | 2020-03-24 | Monolithic 3D Inc. | 3D semiconductor device |
US11694944B1 (en) | 2012-04-09 | 2023-07-04 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers and a connective path |
US11088050B2 (en) | 2012-04-09 | 2021-08-10 | Monolithic 3D Inc. | 3D semiconductor device with isolation layers |
US9129896B2 (en) | 2012-08-21 | 2015-09-08 | Micron Technology, Inc. | Arrays comprising vertically-oriented transistors, integrated circuitry comprising a conductive line buried in silicon-comprising semiconductor material, methods of forming a plurality of conductive lines buried in silicon-comprising semiconductor material, and methods of forming an array comprising vertically-oriented transistors |
US9006060B2 (en) | 2012-08-21 | 2015-04-14 | Micron Technology, Inc. | N-type field effect transistors, arrays comprising N-type vertically-oriented transistors, methods of forming an N-type field effect transistor, and methods of forming an array comprising vertically-oriented N-type transistors |
US9478550B2 (en) | 2012-08-27 | 2016-10-25 | Micron Technology, Inc. | Arrays of vertically-oriented transistors, and memory arrays including vertically-oriented transistors |
US8686428B1 (en) * | 2012-11-16 | 2014-04-01 | Monolithic 3D Inc. | Semiconductor device and structure |
US8574929B1 (en) | 2012-11-16 | 2013-11-05 | Monolithic 3D Inc. | Method to form a 3D semiconductor device and structure |
US8674470B1 (en) | 2012-12-22 | 2014-03-18 | Monolithic 3D Inc. | Semiconductor device and structure |
US11967583B2 (en) | 2012-12-22 | 2024-04-23 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers |
US11217565B2 (en) | 2012-12-22 | 2022-01-04 | Monolithic 3D Inc. | Method to form a 3D semiconductor device and structure |
US11961827B1 (en) | 2012-12-22 | 2024-04-16 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers |
US11018116B2 (en) | 2012-12-22 | 2021-05-25 | Monolithic 3D Inc. | Method to form a 3D semiconductor device and structure |
US11063024B1 (en) | 2012-12-22 | 2021-07-13 | Monlithic 3D Inc. | Method to form a 3D semiconductor device and structure |
US11784169B2 (en) | 2012-12-22 | 2023-10-10 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers |
US11309292B2 (en) | 2012-12-22 | 2022-04-19 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers |
US11916045B2 (en) | 2012-12-22 | 2024-02-27 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers |
US11087995B1 (en) | 2012-12-29 | 2021-08-10 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US11430667B2 (en) | 2012-12-29 | 2022-08-30 | Monolithic 3D Inc. | 3D semiconductor device and structure with bonding |
US9385058B1 (en) | 2012-12-29 | 2016-07-05 | Monolithic 3D Inc. | Semiconductor device and structure |
US10903089B1 (en) | 2012-12-29 | 2021-01-26 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US11004694B1 (en) | 2012-12-29 | 2021-05-11 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US10892169B2 (en) | 2012-12-29 | 2021-01-12 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US11177140B2 (en) | 2012-12-29 | 2021-11-16 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US11430668B2 (en) | 2012-12-29 | 2022-08-30 | Monolithic 3D Inc. | 3D semiconductor device and structure with bonding |
US10600657B2 (en) | 2012-12-29 | 2020-03-24 | Monolithic 3D Inc | 3D semiconductor device and structure |
US9871034B1 (en) | 2012-12-29 | 2018-01-16 | Monolithic 3D Inc. | Semiconductor device and structure |
US10115663B2 (en) | 2012-12-29 | 2018-10-30 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US10651054B2 (en) | 2012-12-29 | 2020-05-12 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US8951893B2 (en) | 2013-01-03 | 2015-02-10 | International Business Machines Corporation | Fabricating polysilicon MOS devices and passive ESD devices |
US8928142B2 (en) * | 2013-02-22 | 2015-01-06 | Fairchild Semiconductor Corporation | Apparatus related to capacitance reduction of a signal port |
US20140241031A1 (en) | 2013-02-28 | 2014-08-28 | Sandisk 3D Llc | Dielectric-based memory cells having multi-level one-time programmable and bi-level rewriteable operating modes and methods of forming the same |
US9112047B2 (en) | 2013-02-28 | 2015-08-18 | Freescale Semiconductor, Inc. | Split gate non-volatile memory (NVM) cell and method therefor |
US8865530B2 (en) | 2013-03-08 | 2014-10-21 | International Business Machines Corporation | Extremely thin semiconductor on insulator (ETSOI) logic and memory hybrid chip |
US11869965B2 (en) | 2013-03-11 | 2024-01-09 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers and memory cells |
US8902663B1 (en) | 2013-03-11 | 2014-12-02 | Monolithic 3D Inc. | Method of maintaining a memory state |
US11935949B1 (en) | 2013-03-11 | 2024-03-19 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers and memory cells |
US10325651B2 (en) | 2013-03-11 | 2019-06-18 | Monolithic 3D Inc. | 3D semiconductor device with stacked memory |
US11088130B2 (en) | 2014-01-28 | 2021-08-10 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US10840239B2 (en) | 2014-08-26 | 2020-11-17 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US8994404B1 (en) | 2013-03-12 | 2015-03-31 | Monolithic 3D Inc. | Semiconductor device and structure |
US11923374B2 (en) | 2013-03-12 | 2024-03-05 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers |
US11398569B2 (en) | 2013-03-12 | 2022-07-26 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US9111853B2 (en) | 2013-03-15 | 2015-08-18 | Micron Technology, Inc. | Methods of forming doped elements of semiconductor device structures |
US9117749B1 (en) | 2013-03-15 | 2015-08-25 | Monolithic 3D Inc. | Semiconductor device and structure |
US10224279B2 (en) | 2013-03-15 | 2019-03-05 | Monolithic 3D Inc. | Semiconductor device and structure |
CN103137646A (zh) * | 2013-03-15 | 2013-06-05 | 中国科学院微电子研究所 | 用于双极型阻变存储器交叉阵列集成方式的选通器件单元 |
US8860123B1 (en) | 2013-03-28 | 2014-10-14 | Stmicroelectronics, Inc. | Memory device having multiple dielectric gate stacks with first and second dielectric layers and related methods |
US9006816B2 (en) | 2013-03-28 | 2015-04-14 | Stmicroelectronics, Inc. | Memory device having multiple dielectric gate stacks and related methods |
US11270055B1 (en) | 2013-04-15 | 2022-03-08 | Monolithic 3D Inc. | Automation for monolithic 3D devices |
US11720736B2 (en) | 2013-04-15 | 2023-08-08 | Monolithic 3D Inc. | Automation methods for 3D integrated circuits and devices |
US9021414B1 (en) | 2013-04-15 | 2015-04-28 | Monolithic 3D Inc. | Automation for monolithic 3D devices |
US11574109B1 (en) | 2013-04-15 | 2023-02-07 | Monolithic 3D Inc | Automation methods for 3D integrated circuits and devices |
US11487928B2 (en) | 2013-04-15 | 2022-11-01 | Monolithic 3D Inc. | Automation for monolithic 3D devices |
US11341309B1 (en) | 2013-04-15 | 2022-05-24 | Monolithic 3D Inc. | Automation for monolithic 3D devices |
US11030371B2 (en) | 2013-04-15 | 2021-06-08 | Monolithic 3D Inc. | Automation for monolithic 3D devices |
EP2884542A3 (en) * | 2013-12-10 | 2015-09-02 | IMEC vzw | Integrated circuit device with power gating switch in back end of line |
US9129956B2 (en) * | 2013-12-11 | 2015-09-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Device having multiple-layer pins in memory MUX1 layout |
US11107808B1 (en) | 2014-01-28 | 2021-08-31 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US10297586B2 (en) | 2015-03-09 | 2019-05-21 | Monolithic 3D Inc. | Methods for processing a 3D semiconductor device |
US11031394B1 (en) | 2014-01-28 | 2021-06-08 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US9379246B2 (en) * | 2014-03-05 | 2016-06-28 | Sandisk Technologies Inc. | Vertical thin film transistor selection devices and methods of fabrication |
US9412736B2 (en) * | 2014-06-05 | 2016-08-09 | Globalfoundries Inc. | Embedding semiconductor devices in silicon-on-insulator wafers connected using through silicon vias |
US9985026B2 (en) * | 2014-08-15 | 2018-05-29 | Taiwan Semiconductor Manufacturing Co., Ltd. | Transistor, integrated circuit and method of fabricating the same |
EP3007224A1 (en) * | 2014-10-08 | 2016-04-13 | Nxp B.V. | Metallisation for semiconductor device |
US20160118404A1 (en) * | 2014-10-09 | 2016-04-28 | Haibing Peng | Three-dimensional non-volatile ferroelectric random access memory |
US9589979B2 (en) * | 2014-11-19 | 2017-03-07 | Macronix International Co., Ltd. | Vertical and 3D memory devices and methods of manufacturing the same |
US10950722B2 (en) * | 2014-12-31 | 2021-03-16 | Stmicroelectronics, Inc. | Vertical gate all-around transistor |
US9431268B2 (en) | 2015-01-05 | 2016-08-30 | Lam Research Corporation | Isotropic atomic layer etch for silicon and germanium oxides |
US9425041B2 (en) | 2015-01-06 | 2016-08-23 | Lam Research Corporation | Isotropic atomic layer etch for silicon oxides using no activation |
US11011507B1 (en) | 2015-04-19 | 2021-05-18 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US10825779B2 (en) | 2015-04-19 | 2020-11-03 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US11056468B1 (en) | 2015-04-19 | 2021-07-06 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US10381328B2 (en) | 2015-04-19 | 2019-08-13 | Monolithic 3D Inc. | Semiconductor device and structure |
US11956952B2 (en) | 2015-08-23 | 2024-04-09 | Monolithic 3D Inc. | Semiconductor memory device and structure |
US9460770B1 (en) | 2015-09-01 | 2016-10-04 | Micron Technology, Inc. | Methods of operating ferroelectric memory cells, and related ferroelectric memory cells |
JP6089081B1 (ja) * | 2015-09-16 | 2017-03-01 | 株式会社東芝 | 磁気メモリ |
CN115942752A (zh) | 2015-09-21 | 2023-04-07 | 莫诺利特斯3D有限公司 | 3d半导体器件和结构 |
US11978731B2 (en) | 2015-09-21 | 2024-05-07 | Monolithic 3D Inc. | Method to produce a multi-level semiconductor memory device and structure |
US10522225B1 (en) | 2015-10-02 | 2019-12-31 | Monolithic 3D Inc. | Semiconductor device with non-volatile memory |
US11114464B2 (en) | 2015-10-24 | 2021-09-07 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US12016181B2 (en) | 2015-10-24 | 2024-06-18 | Monolithic 3D Inc. | 3D semiconductor device and structure with logic and memory |
US10847540B2 (en) | 2015-10-24 | 2020-11-24 | Monolithic 3D Inc. | 3D semiconductor memory device and structure |
US10418369B2 (en) | 2015-10-24 | 2019-09-17 | Monolithic 3D Inc. | Multi-level semiconductor memory device and structure |
US11296115B1 (en) | 2015-10-24 | 2022-04-05 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US11991884B1 (en) | 2015-10-24 | 2024-05-21 | Monolithic 3D Inc. | 3D semiconductor device and structure with logic and memory |
US11114427B2 (en) | 2015-11-07 | 2021-09-07 | Monolithic 3D Inc. | 3D semiconductor processor and memory device and structure |
US11937422B2 (en) | 2015-11-07 | 2024-03-19 | Monolithic 3D Inc. | Semiconductor memory device and structure |
US9754660B2 (en) | 2015-11-19 | 2017-09-05 | Samsung Electronics Co., Ltd. | Semiconductor device |
JP6286612B2 (ja) * | 2015-12-18 | 2018-02-28 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッドUnisantis Electronics Singapore Pte Ltd. | Sgtを有する半導体装置及びその製造方法 |
US10128253B2 (en) | 2016-01-29 | 2018-11-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Two-port SRAM structure |
US10043796B2 (en) | 2016-02-01 | 2018-08-07 | Qualcomm Incorporated | Vertically stacked nanowire field effect transistors |
FR3049761B1 (fr) * | 2016-03-31 | 2018-10-05 | Soitec | Procede de fabrication d'une structure pour former un circuit integre monolithique tridimensionnel |
WO2018044454A1 (en) * | 2016-08-31 | 2018-03-08 | Micron Technology, Inc. | Memory cells and memory arrays |
US10438838B2 (en) * | 2016-09-01 | 2019-10-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor structure and related method |
US11869591B2 (en) | 2016-10-10 | 2024-01-09 | Monolithic 3D Inc. | 3D memory devices and structures with control circuits |
US11251149B2 (en) | 2016-10-10 | 2022-02-15 | Monolithic 3D Inc. | 3D memory device and structure |
US11711928B2 (en) | 2016-10-10 | 2023-07-25 | Monolithic 3D Inc. | 3D memory devices and structures with control circuits |
US11329059B1 (en) | 2016-10-10 | 2022-05-10 | Monolithic 3D Inc. | 3D memory devices and structures with thinned single crystal substrates |
US11930648B1 (en) | 2016-10-10 | 2024-03-12 | Monolithic 3D Inc. | 3D memory devices and structures with metal layers |
US11812620B2 (en) | 2016-10-10 | 2023-11-07 | Monolithic 3D Inc. | 3D DRAM memory devices and structures with control circuits |
US10361128B2 (en) * | 2017-01-11 | 2019-07-23 | International Business Machines Corporation | 3D vertical FET with top and bottom gate contacts |
WO2018132250A1 (en) | 2017-01-12 | 2018-07-19 | Micron Technology, Inc. | Memory cells, arrays of two transistor-one capacitor memory cells, methods of forming an array of two transistor-one capacitor memory cells, and methods used in fabricating integrated circuitry |
US9875784B1 (en) * | 2017-04-13 | 2018-01-23 | Qualcomm Incorporated | Three-dimensional (3D) ferroelectric dipole metal-oxide semiconductor ferroelectric field-effect transistor (MOSFeFET) system, and related methods and systems |
US20180358352A1 (en) * | 2017-06-08 | 2018-12-13 | Silicet, LLC | Structure, method, and circuit for electrostatic discharge protection utilizing a rectifying contact |
WO2019018124A1 (en) * | 2017-07-17 | 2019-01-24 | Micron Technology, Inc. | MEMORY CIRCUITS |
JP2019057554A (ja) * | 2017-09-20 | 2019-04-11 | 東芝メモリ株式会社 | 記憶装置 |
US10896979B2 (en) * | 2017-09-28 | 2021-01-19 | International Business Machines Corporation | Compact vertical injection punch through floating gate analog memory and a manufacture thereof |
US10833078B2 (en) * | 2017-12-04 | 2020-11-10 | Tokyo Electron Limited | Semiconductor apparatus having stacked gates and method of manufacture thereof |
US11222970B2 (en) | 2017-12-28 | 2022-01-11 | Integrated Silicon Solution, (Cayman) Inc. | Perpendicular magnetic tunnel junction memory cells having vertical channels |
US10658425B2 (en) | 2017-12-28 | 2020-05-19 | Spin Memory, Inc. | Methods of forming perpendicular magnetic tunnel junction memory cells having vertical channels |
US10468293B2 (en) * | 2017-12-28 | 2019-11-05 | Spin Memory, Inc. | Methods of forming perpendicular magnetic tunnel junction memory cells having vertical channels |
US10460778B2 (en) | 2017-12-29 | 2019-10-29 | Spin Memory, Inc. | Perpendicular magnetic tunnel junction memory cells having shared source contacts |
US10283411B1 (en) * | 2018-01-02 | 2019-05-07 | International Business Machines Corporation | Stacked vertical transistor device for three-dimensional monolithic integration |
US10790271B2 (en) * | 2018-04-17 | 2020-09-29 | International Business Machines Corporation | Perpendicular stacked field-effect transistor device |
US10840254B2 (en) | 2018-05-22 | 2020-11-17 | Macronix International Co., Ltd. | Pitch scalable 3D NAND |
WO2019226341A1 (en) | 2018-05-25 | 2019-11-28 | Lam Research Corporation | Thermal atomic layer etch with rapid temperature cycling |
US11637022B2 (en) | 2018-07-09 | 2023-04-25 | Lam Research Corporation | Electron excitation atomic layer etch |
JP2020047642A (ja) | 2018-09-14 | 2020-03-26 | キオクシア株式会社 | 半導体記憶装置 |
US10607938B1 (en) * | 2018-10-26 | 2020-03-31 | International Business Machines Corporation | Power distribution networks for monolithic three-dimensional semiconductor integrated circuit devices |
CN111293137A (zh) * | 2018-12-07 | 2020-06-16 | 中国科学院上海微系统与信息技术研究所 | 基于二维cmos的三维mram存储结构及其制作方法 |
US11985806B2 (en) * | 2018-12-26 | 2024-05-14 | Micron Technology, Inc. | Vertical 2-transistor memory cell |
CN111435658B (zh) * | 2019-01-14 | 2023-05-23 | 联华电子股份有限公司 | 形成存储器堆叠结构的方法 |
US11107827B2 (en) | 2019-02-28 | 2021-08-31 | International Business Machines Corporation | Integration of split gate metal-oxide-nitride-oxide-semiconductor memory with vertical FET |
CN111755445A (zh) * | 2019-03-29 | 2020-10-09 | 长鑫存储技术有限公司 | 半导体结构的制作方法 |
US11018156B2 (en) | 2019-04-08 | 2021-05-25 | Monolithic 3D Inc. | 3D memory semiconductor devices and structures |
US11763864B2 (en) | 2019-04-08 | 2023-09-19 | Monolithic 3D Inc. | 3D memory semiconductor devices and structures with bit-line pillars |
US11296106B2 (en) | 2019-04-08 | 2022-04-05 | Monolithic 3D Inc. | 3D memory semiconductor devices and structures |
US11158652B1 (en) | 2019-04-08 | 2021-10-26 | Monolithic 3D Inc. | 3D memory semiconductor devices and structures |
US10892016B1 (en) | 2019-04-08 | 2021-01-12 | Monolithic 3D Inc. | 3D memory semiconductor devices and structures |
US11228174B1 (en) | 2019-05-30 | 2022-01-18 | Silicet, LLC | Source and drain enabled conduction triggers and immunity tolerance for integrated circuits |
US10971447B2 (en) * | 2019-06-24 | 2021-04-06 | International Business Machines Corporation | BEOL electrical fuse |
KR20210012710A (ko) | 2019-07-26 | 2021-02-03 | 에스케이하이닉스 주식회사 | 수직형 메모리 장치 및 수직형 메모리 장치 제조 방법 |
US11411025B2 (en) | 2019-10-23 | 2022-08-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | 3D ferroelectric memory |
DE102020119199A1 (de) | 2019-10-23 | 2021-04-29 | Taiwan Semiconductor Manufacturing Co. Ltd. | 3d-ferroelektrikum-speicher |
KR20210052928A (ko) * | 2019-11-01 | 2021-05-11 | 에스케이하이닉스 주식회사 | 반도체 메모리 장치 및 그 제조방법 |
US10892362B1 (en) | 2019-11-06 | 2021-01-12 | Silicet, LLC | Devices for LDMOS and other MOS transistors with hybrid contact |
FR3105748B1 (fr) * | 2019-12-26 | 2022-09-02 | Aledia | Dispositif pour traitement par laser et procédé de traitement au laser |
US11476248B2 (en) * | 2019-12-26 | 2022-10-18 | Taiwan Semiconductor Manufacturing Co., Ltd. | Three dimensional integrated circuit and fabrication thereof |
US11302865B2 (en) * | 2019-12-26 | 2022-04-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Phase-change memory with two-portioned phase-change layer |
KR102226206B1 (ko) * | 2020-02-06 | 2021-03-11 | 포항공과대학교 산학협력단 | 이중 pn 접합을 포함하는 메모리 소자 및 그 구동방법 |
DE102020125995A1 (de) * | 2020-05-28 | 2021-12-02 | Taiwan Semiconductor Manufacturing Co. Ltd. | Passivierungsschicht für epitaktischen halbleiterprozess |
US11508817B2 (en) * | 2020-05-28 | 2022-11-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Passivation layer for epitaxial semiconductor process |
US11430797B2 (en) | 2020-06-30 | 2022-08-30 | Qualcomm Incorporated | Package embedded programmable resistor for voltage droop mitigation |
US11527623B2 (en) * | 2020-07-28 | 2022-12-13 | Micron Technology, Inc. | Integrated assemblies and methods of forming integrated assemblies |
EP4200911A1 (en) | 2020-12-04 | 2023-06-28 | Amplexia, LLC | Ldmos with self-aligned body and hybrid source |
CN113053900B (zh) * | 2021-03-22 | 2023-01-20 | 长鑫存储技术有限公司 | 半导体结构及其制造方法 |
CN113078625B (zh) * | 2021-03-24 | 2023-02-17 | 重庆邮电大学 | 一种基于硫系化合物的浪涌保护阵列及制备方法 |
CN113206099B (zh) * | 2021-05-06 | 2024-05-28 | 长江先进存储产业创新中心有限责任公司 | 半导体器件及其制备方法 |
CN113345487B (zh) * | 2021-06-04 | 2024-06-07 | 长江先进存储产业创新中心有限责任公司 | 存储器、存储器系统及存储器的制造方法 |
CN115548150A (zh) * | 2022-10-13 | 2022-12-30 | 隆基绿能科技股份有限公司 | 太阳能电池组件 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57113267A (en) * | 1980-11-19 | 1982-07-14 | Ibm | Method of producing semiconductor device |
JPH04192368A (ja) * | 1990-11-23 | 1992-07-10 | Sony Corp | 縦チャンネルfet |
JP2001230326A (ja) * | 2000-02-17 | 2001-08-24 | Nec Corp | 半導体集積回路装置およびその駆動方法 |
JP2001250913A (ja) * | 1999-12-28 | 2001-09-14 | Mitsumasa Koyanagi | 3次元半導体集積回路装置及びその製造方法 |
JP2003514399A (ja) * | 1999-11-15 | 2003-04-15 | インフィネオン テクノロジーズ アクチエンゲゼルシャフト | 少なくとも1つのコンデンサおよびそれに接続された少なくとも1つのトランジスタを有する回路構造 |
Family Cites Families (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4296428A (en) * | 1979-06-28 | 1981-10-20 | Rockwell International Corporation | Merged field effect transistor circuit and fabrication process |
US4740826A (en) * | 1985-09-25 | 1988-04-26 | Texas Instruments Incorporated | Vertical inverter |
US5216263A (en) * | 1990-11-29 | 1993-06-01 | Xerox Corporation | High density, independently addressable, surface emitting semiconductor laser-light emitting diode arrays |
JP2991489B2 (ja) * | 1990-11-30 | 1999-12-20 | 株式会社東芝 | 半導体装置 |
FR2747506B1 (fr) * | 1996-04-11 | 1998-05-15 | Commissariat Energie Atomique | Procede d'obtention d'un film mince de materiau semiconducteur comprenant notamment des composants electroniques |
FR2748851B1 (fr) * | 1996-05-15 | 1998-08-07 | Commissariat Energie Atomique | Procede de realisation d'une couche mince de materiau semiconducteur |
US7470598B2 (en) * | 2004-06-21 | 2008-12-30 | Sang-Yun Lee | Semiconductor layer structure and method of making the same |
US6191007B1 (en) * | 1997-04-28 | 2001-02-20 | Denso Corporation | Method for manufacturing a semiconductor substrate |
US6159825A (en) * | 1997-05-12 | 2000-12-12 | Silicon Genesis Corporation | Controlled cleavage thin film separation process using a reusable substrate |
FR2765398B1 (fr) * | 1997-06-25 | 1999-07-30 | Commissariat Energie Atomique | Structure a composant microelectronique en materiau semi-conducteur difficile a graver et a trous metallises |
JP4032454B2 (ja) * | 1997-06-27 | 2008-01-16 | ソニー株式会社 | 三次元回路素子の製造方法 |
US5882987A (en) * | 1997-08-26 | 1999-03-16 | International Business Machines Corporation | Smart-cut process for the production of thin semiconductor material films |
US6667511B1 (en) * | 1997-12-18 | 2003-12-23 | Advanced Micro Devices, Inc. | NAND type core cell structure for a high density flash memory device having a unique select gate transistor configuration |
US5943574A (en) * | 1998-02-23 | 1999-08-24 | Motorola, Inc. | Method of fabricating 3D multilayer semiconductor circuits |
US6194290B1 (en) * | 1998-03-09 | 2001-02-27 | Intersil Corporation | Methods for making semiconductor devices by low temperature direct bonding |
US6057212A (en) * | 1998-05-04 | 2000-05-02 | International Business Machines Corporation | Method for making bonded metal back-plane substrates |
US6423614B1 (en) * | 1998-06-30 | 2002-07-23 | Intel Corporation | Method of delaminating a thin film using non-thermal techniques |
US6242324B1 (en) * | 1999-08-10 | 2001-06-05 | The United States Of America As Represented By The Secretary Of The Navy | Method for fabricating singe crystal materials over CMOS devices |
JP2001102523A (ja) * | 1999-09-28 | 2001-04-13 | Sony Corp | 薄膜デバイスおよびその製造方法 |
US6391658B1 (en) * | 1999-10-26 | 2002-05-21 | International Business Machines Corporation | Formation of arrays of microelectronic elements |
US6525415B2 (en) * | 1999-12-28 | 2003-02-25 | Fuji Xerox Co., Ltd. | Three-dimensional semiconductor integrated circuit apparatus and manufacturing method therefor |
US6871396B2 (en) * | 2000-02-09 | 2005-03-29 | Matsushita Electric Industrial Co., Ltd. | Transfer material for wiring substrate |
US6635552B1 (en) * | 2000-06-12 | 2003-10-21 | Micron Technology, Inc. | Methods of forming semiconductor constructions |
US6429484B1 (en) * | 2000-08-07 | 2002-08-06 | Advanced Micro Devices, Inc. | Multiple active layer structure and a method of making such a structure |
US6600173B2 (en) | 2000-08-30 | 2003-07-29 | Cornell Research Foundation, Inc. | Low temperature semiconductor layering and three-dimensional electronic circuits using the layering |
US6355501B1 (en) | 2000-09-21 | 2002-03-12 | International Business Machines Corporation | Three-dimensional chip stacking assembly |
JP3940596B2 (ja) | 2001-05-24 | 2007-07-04 | 松下電器産業株式会社 | 照明光源 |
DE10200399B4 (de) * | 2002-01-08 | 2008-03-27 | Advanced Micro Devices, Inc., Sunnyvale | Verfahren zur Erzeugung einer dreidimensional integrierten Halbleitervorrichtung und dreidimensional integrierte Halbleitervorrichtung |
US6661085B2 (en) * | 2002-02-06 | 2003-12-09 | Intel Corporation | Barrier structure against corrosion and contamination in three-dimensional (3-D) wafer-to-wafer vertical stack |
US7138685B2 (en) * | 2002-12-11 | 2006-11-21 | International Business Machines Corporation | Vertical MOSFET SRAM cell |
US6821826B1 (en) * | 2003-09-30 | 2004-11-23 | International Business Machines Corporation | Three dimensional CMOS integrated circuits having device layers built on different crystal oriented wafers |
-
2004
- 2004-06-21 US US10/873,969 patent/US7052941B2/en not_active Expired - Fee Related
- 2004-06-23 EP EP04776960.9A patent/EP1636831B1/en not_active Expired - Lifetime
- 2004-06-23 WO PCT/US2004/020122 patent/WO2005010934A2/en active Application Filing
- 2004-06-23 JP JP2006517574A patent/JP5202842B2/ja not_active Expired - Fee Related
-
2006
- 2006-03-17 US US11/378,059 patent/US20060275962A1/en not_active Abandoned
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57113267A (en) * | 1980-11-19 | 1982-07-14 | Ibm | Method of producing semiconductor device |
JPH04192368A (ja) * | 1990-11-23 | 1992-07-10 | Sony Corp | 縦チャンネルfet |
JP2003514399A (ja) * | 1999-11-15 | 2003-04-15 | インフィネオン テクノロジーズ アクチエンゲゼルシャフト | 少なくとも1つのコンデンサおよびそれに接続された少なくとも1つのトランジスタを有する回路構造 |
JP2001250913A (ja) * | 1999-12-28 | 2001-09-14 | Mitsumasa Koyanagi | 3次元半導体集積回路装置及びその製造方法 |
JP2001230326A (ja) * | 2000-02-17 | 2001-08-24 | Nec Corp | 半導体集積回路装置およびその駆動方法 |
Cited By (49)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009514220A (ja) * | 2005-10-25 | 2009-04-02 | フリースケール セミコンダクター インコーポレイテッド | 逆t型チャネルトランジスタを製造する方法 |
WO2009095998A1 (ja) * | 2008-01-29 | 2009-08-06 | Unisantis Electronics (Japan) Ltd. | 半導体記憶装置 |
JP2011187949A (ja) * | 2010-02-10 | 2011-09-22 | Semiconductor Energy Lab Co Ltd | 電界効果トランジスタ |
JP2013536572A (ja) * | 2010-07-19 | 2013-09-19 | マイクロン テクノロジー, インク. | 高密度サイリスタ・ランダムアクセスメモリ装置及び方法 |
JP2012178554A (ja) * | 2011-02-02 | 2012-09-13 | Semiconductor Energy Lab Co Ltd | 半導体メモリ装置 |
JP2012186468A (ja) * | 2011-02-17 | 2012-09-27 | Semiconductor Energy Lab Co Ltd | 半導体メモリ装置および半導体メモリ装置の作製方法 |
US9257432B2 (en) | 2011-02-17 | 2016-02-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor memory device and method of manufacturing semiconductor memory device |
US9673823B2 (en) | 2011-05-18 | 2017-06-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of driving semiconductor device |
US11356097B2 (en) | 2011-05-18 | 2022-06-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of driving semiconductor device |
US10135446B2 (en) | 2011-05-18 | 2018-11-20 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of driving semiconductor device |
JP2016164988A (ja) * | 2011-05-18 | 2016-09-08 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP2012244079A (ja) * | 2011-05-24 | 2012-12-10 | Hitachi Ltd | 磁気メモリ |
US9514792B2 (en) | 2011-09-15 | 2016-12-06 | Longitude Semiconductor S.A.R.L. | Semiconductor device having stacked layers |
JP2013065638A (ja) * | 2011-09-15 | 2013-04-11 | Elpida Memory Inc | 半導体装置 |
CN102306655A (zh) * | 2011-09-29 | 2012-01-04 | 清华大学 | 一种三维存储器阵列结构及其制造方法 |
JP2013161878A (ja) * | 2012-02-02 | 2013-08-19 | Renesas Electronics Corp | 半導体装置、および半導体装置の製造方法 |
US9368403B2 (en) | 2012-02-02 | 2016-06-14 | Renesas Electronics Corporation | Method for manufacturing a semiconductor device |
US9153588B2 (en) | 2012-02-02 | 2015-10-06 | Renesas Electronics Corporation | Semiconductor device and a method for manufacturing a semiconductor device |
US11923372B2 (en) | 2012-02-29 | 2024-03-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
JP2022070960A (ja) * | 2012-02-29 | 2022-05-13 | 株式会社半導体エネルギー研究所 | 半導体装置 |
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US10229948B2 (en) | 2012-09-28 | 2019-03-12 | Canon Kabushiki Kaisha | Semiconductor apparatus |
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Also Published As
Publication number | Publication date |
---|---|
EP1636831A4 (en) | 2008-12-31 |
US20040262635A1 (en) | 2004-12-30 |
US7052941B2 (en) | 2006-05-30 |
EP1636831A2 (en) | 2006-03-22 |
US20060275962A1 (en) | 2006-12-07 |
WO2005010934A2 (en) | 2005-02-03 |
WO2005010934A3 (en) | 2005-05-06 |
JP5202842B2 (ja) | 2013-06-05 |
EP1636831B1 (en) | 2015-04-01 |
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