JP2007266584A5 - - Google Patents
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- Publication number
- JP2007266584A5 JP2007266584A5 JP2007034686A JP2007034686A JP2007266584A5 JP 2007266584 A5 JP2007266584 A5 JP 2007266584A5 JP 2007034686 A JP2007034686 A JP 2007034686A JP 2007034686 A JP2007034686 A JP 2007034686A JP 2007266584 A5 JP2007266584 A5 JP 2007266584A5
- Authority
- JP
- Japan
- Prior art keywords
- film forming
- manufacturing
- ferromagnetic layer
- forming chamber
- effect element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000000694 effects Effects 0.000 claims 36
- 238000004519 manufacturing process Methods 0.000 claims 30
- 230000005294 ferromagnetic effect Effects 0.000 claims 24
- 239000007789 gas Substances 0.000 claims 14
- 230000001590 oxidative effect Effects 0.000 claims 14
- 239000000463 material Substances 0.000 claims 13
- 239000000126 substance Substances 0.000 claims 12
- 239000000470 constituent Substances 0.000 claims 10
- 238000000034 method Methods 0.000 claims 10
- 230000015572 biosynthetic process Effects 0.000 claims 5
- 238000005192 partition Methods 0.000 claims 5
- 230000008021 deposition Effects 0.000 claims 4
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims 2
- 229910052782 aluminium Inorganic materials 0.000 claims 2
- 229910052796 boron Inorganic materials 0.000 claims 2
- 229910052804 chromium Inorganic materials 0.000 claims 2
- 229910001882 dioxygen Inorganic materials 0.000 claims 2
- 229910052732 germanium Inorganic materials 0.000 claims 2
- 229910052735 hafnium Inorganic materials 0.000 claims 2
- 229910052749 magnesium Inorganic materials 0.000 claims 2
- 229910052748 manganese Inorganic materials 0.000 claims 2
- 239000002184 metal Substances 0.000 claims 2
- 229910052751 metal Inorganic materials 0.000 claims 2
- 229910052750 molybdenum Inorganic materials 0.000 claims 2
- 229910052758 niobium Inorganic materials 0.000 claims 2
- 239000004065 semiconductor Substances 0.000 claims 2
- 229910052710 silicon Inorganic materials 0.000 claims 2
- 238000001179 sorption measurement Methods 0.000 claims 2
- 229910052715 tantalum Inorganic materials 0.000 claims 2
- 229910052719 titanium Inorganic materials 0.000 claims 2
- 229910052721 tungsten Inorganic materials 0.000 claims 2
- 229910052720 vanadium Inorganic materials 0.000 claims 2
- 229910052726 zirconium Inorganic materials 0.000 claims 2
- 239000000696 magnetic material Substances 0.000 claims 1
Priority Applications (11)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007034686A JP4782037B2 (ja) | 2006-03-03 | 2007-02-15 | 磁気抵抗効果素子の製造方法及び製造装置 |
| EP08168830A EP2037512A1 (en) | 2006-03-03 | 2007-02-26 | Method of manufacturing magneto-resistive device and apparatus for manufacturing the same |
| RU2008138423/28A RU2008138423A (ru) | 2006-03-03 | 2007-02-26 | Способ и устройство для изготовления магниторезистивного элемента |
| CN2009101467886A CN101615653B (zh) | 2006-03-03 | 2007-02-26 | 磁阻效应元件的制造方法以及制造设备 |
| PCT/JP2007/053487 WO2007105472A1 (ja) | 2006-03-03 | 2007-02-26 | 磁気抵抗効果素子の製造方法及び製造装置 |
| KR1020087024222A KR101053232B1 (ko) | 2006-03-03 | 2007-02-26 | 자기저항효과 소자의 제조방법 및 제조장치 |
| EP07714919.3A EP2015377B1 (en) | 2006-03-03 | 2007-02-26 | Method of manufacturing a magneto-resistive device |
| US12/224,646 US10629804B2 (en) | 2006-03-03 | 2007-02-26 | Method of manufacturing magnetoresistive device |
| CN201210345416.8A CN102867910B (zh) | 2006-03-03 | 2007-02-26 | 磁阻效应元件的制造方法 |
| TW096107307A TWI387966B (zh) | 2006-03-03 | 2007-03-03 | 製造磁阻效應元件的方法 |
| US13/177,237 US8367156B2 (en) | 2006-03-03 | 2011-07-06 | Method of manufacturing magnetoresistive device and apparatus for manufacturing the same |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006058748 | 2006-03-03 | ||
| JP2006058748 | 2006-03-03 | ||
| JP2007034686A JP4782037B2 (ja) | 2006-03-03 | 2007-02-15 | 磁気抵抗効果素子の製造方法及び製造装置 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008042175A Division JP4679595B2 (ja) | 2006-03-03 | 2008-02-22 | 磁気抵抗効果素子の製造方法及び製造装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2007266584A JP2007266584A (ja) | 2007-10-11 |
| JP2007266584A5 true JP2007266584A5 (enExample) | 2008-04-10 |
| JP4782037B2 JP4782037B2 (ja) | 2011-09-28 |
Family
ID=38509308
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007034686A Active JP4782037B2 (ja) | 2006-03-03 | 2007-02-15 | 磁気抵抗効果素子の製造方法及び製造装置 |
Country Status (8)
| Country | Link |
|---|---|
| US (2) | US10629804B2 (enExample) |
| EP (2) | EP2037512A1 (enExample) |
| JP (1) | JP4782037B2 (enExample) |
| KR (1) | KR101053232B1 (enExample) |
| CN (1) | CN102867910B (enExample) |
| RU (1) | RU2008138423A (enExample) |
| TW (1) | TWI387966B (enExample) |
| WO (1) | WO2007105472A1 (enExample) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8679301B2 (en) * | 2007-08-01 | 2014-03-25 | HGST Netherlands B.V. | Repeatability for RF MgO TMR barrier layer process by implementing Ti pasting |
| JP5278876B2 (ja) * | 2007-10-31 | 2013-09-04 | 独立行政法人産業技術総合研究所 | マイクロ波発振素子および検出素子 |
| WO2009096033A1 (ja) * | 2008-02-01 | 2009-08-06 | Fujitsu Limited | トンネル磁気抵抗効果素子の製造方法 |
| WO2011093334A1 (ja) | 2010-01-26 | 2011-08-04 | キヤノンアネルバ株式会社 | 成膜方法、成膜装置、および該成膜装置の制御装置 |
| US8860159B2 (en) * | 2011-10-20 | 2014-10-14 | The United States Of America As Represented By The Secretary Of The Army | Spintronic electronic device and circuits |
| JP5998654B2 (ja) * | 2012-05-31 | 2016-09-28 | 東京エレクトロン株式会社 | 真空処理装置、真空処理方法及び記憶媒体 |
| KR20150006459A (ko) * | 2013-02-05 | 2015-01-16 | 캐논 아네르바 가부시키가이샤 | 성막 장치 |
| GB2561790B (en) * | 2016-02-01 | 2021-05-12 | Canon Anelva Corp | Manufacturing method of magneto-resistive effect device |
| JP7141989B2 (ja) * | 2018-09-28 | 2022-09-26 | 芝浦メカトロニクス株式会社 | 成膜装置 |
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| US3616403A (en) * | 1968-10-25 | 1971-10-26 | Ibm | Prevention of inversion of p-type semiconductor material during rf sputtering of quartz |
| US4782477A (en) * | 1985-09-30 | 1988-11-01 | Kabushiki Kaisha Toshiba | Optical recording medium with fluorine resin adhesive |
| JPH0250959A (ja) | 1988-08-10 | 1990-02-20 | Nok Corp | 希土類金属薄膜の製膜方法および製膜装置 |
| JPH0314227A (ja) | 1989-06-13 | 1991-01-22 | Sharp Corp | 半導体装置の製造方法 |
| JPH0397855A (ja) | 1989-09-07 | 1991-04-23 | Shimadzu Corp | スパッタリング装置 |
| JPH0499271A (ja) | 1990-08-10 | 1992-03-31 | Olympus Optical Co Ltd | 多層薄膜の作製方法およびその装置 |
| JP2857719B2 (ja) * | 1990-09-21 | 1999-02-17 | 工業技術院長 | トンネル障壁の堆積方法 |
| JPH04202768A (ja) * | 1990-11-30 | 1992-07-23 | Nippon Kentetsu Co Ltd | スパッタリング装置のターゲット汚染防止方法 |
| WO1992016671A1 (fr) * | 1991-03-20 | 1992-10-01 | Canon Kabushiki Kaisha | Procede et dispositif de formation d'une couche mince par pulverisation |
| US5367285A (en) * | 1993-02-26 | 1994-11-22 | Lake Shore Cryotronics, Inc. | Metal oxy-nitride resistance films and methods of making the same |
| TW335504B (en) | 1996-07-09 | 1998-07-01 | Applied Materials Inc | A method for providing full-face high density plasma deposition |
| US5707498A (en) * | 1996-07-12 | 1998-01-13 | Applied Materials, Inc. | Avoiding contamination from induction coil in ionized sputtering |
| JP2871670B1 (ja) | 1997-03-26 | 1999-03-17 | 富士通株式会社 | 強磁性トンネル接合磁気センサ、その製造方法、磁気ヘッド、および磁気記録／再生装置 |
| JP4166302B2 (ja) | 1997-08-06 | 2008-10-15 | 凸版印刷株式会社 | カラーフィルタ及びその製造方法 |
| JPH11117064A (ja) | 1997-10-09 | 1999-04-27 | Anelva Corp | スパッタリング装置 |
| JPH11152564A (ja) | 1997-11-17 | 1999-06-08 | Murata Mfg Co Ltd | プリスパッタ方法および装置 |
| US6303218B1 (en) | 1998-03-20 | 2001-10-16 | Kabushiki Kaisha Toshiba | Multi-layered thin-film functional device and magnetoresistance effect element |
| JP4433528B2 (ja) | 1998-12-08 | 2010-03-17 | ソニー株式会社 | 固体撮像素子及びその製造方法 |
| KR100307074B1 (ko) * | 1999-09-08 | 2001-09-24 | 이종구 | 다원계 증착을 위한 표적표면 오염 방지용 나누개 및 기판 오염 방지용 가리개를 가진 증착조 |
| JP4526139B2 (ja) | 1999-10-13 | 2010-08-18 | キヤノンアネルバ株式会社 | 基板処理装置及びスパッタリング装置 |
| US6551471B1 (en) | 1999-11-30 | 2003-04-22 | Canon Kabushiki Kaisha | Ionization film-forming method and apparatus |
| JP2001176027A (ja) * | 1999-12-14 | 2001-06-29 | Nec Corp | 磁気抵抗効果ヘッド及びこれを用いた磁気記憶装置 |
| JP4364380B2 (ja) * | 1999-12-28 | 2009-11-18 | 株式会社半導体エネルギー研究所 | 薄膜作製装置及び薄膜作製方法 |
| JP2001295024A (ja) | 2000-04-14 | 2001-10-26 | Nikko Materials Co Ltd | 薄膜形成装置用部材及びその製造方法 |
| JP2002167661A (ja) * | 2000-11-30 | 2002-06-11 | Anelva Corp | 磁性多層膜作製装置 |
| US20030029715A1 (en) | 2001-07-25 | 2003-02-13 | Applied Materials, Inc. | An Apparatus For Annealing Substrates In Physical Vapor Deposition Systems |
| JP2003069011A (ja) | 2001-08-27 | 2003-03-07 | Hitachi Ltd | 半導体装置とその製造方法 |
| SG108872A1 (en) * | 2001-10-24 | 2005-02-28 | Toda Kogyo Corp | Perpendicular magnetic recording medium |
| US6923860B1 (en) * | 2002-03-28 | 2005-08-02 | Seagate Technology Llc | Oxidation of material for tunnel magneto-resistive sensors |
| US6828260B2 (en) * | 2002-10-29 | 2004-12-07 | Hewlett-Packard Development Company, L.P. | Ultra-violet treatment of a tunnel barrier layer through an overlayer a tunnel junction device |
| JP4447207B2 (ja) | 2002-11-07 | 2010-04-07 | 富士通マイクロエレクトロニクス株式会社 | 半導体製造装置及び半導体装置の製造方法 |
| KR100686494B1 (ko) | 2002-12-30 | 2007-02-23 | 엘지.필립스 엘시디 주식회사 | 금속막 증착을 위한 스퍼터와 스퍼터를 이용한 액정 표시장치의 제조법 |
| JP2004235223A (ja) | 2003-01-28 | 2004-08-19 | Anelva Corp | 磁性多層膜作製の装置および方法、膜作製の評価方法、膜作製の制御方法 |
| US7318236B2 (en) | 2003-02-27 | 2008-01-08 | Microsoft Corporation | Tying a digital license to a user and tying the user to multiple computing devices in a digital rights management (DRM) system |
| JP2005298894A (ja) | 2004-04-12 | 2005-10-27 | Fujitsu Ltd | ターゲットのクリーニング方法及び物理的堆積装置 |
| JP2005333106A (ja) | 2004-04-20 | 2005-12-02 | Ken Takahashi | 交換結合素子とその製造方法並びに交換結合素子を具備したデバイス |
| US7270896B2 (en) | 2004-07-02 | 2007-09-18 | International Business Machines Corporation | High performance magnetic tunnel barriers with amorphous materials |
| US20060042929A1 (en) | 2004-08-26 | 2006-03-02 | Daniele Mauri | Method for reactive sputter deposition of an ultra-thin metal oxide film |
| US20060042930A1 (en) * | 2004-08-26 | 2006-03-02 | Daniele Mauri | Method for reactive sputter deposition of a magnesium oxide (MgO) tunnel barrier in a magnetic tunnel junction |
| JP4292128B2 (ja) | 2004-09-07 | 2009-07-08 | キヤノンアネルバ株式会社 | 磁気抵抗効果素子の製造方法 |
| US7443639B2 (en) * | 2005-04-04 | 2008-10-28 | International Business Machines Corporation | Magnetic tunnel junctions including crystalline and amorphous tunnel barrier materials |
| US7430135B2 (en) * | 2005-12-23 | 2008-09-30 | Grandis Inc. | Current-switched spin-transfer magnetic devices with reduced spin-transfer switching current density |
-
2007
- 2007-02-15 JP JP2007034686A patent/JP4782037B2/ja active Active
- 2007-02-26 EP EP08168830A patent/EP2037512A1/en not_active Withdrawn
- 2007-02-26 US US12/224,646 patent/US10629804B2/en active Active
- 2007-02-26 WO PCT/JP2007/053487 patent/WO2007105472A1/ja not_active Ceased
- 2007-02-26 EP EP07714919.3A patent/EP2015377B1/en active Active
- 2007-02-26 CN CN201210345416.8A patent/CN102867910B/zh active Active
- 2007-02-26 KR KR1020087024222A patent/KR101053232B1/ko active Active
- 2007-02-26 RU RU2008138423/28A patent/RU2008138423A/ru unknown
- 2007-03-03 TW TW096107307A patent/TWI387966B/zh active
-
2011
- 2011-07-06 US US13/177,237 patent/US8367156B2/en active Active