TWI456607B - 旋轉閥型通道磁阻元件之製造方法 - Google Patents
旋轉閥型通道磁阻元件之製造方法 Download PDFInfo
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- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3464—Sputtering using more than one target
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- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
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- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
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- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/098—Magnetoresistive devices comprising tunnel junctions, e.g. tunnel magnetoresistance sensors
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- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
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- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
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- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
- H01F10/3272—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn by use of anti-parallel coupled [APC] ferromagnetic layers, e.g. artificial ferrimagnets [AFI], artificial [AAF] or synthetic [SAF] anti-ferromagnets
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- H01F41/30—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE]
- H01F41/302—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices
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- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B2005/3996—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices
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- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
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- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/325—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being noble metal
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Claims (2)
- 一種旋轉閥型通道磁阻元件之製造方法,係為在基板上,將反強磁性層、和第1磁化固定層、和交換結合用非磁性層、和第2磁化固定層、和通道阻障層、以及磁化自由層,依序作層積之旋轉閥型通道磁阻元件之製造方法,其特徵為,具備有:第1工程,係使用使濺鍍粒子對於基板而從傾斜方向入射之濺鍍標靶,而一面使前述基板旋轉一面在前述基板上進行前述反強磁性層之濺鍍成膜;和第2工程,係使用相對於前述基板之法線而軸對稱地作設置之濺鍍標靶,並一面在支持前述濺鍍標靶之濺鍍陰極間對於電力作切換,一面將前述基板保持為靜止之非旋轉的狀態,而在前述反強磁性層上進行前述第1磁化固定層之濺鍍成膜;和第3工程,係使用相對於前述基板之法線而軸對稱地作設置之濺鍍標靶,並一面在支持前述濺鍍標靶之濺鍍陰極間對於電力作切換,一面將前述基板保持為靜止之非旋轉的狀態,而在前述交換結合用非磁性層上進行前述第2磁化固定層之濺鍍成膜。
- 一種旋轉閥型通道磁阻元件之製造方法,係為在基板上,將反強磁性層、和第1磁化固定層、和交換結合用非磁性層、和第2磁化固定層、和通道阻障層、以及磁化自由層,依序作層積之磁阻元件之製造方法, 其特徵為,具備有:第1工程,係使用使濺鍍粒子對於基板而從傾斜方向入射之濺鍍標靶,而一面使前述基板旋轉一面在前述基板上進行前述反強磁性層之濺鍍成膜;和第2工程,係使用以與前述基板相對向之方式而作設置之濺鍍標靶,並一面使前述基板左右傾斜移動,一面將前述基板保持為靜止之非旋轉的狀態,而在前述反強磁性層上進行前述第1磁化固定層之濺鍍成膜;和第3工程,係使用以與前述基板相對向之方式而作設置之濺鍍標靶,並一面使前述基板左右傾斜移動,一面將前述基板保持為靜止之非旋轉的狀態,而在前述交換結合用非磁性層上進行前述第2磁化固定層之濺鍍成膜。
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TW098105280A TWI413992B (zh) | 2008-06-20 | 2009-02-19 | Rotary valve type channel magnetoresistive element manufacturing method, program, memory media |
TW102131280A TWI456607B (zh) | 2008-06-20 | 2009-02-19 | 旋轉閥型通道磁阻元件之製造方法 |
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US (1) | US8932438B2 (zh) |
JP (2) | JPWO2009154009A1 (zh) |
GB (1) | GB2474167B (zh) |
TW (2) | TWI413992B (zh) |
WO (1) | WO2009154009A1 (zh) |
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KR101786868B1 (ko) | 2010-12-28 | 2017-10-18 | 캐논 아네르바 가부시키가이샤 | 제조방법 |
US8755154B2 (en) * | 2011-09-13 | 2014-06-17 | Seagate Technology Llc | Tuned angled uniaxial anisotropy in trilayer magnetic sensors |
US9036308B2 (en) * | 2011-09-21 | 2015-05-19 | Seagate Technology Llc | Varyinig morphology in magnetic sensor sub-layers |
US9240200B2 (en) * | 2012-11-28 | 2016-01-19 | Seagate Technology Llc | Magnetic element with crossed anisotropies |
US9034150B2 (en) * | 2012-11-29 | 2015-05-19 | Seagate Technology Llc | Thin film with tuned anisotropy and magnetic moment |
PL2846334T3 (pl) * | 2013-09-05 | 2018-04-30 | Deutsches Elektronen-Synchrotron Desy | Sposób wytwarzania wielowarstwowego urządzenia magnetoelektronicznego i urządzenie magnetoelektroniczne |
CN105612737B (zh) * | 2013-10-10 | 2019-04-30 | 杜比实验室特许公司 | 在增强动态范围投影仪上显示数字电影倡导联盟及其他内容 |
US9349391B2 (en) | 2013-12-04 | 2016-05-24 | HGST Netherlands B.V. | Controlling magnetic layer anisotropy field by oblique angle static deposition |
JP6095806B2 (ja) | 2014-02-14 | 2017-03-15 | キヤノンアネルバ株式会社 | トンネル磁気抵抗効果素子の製造方法、およびスパッタリング装置 |
JP6778866B2 (ja) | 2015-03-31 | 2020-11-04 | 国立大学法人東北大学 | 磁気抵抗効果素子、磁気メモリ装置、製造方法、動作方法、及び集積回路 |
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EP3588591A1 (en) | 2018-06-25 | 2020-01-01 | Deutsches Elektronen-Synchrotron DESY | A multilayer device having an improved antiferromagnetic pinning layer and a corresponding manufacturing method thereof |
JP2020191320A (ja) * | 2019-05-20 | 2020-11-26 | 東京エレクトロン株式会社 | 基板製造方法、及び、処理システム |
US11199594B2 (en) | 2019-08-27 | 2021-12-14 | Western Digital Technologies, Inc. | TMR sensor with magnetic tunnel junctions with a free layer having an intrinsic anisotropy |
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- 2009-01-26 JP JP2010517776A patent/JPWO2009154009A1/ja active Pending
- 2009-01-26 WO PCT/JP2009/051213 patent/WO2009154009A1/ja active Application Filing
- 2009-02-19 TW TW098105280A patent/TWI413992B/zh active
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Publication number | Priority date | Publication date | Assignee | Title |
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US20020064595A1 (en) * | 2000-11-30 | 2002-05-30 | Shuji Nomura | Magnetic multi-layer film manufacturing apparatus |
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JP5603472B2 (ja) | 2014-10-08 |
JPWO2009154009A1 (ja) | 2011-11-24 |
GB2474167B (en) | 2015-07-29 |
TW201001458A (en) | 2010-01-01 |
GB201100741D0 (en) | 2011-03-02 |
TWI413992B (zh) | 2013-11-01 |
US8932438B2 (en) | 2015-01-13 |
WO2009154009A1 (ja) | 2009-12-23 |
JP2014030030A (ja) | 2014-02-13 |
US20110139606A1 (en) | 2011-06-16 |
GB2474167A (en) | 2011-04-06 |
TW201407648A (zh) | 2014-02-16 |
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