JP2014030030A - スピンバルブ型トンネル磁気抵抗素子の製造方法 - Google Patents
スピンバルブ型トンネル磁気抵抗素子の製造方法 Download PDFInfo
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Abstract
【解決手段】基板上に、反強磁性層と、第一磁化固定層と、交換結合用非磁性層と、第二磁化固定層と、トンネルバリア層と、磁化自由層とが順に積層されたスピンバルブ型トンネル磁気抵抗素子の製造方法において、基板に対して斜め方向にスパッタ粒子を入射させるスパッタリングターゲットを用い、基板を回転させながら、基板に磁性層のスパッタ成膜を、スパッタ粒子を基板に対して一定の入射方向から一定の入射角度で斜めに入射させることで行う。
【選択図】図1
Description
基板に対して斜め方向にスパッタ粒子を入射させるスパッタリングターゲットを用い、前記基板を回転させながら、前記基板に前記反強磁性層のスパッタ成膜を行う第1工程と、
前記基板の法線に対して軸対象に設けられたスパッタリングターゲットを用い、前記スパッタリングターゲットを支持するスパッタリングカソード間で電力を切り替えながら、前記基板を静止させた非回転の状態を保ち、前記反強磁性層上に前記第一磁化固定層のスパッタ成膜を行う第2工程と、
前記基板の法線に対して軸対象に設けられたスパッタリングターゲットを用い、前記スパッタリングターゲットを支持するスパッタリングカソード間で電力を切り替えながら、前記基板を静止させた非回転の状態を保ち、前記交換結合用非磁性層上に前記第二磁化固定層のスパッタ成膜を行う第3工程と、を有することを特徴とする。
基板に対して斜め方向にスパッタ粒子を入射させるスパッタリングターゲットを用い、前記基板を回転させながら、前記基板に前記反強磁性層のスパッタ成膜を行う第1工程と、
前記基板に対向するように配置されたスパッタリングターゲットを用い、前記基板を左右に傾動し、前記基板を静止させた非回転の状態を保ち、前記反強磁性層上に前記第一磁化固定層のスパッタ成膜を行う第2工程と、
前記基板に対向するように配置されたスパッタリングターゲットを用い、前記基板を左右に傾動し、前記基板を静止させた非回転の状態を保ち、前記交換結合用非磁性層上に前記第二磁化固定層のスパッタ成膜を行う第3工程と、を有することを特徴とする。
図8は本発明の製造方法および製造装置を用いて作製したトンネル磁気抵抗素子の膜構成図である。
図10は、本発明の製造方法および製造装置を用いて作製したトンネル磁気抵抗素子の膜構成図である。
実施例1および2の磁気トンネル素子の作製に際し、第一磁化固定層の成膜を、図5に示すように、成膜の途中で成膜を一旦停止し、基板支持ホルダーを傾動軸周りに傾動させてスパッタ粒子の入射角を反転させた二方向斜め入射スパッタ成膜で行った。この場合も同様の効果が得られた。
実施例1、2および3の磁気トンネル素子において、第一磁化固定層に加えて第二磁化固定層も、一方向斜め入射スパッタ成膜もしくは二方向斜め入射スパッタ成膜することによって、交換結合用非磁性層を介した第一磁化固定層と第二磁化固定層の間の反強磁性結合磁界を向上することができた。
図12は、本発明の製造方法および製造装置を用いて作製したトンネル磁気抵抗素子の膜構成図である。
実施例5の磁気トンネル素子において、CoFe磁化自由層の成膜時に、図5に示すように、成膜の途中で成膜を一旦停止し、基板支持ホルダーを基板支持ホルダーの傾動軸周りに傾動させて、スパッタ粒子の入射方向を反転させた二方向斜め入射スパッタ成膜を行っても同様の効果が得られた。
実施例1、2、3または4において、実施例5または6のように磁化自由層の成膜時に一方向または二方向斜め入射スパッタ成膜を行い、磁化自由層にも磁気異方性を付与することによって、磁化固定層と磁化自由層の熱安定性がともに向上したトンネル磁気抵抗素子を作製することができた。
実施例1〜7で用いたトンネル磁気抵抗素子において、MgOトンネルバリア層をCuを含んだ非磁性伝導層に置き換えた巨大磁気抵抗素子にしても同様の効果が得られた。
なお、本発明の目的は、前述した実施形態の機能を実現するソフトウェアのプログラムを記録したコンピュータ可読の記憶媒体を、システムあるいは装置に供給することによっても、達成されることは言うまでもない。また、システムあるいは装置のコンピュータ(またはCPUやMPU)が記憶媒体に格納されたプログラムを読出し実行することによっても、達成されることは言うまでもない。
Claims (2)
- 基板上に、反強磁性層と、第一磁化固定層と、交換結合用非磁性層と、第二磁化固定層と、トンネルバリア層と、磁化自由層とが順に積層されたスピンバルブ型トンネル磁気抵抗素子の製造方法において、
基板に対して斜め方向にスパッタ粒子を入射させるスパッタリングターゲットを用い、前記基板を回転させながら、前記基板に前記反強磁性層のスパッタ成膜を行う第1工程と、
前記基板の法線に対して軸対象に設けられたスパッタリングターゲットを用い、前記スパッタリングターゲットを支持するスパッタリングカソード間で電力を切り替えながら、前記基板を静止させた非回転の状態を保ち、前記反強磁性層上に前記第一磁化固定層のスパッタ成膜を行う第2工程と、
前記基板の法線に対して軸対象に設けられたスパッタリングターゲットを用い、前記スパッタリングターゲットを支持するスパッタリングカソード間で電力を切り替えながら、前記基板を静止させた非回転の状態を保ち、前記交換結合用非磁性層上に前記第二磁化固定層のスパッタ成膜を行う第3工程と、
を有することを特徴とするスピンバルブ型トンネル磁気抵抗素子の製造方法。 - 基板上に、反強磁性層と、第一磁化固定層と、交換結合用非磁性層と、第二磁化固定層と、トンネルバリア層と、磁化自由層とが順に積層されたスピンバルブ型トンネル磁気抵抗素子の製造方法において、
基板に対して斜め方向にスパッタ粒子を入射させるスパッタリングターゲットを用い、前記基板を回転させながら、前記基板に前記反強磁性層のスパッタ成膜を行う第1工程と、
前記基板に対向するように配置されたスパッタリングターゲットを用い、前記基板を左右に傾動し、前記基板を静止させた非回転の状態を保ち、前記反強磁性層上に前記第一磁化固定層のスパッタ成膜を行う第2工程と、
前記基板に対向するように配置されたスパッタリングターゲットを用い、前記基板を左右に傾動し、前記基板を静止させた非回転の状態を保ち、前記交換結合用非磁性層上に前記第二磁化固定層のスパッタ成膜を行う第3工程と、
を有することを特徴とするスピンバルブ型トンネル磁気抵抗素子の製造方法。
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US20110139606A1 (en) | 2011-06-16 |
TWI413992B (zh) | 2013-11-01 |
US8932438B2 (en) | 2015-01-13 |
JPWO2009154009A1 (ja) | 2011-11-24 |
GB2474167B (en) | 2015-07-29 |
TWI456607B (zh) | 2014-10-11 |
GB201100741D0 (en) | 2011-03-02 |
TW201407648A (zh) | 2014-02-16 |
WO2009154009A1 (ja) | 2009-12-23 |
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GB2474167A (en) | 2011-04-06 |
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