TWI387966B - 製造磁阻效應元件的方法 - Google Patents
製造磁阻效應元件的方法 Download PDFInfo
- Publication number
- TWI387966B TWI387966B TW096107307A TW96107307A TWI387966B TW I387966 B TWI387966 B TW I387966B TW 096107307 A TW096107307 A TW 096107307A TW 96107307 A TW96107307 A TW 96107307A TW I387966 B TWI387966 B TW I387966B
- Authority
- TW
- Taiwan
- Prior art keywords
- film forming
- layer
- mgo
- film
- substrate
- Prior art date
Links
- 230000000694 effects Effects 0.000 title claims description 217
- 238000004519 manufacturing process Methods 0.000 title claims description 95
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 246
- 239000000395 magnesium oxide Substances 0.000 claims description 246
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims description 246
- 239000000758 substrate Substances 0.000 claims description 198
- 238000000034 method Methods 0.000 claims description 131
- 230000008569 process Effects 0.000 claims description 110
- 239000000126 substance Substances 0.000 claims description 79
- 230000005294 ferromagnetic effect Effects 0.000 claims description 78
- 230000001590 oxidative effect Effects 0.000 claims description 75
- 238000005247 gettering Methods 0.000 claims description 46
- 238000004544 sputter deposition Methods 0.000 claims description 26
- 239000010936 titanium Substances 0.000 claims description 20
- 238000000576 coating method Methods 0.000 claims description 18
- 239000011248 coating agent Substances 0.000 claims description 17
- 229910052719 titanium Inorganic materials 0.000 claims description 11
- 239000012528 membrane Substances 0.000 claims description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 239000010408 film Substances 0.000 description 404
- 239000010410 layer Substances 0.000 description 319
- 230000007246 mechanism Effects 0.000 description 87
- 239000007789 gas Substances 0.000 description 79
- 239000012212 insulator Substances 0.000 description 32
- 239000011777 magnesium Substances 0.000 description 31
- 230000015572 biosynthetic process Effects 0.000 description 29
- 239000000463 material Substances 0.000 description 25
- 229910019236 CoFeB Inorganic materials 0.000 description 22
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 22
- 239000001301 oxygen Substances 0.000 description 22
- 229910052760 oxygen Inorganic materials 0.000 description 22
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 15
- 229910003321 CoFe Inorganic materials 0.000 description 14
- 229910019041 PtMn Inorganic materials 0.000 description 12
- 230000005291 magnetic effect Effects 0.000 description 12
- 239000011651 chromium Substances 0.000 description 10
- 239000010409 thin film Substances 0.000 description 10
- 229910052804 chromium Inorganic materials 0.000 description 9
- 238000000151 deposition Methods 0.000 description 9
- 229910052749 magnesium Inorganic materials 0.000 description 9
- 238000005192 partition Methods 0.000 description 9
- 230000005290 antiferromagnetic effect Effects 0.000 description 8
- 230000008021 deposition Effects 0.000 description 8
- 239000011572 manganese Substances 0.000 description 8
- 238000001179 sorption measurement Methods 0.000 description 8
- 229910052726 zirconium Inorganic materials 0.000 description 8
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 7
- 229910052732 germanium Inorganic materials 0.000 description 7
- 229910052748 manganese Inorganic materials 0.000 description 7
- 239000010935 stainless steel Substances 0.000 description 7
- 229910001220 stainless steel Inorganic materials 0.000 description 7
- 229910052715 tantalum Inorganic materials 0.000 description 7
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- 229910052796 boron Inorganic materials 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 229910052750 molybdenum Inorganic materials 0.000 description 6
- 230000002093 peripheral effect Effects 0.000 description 6
- 229910052721 tungsten Inorganic materials 0.000 description 6
- 229910052720 vanadium Inorganic materials 0.000 description 6
- 229910052735 hafnium Inorganic materials 0.000 description 5
- 230000005415 magnetization Effects 0.000 description 5
- 229910052758 niobium Inorganic materials 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- 238000009434 installation Methods 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 2
- 229910000420 cerium oxide Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 230000014759 maintenance of location Effects 0.000 description 2
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 2
- 238000000638 solvent extraction Methods 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- ZDZZPLGHBXACDA-UHFFFAOYSA-N [B].[Fe].[Co] Chemical compound [B].[Fe].[Co] ZDZZPLGHBXACDA-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000003064 anti-oxidating effect Effects 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 230000003078 antioxidant effect Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- FQMNUIZEFUVPNU-UHFFFAOYSA-N cobalt iron Chemical compound [Fe].[Co].[Co] FQMNUIZEFUVPNU-UHFFFAOYSA-N 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- WWFYEXUJLWHZEX-UHFFFAOYSA-N germanium manganese Chemical compound [Mn].[Ge] WWFYEXUJLWHZEX-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- IGOJMROYPFZEOR-UHFFFAOYSA-N manganese platinum Chemical compound [Mn].[Pt] IGOJMROYPFZEOR-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/081—Oxides of aluminium, magnesium or beryllium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/568—Transferring the substrates through a series of coating stations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32633—Baffles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3426—Material
- H01J37/3429—Plural materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3447—Collimators, shutters, apertures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Magnetic Heads (AREA)
- Hall/Mr Elements (AREA)
- Thin Magnetic Films (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Measuring Magnetic Variables (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006058748 | 2006-03-03 | ||
| JP2007034686A JP4782037B2 (ja) | 2006-03-03 | 2007-02-15 | 磁気抵抗効果素子の製造方法及び製造装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200802366A TW200802366A (en) | 2008-01-01 |
| TWI387966B true TWI387966B (zh) | 2013-03-01 |
Family
ID=38509308
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW096107307A TWI387966B (zh) | 2006-03-03 | 2007-03-03 | 製造磁阻效應元件的方法 |
Country Status (8)
| Country | Link |
|---|---|
| US (2) | US10629804B2 (enExample) |
| EP (2) | EP2037512A1 (enExample) |
| JP (1) | JP4782037B2 (enExample) |
| KR (1) | KR101053232B1 (enExample) |
| CN (1) | CN102867910B (enExample) |
| RU (1) | RU2008138423A (enExample) |
| TW (1) | TWI387966B (enExample) |
| WO (1) | WO2007105472A1 (enExample) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8679301B2 (en) * | 2007-08-01 | 2014-03-25 | HGST Netherlands B.V. | Repeatability for RF MgO TMR barrier layer process by implementing Ti pasting |
| JP5278876B2 (ja) * | 2007-10-31 | 2013-09-04 | 独立行政法人産業技術総合研究所 | マイクロ波発振素子および検出素子 |
| WO2009096033A1 (ja) * | 2008-02-01 | 2009-08-06 | Fujitsu Limited | トンネル磁気抵抗効果素子の製造方法 |
| WO2011093334A1 (ja) | 2010-01-26 | 2011-08-04 | キヤノンアネルバ株式会社 | 成膜方法、成膜装置、および該成膜装置の制御装置 |
| US8860159B2 (en) * | 2011-10-20 | 2014-10-14 | The United States Of America As Represented By The Secretary Of The Army | Spintronic electronic device and circuits |
| JP5998654B2 (ja) * | 2012-05-31 | 2016-09-28 | 東京エレクトロン株式会社 | 真空処理装置、真空処理方法及び記憶媒体 |
| KR20150006459A (ko) * | 2013-02-05 | 2015-01-16 | 캐논 아네르바 가부시키가이샤 | 성막 장치 |
| GB2561790B (en) * | 2016-02-01 | 2021-05-12 | Canon Anelva Corp | Manufacturing method of magneto-resistive effect device |
| JP7141989B2 (ja) * | 2018-09-28 | 2022-09-26 | 芝浦メカトロニクス株式会社 | 成膜装置 |
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| US3616403A (en) * | 1968-10-25 | 1971-10-26 | Ibm | Prevention of inversion of p-type semiconductor material during rf sputtering of quartz |
| US4782477A (en) * | 1985-09-30 | 1988-11-01 | Kabushiki Kaisha Toshiba | Optical recording medium with fluorine resin adhesive |
| JPH0250959A (ja) | 1988-08-10 | 1990-02-20 | Nok Corp | 希土類金属薄膜の製膜方法および製膜装置 |
| JPH0314227A (ja) | 1989-06-13 | 1991-01-22 | Sharp Corp | 半導体装置の製造方法 |
| JPH0397855A (ja) | 1989-09-07 | 1991-04-23 | Shimadzu Corp | スパッタリング装置 |
| JPH0499271A (ja) | 1990-08-10 | 1992-03-31 | Olympus Optical Co Ltd | 多層薄膜の作製方法およびその装置 |
| JP2857719B2 (ja) * | 1990-09-21 | 1999-02-17 | 工業技術院長 | トンネル障壁の堆積方法 |
| JPH04202768A (ja) * | 1990-11-30 | 1992-07-23 | Nippon Kentetsu Co Ltd | スパッタリング装置のターゲット汚染防止方法 |
| WO1992016671A1 (fr) * | 1991-03-20 | 1992-10-01 | Canon Kabushiki Kaisha | Procede et dispositif de formation d'une couche mince par pulverisation |
| US5367285A (en) * | 1993-02-26 | 1994-11-22 | Lake Shore Cryotronics, Inc. | Metal oxy-nitride resistance films and methods of making the same |
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| JP2871670B1 (ja) | 1997-03-26 | 1999-03-17 | 富士通株式会社 | 強磁性トンネル接合磁気センサ、その製造方法、磁気ヘッド、および磁気記録／再生装置 |
| JP4166302B2 (ja) | 1997-08-06 | 2008-10-15 | 凸版印刷株式会社 | カラーフィルタ及びその製造方法 |
| JPH11117064A (ja) | 1997-10-09 | 1999-04-27 | Anelva Corp | スパッタリング装置 |
| JPH11152564A (ja) | 1997-11-17 | 1999-06-08 | Murata Mfg Co Ltd | プリスパッタ方法および装置 |
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| KR100307074B1 (ko) * | 1999-09-08 | 2001-09-24 | 이종구 | 다원계 증착을 위한 표적표면 오염 방지용 나누개 및 기판 오염 방지용 가리개를 가진 증착조 |
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| KR100686494B1 (ko) | 2002-12-30 | 2007-02-23 | 엘지.필립스 엘시디 주식회사 | 금속막 증착을 위한 스퍼터와 스퍼터를 이용한 액정 표시장치의 제조법 |
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| JP2005298894A (ja) | 2004-04-12 | 2005-10-27 | Fujitsu Ltd | ターゲットのクリーニング方法及び物理的堆積装置 |
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| US7270896B2 (en) | 2004-07-02 | 2007-09-18 | International Business Machines Corporation | High performance magnetic tunnel barriers with amorphous materials |
| US20060042929A1 (en) | 2004-08-26 | 2006-03-02 | Daniele Mauri | Method for reactive sputter deposition of an ultra-thin metal oxide film |
| US20060042930A1 (en) * | 2004-08-26 | 2006-03-02 | Daniele Mauri | Method for reactive sputter deposition of a magnesium oxide (MgO) tunnel barrier in a magnetic tunnel junction |
| JP4292128B2 (ja) | 2004-09-07 | 2009-07-08 | キヤノンアネルバ株式会社 | 磁気抵抗効果素子の製造方法 |
| US7443639B2 (en) * | 2005-04-04 | 2008-10-28 | International Business Machines Corporation | Magnetic tunnel junctions including crystalline and amorphous tunnel barrier materials |
| US7430135B2 (en) * | 2005-12-23 | 2008-09-30 | Grandis Inc. | Current-switched spin-transfer magnetic devices with reduced spin-transfer switching current density |
-
2007
- 2007-02-15 JP JP2007034686A patent/JP4782037B2/ja active Active
- 2007-02-26 EP EP08168830A patent/EP2037512A1/en not_active Withdrawn
- 2007-02-26 US US12/224,646 patent/US10629804B2/en active Active
- 2007-02-26 WO PCT/JP2007/053487 patent/WO2007105472A1/ja not_active Ceased
- 2007-02-26 EP EP07714919.3A patent/EP2015377B1/en active Active
- 2007-02-26 CN CN201210345416.8A patent/CN102867910B/zh active Active
- 2007-02-26 KR KR1020087024222A patent/KR101053232B1/ko active Active
- 2007-02-26 RU RU2008138423/28A patent/RU2008138423A/ru unknown
- 2007-03-03 TW TW096107307A patent/TWI387966B/zh active
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2011
- 2011-07-06 US US13/177,237 patent/US8367156B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| TW200802366A (en) | 2008-01-01 |
| JP2007266584A (ja) | 2007-10-11 |
| EP2015377A1 (en) | 2009-01-14 |
| CN102867910B (zh) | 2016-05-04 |
| US20090148595A1 (en) | 2009-06-11 |
| US20110262634A1 (en) | 2011-10-27 |
| US8367156B2 (en) | 2013-02-05 |
| CN102867910A (zh) | 2013-01-09 |
| US10629804B2 (en) | 2020-04-21 |
| EP2015377A4 (en) | 2012-10-31 |
| EP2037512A1 (en) | 2009-03-18 |
| RU2008138423A (ru) | 2010-04-10 |
| KR101053232B1 (ko) | 2011-08-01 |
| JP4782037B2 (ja) | 2011-09-28 |
| EP2015377B1 (en) | 2014-11-19 |
| KR20080108269A (ko) | 2008-12-12 |
| WO2007105472A1 (ja) | 2007-09-20 |
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