RU2008138423A - Способ и устройство для изготовления магниторезистивного элемента - Google Patents
Способ и устройство для изготовления магниторезистивного элемента Download PDFInfo
- Publication number
- RU2008138423A RU2008138423A RU2008138423/28A RU2008138423A RU2008138423A RU 2008138423 A RU2008138423 A RU 2008138423A RU 2008138423/28 A RU2008138423/28 A RU 2008138423/28A RU 2008138423 A RU2008138423 A RU 2008138423A RU 2008138423 A RU2008138423 A RU 2008138423A
- Authority
- RU
- Russia
- Prior art keywords
- forming
- layer
- mgo
- film
- ferromagnetic layer
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract 14
- 230000005294 ferromagnetic effect Effects 0.000 claims abstract 53
- 239000000126 substance Substances 0.000 claims abstract 35
- 238000004519 manufacturing process Methods 0.000 claims abstract 21
- 238000010521 absorption reaction Methods 0.000 claims abstract 19
- 230000001590 oxidative effect Effects 0.000 claims abstract 19
- 230000015572 biosynthetic process Effects 0.000 claims abstract 4
- 239000000758 substrate Substances 0.000 claims 33
- 239000007789 gas Substances 0.000 claims 26
- 238000009826 distribution Methods 0.000 claims 5
- 238000000151 deposition Methods 0.000 claims 4
- 229910052782 aluminium Inorganic materials 0.000 claims 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 3
- 229910052796 boron Inorganic materials 0.000 claims 3
- 229910052804 chromium Inorganic materials 0.000 claims 3
- 230000008021 deposition Effects 0.000 claims 3
- 229910052732 germanium Inorganic materials 0.000 claims 3
- 229910052735 hafnium Inorganic materials 0.000 claims 3
- 229910052749 magnesium Inorganic materials 0.000 claims 3
- 229910052748 manganese Inorganic materials 0.000 claims 3
- 239000002184 metal Substances 0.000 claims 3
- 229910052751 metal Inorganic materials 0.000 claims 3
- 229910052750 molybdenum Inorganic materials 0.000 claims 3
- 229910052758 niobium Inorganic materials 0.000 claims 3
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims 3
- 239000001301 oxygen Substances 0.000 claims 3
- 229910052760 oxygen Inorganic materials 0.000 claims 3
- 239000004065 semiconductor Substances 0.000 claims 3
- 229910052710 silicon Inorganic materials 0.000 claims 3
- 238000001179 sorption measurement Methods 0.000 claims 3
- 229910052715 tantalum Inorganic materials 0.000 claims 3
- 229910052719 titanium Inorganic materials 0.000 claims 3
- 229910052721 tungsten Inorganic materials 0.000 claims 3
- 229910052720 vanadium Inorganic materials 0.000 claims 3
- 229910052726 zirconium Inorganic materials 0.000 claims 3
- 230000002093 peripheral effect Effects 0.000 claims 2
- 238000004544 sputter deposition Methods 0.000 claims 2
- 238000005507 spraying Methods 0.000 claims 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/081—Oxides of aluminium, magnesium or beryllium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/568—Transferring the substrates through a series of coating stations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32633—Baffles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3426—Material
- H01J37/3429—Plural materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3447—Collimators, shutters, apertures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/01—Manufacture or treatment
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Magnetic Heads (AREA)
- Hall/Mr Elements (AREA)
- Thin Magnetic Films (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Measuring Magnetic Variables (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006-058748 | 2006-03-03 | ||
| JP2006058748 | 2006-03-03 | ||
| JP2007-034686 | 2007-02-15 | ||
| JP2007034686A JP4782037B2 (ja) | 2006-03-03 | 2007-02-15 | 磁気抵抗効果素子の製造方法及び製造装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| RU2008138423A true RU2008138423A (ru) | 2010-04-10 |
Family
ID=38509308
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| RU2008138423/28A RU2008138423A (ru) | 2006-03-03 | 2007-02-26 | Способ и устройство для изготовления магниторезистивного элемента |
Country Status (8)
| Country | Link |
|---|---|
| US (2) | US10629804B2 (enExample) |
| EP (2) | EP2037512A1 (enExample) |
| JP (1) | JP4782037B2 (enExample) |
| KR (1) | KR101053232B1 (enExample) |
| CN (1) | CN102867910B (enExample) |
| RU (1) | RU2008138423A (enExample) |
| TW (1) | TWI387966B (enExample) |
| WO (1) | WO2007105472A1 (enExample) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8679301B2 (en) * | 2007-08-01 | 2014-03-25 | HGST Netherlands B.V. | Repeatability for RF MgO TMR barrier layer process by implementing Ti pasting |
| JP5278876B2 (ja) * | 2007-10-31 | 2013-09-04 | 独立行政法人産業技術総合研究所 | マイクロ波発振素子および検出素子 |
| WO2009096033A1 (ja) * | 2008-02-01 | 2009-08-06 | Fujitsu Limited | トンネル磁気抵抗効果素子の製造方法 |
| WO2011093334A1 (ja) | 2010-01-26 | 2011-08-04 | キヤノンアネルバ株式会社 | 成膜方法、成膜装置、および該成膜装置の制御装置 |
| US8860159B2 (en) * | 2011-10-20 | 2014-10-14 | The United States Of America As Represented By The Secretary Of The Army | Spintronic electronic device and circuits |
| JP5998654B2 (ja) * | 2012-05-31 | 2016-09-28 | 東京エレクトロン株式会社 | 真空処理装置、真空処理方法及び記憶媒体 |
| KR20150006459A (ko) * | 2013-02-05 | 2015-01-16 | 캐논 아네르바 가부시키가이샤 | 성막 장치 |
| GB2561790B (en) * | 2016-02-01 | 2021-05-12 | Canon Anelva Corp | Manufacturing method of magneto-resistive effect device |
| JP7141989B2 (ja) * | 2018-09-28 | 2022-09-26 | 芝浦メカトロニクス株式会社 | 成膜装置 |
Family Cites Families (42)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3616403A (en) * | 1968-10-25 | 1971-10-26 | Ibm | Prevention of inversion of p-type semiconductor material during rf sputtering of quartz |
| US4782477A (en) * | 1985-09-30 | 1988-11-01 | Kabushiki Kaisha Toshiba | Optical recording medium with fluorine resin adhesive |
| JPH0250959A (ja) | 1988-08-10 | 1990-02-20 | Nok Corp | 希土類金属薄膜の製膜方法および製膜装置 |
| JPH0314227A (ja) | 1989-06-13 | 1991-01-22 | Sharp Corp | 半導体装置の製造方法 |
| JPH0397855A (ja) | 1989-09-07 | 1991-04-23 | Shimadzu Corp | スパッタリング装置 |
| JPH0499271A (ja) | 1990-08-10 | 1992-03-31 | Olympus Optical Co Ltd | 多層薄膜の作製方法およびその装置 |
| JP2857719B2 (ja) * | 1990-09-21 | 1999-02-17 | 工業技術院長 | トンネル障壁の堆積方法 |
| JPH04202768A (ja) * | 1990-11-30 | 1992-07-23 | Nippon Kentetsu Co Ltd | スパッタリング装置のターゲット汚染防止方法 |
| WO1992016671A1 (fr) * | 1991-03-20 | 1992-10-01 | Canon Kabushiki Kaisha | Procede et dispositif de formation d'une couche mince par pulverisation |
| US5367285A (en) * | 1993-02-26 | 1994-11-22 | Lake Shore Cryotronics, Inc. | Metal oxy-nitride resistance films and methods of making the same |
| TW335504B (en) | 1996-07-09 | 1998-07-01 | Applied Materials Inc | A method for providing full-face high density plasma deposition |
| US5707498A (en) * | 1996-07-12 | 1998-01-13 | Applied Materials, Inc. | Avoiding contamination from induction coil in ionized sputtering |
| JP2871670B1 (ja) | 1997-03-26 | 1999-03-17 | 富士通株式会社 | 強磁性トンネル接合磁気センサ、その製造方法、磁気ヘッド、および磁気記録／再生装置 |
| JP4166302B2 (ja) | 1997-08-06 | 2008-10-15 | 凸版印刷株式会社 | カラーフィルタ及びその製造方法 |
| JPH11117064A (ja) | 1997-10-09 | 1999-04-27 | Anelva Corp | スパッタリング装置 |
| JPH11152564A (ja) | 1997-11-17 | 1999-06-08 | Murata Mfg Co Ltd | プリスパッタ方法および装置 |
| US6303218B1 (en) | 1998-03-20 | 2001-10-16 | Kabushiki Kaisha Toshiba | Multi-layered thin-film functional device and magnetoresistance effect element |
| JP4433528B2 (ja) | 1998-12-08 | 2010-03-17 | ソニー株式会社 | 固体撮像素子及びその製造方法 |
| KR100307074B1 (ko) * | 1999-09-08 | 2001-09-24 | 이종구 | 다원계 증착을 위한 표적표면 오염 방지용 나누개 및 기판 오염 방지용 가리개를 가진 증착조 |
| JP4526139B2 (ja) | 1999-10-13 | 2010-08-18 | キヤノンアネルバ株式会社 | 基板処理装置及びスパッタリング装置 |
| US6551471B1 (en) | 1999-11-30 | 2003-04-22 | Canon Kabushiki Kaisha | Ionization film-forming method and apparatus |
| JP2001176027A (ja) * | 1999-12-14 | 2001-06-29 | Nec Corp | 磁気抵抗効果ヘッド及びこれを用いた磁気記憶装置 |
| JP4364380B2 (ja) * | 1999-12-28 | 2009-11-18 | 株式会社半導体エネルギー研究所 | 薄膜作製装置及び薄膜作製方法 |
| JP2001295024A (ja) | 2000-04-14 | 2001-10-26 | Nikko Materials Co Ltd | 薄膜形成装置用部材及びその製造方法 |
| JP2002167661A (ja) * | 2000-11-30 | 2002-06-11 | Anelva Corp | 磁性多層膜作製装置 |
| US20030029715A1 (en) | 2001-07-25 | 2003-02-13 | Applied Materials, Inc. | An Apparatus For Annealing Substrates In Physical Vapor Deposition Systems |
| JP2003069011A (ja) | 2001-08-27 | 2003-03-07 | Hitachi Ltd | 半導体装置とその製造方法 |
| SG108872A1 (en) * | 2001-10-24 | 2005-02-28 | Toda Kogyo Corp | Perpendicular magnetic recording medium |
| US6923860B1 (en) * | 2002-03-28 | 2005-08-02 | Seagate Technology Llc | Oxidation of material for tunnel magneto-resistive sensors |
| US6828260B2 (en) * | 2002-10-29 | 2004-12-07 | Hewlett-Packard Development Company, L.P. | Ultra-violet treatment of a tunnel barrier layer through an overlayer a tunnel junction device |
| JP4447207B2 (ja) | 2002-11-07 | 2010-04-07 | 富士通マイクロエレクトロニクス株式会社 | 半導体製造装置及び半導体装置の製造方法 |
| KR100686494B1 (ko) | 2002-12-30 | 2007-02-23 | 엘지.필립스 엘시디 주식회사 | 금속막 증착을 위한 스퍼터와 스퍼터를 이용한 액정 표시장치의 제조법 |
| JP2004235223A (ja) | 2003-01-28 | 2004-08-19 | Anelva Corp | 磁性多層膜作製の装置および方法、膜作製の評価方法、膜作製の制御方法 |
| US7318236B2 (en) | 2003-02-27 | 2008-01-08 | Microsoft Corporation | Tying a digital license to a user and tying the user to multiple computing devices in a digital rights management (DRM) system |
| JP2005298894A (ja) | 2004-04-12 | 2005-10-27 | Fujitsu Ltd | ターゲットのクリーニング方法及び物理的堆積装置 |
| JP2005333106A (ja) | 2004-04-20 | 2005-12-02 | Ken Takahashi | 交換結合素子とその製造方法並びに交換結合素子を具備したデバイス |
| US7270896B2 (en) | 2004-07-02 | 2007-09-18 | International Business Machines Corporation | High performance magnetic tunnel barriers with amorphous materials |
| US20060042929A1 (en) | 2004-08-26 | 2006-03-02 | Daniele Mauri | Method for reactive sputter deposition of an ultra-thin metal oxide film |
| US20060042930A1 (en) * | 2004-08-26 | 2006-03-02 | Daniele Mauri | Method for reactive sputter deposition of a magnesium oxide (MgO) tunnel barrier in a magnetic tunnel junction |
| JP4292128B2 (ja) | 2004-09-07 | 2009-07-08 | キヤノンアネルバ株式会社 | 磁気抵抗効果素子の製造方法 |
| US7443639B2 (en) * | 2005-04-04 | 2008-10-28 | International Business Machines Corporation | Magnetic tunnel junctions including crystalline and amorphous tunnel barrier materials |
| US7430135B2 (en) * | 2005-12-23 | 2008-09-30 | Grandis Inc. | Current-switched spin-transfer magnetic devices with reduced spin-transfer switching current density |
-
2007
- 2007-02-15 JP JP2007034686A patent/JP4782037B2/ja active Active
- 2007-02-26 EP EP08168830A patent/EP2037512A1/en not_active Withdrawn
- 2007-02-26 US US12/224,646 patent/US10629804B2/en active Active
- 2007-02-26 WO PCT/JP2007/053487 patent/WO2007105472A1/ja not_active Ceased
- 2007-02-26 EP EP07714919.3A patent/EP2015377B1/en active Active
- 2007-02-26 CN CN201210345416.8A patent/CN102867910B/zh active Active
- 2007-02-26 KR KR1020087024222A patent/KR101053232B1/ko active Active
- 2007-02-26 RU RU2008138423/28A patent/RU2008138423A/ru unknown
- 2007-03-03 TW TW096107307A patent/TWI387966B/zh active
-
2011
- 2011-07-06 US US13/177,237 patent/US8367156B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| TW200802366A (en) | 2008-01-01 |
| JP2007266584A (ja) | 2007-10-11 |
| EP2015377A1 (en) | 2009-01-14 |
| CN102867910B (zh) | 2016-05-04 |
| US20090148595A1 (en) | 2009-06-11 |
| US20110262634A1 (en) | 2011-10-27 |
| US8367156B2 (en) | 2013-02-05 |
| CN102867910A (zh) | 2013-01-09 |
| US10629804B2 (en) | 2020-04-21 |
| EP2015377A4 (en) | 2012-10-31 |
| EP2037512A1 (en) | 2009-03-18 |
| KR101053232B1 (ko) | 2011-08-01 |
| JP4782037B2 (ja) | 2011-09-28 |
| EP2015377B1 (en) | 2014-11-19 |
| TWI387966B (zh) | 2013-03-01 |
| KR20080108269A (ko) | 2008-12-12 |
| WO2007105472A1 (ja) | 2007-09-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| RU2008138423A (ru) | Способ и устройство для изготовления магниторезистивного элемента | |
| CN110797545B (zh) | 一种金属双极板及其制备方法以及燃料电池 | |
| KR960026261A (ko) | 재 도입형 콘택 홀을 피복시키거나 또는 충진시키기 위한 방법 및 장치 | |
| TWI485776B (zh) | Nonvolatile memory element and manufacturing method thereof | |
| JP2005537638A5 (enExample) | ||
| JP2015519477A (ja) | 事前に安定させたプラズマによるプロセスのためのスパッタリング方法 | |
| JP2004260159A5 (enExample) | ||
| JP7507693B2 (ja) | 磁気トンネル接合構造及びその製造方法 | |
| JP2007284791A (ja) | プラズマ化学気相成長法に基づく多層薄膜構造の製造方法 | |
| JP2010242213A (ja) | スパッタリング方法及び成膜装置 | |
| AU2003226086A1 (en) | Methods and apparatus for deposition of thin films | |
| JP2020534692A5 (enExample) | ||
| JP2009529789A5 (enExample) | ||
| WO2014083218A1 (es) | Procedimiento para la preparación de una capa o multicapa barrera y/o dieléctrica sobre un sustrato y dispositivo para su realización | |
| CN107492490A (zh) | 半导体设备的成膜方法、氮化铝成膜方法以及电子装置 | |
| JP2007502917A5 (enExample) | ||
| JP2012512327A (ja) | 低いエネルギーを有している粒子によって絶縁層を形成する方法 | |
| TW200848536A (en) | Twin target sputter system for thin film passivation and method of forming film using the same | |
| US8119514B2 (en) | Cobalt-doped indium-tin oxide films and methods | |
| JP2004079528A5 (enExample) | ||
| TW525196B (en) | Method for producing a ferroelectric layer | |
| JP2021525005A (ja) | 結合層とピンニング層の格子整合を用いた磁気トンネル接合 | |
| TW200721353A (en) | Electrostatic chuck, thin film manufacturing apparatus having the same, thin film manufacturing method, and substrate surface treatment method | |
| JP5699516B2 (ja) | 電極に接する絶縁膜の製造方法及びその絶縁膜を含む半導体装置 | |
| CN104752634A (zh) | 交替结构薄膜封装层界面的处理方法 |