JP2009529789A5 - - Google Patents
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- Publication number
- JP2009529789A5 JP2009529789A5 JP2008558451A JP2008558451A JP2009529789A5 JP 2009529789 A5 JP2009529789 A5 JP 2009529789A5 JP 2008558451 A JP2008558451 A JP 2008558451A JP 2008558451 A JP2008558451 A JP 2008558451A JP 2009529789 A5 JP2009529789 A5 JP 2009529789A5
- Authority
- JP
- Japan
- Prior art keywords
- dielectric layer
- hafnium
- oxide
- group
- exposing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000000463 material Substances 0.000 claims 12
- 238000000034 method Methods 0.000 claims 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 4
- 229910052735 hafnium Inorganic materials 0.000 claims 4
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims 4
- 238000004544 sputter deposition Methods 0.000 claims 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims 2
- 229910052782 aluminium Inorganic materials 0.000 claims 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 2
- 229910052788 barium Inorganic materials 0.000 claims 2
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims 2
- 229910052746 lanthanum Inorganic materials 0.000 claims 2
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims 2
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 claims 2
- 229910052757 nitrogen Inorganic materials 0.000 claims 2
- 230000003647 oxidation Effects 0.000 claims 2
- 238000007254 oxidation reaction Methods 0.000 claims 2
- 230000001590 oxidative effect Effects 0.000 claims 2
- 229910052712 strontium Inorganic materials 0.000 claims 2
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 claims 2
- 239000010936 titanium Substances 0.000 claims 2
- 229910052719 titanium Inorganic materials 0.000 claims 2
- 229910052721 tungsten Inorganic materials 0.000 claims 2
- 239000010937 tungsten Substances 0.000 claims 2
- 229910052727 yttrium Inorganic materials 0.000 claims 2
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims 2
- 229910052726 zirconium Inorganic materials 0.000 claims 2
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 claims 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims 1
- 229910017052 cobalt Inorganic materials 0.000 claims 1
- 239000010941 cobalt Substances 0.000 claims 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims 1
- 238000000151 deposition Methods 0.000 claims 1
- 229910000449 hafnium oxide Inorganic materials 0.000 claims 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims 1
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 claims 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 1
- 229910052707 ruthenium Inorganic materials 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
- 235000012239 silicon dioxide Nutrition 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 claims 1
- HWEYZGSCHQNNEH-UHFFFAOYSA-N silicon tantalum Chemical compound [Si].[Ta] HWEYZGSCHQNNEH-UHFFFAOYSA-N 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
- 229910003468 tantalcarbide Inorganic materials 0.000 claims 1
- 229910052715 tantalum Inorganic materials 0.000 claims 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 1
- -1 tungsten nitride Chemical class 0.000 claims 1
- 229910001928 zirconium oxide Inorganic materials 0.000 claims 1
Applications Claiming Priority (9)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US78150806P | 2006-03-09 | 2006-03-09 | |
| US60/781,508 | 2006-03-09 | ||
| US11/614,022 | 2006-12-20 | ||
| US11/614,019 | 2006-12-20 | ||
| US11/614,019 US7678710B2 (en) | 2006-03-09 | 2006-12-20 | Method and apparatus for fabricating a high dielectric constant transistor gate using a low energy plasma system |
| US11/614,027 | 2006-12-20 | ||
| US11/614,027 US7837838B2 (en) | 2006-03-09 | 2006-12-20 | Method of fabricating a high dielectric constant transistor gate using a low energy plasma apparatus |
| US11/614,022 US20070209930A1 (en) | 2006-03-09 | 2006-12-20 | Apparatus for fabricating a high dielectric constant transistor gate using a low energy plasma system |
| PCT/US2007/062841 WO2007106660A2 (en) | 2006-03-09 | 2007-02-27 | Method and apparatus for fabricating a high dielectric constant transistor gate using a low energy plasma system |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009529789A JP2009529789A (ja) | 2009-08-20 |
| JP2009529789A5 true JP2009529789A5 (enExample) | 2011-08-18 |
| JP4931939B2 JP4931939B2 (ja) | 2012-05-16 |
Family
ID=46395383
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008558451A Active JP4931939B2 (ja) | 2006-03-09 | 2007-02-27 | 半導体デバイスを形成する方法 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP4931939B2 (enExample) |
| TW (1) | TWI423333B (enExample) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE112011104624B4 (de) | 2010-12-28 | 2019-01-24 | Canon Anelva Corporation | Verfahren zum Herstellen einer Halbleitervorrichtung |
| JP6644617B2 (ja) * | 2016-03-31 | 2020-02-12 | 住友理工株式会社 | マグネトロンスパッタ成膜装置 |
| TWI787702B (zh) * | 2016-10-03 | 2022-12-21 | 美商應用材料股份有限公司 | 使用pvd釕的方法與裝置 |
| US10927449B2 (en) * | 2017-01-25 | 2021-02-23 | Applied Materials, Inc. | Extension of PVD chamber with multiple reaction gases, high bias power, and high power impulse source for deposition, implantation, and treatment |
| US10714334B2 (en) * | 2017-11-28 | 2020-07-14 | Taiwan Semiconductor Manufacturing Co., Ltd. | Conductive feature formation and structure |
| US12249511B2 (en) | 2019-05-03 | 2025-03-11 | Applied Materials, Inc. | Treatments to improve device performance |
| US10872763B2 (en) * | 2019-05-03 | 2020-12-22 | Applied Materials, Inc. | Treatments to enhance material structures |
| JP7450026B2 (ja) * | 2019-10-04 | 2024-03-14 | アプライド マテリアルズ インコーポレイテッド | ゲートインターフェース工学のための新規方法 |
| TWI837538B (zh) * | 2020-11-06 | 2024-04-01 | 美商應用材料股份有限公司 | 增強材料結構的處理 |
| WO2022187299A1 (en) * | 2021-03-04 | 2022-09-09 | Applied Materials, Inc. | Treatments to improve device performance |
| JP7478776B2 (ja) * | 2021-07-07 | 2024-05-07 | アプライド マテリアルズ インコーポレイテッド | ゲートスタック形成のための統合湿式洗浄 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61137370A (ja) * | 1984-12-10 | 1986-06-25 | Toshiba Corp | Ｍｏｓ半導体装置の製造方法 |
| JPH11229132A (ja) * | 1998-02-19 | 1999-08-24 | Toshiba Corp | スパッタ成膜装置およびスパッタ成膜方法 |
| JP3533105B2 (ja) * | 1999-04-07 | 2004-05-31 | Ｎｅｃエレクトロニクス株式会社 | 半導体装置の製造方法と製造装置 |
| TW531803B (en) * | 2000-08-31 | 2003-05-11 | Agere Syst Guardian Corp | Electronic circuit structure with improved dielectric properties |
| JP3944367B2 (ja) * | 2001-02-06 | 2007-07-11 | 松下電器産業株式会社 | 絶縁膜の形成方法及び半導体装置の製造方法 |
| JP3746968B2 (ja) * | 2001-08-29 | 2006-02-22 | 東京エレクトロン株式会社 | 絶縁膜の形成方法および形成システム |
| JP3937892B2 (ja) * | 2002-04-01 | 2007-06-27 | 日本電気株式会社 | 薄膜形成方法および半導体装置の製造方法 |
| US6703277B1 (en) * | 2002-04-08 | 2004-03-09 | Advanced Micro Devices, Inc. | Reducing agent for high-K gate dielectric parasitic interfacial layer |
| SG143940A1 (en) * | 2003-12-19 | 2008-07-29 | Agency Science Tech & Res | Process for depositing composite coating on a surface |
| JP4224044B2 (ja) * | 2005-07-19 | 2009-02-12 | 株式会社東芝 | 半導体装置の製造方法 |
-
2007
- 2007-02-27 JP JP2008558451A patent/JP4931939B2/ja active Active
- 2007-03-06 TW TW096107652A patent/TWI423333B/zh active
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