JP4782037B2 - 磁気抵抗効果素子の製造方法及び製造装置 - Google Patents

磁気抵抗効果素子の製造方法及び製造装置 Download PDF

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Publication number
JP4782037B2
JP4782037B2 JP2007034686A JP2007034686A JP4782037B2 JP 4782037 B2 JP4782037 B2 JP 4782037B2 JP 2007034686 A JP2007034686 A JP 2007034686A JP 2007034686 A JP2007034686 A JP 2007034686A JP 4782037 B2 JP4782037 B2 JP 4782037B2
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film forming
layer
mgo
film
substrate
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Japanese (ja)
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JP2007266584A (ja
JP2007266584A5 (enExample
Inventor
佳紀 永峰
孝二 恒川
ジャヤプラウィラ ダビッド
大樹 前原
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Canon Anelva Corp
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Canon Anelva Corp
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Priority to JP2007034686A priority Critical patent/JP4782037B2/ja
Application filed by Canon Anelva Corp filed Critical Canon Anelva Corp
Priority to EP07714919.3A priority patent/EP2015377B1/en
Priority to US12/224,646 priority patent/US10629804B2/en
Priority to RU2008138423/28A priority patent/RU2008138423A/ru
Priority to CN2009101467886A priority patent/CN101615653B/zh
Priority to PCT/JP2007/053487 priority patent/WO2007105472A1/ja
Priority to KR1020087024222A priority patent/KR101053232B1/ko
Priority to CN201210345416.8A priority patent/CN102867910B/zh
Priority to EP08168830A priority patent/EP2037512A1/en
Priority to TW096107307A priority patent/TWI387966B/zh
Publication of JP2007266584A publication Critical patent/JP2007266584A/ja
Publication of JP2007266584A5 publication Critical patent/JP2007266584A5/ja
Priority to US13/177,237 priority patent/US8367156B2/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/081—Oxides of aluminium, magnesium or beryllium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/568—Transferring the substrates through a series of coating stations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32633—Baffles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material
    • H01J37/3429—Plural materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3447—Collimators, shutters, apertures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Magnetic Heads (AREA)
  • Hall/Mr Elements (AREA)
  • Thin Magnetic Films (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Measuring Magnetic Variables (AREA)
JP2007034686A 2006-03-03 2007-02-15 磁気抵抗効果素子の製造方法及び製造装置 Active JP4782037B2 (ja)

Priority Applications (11)

Application Number Priority Date Filing Date Title
JP2007034686A JP4782037B2 (ja) 2006-03-03 2007-02-15 磁気抵抗効果素子の製造方法及び製造装置
EP08168830A EP2037512A1 (en) 2006-03-03 2007-02-26 Method of manufacturing magneto-resistive device and apparatus for manufacturing the same
RU2008138423/28A RU2008138423A (ru) 2006-03-03 2007-02-26 Способ и устройство для изготовления магниторезистивного элемента
CN2009101467886A CN101615653B (zh) 2006-03-03 2007-02-26 磁阻效应元件的制造方法以及制造设备
PCT/JP2007/053487 WO2007105472A1 (ja) 2006-03-03 2007-02-26 磁気抵抗効果素子の製造方法及び製造装置
KR1020087024222A KR101053232B1 (ko) 2006-03-03 2007-02-26 자기저항효과 소자의 제조방법 및 제조장치
EP07714919.3A EP2015377B1 (en) 2006-03-03 2007-02-26 Method of manufacturing a magneto-resistive device
US12/224,646 US10629804B2 (en) 2006-03-03 2007-02-26 Method of manufacturing magnetoresistive device
CN201210345416.8A CN102867910B (zh) 2006-03-03 2007-02-26 磁阻效应元件的制造方法
TW096107307A TWI387966B (zh) 2006-03-03 2007-03-03 製造磁阻效應元件的方法
US13/177,237 US8367156B2 (en) 2006-03-03 2011-07-06 Method of manufacturing magnetoresistive device and apparatus for manufacturing the same

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2006058748 2006-03-03
JP2006058748 2006-03-03
JP2007034686A JP4782037B2 (ja) 2006-03-03 2007-02-15 磁気抵抗効果素子の製造方法及び製造装置

Related Child Applications (1)

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JP2008042175A Division JP4679595B2 (ja) 2006-03-03 2008-02-22 磁気抵抗効果素子の製造方法及び製造装置

Publications (3)

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JP2007266584A JP2007266584A (ja) 2007-10-11
JP2007266584A5 JP2007266584A5 (enExample) 2008-04-10
JP4782037B2 true JP4782037B2 (ja) 2011-09-28

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Country Status (8)

Country Link
US (2) US10629804B2 (enExample)
EP (2) EP2037512A1 (enExample)
JP (1) JP4782037B2 (enExample)
KR (1) KR101053232B1 (enExample)
CN (1) CN102867910B (enExample)
RU (1) RU2008138423A (enExample)
TW (1) TWI387966B (enExample)
WO (1) WO2007105472A1 (enExample)

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US8860159B2 (en) * 2011-10-20 2014-10-14 The United States Of America As Represented By The Secretary Of The Army Spintronic electronic device and circuits
JP5998654B2 (ja) * 2012-05-31 2016-09-28 東京エレクトロン株式会社 真空処理装置、真空処理方法及び記憶媒体
KR20150006459A (ko) * 2013-02-05 2015-01-16 캐논 아네르바 가부시키가이샤 성막 장치
GB2561790B (en) * 2016-02-01 2021-05-12 Canon Anelva Corp Manufacturing method of magneto-resistive effect device
JP7141989B2 (ja) * 2018-09-28 2022-09-26 芝浦メカトロニクス株式会社 成膜装置

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Also Published As

Publication number Publication date
TW200802366A (en) 2008-01-01
JP2007266584A (ja) 2007-10-11
EP2015377A1 (en) 2009-01-14
CN102867910B (zh) 2016-05-04
US20090148595A1 (en) 2009-06-11
US20110262634A1 (en) 2011-10-27
US8367156B2 (en) 2013-02-05
CN102867910A (zh) 2013-01-09
US10629804B2 (en) 2020-04-21
EP2015377A4 (en) 2012-10-31
EP2037512A1 (en) 2009-03-18
RU2008138423A (ru) 2010-04-10
KR101053232B1 (ko) 2011-08-01
EP2015377B1 (en) 2014-11-19
TWI387966B (zh) 2013-03-01
KR20080108269A (ko) 2008-12-12
WO2007105472A1 (ja) 2007-09-20

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