Classifications

• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10N50/00—Galvanomagnetic devices
  • H10N50/10—Magnetoresistive devices
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
  • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
  • C23C14/08—Oxides
  • C23C14/081—Oxides of aluminium, magnesium or beryllium
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
  • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
  • C23C14/14—Metallic material, boron or silicon
  • C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
  • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
  • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
  • C23C14/568—Transferring the substrates through a series of coating stations
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
  • H01J37/32—Gas-filled discharge tubes
  • H01J37/32431—Constructional details of the reactor
  • H01J37/32458—Vessel
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
  • H01J37/32—Gas-filled discharge tubes
  • H01J37/32431—Constructional details of the reactor
  • H01J37/32623—Mechanical discharge control means
  • H01J37/32633—Baffles
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
  • H01J37/32—Gas-filled discharge tubes
  • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
  • H01J37/32—Gas-filled discharge tubes
  • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
  • H01J37/3411—Constructional aspects of the reactor
  • H01J37/3414—Targets
  • H01J37/3426—Material
  • H01J37/3429—Plural materials
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
  • H01J37/32—Gas-filled discharge tubes
  • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
  • H01J37/3411—Constructional aspects of the reactor
  • H01J37/3447—Collimators, shutters, apertures
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10N50/00—Galvanomagnetic devices
  • H10N50/01—Manufacture or treatment

Definitions

• the present invention relates to a method and apparatus for manufacturing a magnetoresistive effect element used for a magnetic random access memory (MRAM), a sensor of a magnetic head, and the like.
• MRAM magnetic random access memory
• Magnetoresistive elements are used in sensors for magnetic random access memory (MRAM) and magnetic heads.
• the first ferromagnetic layer, the Z insulator layer, and the magnetoresistive effect element having the basic structure of the second ferromagnetic layer, the magnetic directions of the first ferromagnetic layer and the second ferromagnetic layer are parallel to each other.
• the electric resistance is low and the anti-parallel property is high, the direction of the magnetic layer of one ferromagnetic layer is fixed and the direction of the magnetic layer of the other ferromagnetic layer is fixed.
• the direction of the external magnetic field is detected as a change in electrical resistance.
• the MR ratio Magneticoresistan ce rasioo magnetoresistance ratio
• MgO the insulator layer of the magnetoresistive effect element
• Non-Patent Document 1 APPLIED PHYSICS LETTERS 86, 092502 (2005)
• Patent Document 1 Japanese Patent Application 2004- 259280
• An object of the present invention is to provide a method and an apparatus for manufacturing a magnetoresistive effect element having a high MR ratio even with a low RA.
• a method for manufacturing a magnetoresistive element of the present invention is the method for manufacturing a magnetoresistive element having an MgO layer between a first ferromagnetic layer and a second ferromagnetic layer.
• the step of forming the MgO layer and the step of forming the second ferromagnetic layer are in this order, and the step of forming the MgO layer has a getter effect on the acid gas than MgO. It is characterized in that it is performed in a film forming chamber having a constituent member having a large substance deposited on its surface.
• the getter effect for the acidic gas is provided more than the film forming means force of the substance larger than MgO.
• the deposition of a substance having a getter effect on the oxidizing gas larger than MgO on the constituent member is performed by one or more of the film forming means.
• a substance whose getter effect on the oxidizing gas in the method of manufacturing a magnetoresistive element according to the present invention is larger than MgO may be one or more forces of elements constituting the substance constituting the magnetoresistive element. It is characterized by.
• the method for manufacturing a magnetoresistive effect element according to the present invention is the same as the method for manufacturing a magnetoresistive effect element having an MgO layer between the first ferromagnetic layer and the second ferromagnetic layer.
• a step of forming a magnetic layer, a step of forming an MgO layer, and a step of forming a second ferromagnetic layer in this order, and the step of forming the MgO layer has a getter effect on an oxidizing gas. It is characterized in that it is carried out in a film forming chamber having a constituent member having a surface coated with a material larger than the material constituting the ferromagnetic layer of 1.
• the getter effect with respect to the oxidizing gas is larger than that of the material constituting the first ferromagnetic layer.
• One or more film forming means for the substance is provided, and the getter effect on the oxidizing gas is larger than that of the substance constituting the first ferromagnetic layer. It is characterized by being performed by.
• the material having a getter effect with respect to the oxidizing gas larger than the material constituting the first ferromagnetic layer constitutes the magnetoresistive effect element. It is also characterized by having one or more powers of the elements that make up the substance.
• the method of manufacturing a magnetoresistive effect element according to the present invention is the same as the method of manufacturing a magnetoresistive effect element having an MgO layer between the first ferromagnetic layer and the second ferromagnetic layer.
• a step of forming a magnetic layer, a step of forming an MgO layer, and a step of forming a second ferromagnetic layer in this order, and the step of forming the MgO layer comprises a substance constituting the magnetoresistive effect element Among them, the method is characterized in that it is carried out in a film forming chamber having a constituent member having a surface on which a substance having the greatest getter effect with respect to an acidic gas is deposited.
• the method for manufacturing a magnetoresistive effect element is the method for manufacturing a magnetoresistive effect element having an MgO layer between a first ferromagnetic layer and a second ferromagnetic layer. a step of forming a magnetic layer, a step of forming a step and the second ferromagnetic layer forming the MgO layer in this order, the step of forming the MgO layer, the oxygen gas adsorption energy value 1 45k C It is characterized in that it is carried out in a film forming chamber having a constituent member having a surface of alZmol or more deposited thereon.
• the method for manufacturing a magnetoresistive effect element according to the present invention is the same as the method for manufacturing a magnetoresistive effect element having an MgO layer between the first ferromagnetic layer and the second ferromagnetic layer.
• the step of forming the MgO layer includes Ta (tantalum), Ti (titanium), Mg (magnesium), Zr (zirconium), Nb (niobium), Mo (molybdenum), W (tungsten), Cr (chromium), Mn (manganese), Hf (hafnium), V (vanadium), B (boron), It is characterized in that it is carried out in a film forming chamber having a structural member having a metal or a semiconductor having one or more forces of Si (silicon), A1 (aluminum) or Ge (germanium) deposited on the surface.
• the step of forming the MgO layer in the method of manufacturing a magnetoresistive effect element according to the present invention is characterized in that the MgO layer is formed by a sputtering method.
• a plurality of film forming chambers including the first film forming chamber are connected to the transfer chamber via a valve, and the plurality of film forming chambers are connected without breaking a vacuum.
• a method of manufacturing a magnetoresistive effect element using an apparatus capable of transferring a substrate between the film formation chambers of A first step of depositing a substance having a getter effect on the oxygen-containing gas larger than MgO on the surface of the constituent member in the first film-forming chamber; and the first step, which is performed after the first step.
• a plurality of film forming chambers including the first film forming chamber are connected to the transfer chamber via a valve, and the plurality of film forming chambers without breaking the vacuum are connected.
• a first step of depositing, a third step performed after the first step and depositing an MgO layer on the substrate in the first deposition chamber, and the first deposition chamber A second step of performing from the next step of the first step to the step before the third step in the film forming chamber other than the first step, the first step,
• the second step and the third step are sequentially performed in this order.
• a plurality of film forming chambers including the first film forming chamber are connected to the transfer chamber via a valve, and the plurality of film forming chambers are not broken.
• a magnetoresistive element manufacturing method using an apparatus capable of transferring a substrate between film forming chambers of Ta, Ti, Mg, Zr, Nb, Mo, W, Cr, Mn, Hf, V, B A first step of depositing a metal or semiconductor composed of one or more of Si, Al, or Ge on the surface of a component in the first film formation chamber, and the first step is performed after the first step.
• the first step of the method of manufacturing a magnetoresistive effect element according to the present invention has a large getter effect with respect to the acidic gas, and a substance on the surface of the constituent member in the first film forming chamber. At the same time, the film is formed on the substrate.
• the first step of the method of manufacturing a magnetoresistive effect element according to the present invention includes the first step. It is performed in parallel with the step of forming a film on the substrate in the film forming chamber other than the film forming chamber.
• the third step of the method of manufacturing a magnetoresistive effect element according to the present invention is characterized in that the Mg 2 O layer is formed by sputtering.
• a plurality of film forming chambers including the first film forming chamber are connected to the transfer chamber via a valve, and the plurality of film forming chambers are connected without breaking a vacuum.
• the substrate is transferred to the first film forming chamber, and Mg is sputtered in the first film forming chamber to form an Mg layer on the substrate.
• the magnetoresistive effect element manufacturing apparatus is configured such that a material having a getter effect with respect to an oxidizing gas larger than MgO is formed in the film forming chamber in which the MgO layer is formed. It is characterized in that a means for attaching is provided.
• the magnetoresistive element manufacturing apparatus is a magnetoresistive element manufacturing apparatus having an MgO layer between a first ferromagnetic layer and a second ferromagnetic layer.
• the film forming chamber for forming a film is provided with means for depositing a material having a getter effect larger than that for forming the first ferromagnetic layer on the surface of the constituent member in the film forming chamber with respect to the oxidizing gas.
• the substance having a large getter effect with respect to the acidic gas is an acidic gas among the substances constituting the magnetoresistive element. It is a substance that has the largest getter effect on.
• the magnetoresistive effect element manufacturing apparatus provides a material having an oxygen gas adsorption energy value of 145 kcalZmol or more in the film forming chamber for forming the MgO layer. It is characterized in that a means for attaching is provided.
• the magnetoresistive element manufacturing apparatus includes Ta Ti Mg Zr Nb Mo W Cr Mn Hf VB Si A1 or more than one force of Ge or Ge in the film forming chamber for forming the MgO layer.
• Means for depositing the metal or semiconductor to be deposited on the surface of the constituent member in the film forming chamber is provided.
• a plurality of film forming chambers including the film forming chamber for forming the MgO layer are connected to the transfer chamber via a valve, and a vacuum is applied. The substrate can be transferred between the plurality of film formation chambers without breaking.
• the magnetoresistive element manufacturing apparatus is characterized in that a MgO target is provided in a film forming chamber for forming the MgO layer, and a power supply unit for supplying power to the target is provided.
• the method for manufacturing a magnetoresistive effect element according to the present invention is the same as the method for manufacturing a magnetoresistive effect element having an MgO layer between the first ferromagnetic layer and the second ferromagnetic layer.
• the method of manufacturing a magnetoresistive effect element includes a substrate, a first ferromagnetic layer, a second ferromagnetic layer, the first ferromagnetic layer, and the second ferromagnetic layer.
• a step of forming a first ferromagnetic layer on the substrate a step of forming an MgO layer, and a second ferromagnetic layer
• the step of forming the MgO layer is performed by placing the substrate on a substrate mounting table whose portion in contact with the substrate is an insulator.
• the substrate is mounted on a substrate mounting table on which an insulator is sprayed.
• the method of manufacturing a magnetoresistive effect element according to the present invention is characterized in that the substrate is mounted on a substrate mounting table made of an insulator.
• the step of forming the MgO layer is performed in a state in which a mask is disposed at a peripheral portion of the substrate apart from the substrate. It is characterized by that.
• the method for manufacturing a magnetoresistive effect element according to the present invention is the same as the method for manufacturing a magnetoresistive effect element having an MgO layer between the first ferromagnetic layer and the second ferromagnetic layer.
• the step of forming the MgO layer includes a substrate and a substrate holding portion that holds the substrate. Electric It is performed in a state of being electrically insulated.
• a mask electrically insulated from the substrate is disposed in the periphery of the substrate. It is performed by.
• the magnetoresistive element manufacturing apparatus is a magnetoresistive element manufacturing apparatus having an MgO layer between a first ferromagnetic layer and a second ferromagnetic layer.
• the film formation chamber for film formation is provided with means for bringing the substrate into a floating potential.
• the magnetoresistive element manufacturing apparatus is an magnetoresistive element manufacturing apparatus having an MgO layer between a first ferromagnetic layer and a second ferromagnetic layer.
• the film forming chamber for film formation is provided with means for electrically insulating the substrate and the substrate holding portion for holding the substrate.
• the surface of the constituent member in the film forming chamber in which the MgO layer is formed is protected against oxygen, water, and the like (hereinafter referred to as "oxidizing gas").
• oxidizing gas oxygen, water, and the like
• An MgO layer was deposited on the substrate with a material with a large getter effect applied.
• a magnetoresistive element having a high MR ratio can be obtained even when the MgO film is thin, and as a result, a magnetoresistive element having a high MR ratio can be obtained even at a low RA.
• Deposition means power during the MgO layer deposition
• Oxygen gas such as oxygen and water released is taken in and removed by a substance having a larger getter effect than the oxygen and water such as oxygen gas. It is considered that an MgO layer can be formed in a state where the gas remains little in the film forming chamber.
• the getter effect is great for the oxygen and water such as oxygen and water deposited in the MgO deposition chamber!
• a means for depositing a substance having a large getter effect on an acidic gas such as oxygen or water and a means for forming a thin film layer can be used on the surfaces of the constituent members in the MgO film forming chamber. There is no need to provide a dedicated means for depositing a substance having a large getter effect on such an acidic gas.
• the process of depositing a substance having a large getter effect on an acidic gas such as oxygen or water and the process of forming a thin film layer are simultaneously achieved on the surface of a component in the MgO film forming chamber. As a result, the process can be shortened.
• the step of forming the MgO insulator layer is important among the thin film layers constituting the magnetoresistive effect element, and the surface of the component member in the deposition chamber for forming the MgO insulator layer It has been found that the characteristics of the magnetoresistive element are greatly influenced by the type of material deposited on the substrate.
• the substrate is at a floating potential, or the substrate and the substrate holding portion that holds the substrate are electrically insulated.
• the MgO layer By forming the MgO layer, a high MR ratio magnetoresistive element can be obtained even when the MgO film is thin. As a result, a high MR ratio magnetoresistive element can be obtained even at low RA. I was able to get it.
• FIG. 1 is a diagram showing an example of a thin film configuration of a magnetoresistive element having an MgO insulator layer manufactured in the first embodiment.
• Lower electrode layer 9 (thickness 10 nm) with Ta (tantalum) force, antiferromagnetic layer 8 (thickness 15 nm) made of PtMn (platinum manganese), CoFe (cobalt iron) layer 6 (thickness 2.5 nm), Ru (Ruthenium) layer 5 (thickness 0.85 nm), first ferromagnetic layer 2 (thickness 3 nm) that also has CoFeB (cobalt iron boron) force, insulator layer 4 (thickness 1) made of MgO (magnesium oxide) Onm), CoFeB second ferromagnetic layer 3 (film thickness 3 nm), Ta force upper electrode layer 10 (film thickness 10 nm), and Ru layer 11 (film thickness 7 nm) to prevent oxidation Has been.
• antiferromagnetic layer 8 (thickness 15 nm) made of PtMn (platinum manganese) made of PtMn (platinum manganese), CoFe (
• FIG. 2 is a schematic plan view showing an example of the configuration of the film forming chamber of the manufacturing apparatus according to the first embodiment of the present invention, which can be evacuated to a transfer chamber 43, a load lock chamber 44, and an unload lock, respectively.
• a film chamber 41 and a third film formation chamber 42 are provided.
• a load lock chamber 44 and an unload lock chamber 45 are connected to the transfer chamber 43 through valves, so that the substrate can be taken in and out between the external space at atmospheric pressure and the inside of the vacuum apparatus.
• the first film forming chamber 21, the second film forming chamber 41, and the third film forming chamber 42 are connected to the transfer chamber 43 through valves. As a result, the film formation chambers can be transferred to each other while maintaining the vacuum state.
• Each film forming chamber is provided with a film forming means for forming each layer of the magnetoresistive effect element. That is, the first film forming chamber 21 is provided with the first Ta film forming means 46 and the MgO film forming means 47, and the second film forming chamber 41 is provided with the PtMn film forming means 48 and the CoFe film forming means. A stage 49 and a second Ta film forming means 50 are provided, and a Ru film forming means 51 and a CoFeB film forming means 52 are provided in the third film forming chamber 42. The substrate is transferred between the respective film forming chambers without being exposed to the atmosphere, and is sequentially formed by film forming means for forming the respective layers of the magnetoresistive effect element.
• FIG. 3 is a cross-sectional view for explaining the internal configuration of the first film formation chamber of the manufacturing apparatus shown in FIG.
• the internal structures of the second film formation chamber and the third film formation chamber are the same as those of the first film formation chamber except that different materials are formed on the respective films.
• a sputtering method was employed as the film forming means in this example.
• the first film forming chamber 21 is connected to the transfer chamber through a valve 34, and the inside of the first film forming chamber 21 is kept airtight by closing the nozzle 34.
• a substrate holder 29 that holds the substrate 30 is provided below the first film formation chamber 21.
• the surface of the substrate holder 29 is covered with an insulator made of aluminum nitride.
• Each film forming means mainly includes a target of a film forming substance and a power supply unit to the target.
• a target 24 having MgO force is attached to the target attaching portion 23.
• a target 26 which is partitioned by the partition plate 22 and has Ta force is attached to the target mounting portion 25.
• the target 24 (MgO) and the target 26 (Ta) are supplied with high-frequency power from a high-frequency power source (not shown) via the target mounting portions 23 and 25.
• a shatter 27 that shields the target 24 (MgO) and a shutter 28 that shields the target 26 (Ta) are provided, and the substrate 12 is shielded by the shatter 31.
• Each shirt 27, 28, 31 supports sputtering of target 24 (MgO) or target 26 (Ta). Accordingly, the illustrated positional force can also be individually retracted.
• the first deposition chamber 21 is provided with a cylindrical deposition shield 36 so as to cover the side surface of the inner wall 37 of the deposition chamber.
• the film forming chamber inner wall, the deposition shield, the shirter, the partition plate, and the like are hereinafter referred to as constituent members.
• a vacuum exhaust means 35 for evacuating the inside of the film formation chamber 21 is provided below the first film formation chamber 21.
• a Si (silicon) substrate 12 having SiO (silicon dioxide) formed on the surface is a lower electrode made of Ta.
• the electrode layer 9 it is carried into the first film forming chamber 21 and held in the holding unit 29.
• the surface of the holding part 29 is covered with an insulating material having an aluminum nitride force, and the substrate 12 is held in an electrically floating state.
• the first film formation chamber 21 before film formation is evacuated to a knock ground pressure of 10 _7 Pa or less, Ar (argon) is introduced into the first film formation chamber 21 to a predetermined pressure, 28 and Shatter 31 are closed, high frequency power is applied to Ta target 26, and Ta pre-sputtering is performed.
• a Ta film is formed on the substrate 12 by opening the shirter 31 and the shirter 28 and applying high frequency power to the Ta target 26.
• the film forming chamber wall 37, the inner wall of the deposition shield 36, a part of the partition plate 22 and the shatter, which are constituent members inside the first film forming chamber 21, were sputtered by Ta target 26 force.
• Ta is deposited.
• the region where the sputtered particles from the Ta target are deposited varies depending on the position and shape of the target, the position and shape of the constituent members in the film forming chamber, film forming conditions, and the like.
• the shirt 31 is closed and the high-frequency power applied to the Ta target 26 is turned off.
• the substrate 12 on which the Ta lower electrode layer 9 has been formed is unloaded from the first film formation chamber 21 and placed in the second film formation chamber 41 in which the PtMn film formation means 48 and the CoFe film formation means 49 are provided. It is transferred and held in the holding part.
• the PtMn film forming means 48 is used to form the PtMn layer 8 on the substrate, and then the CoFe film forming means 49 is used to form the CoFe layer 6.
• the substrate 12 is unloaded from the second film forming chamber 41, transferred to the third film forming chamber 42 provided with the Ru film forming means 51 and the CoFeB film forming means 52, and held by the holding unit.
• the Ru layer 5 is formed on the substrate using the Ru film forming means 51, and then the first ferromagnetic layer 2 having the CoFeB force is also used using the CoFeB film forming means 52. Is formed. In this way, the PtMn antiferromagnetic layer 8, the CoFe ferromagnetic layer 6, the Ru layer 5, and the CoFeB ferromagnetic layer 2 shown in FIG. 1 are sequentially formed.
• the background pressure in each deposition chamber before deposition is 10 _7 Pa or less.
• the substrate 12 on which the layers up to the first ferromagnetic layer 2 in FIG. 1 are stacked is then transported again into the first film formation chamber 21 to form the MgO layer 4, and the substrate holder 29 Retained.
• the surface of the constituent member in the first film forming chamber 21 is in a state where Ta sputtered in the process of forming the Ta layer on the substrate is deposited on the outermost surface.
• an MgO layer is sputtered on the substrate 12 by the MgO film forming means 47.
• Pre-sputtering of MgO is performed by closing the shirt 28, the shirt 27 and the shirt 31 and applying high-frequency power to the MgO target 24.
• the shirt 27 is opened and MgO is sputtered for a predetermined time.
• the shirter 31 is opened, and the MgO layer 4 is formed on the substrate 12.
• the substrate 12 is unloaded from the first film formation chamber 21, moves to the third film formation chamber 42 provided with the CoFeB film formation means 52, and the second ferromagnetic layer 3 having the CoFeB force is formed. .
• the substrate 12 is loaded again into the first film forming chamber 21 where the first Ta film forming means 46 is disposed, and the Ta upper electrode layer 10 is formed.
• it moves to the third film formation chamber 42 provided with the Ru film formation means 51, and the Ru oxidation prevention layer 11 is formed.
• the magnetoresistive element shown in Fig. 1 formed in this way was able to obtain good characteristics with a high MR ratio even when the MgO layer was thin. As a result, a magnetoresistive element with a high MR ratio was obtained even with low RA.
• the film forming means for the material (Ta in this embodiment) has the largest getter effect with respect to the oxidizing gas. Is provided in the first film formation chamber where the MgO film formation means is provided, and in the first film formation chamber where the MgO film is formed, the material constituting the magnetoresistive element against the acidic gas Only the material having the largest getter effect (Ta in this embodiment) and the MgO film are formed.
• the getter effect on the oxidizing gas of Ta deposited on the surface of the components in the deposition chamber that forms the MgO layer is the same as the oxidizing gas of MgO and the CoFeB that forms the first ferromagnetic layer. Greater than getter effect for.
• FIG. 4 is a diagram comparing the film thickness / MR ratio characteristics of the MgO layer of the magnetoresistive effect element between the manufacturing method of the present invention and the conventional manufacturing method
• FIG. 5 shows the MgO of the magnetoresistive effect element.
• Layer R It is the figure which compared the A'MR ratio characteristic with the manufacturing method by this invention, and the conventional manufacturing method.
• the Ta lower electrode layer and the Ta upper electrode layer are formed using the second Ta film forming means 50 provided in the second film forming chamber 41.
• the MgO layer is formed in the film forming chamber in which MgO is deposited on the surface of the constituent member in the first film forming chamber in which the MgO layer is formed.
• Fig. 4 the MgO film thickness' MR ratio characteristics of the magnetoresistive effect element manufactured by the manufacturing method of the present invention in which an MgO layer is formed in a film deposition chamber coated with Ta are shown by squares (mouths).
• the MR ratio characteristic of the MgO film thickness of the magnetoresistive effect element manufactured by the conventional manufacturing method in which the MgO layer is formed without depositing the Ta is indicated by a black diamond ( ⁇ ).
• ⁇ black diamond
• the MR ratio decreases as the MgO layer thickness decreases. According to the manufacturing method of the present invention, even if the MgO layer thickness is reduced to 0.9 nm, the MR ratio is high. Ratio magnetoresistive element can be obtained.
• the RA'MR ratio characteristics of the magnetoresistive effect element manufactured by the manufacturing method of the present invention are shown by squares (mouths), and the RA-MR of the magnetoresistive effect element manufactured by the conventional manufacturing method is shown. Specific characteristics are indicated by black diamonds ( ⁇ ).
• the MR ratio when RA is about 150 ⁇ ⁇ m 2 is less than 50%, but according to the manufacturing method of the present invention, the MR ratio when RA is about 2 ⁇ / zm 2 is It reached about 130%, and a low MR and high MR ratio magnetoresistive element could be obtained.
• the surface of the constituent member in the film forming chamber when forming the MgO film is covered with Ta, which has a large getter effect with respect to the acidic gas. Since it has a getter effect on the acidic gas released during film formation, it is considered that deterioration of the quality of the MgO layer 4 formed on the surface of the ferromagnetic layer 2 was prevented.
• each thin film layer of the magnetoresistive element was formed in a deposition chamber evacuated to a knock ground pressure of 10 -7 Pa or less. Without covering the surface of the components in the MgO film formation chamber with the oxidizing gas, which has a large getter effect, and Ta, the MgO insulator layer is formed at a knock ground pressure of 10 _7 Pa. Even when the magnetoresistive effect element was formed, the MR ratio decline when the MgO film was thin was not improved.
• MgO is a deliquescent material that easily adsorbs water, and the sintered body of MgO is a porous material, the MgO target has an acidic gas such as oxygen or water. It is thought that the gas is adsorbed. Even if the knock ground pressure is exhausted to 10 _7 Pa, the acidic gas adsorbed on the target is not easily exhausted, and the acidic gas from the MgO target struck by ions at the same time as MgO sputtering starts.
• Substances with a large getter effect for oxygen and water such as oxygen and water are not limited to Ta. Ti, Mg, Zr, Nb, Mo, W, Cr, Mn, Hf, V B, Si, Al or Ge may be used. In addition, it can be made of two or more alloys that have a large getter effect with respect to acidic gas.
• the lower electrode layer 9 and the upper electrode layer 10 constituting the magnetoresistive effect element as a substance having a large getter effect with respect to the acidic gas deposited in the MgO film forming chamber. Since the same material (Ta) was adopted, the process of depositing the material (Ta) in the MgO film formation chamber is large for the oxygen-containing gas! / Ta lower electrode layer 9 and Ta upper electrode This can be achieved at the same time by carrying out the film-forming process of layer 10, and it is not necessary to provide a process for that purpose.
• Ta in both the lower electrode layer 9 and the upper electrode layer 10 constituting the magnetoresistive effect element is formed in the first film formation chamber 21 in which MgO is formed. Therefore, Ta can be applied to a relatively thick and wide area in the MgO deposition chamber, and a large getter effect can be obtained.
• a step of depositing Ta on the surface of the constituent member in the first film forming chamber 21 can be inserted immediately before the MgO layer 4 is formed.
• Ta is further added. Since it can be deposited, the thickness of Ta to be deposited on the surface of the component in the film forming chamber 21 and the area to which Ta is deposited can be increased.
• Ta can be deposited in the deposition chamber immediately before the step of forming the MgO layer, a high getter effect can be obtained with respect to the acidic gas released during the deposition of the MgO film. It is thought that.
• the shirter 31 is closed and Ta is sputtered to cover the surface of the components in the film formation chamber 21 with Ta. You may make it perform the process to make it wear. In this way, the thickness of Ta deposited on the surface of the component in the deposition chamber 21 can be increased and the deposition area can be increased, so that the acidity released during the deposition of the MgO film is increased. The getter effect on the gas can be increased. However, since this process is performed in parallel with the film forming process of the substrate, there is an advantage that the process time is not increased. Further, the sputtering process for depositing Ta on the surface of the constituent members in the film forming chamber 21 can be performed by placing a dummy substrate on the substrate holding portion instead of the operation of closing the shirter 31.
• FIG. 6 is a diagram showing an example of a thin film configuration of a magnetoresistive element having an MgO insulator layer in the second example of the present invention.
• a lower electrode portion 64 is formed in FIG.
• the lower electrode portion 64 includes a first Ta layer 61a, a CuN layer 62, and a second Ta layer 6 lb.
• the thin film configuration of the other part of the magnetoresistive effect element is the same as that in FIG. 1 of the first embodiment.
• FIG. 7 is a schematic diagram of a manufacturing apparatus used in the second embodiment of the present invention.
• a CuN film forming means 65 is newly provided in the first film forming chamber. That is, as a feature of the manufacturing apparatus of the second embodiment, the first film formation chamber having the film formation means for forming MgO has a film formation means (Ta) for a substance having a large getter effect with respect to the oxidizing gas. In addition, it has a small getter effect for the acidic gas and a film deposition means (Cu N).
• Ta film formation means
• Cu N film deposition means
• the Si substrate 12 on which the SiO film is formed has the first Ta layer 61a (see FIG. 6) of the lower electrode portion 64.
• the film is formed in the first film forming chamber 21 in which the first Ta film forming means 46 is provided.
• Ta is deposited on a part of the surface of the film forming chamber wall 37, the deposition shield 36, the partition plate 22 and the shatter, which are constituent members in the first film forming chamber 21.
• the CuN layer 62 (see FIG. 6) of the lower electrode part 64 is formed using the CuN film forming means 62 provided in the first film forming chamber 21.
• sputtered CuN is deposited in the first film forming chamber 21.
• the second Ta layer 61b see FIG.
• the first Ta film forming means 46 provided in the first film forming chamber 21 is used to form the substrate 12.
• Ta film is deposited on top.
• Ta which is a substance having a large getter effect with respect to the acidic gas, is deposited on the outermost surface of the constituent member in the first film forming chamber 21.
• the substrate 12 on which the Ta lower electrode portion 64 is formed is carried out of the first film formation chamber 21 in the same manner as in the first embodiment, and the second film formation means of PtMn and CoFe is provided.
• the first ferromagnetic layer 2 made of is sequentially deposited. Note that the background pressure in each film formation chamber before film formation is 10 _7 Pa or less.
• the substrate 12 is carried into the first film formation chamber 21, and an MgO film is deposited by the MgO film formation means 47.
• the MgO layer 4 is formed, the inside of the first film formation chamber 21 is in a state where Ta having a large getter effect with respect to the acidic gas is deposited on the surface.
• the substrate 12 formed up to the MgO layer 4 moves to the third film forming chamber 42 provided with the CoFeB film forming means, and the second ferromagnetic layer 3 having the CoFeB force is formed.
• the film is transferred again to the first film forming chamber 21, and Ta is formed on the substrate by the first Ta film forming means.
• the substrate moves to the third film forming chamber 42, and the Ru layer 11 is formed by the Ru film forming means 51, so that the magnetoresistive effect element having the thin film configuration shown in FIG. 6 is formed.
• the oxidizing property there is a film forming means for the substance (Ta in this example) that has the largest getter effect with respect to the gas and a film forming means for the substance (CuN in this example) that has a smaller getter effect than the acidic gas. ing.
• the magnetoresistive effect element shown in FIG. 6 formed in this way was able to obtain good characteristics with a high MR ratio even when the MgO layer was thin. As a result, even with low RA, high MR ratio magnetism A gas resistance effect element could be obtained.
• the substrate transfer can be simplified and the process time can be shortened. It was.
• a film forming means for a substance having a small getter effect with respect to the acidic gas is formed in the first film forming chamber in which the MgO layer is formed, and the surface of the constituent member in the film forming chamber. It has a means for depositing a substance with a large getter effect on the oxidizing gas, and after depositing a substance with a small getter effect on the oxidizing gas, it is formed immediately before forming the MgO layer. Before the MgO film is formed, the acidic gas is applied to the surface of the structural member in the film forming chamber so that the surface of the structural member in the film chamber has a large gettering effect on the surface of the acidic gas. On the other hand, it has a step of depositing a material having a large getter effect (Ta in this embodiment).
• an MgO film forming means, a Ta film forming means, and a CuN film forming means are provided in the film forming chamber for forming the MgO layer.
• Ta has the largest getter effect for the acidic gas.
• the getter effect on the oxidizing gas of Ta deposited on the surface of the component in the film forming chamber that forms the MgO layer is in contrast to the oxidizing gas of CoFeB that forms MgO and the first ferromagnetic layer. Greater than the getter effect.
• FIG. 8 is a diagram showing an example of a thin film configuration of a magnetoresistive effect element having an MgO insulator layer in a third example of the present invention.
• the third embodiment as shown in FIG. 8, in the thin film configuration of the magnetoresistive effect element in FIG.
• FIG. 9 is a schematic diagram of a manufacturing apparatus used in the third embodiment.
• the manufacturing apparatus used in the third embodiment of FIG. 9 is the same as the manufacturing apparatus used in the first embodiment, except that a Mg film forming means 67 is newly provided in the first film forming chamber.
• the Si substrate 12 on which SiO was formed on the surface was carried into the first film formation chamber 21, and Ta was deposited on the substrate 12 from Ta.
• a lower electrode layer 9 is formed.
• Ta sputtered from the Ta target 26 is deposited on the inside of the first deposition chamber 21 such as the deposition chamber wall 37, the deposition shield 36, the partition plate 22, and the shirter. Is done.
• the substrate 12 sequentially moves to the second film forming chamber 41 provided with the PtMn and CoFe film forming means, and the third film forming chamber 42 provided with the Ru and CoFeB film forming means. Then, the PtMn antiferromagnetic layer 8, the CoFe layer 6, the Ru layer 5, and the first ferromagnetic layer 2 made of CoFeB shown in FIG. 9 are sequentially formed.
• Each thin film layer was formed by evacuating the background pressure in each film formation chamber to 10 -7 Pa or less.
• the substrate 12 on which the ferromagnetic layers 2 are sequentially stacked is again carried into the first film forming chamber 21, and the Mg layer 66 is formed by sputtering the Mg target of the Mg film forming means 67. .
• Mg sputtered from the Mg target is deposited on a part of the film forming chamber wall 37, the deposition shield 36, the partition plate 22, the shirter, and the like inside the first film forming chamber 21.
• Mg is a substance having a large getter effect on an oxygen-containing gas and a substance having a large getter action on oxygen or water.
• the MgO target of the MgO film forming means 47 is sputtered to form the MgO layer 4 on the substrate 12 by the sputtering method.
• the substrate 12 on which the MgO layer 4 is formed is moved to the third film formation chamber 42, and the second ferromagnetic layer 3 having CoFeB force is formed thereon.
• the substrate moves again to the first film formation chamber 21, and the Ta upper electrode layer 10 is formed.
• it moves to the third film formation chamber 42 and a Ru layer is formed.
• the magnetoresistive effect element having the thin film configuration shown in FIG. 8 is formed.
• the magnetoresistive effect element formed in this way was able to obtain good characteristics with a high MR ratio even when the MgO layer was thin. As a result, a magnetoresistive element with a high MR ratio was obtained even with low RA.
• the getter effect is large with respect to the acidic gas deposited on the surface of the constituent member in the first film forming chamber for forming the MgO, and the material is Mg.
• MgO layer is deposited after the Mg layer, Mg is deposited on the surface of the component in the first deposition chamber immediately before the MgO deposition. It is considered that Mg deposited on the surface of the component in the first film forming chamber where MgO is formed has a high getter effect.
• the magnitude of the getter effect on the oxygen-containing gas also varies depending on the surface state of the substance, and the Mg film was deposited on the surface of the component in the deposition chamber immediately before the MgO layer was deposited. The surface of the Mg film is in a clean state, and a higher getter effect can be obtained. It is a possible power.
• the material has a large getter effect with respect to the acidic gas. Since Mg and Ta are deposited on the surface of the components in the MgO deposition chamber, the getter effect is large for the acidic gas, and the substance can be deposited in a wider and thicker region, so it is more effective. There is. However, the Ta electrode layer must be formed in the MgO deposition chamber! /, And! /, Only the Mg layer, which is not the case, is formed in the MgO deposition chamber, and the Ta layer forms the MgO layer. Even if it is formed in a deposition chamber different from the deposition chamber, it is effective.
• FIG. 10 shows various magnetoresistive effect elements having the structure shown in FIG. 1 on the surface of the constituent members in the first film forming chamber in which the MgO layer is formed immediately before the MgO layer is formed on the substrate 12.
• FIG. 3 is a diagram in which a magnetoresistive effect element is formed by forming an MgO film on a substrate 12 in a state where a substance is deposited, and an MR ratio is measured and compared.
• the implementation method will be described by taking Ti as an example of the material to be deposited on the surface of the constituent member in the first film forming chamber in which MgO is formed.
• a T film forming means was provided in the first film forming chamber.
• the first ferromagnetic layer 2 is sequentially stacked on the substrate 12.
• Ta is deposited on the surface of the component in the first film formation chamber when the Ta lower electrode layer is formed.
• a process of depositing Ti in the first deposition chamber 21 is inserted.
• the substrate 12 on which the layers up to the first ferromagnetic layer 2 are sequentially stacked is transported to the first film formation chamber 21 and held in the substrate holding unit 29, and the shirt 12 is closed and the substrate 12 is shielded.
• the target shatter is opened, and Ti is sputtered to deposit Ti on the surfaces of the film formation chamber wall 37, the deposition shield 36, the shatter, the partition plate 22, and the like.
• the MgO layer 4 is formed on the substrate 12 as in the first embodiment.
• a thin film is laminated as in the first embodiment to form a magnetoresistive element.
• an MgO layer was formed to form a magnetoresistive element, and the MR ratio was measured.
• the MR ratio was about 50%
• CuN, CoFe, Ru, and CoFeB were deposited and the MgO layer was sputtered.
• the MR ratio was about 70% to 130%.
• a material having a getter effect larger than that of MgO has an effect of improving device characteristics.
• the material to be deposited on the surface of the constituent member in the film forming chamber for depositing MgO in addition to Ta of the first and second embodiments of the present invention and Mg of the third embodiment, Ti, Cr If Zr, etc. is adopted as appropriate, the effect of improving the device characteristics is significant.
• the magnitude of the getter effect with respect to the acidic gas can be compared using the value of the oxygen gas adsorption energy of the substance as an index.
• the oxygen gas adsorption energy values of Ti, Ta, Mg, Cr, and Zr, which had high MR ratios are as large as 145kcalZmoU.
• the insulator layer MgO film was deposited in a state where a substance having a large getter effect with respect to the acidic gas was deposited on the surface of the constituent member in the deposition chamber, and the magnetoresistive effect If an element is formed, it is considered that good device characteristics with a high MR ratio can be obtained even with low RA.
• a magnetoresistive element with a high MR ratio can be obtained even with low RA by sufficiently gettering an acidic gas such as water or water.
• an acidic gas such as water or water.
• Nb, Mo, W, Mn, Hf, V, B, Si, Al, Ge, etc. which have oxygen gas adsorption energy values as large as 145 kcal / moU, are considered effective.
• the substance deposited on the inner wall of the deposition chamber for depositing MgO has a large getter effect with respect to the acidic gas, and the substance should be mainly included.
• the substance to be deposited on the surface of the constituent member in the MgO film forming chamber has a large getter effect with respect to the acidic gas in the substance constituting the magnetoresistive element.
• a substance with a large getter effect is selected from the inert gas, and its composition is formed in the MgO film formation chamber.
• Membrane means can be provided.
• the substance to be deposited on the surface of the constituent member in the MgO film forming chamber is a substance having an oxygen gas adsorption energy value of 145 kcal Zmol or more of the substance. Acidic gas power such as water Gettering was sufficiently performed on the surface of the components in the MgO film forming chamber.
• the timing of deposition in the MgO film formation chamber be immediately before the MgO film formation. This is because the magnitude of the getter effect with respect to the acidic gas varies depending on the surface state of the substance, and it is considered that a high getter effect can be obtained if the surface is clean.
• the material to be deposited in the MgO deposition chamber may be Ta, Ti, Mg, Zr, Nb, Mo, W, Cr, Mn, Hf, V, B, Si, Al, or Ge. desirable.
• the material deposited in the MgO deposition chamber is a material that forms a thin film layer constituting the target magnetoresistive element
• the means and the thin film layer deposited in the MgO deposition chamber Since it can also serve as a means for forming the film and can also serve as a process, the apparatus can be made compact and the process can be shortened.
• FIG. 11 is a diagram showing an example of a thin film configuration of a magnetoresistive effect element having an MgO layer manufactured in the fourth embodiment of the present invention
• FIG. 12 is a diagram of the manufacturing apparatus of the fourth embodiment of the present invention
• FIG. 13 is a cross-sectional view for explaining the internal configuration of the first film forming chamber
• FIG. 13 is a diagram showing the RA * MR ratio characteristics of the MgO layer of the magnetoresistive effect element according to the fourth example of the present invention.
• components having substantially the same functions and configurations as those in FIGS. 1, 3, 6, and 8 are denoted by the same reference numerals, and detailed descriptions of the same portions are omitted. To do.
• the thin film structure of the magnetoresistive element having the MgO layer manufactured in this example is Si (silicon) with Th-Ox (single-layer thermal oxide film) formed on the surface.
• the first Ta layer 61a (thickness 5. Onm)
• the first CuN layer 62a (thickness 20 nm)
• the second Ta layer 61b (thickness 3. Onm)
• the second CuN Lower electrode part 640 with layer 62b (thickness 20 nm) and force, underlayer consisting of Ta layer 68 (thickness 3. Onm) and Ru layer 69 (thickness 5.
• anti-strength with IrMn iridium manganese force Magnetic layer 80 (film thickness 7.01111), (Film thickness 2.5 nm), Ru layer 5 (film thickness 0.85 nm), first ferromagnetic layer 2 made of CoFeB (film thickness 3.0 nm), from MgO Comprising an insulating layer 4 (film thickness 1. 0 nm), the second ferromagnetic layer 3 (film thickness 3. onm) consisting of C O FeB, Ta layer 10a (film thickness 8. onm) and Cu layer 10c (thickness 30 nm) and Ta layer 10b (thickness 5. Onm) are stacked on top electrode layer and Ru layer 11 (thickness 7. Onm) to prevent oxidation.
• the underlayer consisting of Ta layer 68 and Ru layer 69 is for crystal growth of the antiferromagnetic layer.
• the magnetoresistive effect element manufacturing apparatus having the MgO layer in the present example has almost the same configuration force as the film forming apparatus shown in FIG. 2 or FIG. 7, but the first film forming chamber 21 is shown in FIG. 1 It is configured as shown in 2.
• the surface of the substrate holding portion 29 is covered with an insulator that also has an aluminum nitride (A1N) force, and the force that describes the force.
• a substrate mounting table 290 is provided between the substrate 12 and the substrate 12.
• the substrate 12 is directly mounted on the substrate mounting table 290.
• the substrate mounting table 290 may be any structure that can be insulated at least at the portion where the substrate holding unit 29 and the substrate 12 are in contact.
• the substrate mounting table 290 itself may be configured by spraying an insulating material such as 2 3), or the substrate mounting table 290 itself may be configured by an insulating material. In this manner, the substrate 12 is in a state of being completely electrically floated (floating state), that is, the substrate 12 is set to a floating potential. Further, it is only necessary that the substrate 12 and the substrate mounting table 290 and the substrate holding unit 29 are electrically insulated. Note that the surface of the substrate holder 29 itself according to the present embodiment may not be covered with an insulator.
• the substrate mounting table 290 and the substrate holding unit 29 are disconnected. It can also be realized by means of rimming, insulating the substrate holding part 29 and the ground, etc., as long as it is insulated at any part between the substrate 12 and the ground. Further, as an isolation method, for example, an insulating material is inserted, constituent members such as the substrate mounting table 290 and the substrate holding unit 29 are formed of an insulating material, only the insulating portion (contact portion). There are various methods such as forming the insulator with an insulator or separating the insulating portions from each other.
• the manufacturing method of the magnetoresistive effect element having the MgO layer in this example is as described above.
• the substrate holding unit 29 and the substrate 12 are insulated, and the MgO layer 4 is formed in a state where the substrate 12 is electrically floated (floating state).
• the substrate 12 is coated with a material having a large getter effect (such as Ta) on the acidic gas on the surface of the constituent members in the first film forming chamber 21 where the MgO layer 4 is formed.
• a material having a large getter effect such as Ta
• the substrate mounting table 290 is configured by spraying Al 2 O on the surface of a stainless steel plate, it is approximately 0.
• the substrate 12 can also be put in a floating state by configuring the plate mounting table 290 itself with an A1N plate (thickness of about 14 mm) as an insulator. Therefore, a magnetoresistive element having the MgO layer configured as described above was manufactured, and the RA.MR ratio characteristics of the MgO layer of the magnetoresistive element were compared (FIG. 13).
• FIG. 13 shows the characteristics when using the substrate mounting table 290 made of stainless steel plate, and ( ⁇ ) shows about 0.2 mm thick AlO sprayed on the surface of the stainless steel plate. The characteristics when using the substrate mounting table 290, ( ⁇ ) is the thickness
• the substrate mounting table 290 which has plate strength ( ⁇ )
• FIG. 14 is a cross-sectional view for explaining the internal configuration of the first film formation chamber of the manufacturing apparatus according to the sixth embodiment of the present invention. Note that components having substantially the same functions and configurations as those in FIGS. 3 and 12 are denoted by the same reference numerals, and detailed descriptions of the same portions are omitted.
• the surface of the constituent member in the first film forming chamber 21 where the MgO layer 4 is formed has a large getter effect on the oxidizing gas! /, Substance (Ta, etc.)
• the film forming apparatus or the film forming method for forming the MgO layer 4 on the substrate 12 has been described, the material is not necessarily applied. That is, in the sixth embodiment, the substrate holding portion 29 and the substrate 12 that do not deposit the substance (such as Ta) on the surface of the constituent member inside the first film forming chamber 21 in which the MgO layer 4 is formed are provided.
• the MgO layer 4 is formed in a state where the substrate 12 is electrically insulated and in a state where it is completely floating (at a floating potential). Therefore, in the manufacturing apparatus in the present embodiment, the substrate mounting table 290 similar to the substrate mounting table 290 in the fifth embodiment described above is provided between the substrate holding portion 29 and the substrate 12, and this substrate mounting table The substrate 12 is directly placed on 290. In this embodiment, since the substance (such as Ta) is not deposited on the surface of the constituent members in the first film forming chamber 21 in which the MgO layer 4 is formed, the inside of the first film forming chamber 21 is shown in FIG.
• FIG. 15 is a diagram showing a configuration in the vicinity of the substrate holding portion of the manufacturing apparatus according to the seventh embodiment of the present invention.
• FIG. 15 (a) is a diagram showing a state where the mask and the substrate are in contact with each other. ) Indicates the state where the mask and the substrate are separated
• FIG. 16 shows the RA 'MR ratio characteristics of the MgO layer of the magnetoresistive effect element according to this example. Note that components having substantially the same functions and configurations as those in FIGS. 3 and 12 are described with the same reference numerals, and detailed descriptions of the same portions are omitted.
• the step of forming the MgO layer 4 includes the substrate mounting table 290 described above between the substrate holding portion 29 and the substrate 12, and the substrate The substrate 12 is directly mounted on the mounting table 290, and the metal mask 295 and the substrate 12 are separated from each other while the substrate 12 is at a floating potential.
• the substrate 12 may be in a floating potential state by another method described above.
• the mask 295 and the substrate 12 are set to 0.5 mm, for example, as long as they are separated from each other by a distance that can prevent the sputter particles from entering the back surface of the substrate 12. In this manner, the mask 295 and the substrate 12 are separated from each other, whereby the mask 295 and the substrate 12 are electrically insulated.
• the mask refers to the substrate in order to prevent film formation particles from forming around the back side of the substrate when the film formation process is performed on the substrate.
• ⁇ A component that covers the periphery.
• the step of forming the MgO layer 4 when the mask 295 is brought into contact with the peripheral portion of the substrate 12 as shown in FIG. 15 (a), and with the mask 295 as shown in FIG. 15 (b). Based on each of the cases where the substrate 12 was separated, magnetoresistive elements having MgO layers were manufactured, and the MR ratio characteristics of the MgO layers of the magnetoresistive elements were compared (FIG. 16).
• the black triangle ( ⁇ ) indicates the characteristics when the mask 295 is in contact with the periphery of the substrate 12
• the black circle ( ⁇ ) indicates the characteristics when the mask 295 and the substrate 12 are separated from each other. Yes.
• the MR ratio is higher when mask 295 and substrate 12 are separated ( ⁇ ) than when mask 295 and substrate 12 are in contact ( ⁇ ).
• the lower RA is higher. It solves the issue of balancing MR ratios. Therefore, by separating the metal mask 295 and the substrate 12 from each other, the mask 295 and the substrate 12 are electrically insulated from each other, and current is prevented from flowing through the MgO layer during the MgO film formation. As a result, it is considered that the deterioration of the film quality of the MgO layer can be prevented, and the deterioration of the characteristics of the magnetoresistive element can be avoided.
• the film forming apparatus of the present embodiment has been described as an apparatus having three film forming chambers, but the present invention is not limited thereto. Further, although the apparatus has been described as having two or three film forming means in the film forming chamber, the present invention is not limited to this. Moreover, it is not limited to the film formation chamber shape of the apparatus of the present embodiment.
• the constituent members in the film forming chamber for depositing a substance having a large getter effect with respect to the acidic gas such as oxygen and water are the walls of the film forming chamber and the deposition shield.
• the deposition shield Although described as a cutting board or a shirt, it is not limited to this. It is important that the film is deposited on the surface of the component inside the film forming chamber, and other configurations may be used.
• each layer of the magnetoresistive effect element has been described by the sputtering method, but it can also be formed by other film forming methods such as vapor deposition, and the film forming method is particularly limited. is not.
• FIG. 1 is a diagram showing an example of a thin film configuration of a magnetoresistive effect element having an MgO insulator layer manufactured in a first example of the present invention.
• FIG. 2 is a schematic plan view showing an example of a configuration of a film forming chamber of the manufacturing apparatus according to the first embodiment of the present invention.
• 3] A sectional view for explaining the internal configuration of the first film forming chamber of the manufacturing apparatus shown in FIG.
• V 5 This is a diagram comparing the RA'MR ratio characteristics of the MgO layer of the magnetoresistive effect element between the manufacturing method according to the present invention and the conventional manufacturing method.
• FIG. 6 is a diagram showing an example of a thin film configuration of a magnetoresistive effect element having an MgO insulator layer manufactured in a second example of the present invention.
• FIG. 7 A schematic plan view showing an example of the configuration of the film quality of the manufacturing apparatus according to the second embodiment of the present invention.
• FIG. 8 is a view showing an example of a thin film configuration of a magnetoresistive effect element having an MgO insulator layer manufactured in a third embodiment of the present invention.
• FIG. 9 is a schematic plan view showing an example of the film quality of the manufacturing apparatus according to the third embodiment of the present invention.
• FIG. 10 In the magnetoresistive effect element having the configuration shown in FIG. 1, various substances are formed on the surface of the constituent members in the first film forming chamber in which the MgO layer is formed immediately before the MgO layer is formed on the substrate 12.
• FIG. 5 is a diagram in which a MgO layer is formed on a substrate 12 to form a magnetoresistive effect element, and an MR ratio is measured and compared in a state where is deposited.
• FIG. 11 is a view showing an example of a thin film configuration of a magnetoresistive effect element having an MgO insulator layer manufactured in a fifth embodiment of the present invention.
• FIG. 12 is a cross-sectional view for explaining the internal configuration of the first film formation chamber of the manufacturing apparatus according to the fifth embodiment of the present invention.
• FIG. 13 is a diagram showing the RA′MR ratio characteristics of the MgO layer of the magnetoresistive effect element according to the fifth example of the present invention.
• FIG. 14 is a cross-sectional view for explaining the internal configuration of the first film formation chamber of the manufacturing apparatus according to the sixth embodiment of the present invention.
• FIG. 15 is a diagram showing a configuration in the vicinity of a substrate holding portion of a manufacturing apparatus according to a seventh embodiment of the present invention, (a) is a diagram showing a state where the mask and the substrate are in contact, and (b) is a diagram showing , Mask and substrate are separated FIG.
• FIG. 16 is a graph showing the RA′MR ratio characteristics of the MgO layer of the magnetoresistive effect element according to the seventh example of the present invention.
• Vacuum exhaust means Deposition shield film deposition chamber wall Second deposition chamber Third deposition chamber Transfer chamber

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