JP2020534692A5 - - Google Patents
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- JP2020534692A5 JP2020534692A5 JP2020515916A JP2020515916A JP2020534692A5 JP 2020534692 A5 JP2020534692 A5 JP 2020534692A5 JP 2020515916 A JP2020515916 A JP 2020515916A JP 2020515916 A JP2020515916 A JP 2020515916A JP 2020534692 A5 JP2020534692 A5 JP 2020534692A5
- Authority
- JP
- Japan
- Prior art keywords
- gas
- plasma
- chamber
- pulse frequency
- processing volume
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- 239000007789 gas Substances 0.000 claims 50
- 238000000034 method Methods 0.000 claims 21
- 238000000151 deposition Methods 0.000 claims 15
- 239000000758 substrate Substances 0.000 claims 14
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 12
- 230000008021 deposition Effects 0.000 claims 6
- 229910052757 nitrogen Inorganic materials 0.000 claims 6
- 229910052710 silicon Inorganic materials 0.000 claims 6
- 239000010703 silicon Substances 0.000 claims 6
- 239000001307 helium Substances 0.000 claims 2
- 229910052734 helium Inorganic materials 0.000 claims 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims 1
- 239000003989 dielectric material Substances 0.000 claims 1
- 229910000077 silane Inorganic materials 0.000 claims 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201762561336P | 2017-09-21 | 2017-09-21 | |
| US62/561,336 | 2017-09-21 | ||
| PCT/US2018/047067 WO2019060069A1 (en) | 2017-09-21 | 2018-08-20 | High aspect ratio deposition |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2020534692A JP2020534692A (ja) | 2020-11-26 |
| JP2020534692A5 true JP2020534692A5 (enExample) | 2021-09-30 |
Family
ID=65811439
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020515916A Pending JP2020534692A (ja) | 2017-09-21 | 2018-08-20 | 高アスペクト比堆積 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20200216959A1 (enExample) |
| JP (1) | JP2020534692A (enExample) |
| KR (1) | KR20200045565A (enExample) |
| CN (1) | CN111108581A (enExample) |
| SG (1) | SG11202001592XA (enExample) |
| WO (1) | WO2019060069A1 (enExample) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20200381623A1 (en) * | 2019-05-31 | 2020-12-03 | Applied Materials, Inc. | Methods of forming silicon nitride encapsulation layers |
| WO2020247531A1 (en) | 2019-06-06 | 2020-12-10 | Applied Materials, Inc. | Methods of post treating silicon nitride based dielectric films with high energy low dose plasma |
| TWI853988B (zh) | 2019-07-29 | 2024-09-01 | 美商應用材料股份有限公司 | 原子層沉積之多層封裝堆疊 |
| US11276570B2 (en) * | 2020-07-22 | 2022-03-15 | Applied Materials, Inc. | Multi-layer deposition and treatment of silicon nitride films |
| US12131903B2 (en) | 2020-08-06 | 2024-10-29 | Applied Materials, Inc. | Pulsed-plasma deposition of thin film layers |
| US12142459B2 (en) * | 2020-09-08 | 2024-11-12 | Applied Materials, Inc. | Single chamber flowable film formation and treatments |
| US11800824B2 (en) | 2021-03-24 | 2023-10-24 | Applied Materials, Inc. | Low temperature silicon nitride/silicon oxynitride stack film with tunable dielectric constant |
| CN117546277A (zh) * | 2021-08-23 | 2024-02-09 | 株式会社国际电气 | 半导体装置的制造方法、基板处理方法、基板处理装置以及程序 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4610080B2 (ja) * | 2000-12-25 | 2011-01-12 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US6756318B2 (en) * | 2001-09-10 | 2004-06-29 | Tegal Corporation | Nanolayer thick film processing system and method |
| US20060105106A1 (en) * | 2004-11-16 | 2006-05-18 | Applied Materials, Inc. | Tensile and compressive stressed materials for semiconductors |
| US7745346B2 (en) * | 2008-10-17 | 2010-06-29 | Novellus Systems, Inc. | Method for improving process control and film conformality of PECVD film |
| US8563428B2 (en) * | 2010-09-17 | 2013-10-22 | Applied Materials, Inc. | Methods for depositing metal in high aspect ratio features |
| JP2012149278A (ja) * | 2011-01-17 | 2012-08-09 | Mitsui Chemicals Inc | シリコン含有膜の製造方法 |
| JP2012216631A (ja) * | 2011-03-31 | 2012-11-08 | Tokyo Electron Ltd | プラズマ窒化処理方法 |
| US9576792B2 (en) * | 2014-09-17 | 2017-02-21 | Asm Ip Holding B.V. | Deposition of SiN |
| US9385318B1 (en) * | 2015-07-28 | 2016-07-05 | Lam Research Corporation | Method to integrate a halide-containing ALD film on sensitive materials |
| KR20180044432A (ko) * | 2015-09-18 | 2018-05-02 | 어플라이드 머티어리얼스, 인코포레이티드 | 고 종횡비 구조들 상의 실리콘 질화물의 저온 등각적 증착 |
| KR102395997B1 (ko) * | 2015-09-30 | 2022-05-10 | 삼성전자주식회사 | 자기 저항 메모리 소자 및 그 제조 방법 |
| KR20170092760A (ko) * | 2016-02-04 | 2017-08-14 | 주식회사 원익아이피에스 | 기판 처리 방법 및 장치 |
| CN114231947A (zh) * | 2016-02-26 | 2022-03-25 | 弗萨姆材料美国有限责任公司 | 组合物和使用其沉积含硅膜的方法 |
-
2018
- 2018-08-20 CN CN201880061340.1A patent/CN111108581A/zh active Pending
- 2018-08-20 JP JP2020515916A patent/JP2020534692A/ja active Pending
- 2018-08-20 WO PCT/US2018/047067 patent/WO2019060069A1/en not_active Ceased
- 2018-08-20 SG SG11202001592XA patent/SG11202001592XA/en unknown
- 2018-08-20 US US16/648,209 patent/US20200216959A1/en not_active Abandoned
- 2018-08-20 KR KR1020207010974A patent/KR20200045565A/ko not_active Ceased
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