JP2016063223A5 - - Google Patents

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Publication number
JP2016063223A5
JP2016063223A5 JP2015174358A JP2015174358A JP2016063223A5 JP 2016063223 A5 JP2016063223 A5 JP 2016063223A5 JP 2015174358 A JP2015174358 A JP 2015174358A JP 2015174358 A JP2015174358 A JP 2015174358A JP 2016063223 A5 JP2016063223 A5 JP 2016063223A5
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JP
Japan
Prior art keywords
substrate
valve
purge gas
gas
substrate support
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JP2015174358A
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English (en)
Japanese (ja)
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JP6578163B2 (ja
JP2016063223A (ja
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Priority claimed from US14/485,142 external-priority patent/US9460915B2/en
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JP2015174358A 2014-09-12 2015-09-04 裏面成膜を低減し、基板端部の厚さ変化を緩和するシステムおよび方法 Active JP6578163B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/485,142 US9460915B2 (en) 2014-09-12 2014-09-12 Systems and methods for reducing backside deposition and mitigating thickness changes at substrate edges
US14/485,142 2014-09-12

Publications (3)

Publication Number Publication Date
JP2016063223A JP2016063223A (ja) 2016-04-25
JP2016063223A5 true JP2016063223A5 (enExample) 2018-10-18
JP6578163B2 JP6578163B2 (ja) 2019-09-18

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ID=55455423

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JP2015174358A Active JP6578163B2 (ja) 2014-09-12 2015-09-04 裏面成膜を低減し、基板端部の厚さ変化を緩和するシステムおよび方法

Country Status (5)

Country Link
US (2) US9460915B2 (enExample)
JP (1) JP6578163B2 (enExample)
KR (2) KR102454243B1 (enExample)
CN (2) CN108642474B (enExample)
TW (2) TWI675124B (enExample)

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US11970772B2 (en) 2014-08-22 2024-04-30 Lam Research Corporation Dynamic precursor dosing for atomic layer deposition
US10094018B2 (en) * 2014-10-16 2018-10-09 Lam Research Corporation Dynamic precursor dosing for atomic layer deposition
US11072860B2 (en) 2014-08-22 2021-07-27 Lam Research Corporation Fill on demand ampoule refill
TWI734770B (zh) 2016-04-24 2021-08-01 美商應用材料股份有限公司 用於防止空間ald處理腔室中之背側沉積的設備
US10777386B2 (en) * 2017-10-17 2020-09-15 Lam Research Corporation Methods for controlling plasma glow discharge in a plasma chamber
WO2019108377A1 (en) * 2017-11-29 2019-06-06 Tokyo Electron Limited Back-side friction reduction of a substrate
JP7178177B2 (ja) * 2018-03-22 2022-11-25 東京エレクトロン株式会社 基板処理装置
US12112930B2 (en) 2018-08-31 2024-10-08 Taiwan Semiconductor Manufacturing Company, Ltd. Method for improving deposition process
US12412736B2 (en) * 2018-09-28 2025-09-09 Lam Research Corporation Methods and systems for managing byproduct material accumulation during plasma-based semiconductor wafer fabrication process
US20220136107A1 (en) * 2019-01-31 2022-05-05 Lam Research Corporation Showerhead with configurable gas outlets
KR102505474B1 (ko) 2019-08-16 2023-03-03 램 리써치 코포레이션 웨이퍼 내에서 차동 보우를 보상하기 위한 공간적으로 튜닝 가능한 증착
US11031236B2 (en) 2019-10-01 2021-06-08 Taiwan Semiconductor Manufacturing Co., Ltd. Method for improving surface of semiconductor device
CN112981372B (zh) * 2019-12-12 2024-02-13 Asm Ip私人控股有限公司 衬底支撑板、包括它的衬底处理设备以及衬底处理方法
WO2021127272A1 (en) * 2019-12-20 2021-06-24 Lam Research Corporation Semiconductor processing chucks featuring recessed regions near outer perimeter of wafer for mitigation of edge/center nonuniformity
US11923295B2 (en) 2020-02-19 2024-03-05 Taiwan Semiconductor Manufacturing Co., Ltd. Interconnect level with high resistance layer and method of forming the same
US11495483B2 (en) * 2020-10-15 2022-11-08 Applied Materials, Inc. Backside gas leakby for bevel deposition reduction
US12009246B2 (en) * 2021-03-26 2024-06-11 Taiwan Semiconductor Manufacturing Co., Ltd. Substrate holder and methods of use
CN116334583A (zh) * 2021-12-22 2023-06-27 中微半导体设备(上海)股份有限公司 加热装置、化学气相沉积设备及吹扫方法
JP2023162983A (ja) * 2022-04-27 2023-11-09 東京エレクトロン株式会社 基板処理方法及び基板処理装置

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