CN105420685B - 用于减少背面沉积和减少基片边缘处的厚度变化的系统和方法 - Google Patents

用于减少背面沉积和减少基片边缘处的厚度变化的系统和方法 Download PDF

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CN105420685B
CN105420685B CN201510582177.1A CN201510582177A CN105420685B CN 105420685 B CN105420685 B CN 105420685B CN 201510582177 A CN201510582177 A CN 201510582177A CN 105420685 B CN105420685 B CN 105420685B
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gas
backside
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edge
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CN105420685A (zh
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赛沙·瓦拉达拉简
尚卡·斯瓦米纳坦
桑格伦特·桑普伦格
弗兰克·帕斯夸里
泰德·明歇尔
阿德里安·拉瓦伊
穆罕默德·萨布里
科迪·巴尼特
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Lam Research Corp
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    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
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    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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CN201510582177.1A 2014-09-12 2015-09-14 用于减少背面沉积和减少基片边缘处的厚度变化的系统和方法 Active CN105420685B (zh)

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CN201810478814.4A CN108642474B (zh) 2014-09-12 2015-09-14 一种用于在基片上沉积膜的基片处理系统

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