CN111108581A - 高深宽比沉积 - Google Patents

高深宽比沉积 Download PDF

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Publication number
CN111108581A
CN111108581A CN201880061340.1A CN201880061340A CN111108581A CN 111108581 A CN111108581 A CN 111108581A CN 201880061340 A CN201880061340 A CN 201880061340A CN 111108581 A CN111108581 A CN 111108581A
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gas
plasma
pulse frequency
process space
aspect ratio
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CN201880061340.1A
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Chinese (zh)
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S·慕克吉
A·B·玛里克
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Applied Materials Inc
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Applied Materials Inc
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    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
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    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
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  • Spectroscopy & Molecular Physics (AREA)
  • Analytical Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Chemical Vapour Deposition (AREA)
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