JP2011523506A5 - - Google Patents

Download PDF

Info

Publication number
JP2011523506A5
JP2011523506A5 JP2011508715A JP2011508715A JP2011523506A5 JP 2011523506 A5 JP2011523506 A5 JP 2011523506A5 JP 2011508715 A JP2011508715 A JP 2011508715A JP 2011508715 A JP2011508715 A JP 2011508715A JP 2011523506 A5 JP2011523506 A5 JP 2011523506A5
Authority
JP
Japan
Prior art keywords
layer
stack
electrode
sensor
magnetic field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2011508715A
Other languages
English (en)
Japanese (ja)
Other versions
JP2011523506A (ja
Filing date
Publication date
Priority claimed from US12/117,396 external-priority patent/US7965077B2/en
Application filed filed Critical
Publication of JP2011523506A publication Critical patent/JP2011523506A/ja
Publication of JP2011523506A5 publication Critical patent/JP2011523506A5/ja
Pending legal-status Critical Current

Links

JP2011508715A 2008-05-08 2009-05-08 複数のピニング方向を有する２軸磁場センサおよび該センサの製造方法 Pending JP2011523506A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/117,396 US7965077B2 (en) 2008-05-08 2008-05-08 Two-axis magnetic field sensor with multiple pinning directions
US12/117,396 2008-05-08
PCT/US2009/043354 WO2009137802A1 (en) 2008-05-08 2009-05-08 Two-axis magnetic field sensor with multiple pinning directions and method to produce the sensor

Publications (2)

Publication Number Publication Date
JP2011523506A JP2011523506A (ja) 2011-08-11
JP2011523506A5 true JP2011523506A5 (enExample) 2012-06-07

Family

ID=40852562

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011508715A Pending JP2011523506A (ja) 2008-05-08 2009-05-08 複数のピニング方向を有する２軸磁場センサおよび該センサの製造方法

Country Status (5)

Country Link
US (2) US7965077B2 (enExample)
JP (1) JP2011523506A (enExample)
CN (1) CN102057487B (enExample)
DE (1) DE112009001140T5 (enExample)
WO (1) WO2009137802A1 (enExample)

Families Citing this family (59)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8242776B2 (en) * 2008-03-26 2012-08-14 Everspin Technologies, Inc. Magnetic sensor design for suppression of barkhausen noise
US8269486B2 (en) * 2008-11-12 2012-09-18 Infineon Technologies Ag Magnetic sensor system and method
US8257596B2 (en) * 2009-04-30 2012-09-04 Everspin Technologies, Inc. Two-axis magnetic field sensor with substantially orthogonal pinning directions
JP5250109B2 (ja) 2009-06-12 2013-07-31 アルプス・グリーンデバイス株式会社 磁気平衡式電流センサ
US8779764B2 (en) * 2009-07-13 2014-07-15 Hitachi Metals, Ltd. Method for producing magnetoresistive effect element, magnetic sensor, rotation-angle detection device
US8284594B2 (en) 2009-09-03 2012-10-09 International Business Machines Corporation Magnetic devices and structures
US8390283B2 (en) 2009-09-25 2013-03-05 Everspin Technologies, Inc. Three axis magnetic field sensor
FR2954512B1 (fr) * 2009-12-21 2012-05-25 Commissariat Energie Atomique Realisation d'un dispositif a structures magnetiques formees sur un meme substrat et ayant des orientations d'aimantation respectives differentes
WO2011111493A1 (ja) * 2010-03-12 2011-09-15 アルプス・グリーンデバイス株式会社 電流センサ
WO2011111648A1 (ja) 2010-03-12 2011-09-15 アルプス電気株式会社 磁気センサ及びそれを用いた磁気平衡式電流センサ
US8518734B2 (en) 2010-03-31 2013-08-27 Everspin Technologies, Inc. Process integration of a single chip three axis magnetic field sensor
WO2012026255A1 (ja) 2010-08-23 2012-03-01 アルプス・グリーンデバイス株式会社 磁気平衡式電流センサ
US8508221B2 (en) * 2010-08-30 2013-08-13 Everspin Technologies, Inc. Two-axis magnetic field sensor having reduced compensation angle for zero offset
DE102010055754A1 (de) * 2010-12-22 2012-06-28 Sensitec Gmbh Magnetoresistives Sensorelement
CN202083786U (zh) * 2011-01-07 2011-12-21 江苏多维科技有限公司 薄膜磁电阻传感元件、多个传感元件的组合及与该组合耦合的电子装置
US8890266B2 (en) 2011-01-31 2014-11-18 Everspin Technologies, Inc. Fabrication process and layout for magnetic sensor arrays
CN102226835A (zh) 2011-04-06 2011-10-26 江苏多维科技有限公司 单一芯片双轴磁场传感器及其制备方法
CN102226836A (zh) * 2011-04-06 2011-10-26 江苏多维科技有限公司 单一芯片桥式磁场传感器及其制备方法
CN102621504B (zh) * 2011-04-21 2013-09-04 江苏多维科技有限公司 单片参考全桥磁场传感器
US9024632B2 (en) 2011-05-30 2015-05-05 Denso Corporation Magnetic sensor with a plurality of heater portions to fix the direction of magnetization of a pinned magnetic layer
CN102385043B (zh) * 2011-08-30 2013-08-21 江苏多维科技有限公司 Mtj三轴磁场传感器及其封装方法
CN102426344B (zh) 2011-08-30 2013-08-21 江苏多维科技有限公司 三轴磁场传感器
US8975891B2 (en) 2011-11-04 2015-03-10 Honeywell International Inc. Apparatus and method for determining in-plane magnetic field components of a magnetic field using a single magnetoresistive sensor
TWI431301B (zh) * 2012-03-05 2014-03-21 Ind Tech Res Inst 應用穿隧式磁電阻器之磁場感測方法及磁場感測裝置
US20130241542A1 (en) * 2012-03-14 2013-09-19 Wolfgang Raberg Xmr monocell sensors, systems and methods
US8786987B2 (en) * 2012-04-27 2014-07-22 Seagate Technology Llc Biased two dimensional magnetic sensor
CN102722932A (zh) * 2012-06-19 2012-10-10 兰州大学 一种验钞机磁头
US20140028307A1 (en) * 2012-07-26 2014-01-30 Udo Ausserlechner Magnetoresistive sensor systems and methods having a yaw angle between premagnetization and magnetic field directions
US20150069555A1 (en) * 2013-09-09 2015-03-12 Shintaro SAKAI Magnetic memory
JP6304989B2 (ja) * 2013-09-24 2018-04-04 株式会社東芝 圧力センサ、マイクロフォン、血圧センサ、タッチパネル、圧力センサの製造方法、および圧力センサの製造装置
US9618589B2 (en) * 2013-10-18 2017-04-11 Infineon Technologies Ag First and second magneto-resistive sensors formed by first and second sections of a layer stack
CN103592608B (zh) * 2013-10-21 2015-12-23 江苏多维科技有限公司 一种用于高强度磁场的推挽桥式磁传感器
US8953284B1 (en) * 2013-11-20 2015-02-10 HGST Netherlands B.V. Multi-read sensor having a narrow read gap structure
FR3020497B1 (fr) 2014-04-28 2016-05-13 Commissariat Energie Atomique Aimant permanent comportant un empilement de couches ferromagnetiques et antiferromagnetiques
US9449622B2 (en) 2014-10-29 2016-09-20 International Business Machines Corporation Differing magnetic read sensors on a magnetic head
US9418683B2 (en) 2014-10-29 2016-08-16 International Business Machines Corporation Mass production of multichannel current perpendicular to plane head modules via preferred milling
US9299369B1 (en) 2014-10-29 2016-03-29 International Business Machines Corporation Multichannel data storage apparatus having abrasion resistant barrier
DE102014116953B4 (de) 2014-11-19 2022-06-30 Sensitec Gmbh Verfahren und Vorrichtung zur Herstellung einer Magnetfeldsensorvorrichtung, sowie diesbezüglicheMagnetfeldsensorvorrichtung
CN104677266B (zh) * 2015-01-20 2017-11-10 江苏多维科技有限公司 强磁场误差校准的磁电阻角度传感器及其校准方法
EP3104187A1 (en) * 2015-06-09 2016-12-14 International Iberian Nanotechnology Laboratory Magnetoresistive sensor
US9739842B2 (en) 2016-01-26 2017-08-22 Nxp Usa, Inc. Magnetic field sensor with skewed sense magnetization of sense layer
US9897667B2 (en) 2016-01-26 2018-02-20 Nxp Usa, Inc. Magnetic field sensor with permanent magnet biasing
US9841469B2 (en) 2016-01-26 2017-12-12 Nxp Usa, Inc. Magnetic field sensor with multiple sense layer magnetization orientations
US10545196B2 (en) * 2016-03-24 2020-01-28 Nxp Usa, Inc. Multiple axis magnetic sensor
FR3050068B1 (fr) 2016-04-06 2018-05-18 Commissariat A L'energie Atomique Et Aux Energies Alternatives Aimant permanent comprenant un empilement de n motifs
US10145907B2 (en) 2016-04-07 2018-12-04 Nxp Usa, Inc. Magnetic field sensor with permanent magnet biasing
US9933496B2 (en) 2016-04-21 2018-04-03 Nxp Usa, Inc. Magnetic field sensor with multiple axis sense capability
CN110050355B (zh) * 2016-12-06 2023-06-23 艾沃思宾技术公司 磁阻设备及其方法
US10663537B2 (en) * 2017-04-07 2020-05-26 Crocus Technology Sa Magnetic sensor cell for measuring one- and two-dimensional magnetic fields and method for measuring said magnetic fields using the magnetic sensor cell
JP6510100B2 (ja) * 2018-02-28 2019-05-08 株式会社東芝 圧力センサ、マイクロフォン、血圧センサ、タッチパネル
WO2019242175A1 (en) * 2018-06-22 2019-12-26 Zhenghong Qian A three-axis magnetic sensor
JP7106103B2 (ja) * 2018-07-02 2022-07-26 国立大学法人東北大学 磁気センサ装置およびその製造方法
JP6881413B2 (ja) * 2018-10-15 2021-06-02 Tdk株式会社 磁気センサ
US11415645B2 (en) * 2019-08-23 2022-08-16 Western Digital Technologies, Inc. Magnetic sensor array with one TMR stack having two free layers
US11513175B2 (en) * 2020-02-11 2022-11-29 Globalfoundries Singapore Pte. Ltd. Tunnel magnetoresistance sensor devices and methods of forming the same
DE102021202924A1 (de) 2021-03-25 2022-09-29 Robert Bosch Gesellschaft mit beschränkter Haftung Verfahren für ein lokales Modifizieren einer Schichteigenschaft, Verfahren zum Herstellen einer magnetoresistiven Sensoreinrichtung und magnetoresistive Sensoreinrichtung
JP7735068B2 (ja) * 2021-03-31 2025-09-08 本田技研工業株式会社 薄膜センサ
CN116106801B (zh) * 2023-04-14 2023-06-20 珠海多创科技有限公司 磁阻传感器、磁传感装置及其制备方法
CN116930833B (zh) * 2023-09-18 2024-01-12 江苏多维科技有限公司 磁传感器及其制备方法

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1041132A (ja) * 1996-07-18 1998-02-13 Sanyo Electric Co Ltd 磁気抵抗効果膜
JPH10233146A (ja) * 1997-02-19 1998-09-02 Nec Corp 強磁性物体通過センサ
EP1329695B1 (fr) * 1997-05-09 2005-10-05 Tesa SA Capteur de type magnétorésistif pour mesure de dimension
US5919580A (en) * 1997-05-22 1999-07-06 University Of Alabama Spin valve device containing a Cr-rich antiferromagnetic pinning layer
US6324029B1 (en) 1998-06-29 2001-11-27 International Business Machines Corporation Method and system for GMR sensor reset pulse application
CA2426666A1 (en) * 2000-09-29 2002-04-04 Solvay Pharmaceuticals B.V. Ion-strength independent sustained release pharmaceutical formulation
JP4085859B2 (ja) * 2002-03-27 2008-05-14 ヤマハ株式会社 磁気センサおよびその製造方法
US7172904B2 (en) 2002-07-31 2007-02-06 Freescale Semiconductor, Inc. High sensitivity sensor for tagged magnetic bead bioassays
JP4016857B2 (ja) 2002-10-18 2007-12-05 ヤマハ株式会社 磁気センサ及びその製造方法
US7054114B2 (en) * 2002-11-15 2006-05-30 Nve Corporation Two-axis magnetic field sensor
CN2591723Y (zh) * 2002-12-24 2003-12-10 中国科学院物理研究所 具有叠层铁磁层的钉扎薄膜
US7016163B2 (en) * 2003-02-20 2006-03-21 Honeywell International Inc. Magnetic field sensor
US6946697B2 (en) 2003-12-18 2005-09-20 Freescale Semiconductor, Inc. Synthetic antiferromagnet structures for use in MTJs in MRAM technology
JP4557134B2 (ja) * 2004-03-12 2010-10-06 ヤマハ株式会社 磁気センサの製造方法、同磁気センサの製造方法に使用されるマグネットアレイ及び同マグネットアレイの製造方法
US7196875B2 (en) 2004-03-24 2007-03-27 Honeywell International Inc. Permalloy sensor having individual permalloy resist pattern runners with lengths perpendicular to a wafer level anisotropy
US7474094B2 (en) * 2004-08-31 2009-01-06 International Business Machines Corporation Reorientation of magnetic layers and structures having reoriented magnetic layers
US7541804B2 (en) 2005-07-29 2009-06-02 Everspin Technologies, Inc. Magnetic tunnel junction sensor
US8283184B2 (en) 2005-09-21 2012-10-09 Siemens Aktiengesellschaft Method for measurement of very small local magnetic fields, in particular for measurement of local magnetic stray fields produced by magnetic beads, and an associated device for carrying out the method
US7547480B2 (en) 2005-10-28 2009-06-16 Everspin Technologies, Inc. Magnetic tunnel junction pressure sensors and methods
JP4739963B2 (ja) * 2006-01-18 2011-08-03 アルプス電気株式会社 車載用ｇｍｒ角度センサ
US7280389B2 (en) * 2006-02-08 2007-10-09 Magic Technologies, Inc. Synthetic anti-ferromagnetic structure with non-magnetic spacer for MRAM applications
JP4921897B2 (ja) * 2006-09-05 2012-04-25 株式会社東芝 磁気センサー
US7961440B2 (en) * 2007-09-27 2011-06-14 Hitachi Global Storage Technologies Netherlands B.V. Current perpendicular to plane magnetoresistive sensor with reduced read gap

Similar Documents

Publication Publication Date Title
JP2011523506A5 (enExample)
JP6972221B2 (ja) 磁気抵抗センサ
CN202013413U (zh) 单一芯片桥式磁场传感器
Sheng et al. Flexible magnetic thin films and devices
JP2012133864A5 (enExample)
JP2017505538A5 (enExample)
JP2014515470A (ja) シングルチップ２軸ブリッジ型磁界センサ
JP2008507854A5 (enExample)
JP2011137811A5 (enExample)
JP2011129930A5 (enExample)
Liu et al. Fabrication, properties, and applications of flexible magnetic films
ATE543104T1 (de) Auf magnettunnelübergang (mtj) basierender magnetfeldwinkelsensor
CN103563000A (zh) 电压控制的磁各向异性（vcma）开关和电磁存储器（meram）
WO2012136132A1 (zh) 单一芯片桥式磁场传感器及其制备方法
JP2006019383A5 (enExample)
JP2012533190A5 (enExample)
TWI632711B (zh) Magnetoresistance effect element
JP2018073913A5 (enExample)
CN103323796A (zh) 一种以石墨烯作为势垒层的mtj磁场传感器
CN110212085A (zh) 测量范围可调的巨磁电阻传感器及其制备方法
JP2005019990A5 (enExample)
WO2013020569A1 (en) Magnetoresistive memory with low critical current for magnetization switching
WO2015032925A3 (en) Method of producing a multilayer magnetoelectronic device and magnetoelectronic device
CN117295387B (zh) 一种桥式磁阻传感器的制备方法
JP2015162515A (ja) 磁気センサ