JP2005019990A5 - - Google Patents

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Publication number
JP2005019990A5
JP2005019990A5 JP2004180612A JP2004180612A JP2005019990A5 JP 2005019990 A5 JP2005019990 A5 JP 2005019990A5 JP 2004180612 A JP2004180612 A JP 2004180612A JP 2004180612 A JP2004180612 A JP 2004180612A JP 2005019990 A5 JP2005019990 A5 JP 2005019990A5
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JP
Japan
Prior art keywords
ferromagnetic
film
layer
contact
magnetization direction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2004180612A
Other languages
English (en)
Japanese (ja)
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JP2005019990A (ja
Filing date
Publication date
Priority claimed from US10/602,504 external-priority patent/US6893741B2/en
Application filed filed Critical
Publication of JP2005019990A publication Critical patent/JP2005019990A/ja
Publication of JP2005019990A5 publication Critical patent/JP2005019990A5/ja
Pending legal-status Critical Current

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JP2004180612A 2003-06-24 2004-06-18 改良された反強磁性結合膜を有する磁気装置 Pending JP2005019990A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/602,504 US6893741B2 (en) 2003-06-24 2003-06-24 Magnetic device with improved antiferromagnetically coupling film

Publications (2)

Publication Number Publication Date
JP2005019990A JP2005019990A (ja) 2005-01-20
JP2005019990A5 true JP2005019990A5 (enExample) 2007-07-26

Family

ID=33418633

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004180612A Pending JP2005019990A (ja) 2003-06-24 2004-06-18 改良された反強磁性結合膜を有する磁気装置

Country Status (9)

Country Link
US (1) US6893741B2 (enExample)
EP (1) EP1492134B1 (enExample)
JP (1) JP2005019990A (enExample)
KR (1) KR20050001361A (enExample)
CN (1) CN1573946A (enExample)
DE (1) DE602004007986T2 (enExample)
MY (1) MY134560A (enExample)
SG (1) SG117500A1 (enExample)
TW (1) TW200501084A (enExample)

Families Citing this family (21)

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US7323215B2 (en) * 2004-05-14 2008-01-29 Headway Technologies, Inc. Free layer design for CPP GMR enhancement
US7576956B2 (en) * 2004-07-26 2009-08-18 Grandis Inc. Magnetic tunnel junction having diffusion stop layer
US7390530B2 (en) * 2004-11-30 2008-06-24 Headway Technologies, Inc. Structure and process for composite free layer in CPP GMR device
US7382590B2 (en) * 2005-01-31 2008-06-03 Hitachi Global Storage Technologies Netherlands B.V. MR sensor and thin film media having alloyed Ru antiparallel spacer layer for enhanced antiparallel exchange coupling
US7973349B2 (en) * 2005-09-20 2011-07-05 Grandis Inc. Magnetic device having multilayered free ferromagnetic layer
US7777261B2 (en) * 2005-09-20 2010-08-17 Grandis Inc. Magnetic device having stabilized free ferromagnetic layer
US7859034B2 (en) * 2005-09-20 2010-12-28 Grandis Inc. Magnetic devices having oxide antiferromagnetic layer next to free ferromagnetic layer
US7430135B2 (en) * 2005-12-23 2008-09-30 Grandis Inc. Current-switched spin-transfer magnetic devices with reduced spin-transfer switching current density
US20070246787A1 (en) * 2006-03-29 2007-10-25 Lien-Chang Wang On-plug magnetic tunnel junction devices based on spin torque transfer switching
US7851840B2 (en) * 2006-09-13 2010-12-14 Grandis Inc. Devices and circuits based on magnetic tunnel junctions utilizing a multilayer barrier
JP2008204539A (ja) * 2007-02-20 2008-09-04 Fujitsu Ltd 垂直磁気記録媒体およびその製造方法、磁気記録装置
US7957179B2 (en) * 2007-06-27 2011-06-07 Grandis Inc. Magnetic shielding in magnetic multilayer structures
US7982275B2 (en) * 2007-08-22 2011-07-19 Grandis Inc. Magnetic element having low saturation magnetization
US7894248B2 (en) * 2008-09-12 2011-02-22 Grandis Inc. Programmable and redundant circuitry based on magnetic tunnel junction (MTJ)
KR20130017267A (ko) * 2011-08-10 2013-02-20 에스케이하이닉스 주식회사 반도체 장치 및 그 제조 방법
US9406365B1 (en) * 2015-01-26 2016-08-02 International Business Machines Corporation Underlayers for textured films of Heusler compounds
CN104678332B (zh) * 2015-02-28 2018-03-27 三峡大学 一种基于2d人造磁振子晶体的弱磁探测器件
JP2020068214A (ja) * 2017-02-28 2020-04-30 Tdk株式会社 強磁性多層膜、磁気抵抗効果素子、及び強磁性多層膜を製造する方法
US10204671B2 (en) 2017-03-10 2019-02-12 Simon Fraser University Applications of non-collinearly coupled magnetic layers
JP7024914B2 (ja) * 2019-05-16 2022-02-24 Tdk株式会社 磁壁移動素子及び磁気記録アレイ
CN114551716B (zh) * 2020-11-26 2025-11-11 浙江驰拓科技有限公司 磁性隧道结自由层及具有其的磁性隧道结结构

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US4814921A (en) * 1984-10-17 1989-03-21 Hitachi, Ltd. Multilayered magnetic films and thin-film magnetic heads using the same as a pole
US5287237A (en) * 1990-03-16 1994-02-15 Hitachi, Ltd. Antiferromagnetic film superior in corrosion resistance, magnetoresistance-effect element and magnetoresistance-effect head including such thin film
US5206590A (en) * 1990-12-11 1993-04-27 International Business Machines Corporation Magnetoresistive sensor based on the spin valve effect
US5408377A (en) * 1993-10-15 1995-04-18 International Business Machines Corporation Magnetoresistive sensor with improved ferromagnetic sensing layer and magnetic recording system using the sensor
US5465185A (en) * 1993-10-15 1995-11-07 International Business Machines Corporation Magnetoresistive spin valve sensor with improved pinned ferromagnetic layer and magnetic recording system using the sensor
US5650958A (en) * 1996-03-18 1997-07-22 International Business Machines Corporation Magnetic tunnel junctions with controlled magnetic response
US5958576A (en) * 1996-09-13 1999-09-28 Sony Corporation Magnetoresistance effect device and magnetic head
US5966012A (en) * 1997-10-07 1999-10-12 International Business Machines Corporation Magnetic tunnel junction device with improved fixed and free ferromagnetic layers
US6197439B1 (en) * 1999-01-28 2001-03-06 International Business Machines Corporation Laminated magnetic structures with ultra-thin transition metal spacer layers
US6153320A (en) * 1999-05-05 2000-11-28 International Business Machines Corporation Magnetic devices with laminated ferromagnetic structures formed with improved antiferromagnetically coupling films
EP1302931A1 (en) * 1999-06-08 2003-04-16 Fujitsu Limited Magnetic recording medium
JP3476741B2 (ja) 1999-06-08 2003-12-10 富士通株式会社 磁気記録媒体及び磁気記憶装置
US6773834B2 (en) * 1999-10-08 2004-08-10 Hitachi Global Storage Technologies Netherlands B.V. Laminated magnetic recording media with antiferromagnetically coupled layer as one of the individual magnetic layers in the laminate
US6280813B1 (en) * 1999-10-08 2001-08-28 International Business Machines Corporation Magnetic recording media with antiferromagnetically coupled ferromagnetic films as the recording layer
JP2002117508A (ja) * 2000-10-06 2002-04-19 Hitachi Ltd 磁気ヘッドおよびその製造方法
US6737172B1 (en) * 2000-12-07 2004-05-18 Seagate Technology Llc Multi-layered anti-ferromagnetically coupled magnetic media
US6689497B1 (en) * 2001-01-08 2004-02-10 Seagate Technology Llc Stabilized AFC magnetic recording media with reduced lattice mismatch between spacer layer(s) and magnetic layers
JP2002299723A (ja) * 2001-03-28 2002-10-11 Alps Electric Co Ltd 磁気抵抗効果素子及びこの磁気抵抗効果素子を用いた薄膜磁気ヘッド
WO2003049086A1 (en) * 2001-11-30 2003-06-12 Seagate Technology Llc Anti-ferromagnetically coupled perpendicular magnetic recording media
JP2003168834A (ja) * 2001-11-30 2003-06-13 Sony Corp 磁気抵抗効果素子およびその製造方法並びに磁気メモリ装置
US6723450B2 (en) * 2002-03-19 2004-04-20 Hitachi Global Storage Technologies Netherlands B.V. Magnetic recording medium with antiparallel coupled ferromagnetic films as the recording layer
US6801415B2 (en) * 2002-08-30 2004-10-05 Freescale Semiconductor, Inc. Nanocrystalline layers for improved MRAM tunnel junctions

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