JP2001237472A5 - - Google Patents

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JP2001237472A5
JP2001237472A5 JP2000182152A JP2000182152A JP2001237472A5 JP 2001237472 A5 JP2001237472 A5 JP 2001237472A5 JP 2000182152 A JP2000182152 A JP 2000182152A JP 2000182152 A JP2000182152 A JP 2000182152A JP 2001237472 A5 JP2001237472 A5 JP 2001237472A5
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film
ferromagnetic film
element according
ferromagnetic
magnetoresistive effect
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JP3589346B2 (ja
JP2001237472A (ja
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JP2000182152A 1999-06-17 2000-06-16 磁気抵抗効果素子および磁気抵抗効果記憶素子 Expired - Lifetime JP3589346B2 (ja)

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JP2000182152A JP3589346B2 (ja) 1999-06-17 2000-06-16 磁気抵抗効果素子および磁気抵抗効果記憶素子

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JP17048699 1999-06-17
JP35296299 1999-12-13
JP11-352962 1999-12-13
JP11-170486 1999-12-13
JP2000182152A JP3589346B2 (ja) 1999-06-17 2000-06-16 磁気抵抗効果素子および磁気抵抗効果記憶素子

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JP2003402316A Division JP2004179667A (ja) 1999-06-17 2003-12-01 磁気抵抗効果素子および磁気抵抗効果記憶素子およびデジタル信号を記憶させる方法

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JP2001237472A JP2001237472A (ja) 2001-08-31
JP2001237472A5 true JP2001237472A5 (enExample) 2004-11-11
JP3589346B2 JP3589346B2 (ja) 2004-11-17

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JP2003402316A Withdrawn JP2004179667A (ja) 1999-06-17 2003-12-01 磁気抵抗効果素子および磁気抵抗効果記憶素子およびデジタル信号を記憶させる方法

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US (2) US6436526B1 (enExample)
EP (1) EP1061592A3 (enExample)
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KR (2) KR100436318B1 (enExample)

Families Citing this family (203)

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