CN102057487B - 具有多个钉扎方向的双轴磁场传感器及其生产方法 - Google Patents

具有多个钉扎方向的双轴磁场传感器及其生产方法 Download PDF

Info

Publication number
CN102057487B
CN102057487B CN200980121423.6A CN200980121423A CN102057487B CN 102057487 B CN102057487 B CN 102057487B CN 200980121423 A CN200980121423 A CN 200980121423A CN 102057487 B CN102057487 B CN 102057487B
Authority
CN
China
Prior art keywords
layer
magnetization
stack
electrode
sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN200980121423.6A
Other languages
English (en)
Chinese (zh)
Other versions
CN102057487A (zh
Inventor
B·恩格尔
P·马瑟
J·斯劳特
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Everspin Technologies Inc
Original Assignee
Everspin Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Everspin Technologies Inc filed Critical Everspin Technologies Inc
Publication of CN102057487A publication Critical patent/CN102057487A/zh
Application granted granted Critical
Publication of CN102057487B publication Critical patent/CN102057487B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
    • H01F10/3272—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn by use of anti-parallel coupled [APC] ferromagnetic layers, e.g. artificial ferrimagnets [AFI], artificial [AAF] or synthetic [SAF] anti-ferromagnets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/30—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE]
    • H01F41/302—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F41/308—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices lift-off processes, e.g. ion milling, for trimming or patterning
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N59/00—Integrated devices, or assemblies of multiple devices, comprising at least one galvanomagnetic or Hall-effect element covered by groups H10N50/00 - H10N52/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/30—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE]
    • H01F41/302—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F41/303—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices with exchange coupling adjustment of magnetic film pairs, e.g. interface modifications by reduction, oxidation
    • H01F41/304—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices with exchange coupling adjustment of magnetic film pairs, e.g. interface modifications by reduction, oxidation using temporary decoupling, e.g. involving blocking, Néel or Curie temperature transitions by heat treatment in presence/absence of a magnetic field

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Hall/Mr Elements (AREA)
  • Measuring Magnetic Variables (AREA)
CN200980121423.6A 2008-05-08 2009-05-08 具有多个钉扎方向的双轴磁场传感器及其生产方法 Active CN102057487B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/117,396 2008-05-08
US12/117,396 US7965077B2 (en) 2008-05-08 2008-05-08 Two-axis magnetic field sensor with multiple pinning directions
PCT/US2009/043354 WO2009137802A1 (en) 2008-05-08 2009-05-08 Two-axis magnetic field sensor with multiple pinning directions and method to produce the sensor

Publications (2)

Publication Number Publication Date
CN102057487A CN102057487A (zh) 2011-05-11
CN102057487B true CN102057487B (zh) 2012-12-05

Family

ID=40852562

Family Applications (1)

Application Number Title Priority Date Filing Date
CN200980121423.6A Active CN102057487B (zh) 2008-05-08 2009-05-08 具有多个钉扎方向的双轴磁场传感器及其生产方法

Country Status (5)

Country Link
US (2) US7965077B2 (enExample)
JP (1) JP2011523506A (enExample)
CN (1) CN102057487B (enExample)
DE (1) DE112009001140T5 (enExample)
WO (1) WO2009137802A1 (enExample)

Families Citing this family (60)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8242776B2 (en) * 2008-03-26 2012-08-14 Everspin Technologies, Inc. Magnetic sensor design for suppression of barkhausen noise
US8269486B2 (en) 2008-11-12 2012-09-18 Infineon Technologies Ag Magnetic sensor system and method
US8257596B2 (en) * 2009-04-30 2012-09-04 Everspin Technologies, Inc. Two-axis magnetic field sensor with substantially orthogonal pinning directions
WO2010143718A1 (ja) 2009-06-12 2010-12-16 アルプス・グリーンデバイス株式会社 磁気平衡式電流センサ
WO2011007767A1 (ja) * 2009-07-13 2011-01-20 日立金属株式会社 磁気抵抗効果素子の製造方法、磁気センサ、回転角度検出装置
US8284594B2 (en) * 2009-09-03 2012-10-09 International Business Machines Corporation Magnetic devices and structures
US8390283B2 (en) 2009-09-25 2013-03-05 Everspin Technologies, Inc. Three axis magnetic field sensor
FR2954512B1 (fr) * 2009-12-21 2012-05-25 Commissariat Energie Atomique Realisation d'un dispositif a structures magnetiques formees sur un meme substrat et ayant des orientations d'aimantation respectives differentes
WO2011111648A1 (ja) 2010-03-12 2011-09-15 アルプス電気株式会社 磁気センサ及びそれを用いた磁気平衡式電流センサ
WO2011111493A1 (ja) * 2010-03-12 2011-09-15 アルプス・グリーンデバイス株式会社 電流センサ
US8518734B2 (en) 2010-03-31 2013-08-27 Everspin Technologies, Inc. Process integration of a single chip three axis magnetic field sensor
CN103069282B (zh) 2010-08-23 2015-06-03 阿尔卑斯绿色器件株式会社 磁平衡式电流传感器
US8508221B2 (en) 2010-08-30 2013-08-13 Everspin Technologies, Inc. Two-axis magnetic field sensor having reduced compensation angle for zero offset
DE102010055754A1 (de) * 2010-12-22 2012-06-28 Sensitec Gmbh Magnetoresistives Sensorelement
CN102280574B (zh) * 2011-01-07 2014-04-16 江苏多维科技有限公司 薄膜磁电阻传感元件、多个传感元件的组合及与该组合耦合的电子装置
US8890266B2 (en) 2011-01-31 2014-11-18 Everspin Technologies, Inc. Fabrication process and layout for magnetic sensor arrays
CN102226835A (zh) * 2011-04-06 2011-10-26 江苏多维科技有限公司 单一芯片双轴磁场传感器及其制备方法
CN102226836A (zh) * 2011-04-06 2011-10-26 江苏多维科技有限公司 单一芯片桥式磁场传感器及其制备方法
CN102621504B (zh) * 2011-04-21 2013-09-04 江苏多维科技有限公司 单片参考全桥磁场传感器
US9024632B2 (en) * 2011-05-30 2015-05-05 Denso Corporation Magnetic sensor with a plurality of heater portions to fix the direction of magnetization of a pinned magnetic layer
CN102385043B (zh) * 2011-08-30 2013-08-21 江苏多维科技有限公司 Mtj三轴磁场传感器及其封装方法
CN102426344B (zh) 2011-08-30 2013-08-21 江苏多维科技有限公司 三轴磁场传感器
US8975891B2 (en) 2011-11-04 2015-03-10 Honeywell International Inc. Apparatus and method for determining in-plane magnetic field components of a magnetic field using a single magnetoresistive sensor
TWI431301B (zh) * 2012-03-05 2014-03-21 Ind Tech Res Inst 應用穿隧式磁電阻器之磁場感測方法及磁場感測裝置
US20130241542A1 (en) 2012-03-14 2013-09-19 Wolfgang Raberg Xmr monocell sensors, systems and methods
US8786987B2 (en) * 2012-04-27 2014-07-22 Seagate Technology Llc Biased two dimensional magnetic sensor
CN102722932A (zh) * 2012-06-19 2012-10-10 兰州大学 一种验钞机磁头
US20140028307A1 (en) * 2012-07-26 2014-01-30 Udo Ausserlechner Magnetoresistive sensor systems and methods having a yaw angle between premagnetization and magnetic field directions
US20150069555A1 (en) * 2013-09-09 2015-03-12 Shintaro SAKAI Magnetic memory
JP6304989B2 (ja) * 2013-09-24 2018-04-04 株式会社東芝 圧力センサ、マイクロフォン、血圧センサ、タッチパネル、圧力センサの製造方法、および圧力センサの製造装置
US9618589B2 (en) * 2013-10-18 2017-04-11 Infineon Technologies Ag First and second magneto-resistive sensors formed by first and second sections of a layer stack
CN103592608B (zh) * 2013-10-21 2015-12-23 江苏多维科技有限公司 一种用于高强度磁场的推挽桥式磁传感器
US8953284B1 (en) * 2013-11-20 2015-02-10 HGST Netherlands B.V. Multi-read sensor having a narrow read gap structure
FR3020497B1 (fr) 2014-04-28 2016-05-13 Commissariat Energie Atomique Aimant permanent comportant un empilement de couches ferromagnetiques et antiferromagnetiques
US9449622B2 (en) 2014-10-29 2016-09-20 International Business Machines Corporation Differing magnetic read sensors on a magnetic head
US9299369B1 (en) 2014-10-29 2016-03-29 International Business Machines Corporation Multichannel data storage apparatus having abrasion resistant barrier
US9418683B2 (en) 2014-10-29 2016-08-16 International Business Machines Corporation Mass production of multichannel current perpendicular to plane head modules via preferred milling
DE102014116953B4 (de) 2014-11-19 2022-06-30 Sensitec Gmbh Verfahren und Vorrichtung zur Herstellung einer Magnetfeldsensorvorrichtung, sowie diesbezüglicheMagnetfeldsensorvorrichtung
CN104677266B (zh) * 2015-01-20 2017-11-10 江苏多维科技有限公司 强磁场误差校准的磁电阻角度传感器及其校准方法
EP3104187A1 (en) * 2015-06-09 2016-12-14 International Iberian Nanotechnology Laboratory Magnetoresistive sensor
US9897667B2 (en) 2016-01-26 2018-02-20 Nxp Usa, Inc. Magnetic field sensor with permanent magnet biasing
US9739842B2 (en) 2016-01-26 2017-08-22 Nxp Usa, Inc. Magnetic field sensor with skewed sense magnetization of sense layer
US9841469B2 (en) 2016-01-26 2017-12-12 Nxp Usa, Inc. Magnetic field sensor with multiple sense layer magnetization orientations
US10545196B2 (en) * 2016-03-24 2020-01-28 Nxp Usa, Inc. Multiple axis magnetic sensor
FR3050068B1 (fr) 2016-04-06 2018-05-18 Commissariat A L'energie Atomique Et Aux Energies Alternatives Aimant permanent comprenant un empilement de n motifs
US10145907B2 (en) 2016-04-07 2018-12-04 Nxp Usa, Inc. Magnetic field sensor with permanent magnet biasing
US9933496B2 (en) 2016-04-21 2018-04-03 Nxp Usa, Inc. Magnetic field sensor with multiple axis sense capability
WO2018106665A1 (en) * 2016-12-06 2018-06-14 Everspin Technologies, Inc. Magnetoresistive devices and methods therefor
US10663537B2 (en) * 2017-04-07 2020-05-26 Crocus Technology Sa Magnetic sensor cell for measuring one- and two-dimensional magnetic fields and method for measuring said magnetic fields using the magnetic sensor cell
JP6510100B2 (ja) * 2018-02-28 2019-05-08 株式会社東芝 圧力センサ、マイクロフォン、血圧センサ、タッチパネル
WO2019242175A1 (en) * 2018-06-22 2019-12-26 Zhenghong Qian A three-axis magnetic sensor
JP7106103B2 (ja) * 2018-07-02 2022-07-26 国立大学法人東北大学 磁気センサ装置およびその製造方法
JP6881413B2 (ja) * 2018-10-15 2021-06-02 Tdk株式会社 磁気センサ
US11415645B2 (en) * 2019-08-23 2022-08-16 Western Digital Technologies, Inc. Magnetic sensor array with one TMR stack having two free layers
US11513175B2 (en) * 2020-02-11 2022-11-29 Globalfoundries Singapore Pte. Ltd. Tunnel magnetoresistance sensor devices and methods of forming the same
DE102021202924A1 (de) 2021-03-25 2022-09-29 Robert Bosch Gesellschaft mit beschränkter Haftung Verfahren für ein lokales Modifizieren einer Schichteigenschaft, Verfahren zum Herstellen einer magnetoresistiven Sensoreinrichtung und magnetoresistive Sensoreinrichtung
JP7735068B2 (ja) * 2021-03-31 2025-09-08 本田技研工業株式会社 薄膜センサ
CN116106801B (zh) * 2023-04-14 2023-06-20 珠海多创科技有限公司 磁阻传感器、磁传感装置及其制备方法
CN116930833B (zh) * 2023-09-18 2024-01-12 江苏多维科技有限公司 磁传感器及其制备方法
US12517197B2 (en) 2024-01-18 2026-01-06 Allegro Microsystems, Llc Analog magnetic sensor device for measuring the orientation of an external magnetic field

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1171606A (zh) * 1996-07-18 1998-01-28 三洋电机株式会社 磁阻薄膜
CN1191317A (zh) * 1997-02-19 1998-08-26 日本电气株式会社 铁磁体传感器
CN2591723Y (zh) * 2002-12-24 2003-12-10 中国科学院物理研究所 具有叠层铁磁层的钉扎薄膜

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69723960T2 (de) * 1997-05-09 2004-07-22 Tesa Sa Magnetoresistiver Sensor für Dimensionsbestimmung
US5919580A (en) * 1997-05-22 1999-07-06 University Of Alabama Spin valve device containing a Cr-rich antiferromagnetic pinning layer
US6324029B1 (en) 1998-06-29 2001-11-27 International Business Machines Corporation Method and system for GMR sensor reset pulse application
CA2426666A1 (en) * 2000-09-29 2002-04-04 Solvay Pharmaceuticals B.V. Ion-strength independent sustained release pharmaceutical formulation
JP4085859B2 (ja) * 2002-03-27 2008-05-14 ヤマハ株式会社 磁気センサおよびその製造方法
US7172904B2 (en) 2002-07-31 2007-02-06 Freescale Semiconductor, Inc. High sensitivity sensor for tagged magnetic bead bioassays
JP4016857B2 (ja) 2002-10-18 2007-12-05 ヤマハ株式会社 磁気センサ及びその製造方法
US7054114B2 (en) * 2002-11-15 2006-05-30 Nve Corporation Two-axis magnetic field sensor
US7016163B2 (en) * 2003-02-20 2006-03-21 Honeywell International Inc. Magnetic field sensor
US6946697B2 (en) 2003-12-18 2005-09-20 Freescale Semiconductor, Inc. Synthetic antiferromagnet structures for use in MTJs in MRAM technology
JP4557134B2 (ja) * 2004-03-12 2010-10-06 ヤマハ株式会社 磁気センサの製造方法、同磁気センサの製造方法に使用されるマグネットアレイ及び同マグネットアレイの製造方法
US7196875B2 (en) 2004-03-24 2007-03-27 Honeywell International Inc. Permalloy sensor having individual permalloy resist pattern runners with lengths perpendicular to a wafer level anisotropy
US7474094B2 (en) * 2004-08-31 2009-01-06 International Business Machines Corporation Reorientation of magnetic layers and structures having reoriented magnetic layers
US7541804B2 (en) 2005-07-29 2009-06-02 Everspin Technologies, Inc. Magnetic tunnel junction sensor
US8283184B2 (en) 2005-09-21 2012-10-09 Siemens Aktiengesellschaft Method for measurement of very small local magnetic fields, in particular for measurement of local magnetic stray fields produced by magnetic beads, and an associated device for carrying out the method
US7547480B2 (en) 2005-10-28 2009-06-16 Everspin Technologies, Inc. Magnetic tunnel junction pressure sensors and methods
JP4739963B2 (ja) * 2006-01-18 2011-08-03 アルプス電気株式会社 車載用ｇｍｒ角度センサ
US7280389B2 (en) 2006-02-08 2007-10-09 Magic Technologies, Inc. Synthetic anti-ferromagnetic structure with non-magnetic spacer for MRAM applications
JP4921897B2 (ja) * 2006-09-05 2012-04-25 株式会社東芝 磁気センサー
US7961440B2 (en) * 2007-09-27 2011-06-14 Hitachi Global Storage Technologies Netherlands B.V. Current perpendicular to plane magnetoresistive sensor with reduced read gap

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1171606A (zh) * 1996-07-18 1998-01-28 三洋电机株式会社 磁阻薄膜
CN1191317A (zh) * 1997-02-19 1998-08-26 日本电气株式会社 铁磁体传感器
CN2591723Y (zh) * 2002-12-24 2003-12-10 中国科学院物理研究所 具有叠层铁磁层的钉扎薄膜

Also Published As

Publication number Publication date
US20090279212A1 (en) 2009-11-12
DE112009001140T5 (de) 2011-06-09
US8237437B2 (en) 2012-08-07
WO2009137802A1 (en) 2009-11-12
US7965077B2 (en) 2011-06-21
US20110121826A1 (en) 2011-05-26
JP2011523506A (ja) 2011-08-11
CN102057487A (zh) 2011-05-11

Similar Documents

Publication Publication Date Title
CN102057487A (zh) 具有多个钉扎方向的双轴磁场传感器及其生产方法
EP2612323B1 (en) Two-axis magnetic field sensor having reduced compensation angle for zero offset
US8257596B2 (en) Two-axis magnetic field sensor with substantially orthogonal pinning directions
EP4012708B1 (en) Layout for magnetic sensor arrays
KR100627212B1 (ko) 자기 센서를 제조하기 위한 방법, 그 방법에 이용되는 자석어레이, 및 자석 어레이를 제조하기 위한 방법
EP2696210A2 (en) Single-chip two-axis bridge-type magnetic field sensor
US20040041184A1 (en) MRAM sense layer area control
US20250231259A1 (en) Magnetorestistive sensor sensitive to an out-of-plane magnetic field
CN119224661A (zh) Tmr全桥磁传感器和双轴tmr全桥磁传感器

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant