JP2011523506A - 複数のピニング方向を有する２軸磁場センサおよび該センサの製造方法 - Google Patents

複数のピニング方向を有する２軸磁場センサおよび該センサの製造方法 Download PDF

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Publication number
JP2011523506A
JP2011523506A JP2011508715A JP2011508715A JP2011523506A JP 2011523506 A JP2011523506 A JP 2011523506A JP 2011508715 A JP2011508715 A JP 2011508715A JP 2011508715 A JP2011508715 A JP 2011508715A JP 2011523506 A JP2011523506 A JP 2011523506A
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layer
magnetization
electrode
magnetic field
electrode stack
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Japanese (ja)
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JP2011523506A5 (enExample
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エンゲル、ブラッドレー
メイザー、フィリップ
スローター、ジョン
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Everspin Technologies Inc
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Everspin Technologies Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
    • H01F10/3272—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn by use of anti-parallel coupled [APC] ferromagnetic layers, e.g. artificial ferrimagnets [AFI], artificial [AAF] or synthetic [SAF] anti-ferromagnets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/30—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE]
    • H01F41/302—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F41/308—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices lift-off processes, e.g. ion milling, for trimming or patterning
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N59/00—Integrated devices, or assemblies of multiple devices, comprising at least one galvanomagnetic or Hall-effect element covered by groups H10N50/00 - H10N52/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/30—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE]
    • H01F41/302—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F41/303—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices with exchange coupling adjustment of magnetic film pairs, e.g. interface modifications by reduction, oxidation
    • H01F41/304—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices with exchange coupling adjustment of magnetic film pairs, e.g. interface modifications by reduction, oxidation using temporary decoupling, e.g. involving blocking, Néel or Curie temperature transitions by heat treatment in presence/absence of a magnetic field

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Hall/Mr Elements (AREA)
  • Measuring Magnetic Variables (AREA)
JP2011508715A 2008-05-08 2009-05-08 複数のピニング方向を有する２軸磁場センサおよび該センサの製造方法 Pending JP2011523506A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/117,396 US7965077B2 (en) 2008-05-08 2008-05-08 Two-axis magnetic field sensor with multiple pinning directions
US12/117,396 2008-05-08
PCT/US2009/043354 WO2009137802A1 (en) 2008-05-08 2009-05-08 Two-axis magnetic field sensor with multiple pinning directions and method to produce the sensor

Publications (2)

Publication Number Publication Date
JP2011523506A true JP2011523506A (ja) 2011-08-11
JP2011523506A5 JP2011523506A5 (enExample) 2012-06-07

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JP2011508715A Pending JP2011523506A (ja) 2008-05-08 2009-05-08 複数のピニング方向を有する２軸磁場センサおよび該センサの製造方法

Country Status (5)

Country Link
US (2) US7965077B2 (enExample)
JP (1) JP2011523506A (enExample)
CN (1) CN102057487B (enExample)
DE (1) DE112009001140T5 (enExample)
WO (1) WO2009137802A1 (enExample)

Cited By (6)

* Cited by examiner, † Cited by third party
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JP2014515470A (ja) * 2011-04-06 2014-06-30 ジャンス マルチディメンショナル テクノロジー シーオー．， エルティーディー シングルチップ２軸ブリッジ型磁界センサ
JP2015064255A (ja) * 2013-09-24 2015-04-09 株式会社東芝 圧力センサ、マイクロフォン、血圧センサ、タッチパネル、圧力センサの製造方法、および圧力センサの製造装置
JP2016535845A (ja) * 2013-10-21 2016-11-17 江▲蘇▼多▲維▼科技有限公司Ｍｕｌｔｉｄｉｍｅｎｓｉｏｎ Ｔｅｃｈｎｏｌｏｇｙ Ｃｏ．， Ｌｔｄ． 高強度磁界用のプッシュプルブリッジ型磁気センサ
JP2018087827A (ja) * 2018-02-28 2018-06-07 株式会社東芝 圧力センサ、マイクロフォン、血圧センサ、タッチパネル
JP2020008285A (ja) * 2018-07-02 2020-01-16 株式会社デンソー 磁気センサ装置およびその製造方法
JP2022157555A (ja) * 2021-03-31 2022-10-14 本田技研工業株式会社 薄膜センサ

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US8269486B2 (en) * 2008-11-12 2012-09-18 Infineon Technologies Ag Magnetic sensor system and method
US8257596B2 (en) * 2009-04-30 2012-09-04 Everspin Technologies, Inc. Two-axis magnetic field sensor with substantially orthogonal pinning directions
JP5250109B2 (ja) 2009-06-12 2013-07-31 アルプス・グリーンデバイス株式会社 磁気平衡式電流センサ
US8779764B2 (en) * 2009-07-13 2014-07-15 Hitachi Metals, Ltd. Method for producing magnetoresistive effect element, magnetic sensor, rotation-angle detection device
US8284594B2 (en) 2009-09-03 2012-10-09 International Business Machines Corporation Magnetic devices and structures
US8390283B2 (en) 2009-09-25 2013-03-05 Everspin Technologies, Inc. Three axis magnetic field sensor
FR2954512B1 (fr) * 2009-12-21 2012-05-25 Commissariat Energie Atomique Realisation d'un dispositif a structures magnetiques formees sur un meme substrat et ayant des orientations d'aimantation respectives differentes
WO2011111493A1 (ja) * 2010-03-12 2011-09-15 アルプス・グリーンデバイス株式会社 電流センサ
WO2011111648A1 (ja) 2010-03-12 2011-09-15 アルプス電気株式会社 磁気センサ及びそれを用いた磁気平衡式電流センサ
US8518734B2 (en) 2010-03-31 2013-08-27 Everspin Technologies, Inc. Process integration of a single chip three axis magnetic field sensor
WO2012026255A1 (ja) 2010-08-23 2012-03-01 アルプス・グリーンデバイス株式会社 磁気平衡式電流センサ
US8508221B2 (en) * 2010-08-30 2013-08-13 Everspin Technologies, Inc. Two-axis magnetic field sensor having reduced compensation angle for zero offset
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CN110050355B (zh) * 2016-12-06 2023-06-23 艾沃思宾技术公司 磁阻设备及其方法
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Cited By (8)

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Publication number Priority date Publication date Assignee Title
JP2014515470A (ja) * 2011-04-06 2014-06-30 ジャンス マルチディメンショナル テクノロジー シーオー．， エルティーディー シングルチップ２軸ブリッジ型磁界センサ
JP2015064255A (ja) * 2013-09-24 2015-04-09 株式会社東芝 圧力センサ、マイクロフォン、血圧センサ、タッチパネル、圧力センサの製造方法、および圧力センサの製造装置
JP2016535845A (ja) * 2013-10-21 2016-11-17 江▲蘇▼多▲維▼科技有限公司Ｍｕｌｔｉｄｉｍｅｎｓｉｏｎ Ｔｅｃｈｎｏｌｏｇｙ Ｃｏ．， Ｌｔｄ． 高強度磁界用のプッシュプルブリッジ型磁気センサ
JP2018087827A (ja) * 2018-02-28 2018-06-07 株式会社東芝 圧力センサ、マイクロフォン、血圧センサ、タッチパネル
JP2020008285A (ja) * 2018-07-02 2020-01-16 株式会社デンソー 磁気センサ装置およびその製造方法
JP7106103B2 (ja) 2018-07-02 2022-07-26 国立大学法人東北大学 磁気センサ装置およびその製造方法
JP2022157555A (ja) * 2021-03-31 2022-10-14 本田技研工業株式会社 薄膜センサ
JP7735068B2 (ja) 2021-03-31 2025-09-08 本田技研工業株式会社 薄膜センサ

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US20090279212A1 (en) 2009-11-12
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