JP2011129930A5 - - Google Patents
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- Publication number
- JP2011129930A5 JP2011129930A5 JP2010283142A JP2010283142A JP2011129930A5 JP 2011129930 A5 JP2011129930 A5 JP 2011129930A5 JP 2010283142 A JP2010283142 A JP 2010283142A JP 2010283142 A JP2010283142 A JP 2010283142A JP 2011129930 A5 JP2011129930 A5 JP 2011129930A5
- Authority
- JP
- Japan
- Prior art keywords
- block
- magnetic field
- main direction
- blocks
- projection
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 230000005291 magnetic effect Effects 0.000 claims 13
- 238000000034 method Methods 0.000 claims 10
- 238000000137 annealing Methods 0.000 claims 4
- 239000002885 antiferromagnetic material Substances 0.000 claims 2
- 230000005415 magnetization Effects 0.000 claims 2
- 238000004519 manufacturing process Methods 0.000 claims 2
- 230000005290 antiferromagnetic effect Effects 0.000 claims 1
- 230000000903 blocking effect Effects 0.000 claims 1
- 230000005294 ferromagnetic effect Effects 0.000 claims 1
- 239000003302 ferromagnetic material Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR0959312A FR2954512B1 (fr) | 2009-12-21 | 2009-12-21 | Realisation d'un dispositif a structures magnetiques formees sur un meme substrat et ayant des orientations d'aimantation respectives differentes |
| FR0959312 | 2009-12-21 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2011129930A JP2011129930A (ja) | 2011-06-30 |
| JP2011129930A5 true JP2011129930A5 (enExample) | 2013-05-23 |
| JP5926486B2 JP5926486B2 (ja) | 2016-05-25 |
Family
ID=42542805
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010283142A Active JP5926486B2 (ja) | 2009-12-21 | 2010-12-20 | 同一の基板上に形成されそれぞれの異なる磁化の向きを有する磁気構造を備えるデバイスの製造 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US8048686B2 (enExample) |
| EP (1) | EP2341358B1 (enExample) |
| JP (1) | JP5926486B2 (enExample) |
| CN (1) | CN102183793A (enExample) |
| FR (1) | FR2954512B1 (enExample) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2983339B1 (fr) * | 2011-11-25 | 2014-01-10 | Commissariat Energie Atomique | Procede de realisation d'un dispositif comportant plusieurs blocs magnetiques aimantes selon des directions differentes |
| TWI452319B (zh) | 2012-01-09 | 2014-09-11 | Voltafield Technology Corp | 磁阻感測元件 |
| FR3020497B1 (fr) | 2014-04-28 | 2016-05-13 | Commissariat Energie Atomique | Aimant permanent comportant un empilement de couches ferromagnetiques et antiferromagnetiques |
| DE102014116953B4 (de) * | 2014-11-19 | 2022-06-30 | Sensitec Gmbh | Verfahren und Vorrichtung zur Herstellung einer Magnetfeldsensorvorrichtung, sowie diesbezüglicheMagnetfeldsensorvorrichtung |
| FR3050068B1 (fr) | 2016-04-06 | 2018-05-18 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Aimant permanent comprenant un empilement de n motifs |
| FR3054364B1 (fr) * | 2016-07-20 | 2018-08-17 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Aimant permanent comprenant un empilement de n motifs |
| US10768246B2 (en) | 2017-09-21 | 2020-09-08 | Tdk Corporation | Magnetic sensor with elongated soft magnetic body |
| FR3073284B1 (fr) | 2017-11-08 | 2020-11-13 | Commissariat Energie Atomique | Capteur de gradient de champ magnetique a sensibilite aux vibrations reduite |
| FR3073661B1 (fr) | 2017-11-10 | 2019-11-22 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Aimant permanent comprenant une couche antiferromagnetique et une couche ferromagnetique |
| CN111965571B (zh) * | 2020-07-29 | 2022-11-11 | 珠海多创科技有限公司 | 一种gmr磁场传感器的制备方法 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2970455B2 (ja) * | 1994-03-14 | 1999-11-02 | 株式会社デンソー | 磁気抵抗素子の製造方法およびその磁場処理装置 |
| US5818227A (en) * | 1996-02-22 | 1998-10-06 | Analog Devices, Inc. | Rotatable micromachined device for sensing magnetic fields |
| JP3219713B2 (ja) * | 1997-02-07 | 2001-10-15 | アルプス電気株式会社 | 磁気抵抗効果素子の製造方法 |
| JP2000058321A (ja) * | 1998-08-12 | 2000-02-25 | Fujitsu Ltd | 磁化方向制御膜の製造方法及び磁気センサの製造方法 |
| JP3575672B2 (ja) * | 1999-05-26 | 2004-10-13 | Ｔｄｋ株式会社 | 磁気抵抗効果膜及び磁気抵抗効果素子 |
| US6396671B1 (en) * | 2000-03-15 | 2002-05-28 | Headway Technologies, Inc. | Ruthenium bias compensation layer for spin valve head and process of manufacturing |
| JP3839697B2 (ja) * | 2001-10-17 | 2006-11-01 | アルプス電気株式会社 | 回転角度センサ |
| US7054114B2 (en) * | 2002-11-15 | 2006-05-30 | Nve Corporation | Two-axis magnetic field sensor |
| US7083988B2 (en) * | 2004-01-26 | 2006-08-01 | Micron Technology, Inc. | Magnetic annealing sequences for patterned MRAM synthetic antiferromagnetic pinned layers |
| JP4541082B2 (ja) * | 2004-09-21 | 2010-09-08 | Ｎｅｃトーキン株式会社 | 薄膜磁気インピーダンス型磁界検出素子の製造方法 |
| JP2007299880A (ja) * | 2006-04-28 | 2007-11-15 | Toshiba Corp | 磁気抵抗効果素子，および磁気抵抗効果素子の製造方法 |
| JP2009216390A (ja) * | 2008-03-06 | 2009-09-24 | Ricoh Co Ltd | ３軸磁気センシング装置およびその製造方法 |
| FR2929464B1 (fr) | 2008-03-28 | 2011-09-09 | Commissariat Energie Atomique | Nano resonnateur magnetique |
| US7965077B2 (en) * | 2008-05-08 | 2011-06-21 | Everspin Technologies, Inc. | Two-axis magnetic field sensor with multiple pinning directions |
-
2009
- 2009-12-21 FR FR0959312A patent/FR2954512B1/fr not_active Expired - Fee Related
-
2010
- 2010-12-15 EP EP10195167A patent/EP2341358B1/fr active Active
- 2010-12-17 US US12/971,702 patent/US8048686B2/en active Active
- 2010-12-20 JP JP2010283142A patent/JP5926486B2/ja active Active
- 2010-12-20 CN CN201010596073.3A patent/CN102183793A/zh active Pending
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