ATE393474T1 - Magnetoelektronikinformationseinrichtung mit zusammengesetzter magnetisch freier schicht - Google Patents
Magnetoelektronikinformationseinrichtung mit zusammengesetzter magnetisch freier schichtInfo
- Publication number
- ATE393474T1 ATE393474T1 AT04775950T AT04775950T ATE393474T1 AT E393474 T1 ATE393474 T1 AT E393474T1 AT 04775950 T AT04775950 T AT 04775950T AT 04775950 T AT04775950 T AT 04775950T AT E393474 T1 ATE393474 T1 AT E393474T1
- Authority
- AT
- Austria
- Prior art keywords
- information device
- free layer
- composite magnetic
- magnetic free
- spacer layer
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
- G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Hall/Mr Elements (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Magnetic Heads (AREA)
- Semiconductor Memories (AREA)
- Magnetic Record Carriers (AREA)
- Electrochromic Elements, Electrophoresis, Or Variable Reflection Or Absorption Elements (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/437,831 US6714446B1 (en) | 2003-05-13 | 2003-05-13 | Magnetoelectronics information device having a compound magnetic free layer |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE393474T1 true ATE393474T1 (de) | 2008-05-15 |
Family
ID=31994372
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT04775950T ATE393474T1 (de) | 2003-05-13 | 2004-05-07 | Magnetoelektronikinformationseinrichtung mit zusammengesetzter magnetisch freier schicht |
Country Status (8)
Country | Link |
---|---|
US (1) | US6714446B1 (de) |
EP (1) | EP1625589B1 (de) |
JP (1) | JP5009622B2 (de) |
KR (1) | KR101062160B1 (de) |
CN (1) | CN100514487C (de) |
AT (1) | ATE393474T1 (de) |
DE (1) | DE602004013305D1 (de) |
WO (1) | WO2005006338A2 (de) |
Families Citing this family (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7095646B2 (en) * | 2002-07-17 | 2006-08-22 | Freescale Semiconductor, Inc. | Multi-state magnetoresistance random access cell with improved memory storage density |
JP4863151B2 (ja) * | 2003-06-23 | 2012-01-25 | 日本電気株式会社 | 磁気ランダム・アクセス・メモリとその製造方法 |
US8471263B2 (en) * | 2003-06-24 | 2013-06-25 | Sang-Yun Lee | Information storage system which includes a bonded semiconductor structure |
US6956763B2 (en) * | 2003-06-27 | 2005-10-18 | Freescale Semiconductor, Inc. | MRAM element and methods for writing the MRAM element |
JP4868198B2 (ja) | 2004-08-19 | 2012-02-01 | 日本電気株式会社 | 磁性メモリ |
US7129098B2 (en) * | 2004-11-24 | 2006-10-31 | Freescale Semiconductor, Inc. | Reduced power magnetoresistive random access memory elements |
US7173848B2 (en) * | 2005-02-01 | 2007-02-06 | Meglabs, Inc. | Magnetic random access memory with memory cell stacks having more than two magnetic states |
JP5077802B2 (ja) * | 2005-02-16 | 2012-11-21 | 日本電気株式会社 | 積層強磁性構造体、及び、mtj素子 |
JP4877575B2 (ja) * | 2005-05-19 | 2012-02-15 | 日本電気株式会社 | 磁気ランダムアクセスメモリ |
US7301801B2 (en) * | 2005-10-28 | 2007-11-27 | International Business Machines Corporation | Tuned pinned layers for magnetic tunnel junctions with multicomponent free layers |
US7368301B2 (en) * | 2006-01-27 | 2008-05-06 | Magic Technologies, Inc. | Magnetic random access memory with selective toggle memory cells |
US7280389B2 (en) * | 2006-02-08 | 2007-10-09 | Magic Technologies, Inc. | Synthetic anti-ferromagnetic structure with non-magnetic spacer for MRAM applications |
EP1863034B1 (de) * | 2006-05-04 | 2011-01-05 | Hitachi, Ltd. | Magnetspeichervorrichtung |
US20080205130A1 (en) * | 2007-02-28 | 2008-08-28 | Freescale Semiconductor, Inc. | Mram free layer synthetic antiferromagnet structure and methods |
US20090128966A1 (en) * | 2007-10-10 | 2009-05-21 | Krishnakumar Mani | Magnetic memory cell based on a magnetic tunnel junction(mtj) with low switching field shapes |
US20090121266A1 (en) * | 2007-11-13 | 2009-05-14 | Freescale Semiconductor, Inc. | Methods and structures for exchange-coupled magnetic multi-layer structure with improved operating temperature behavior |
US7944738B2 (en) * | 2008-11-05 | 2011-05-17 | Micron Technology, Inc. | Spin torque transfer cell structure utilizing field-induced antiferromagnetic or ferromagnetic coupling |
US20100219492A1 (en) * | 2009-02-27 | 2010-09-02 | Jannier Maximo Roiz Wilson | Low switching field low shape sensitivity mram cell |
KR101676824B1 (ko) | 2010-06-15 | 2016-11-18 | 삼성전자주식회사 | 자기 메모리 소자 |
JP2013115400A (ja) | 2011-12-01 | 2013-06-10 | Sony Corp | 記憶素子、記憶装置 |
JP2013115413A (ja) | 2011-12-01 | 2013-06-10 | Sony Corp | 記憶素子、記憶装置 |
JP2013115412A (ja) * | 2011-12-01 | 2013-06-10 | Sony Corp | 記憶素子、記憶装置 |
US9324939B2 (en) * | 2014-07-01 | 2016-04-26 | Qualcomm Incorporated | Synthetic antiferromagnet (SAF) coupled free layer for perpendicular magnetic tunnel junction (p-MTJ) |
US9659586B1 (en) | 2015-11-12 | 2017-05-23 | Seagate Technology Llc | Reader with free layer experiencing opposite phase-shifted media torques |
CN105825060B (zh) * | 2016-03-17 | 2018-05-11 | 西南交通大学 | 多层包裹纤维增强智能材料过渡层电磁效应影响计算方法 |
KR102651851B1 (ko) | 2016-12-06 | 2024-04-01 | 삼성전자주식회사 | 반도체 소자 |
CN112635651A (zh) * | 2019-10-08 | 2021-04-09 | 上海磁宇信息科技有限公司 | 磁性隧道结结构及磁性随机存储器 |
CN112652703A (zh) * | 2019-10-10 | 2021-04-13 | 上海磁宇信息科技有限公司 | 磁性隧道结结构及其磁性存储器 |
US11393495B2 (en) | 2020-03-26 | 2022-07-19 | Seagate Technology Llc | Reader with a multi-layer synthetic ferrimagnet free layer |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09270548A (ja) * | 1996-03-29 | 1997-10-14 | Sony Corp | 磁気抵抗効果素子及びこれを用いた磁気抵抗効果型磁気ヘッド |
US5953248A (en) * | 1998-07-20 | 1999-09-14 | Motorola, Inc. | Low switching field magnetic tunneling junction for high density arrays |
GB2362985B (en) * | 1998-11-20 | 2003-06-25 | Seagate Technology Llc | A magnetic recording head |
US6611405B1 (en) * | 1999-09-16 | 2003-08-26 | Kabushiki Kaisha Toshiba | Magnetoresistive element and magnetic memory device |
US6169689B1 (en) * | 1999-12-08 | 2001-01-02 | Motorola, Inc. | MTJ stacked cell memory sensing method and apparatus |
US6911710B2 (en) * | 2000-03-09 | 2005-06-28 | Hewlett-Packard Development Company, L.P. | Multi-bit magnetic memory cells |
WO2001099206A1 (fr) * | 2000-06-22 | 2001-12-27 | Matsushita Electric Industrial Co., Ltd. | Dispositif a resistance magnetique, tete a resistance magnetique comprenant ce dispositif et appareil d'enregistrement/reproduction magnetique |
US6818330B2 (en) * | 2000-08-25 | 2004-11-16 | Seagate Technology Llc | Perpendicular recording medium with antiferromagnetic exchange coupling in soft magnetic underlayers |
JP2002151758A (ja) * | 2000-11-09 | 2002-05-24 | Hitachi Ltd | 強磁性トンネル磁気抵抗効果素子、磁気メモリ及び磁気抵抗効果型ヘッド |
US6628478B2 (en) * | 2001-04-17 | 2003-09-30 | Hitachi Global Storage Technologies Netherlands B.V. | Write head with all metallic laminated pole pieces with thickness differential |
JP2002374018A (ja) * | 2001-06-15 | 2002-12-26 | Alps Electric Co Ltd | 磁気検出素子及びその製造方法 |
JP2003077107A (ja) * | 2001-09-06 | 2003-03-14 | Sony Corp | 磁気抵抗効果型磁気ヘッド |
US6545906B1 (en) * | 2001-10-16 | 2003-04-08 | Motorola, Inc. | Method of writing to scalable magnetoresistance random access memory element |
US6531723B1 (en) * | 2001-10-16 | 2003-03-11 | Motorola, Inc. | Magnetoresistance random access memory for improved scalability |
JP2003229544A (ja) * | 2002-02-04 | 2003-08-15 | Mitsubishi Electric Corp | 磁気記憶装置 |
US8531723B2 (en) | 2010-06-28 | 2013-09-10 | Konica Minolta Laboratory U.S.A., Inc. | Systems and methods for improving performance of trigonometric and distance function calculations during printing and display |
-
2003
- 2003-05-13 US US10/437,831 patent/US6714446B1/en not_active Expired - Fee Related
-
2004
- 2004-05-07 KR KR1020057021545A patent/KR101062160B1/ko not_active IP Right Cessation
- 2004-05-07 EP EP04775950A patent/EP1625589B1/de not_active Expired - Lifetime
- 2004-05-07 DE DE602004013305T patent/DE602004013305D1/de not_active Expired - Lifetime
- 2004-05-07 AT AT04775950T patent/ATE393474T1/de not_active IP Right Cessation
- 2004-05-07 CN CNB2004800108631A patent/CN100514487C/zh not_active Expired - Fee Related
- 2004-05-07 JP JP2006532843A patent/JP5009622B2/ja not_active Expired - Lifetime
- 2004-05-07 WO PCT/US2004/014252 patent/WO2005006338A2/en active Application Filing
Also Published As
Publication number | Publication date |
---|---|
US6714446B1 (en) | 2004-03-30 |
EP1625589A4 (de) | 2007-01-03 |
JP5009622B2 (ja) | 2012-08-22 |
WO2005006338A2 (en) | 2005-01-20 |
KR101062160B1 (ko) | 2011-09-05 |
CN1777957A (zh) | 2006-05-24 |
WO2005006338A3 (en) | 2005-09-09 |
KR20060009337A (ko) | 2006-01-31 |
JP2007516604A (ja) | 2007-06-21 |
EP1625589A2 (de) | 2006-02-15 |
DE602004013305D1 (de) | 2008-06-05 |
CN100514487C (zh) | 2009-07-15 |
EP1625589B1 (de) | 2008-04-23 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |