DE602004013305D1 - Magnetoelektronikinformationseinrichtung mit zusammengesetzter magnetisch freier schicht - Google Patents

Magnetoelektronikinformationseinrichtung mit zusammengesetzter magnetisch freier schicht

Info

Publication number
DE602004013305D1
DE602004013305D1 DE602004013305T DE602004013305T DE602004013305D1 DE 602004013305 D1 DE602004013305 D1 DE 602004013305D1 DE 602004013305 T DE602004013305 T DE 602004013305T DE 602004013305 T DE602004013305 T DE 602004013305T DE 602004013305 D1 DE602004013305 D1 DE 602004013305D1
Authority
DE
Germany
Prior art keywords
free layer
information equipment
compound magnetic
spacer layer
magnetoelectronic information
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE602004013305T
Other languages
English (en)
Inventor
Bradley N Engel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP USA Inc
Original Assignee
Freescale Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Freescale Semiconductor Inc filed Critical Freescale Semiconductor Inc
Publication of DE602004013305D1 publication Critical patent/DE602004013305D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
  • Magnetic Heads (AREA)
  • Semiconductor Memories (AREA)
  • Magnetic Record Carriers (AREA)
  • Electrochromic Elements, Electrophoresis, Or Variable Reflection Or Absorption Elements (AREA)
DE602004013305T 2003-05-13 2004-05-07 Magnetoelektronikinformationseinrichtung mit zusammengesetzter magnetisch freier schicht Expired - Lifetime DE602004013305D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/437,831 US6714446B1 (en) 2003-05-13 2003-05-13 Magnetoelectronics information device having a compound magnetic free layer
PCT/US2004/014252 WO2005006338A2 (en) 2003-05-13 2004-05-07 Magnetoelectronics information device having a compound magnetic free layer

Publications (1)

Publication Number Publication Date
DE602004013305D1 true DE602004013305D1 (de) 2008-06-05

Family

ID=31994372

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602004013305T Expired - Lifetime DE602004013305D1 (de) 2003-05-13 2004-05-07 Magnetoelektronikinformationseinrichtung mit zusammengesetzter magnetisch freier schicht

Country Status (8)

Country Link
US (1) US6714446B1 (de)
EP (1) EP1625589B1 (de)
JP (1) JP5009622B2 (de)
KR (1) KR101062160B1 (de)
CN (1) CN100514487C (de)
AT (1) ATE393474T1 (de)
DE (1) DE602004013305D1 (de)
WO (1) WO2005006338A2 (de)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7095646B2 (en) * 2002-07-17 2006-08-22 Freescale Semiconductor, Inc. Multi-state magnetoresistance random access cell with improved memory storage density
JP4863151B2 (ja) * 2003-06-23 2012-01-25 日本電気株式会社 磁気ランダム・アクセス・メモリとその製造方法
US8471263B2 (en) * 2003-06-24 2013-06-25 Sang-Yun Lee Information storage system which includes a bonded semiconductor structure
US6956763B2 (en) * 2003-06-27 2005-10-18 Freescale Semiconductor, Inc. MRAM element and methods for writing the MRAM element
JP4868198B2 (ja) 2004-08-19 2012-02-01 日本電気株式会社 磁性メモリ
US7129098B2 (en) * 2004-11-24 2006-10-31 Freescale Semiconductor, Inc. Reduced power magnetoresistive random access memory elements
US7173848B2 (en) * 2005-02-01 2007-02-06 Meglabs, Inc. Magnetic random access memory with memory cell stacks having more than two magnetic states
JP5077802B2 (ja) * 2005-02-16 2012-11-21 日本電気株式会社 積層強磁性構造体、及び、ｍｔｊ素子
JP4877575B2 (ja) * 2005-05-19 2012-02-15 日本電気株式会社 磁気ランダムアクセスメモリ
US7301801B2 (en) * 2005-10-28 2007-11-27 International Business Machines Corporation Tuned pinned layers for magnetic tunnel junctions with multicomponent free layers
US7368301B2 (en) * 2006-01-27 2008-05-06 Magic Technologies, Inc. Magnetic random access memory with selective toggle memory cells
US7280389B2 (en) * 2006-02-08 2007-10-09 Magic Technologies, Inc. Synthetic anti-ferromagnetic structure with non-magnetic spacer for MRAM applications
EP1863034B1 (de) * 2006-05-04 2011-01-05 Hitachi, Ltd. Magnetspeichervorrichtung
US20080205130A1 (en) * 2007-02-28 2008-08-28 Freescale Semiconductor, Inc. Mram free layer synthetic antiferromagnet structure and methods
US20090128966A1 (en) * 2007-10-10 2009-05-21 Krishnakumar Mani Magnetic memory cell based on a magnetic tunnel junction(mtj) with low switching field shapes
US20090121266A1 (en) * 2007-11-13 2009-05-14 Freescale Semiconductor, Inc. Methods and structures for exchange-coupled magnetic multi-layer structure with improved operating temperature behavior
US7944738B2 (en) 2008-11-05 2011-05-17 Micron Technology, Inc. Spin torque transfer cell structure utilizing field-induced antiferromagnetic or ferromagnetic coupling
US20100219492A1 (en) * 2009-02-27 2010-09-02 Jannier Maximo Roiz Wilson Low switching field low shape sensitivity mram cell
KR101676824B1 (ko) 2010-06-15 2016-11-18 삼성전자주식회사 자기 메모리 소자
JP2013115400A (ja) 2011-12-01 2013-06-10 Sony Corp 記憶素子、記憶装置
JP2013115413A (ja) 2011-12-01 2013-06-10 Sony Corp 記憶素子、記憶装置
JP2013115412A (ja) * 2011-12-01 2013-06-10 Sony Corp 記憶素子、記憶装置
US9324939B2 (en) 2014-07-01 2016-04-26 Qualcomm Incorporated Synthetic antiferromagnet (SAF) coupled free layer for perpendicular magnetic tunnel junction (p-MTJ)
US9659586B1 (en) 2015-11-12 2017-05-23 Seagate Technology Llc Reader with free layer experiencing opposite phase-shifted media torques
CN105825060B (zh) * 2016-03-17 2018-05-11 西南交通大学 多层包裹纤维增强智能材料过渡层电磁效应影响计算方法
KR102651851B1 (ko) 2016-12-06 2024-04-01 삼성전자주식회사 반도체 소자
CN112635651A (zh) * 2019-10-08 2021-04-09 上海磁宇信息科技有限公司 磁性隧道结结构及磁性随机存储器
CN112652703A (zh) * 2019-10-10 2021-04-13 上海磁宇信息科技有限公司 磁性隧道结结构及其磁性存储器
US11393495B2 (en) 2020-03-26 2022-07-19 Seagate Technology Llc Reader with a multi-layer synthetic ferrimagnet free layer

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09270548A (ja) * 1996-03-29 1997-10-14 Sony Corp 磁気抵抗効果素子及びこれを用いた磁気抵抗効果型磁気ヘッド
US5953248A (en) * 1998-07-20 1999-09-14 Motorola, Inc. Low switching field magnetic tunneling junction for high density arrays
US6556388B1 (en) * 1998-11-20 2003-04-29 Seagate Technology Llc Differential VGMR sensor
US6611405B1 (en) * 1999-09-16 2003-08-26 Kabushiki Kaisha Toshiba Magnetoresistive element and magnetic memory device
US6169689B1 (en) * 1999-12-08 2001-01-02 Motorola, Inc. MTJ stacked cell memory sensing method and apparatus
US6911710B2 (en) * 2000-03-09 2005-06-28 Hewlett-Packard Development Company, L.P. Multi-bit magnetic memory cells
EP1311008A4 (de) * 2000-06-22 2006-01-18 Matsushita Electric Ind Co Ltd Magnetwiderstandseffektbauelement und magnetwiderstandseffektkopf damit und magnetische aufzeichnungs/wiedergabevorrichtung
US6818330B2 (en) * 2000-08-25 2004-11-16 Seagate Technology Llc Perpendicular recording medium with antiferromagnetic exchange coupling in soft magnetic underlayers
JP2002151758A (ja) * 2000-11-09 2002-05-24 Hitachi Ltd 強磁性トンネル磁気抵抗効果素子、磁気メモリ及び磁気抵抗効果型ヘッド
US6628478B2 (en) * 2001-04-17 2003-09-30 Hitachi Global Storage Technologies Netherlands B.V. Write head with all metallic laminated pole pieces with thickness differential
JP2002374018A (ja) * 2001-06-15 2002-12-26 Alps Electric Co Ltd 磁気検出素子及びその製造方法
JP2003077107A (ja) * 2001-09-06 2003-03-14 Sony Corp 磁気抵抗効果型磁気ヘッド
US6531723B1 (en) * 2001-10-16 2003-03-11 Motorola, Inc. Magnetoresistance random access memory for improved scalability
US6545906B1 (en) * 2001-10-16 2003-04-08 Motorola, Inc. Method of writing to scalable magnetoresistance random access memory element
JP2003229544A (ja) * 2002-02-04 2003-08-15 Mitsubishi Electric Corp 磁気記憶装置
US8531723B2 (en) 2010-06-28 2013-09-10 Konica Minolta Laboratory U.S.A., Inc. Systems and methods for improving performance of trigonometric and distance function calculations during printing and display

Also Published As

Publication number Publication date
CN100514487C (zh) 2009-07-15
EP1625589A2 (de) 2006-02-15
EP1625589B1 (de) 2008-04-23
ATE393474T1 (de) 2008-05-15
CN1777957A (zh) 2006-05-24
JP2007516604A (ja) 2007-06-21
WO2005006338A2 (en) 2005-01-20
WO2005006338A3 (en) 2005-09-09
KR101062160B1 (ko) 2011-09-05
KR20060009337A (ko) 2006-01-31
US6714446B1 (en) 2004-03-30
JP5009622B2 (ja) 2012-08-22
EP1625589A4 (de) 2007-01-03

Similar Documents

Publication Publication Date Title
DE602004013305D1 (de) Magnetoelektronikinformationseinrichtung mit zusammengesetzter magnetisch freier schicht
TW200637051A (en) Mask, mask manufacturing method, pattern forming apparatus, and pattern formation method
DE602005006736D1 (de) Laminierte spule
WO2008050045A3 (fr) Dispositif magnetique a aimantation perpendiculaire et a couche intercalaire compensatrice d'interactions
WO2003019569A3 (en) Magneto-electronic component
WO2006105425A3 (en) Residual magnetic devices and methods
TW200629273A (en) Magnetic random access memory and fabricating method thereof
MX2010002413A (es) Inductores de alta potencia utilizando una polarizacion magnetica.
TW200606963A (en) Magnetic element
MY128786A (en) Soft magnetic film for perpendicular recording disk
TW200634864A (en) Inductor
EP1321943A3 (de) Magnetischer Speicher
TW200510947A (en) Lithographic apparatus, device manufacturing method, and device manufactured thereby
EP1473742A4 (de) Hochfrequenz-magnetdünnfilm, zusammengesetzter magnetdünnfilm und magneteinrichtung damit
SG129371A1 (en) Patterned substrate having patterns of protrusionsand recesses, method of manufacturing the same, m agnetic recoding media, and magnetic recording apparatus
WO2007089693A3 (en) Residual magnetic devices and methods
DE60113841D1 (de) Magnetisches aufzeichnungsmittel und verfahren zu seiner herstellung
NO20031073L (no) Permanentmagnet, magnetisk kjerne som bruker denne som magnetisk forspenning og induktansdel som bruker kjernen
EP1115164A3 (de) Magnetoresistive Anordnung und diese verwendendes magnetisches Speicherelement
BRPI0702182A (pt) distorção de campo reduzida em ferramentas médicas
WO2004044595A3 (en) Magnetic field sensor with augmented magnetoresistive sensing layer
WO2011156031A3 (en) Method and system for providing inverted dual magnetic tunneling junction elements
DE602005024978D1 (de) Planare hochspannungstransformatoreinrichtung
ATE514096T1 (de) Rauscharmer magnetfeldsensor
ATE503142T1 (de) Ventil mit einem elektromagnetischen antrieb

Legal Events

Date Code Title Description
8332 No legal effect for de