ATE547813T1 - Dreischichtiges magnetisches element, verfahren zu seiner herstellung, magnetfeldsensor, magnetischer speicher und magnetisches logikgatter mit einem solchen element - Google Patents

Dreischichtiges magnetisches element, verfahren zu seiner herstellung, magnetfeldsensor, magnetischer speicher und magnetisches logikgatter mit einem solchen element

Info

Publication number
ATE547813T1
ATE547813T1 AT09772700T AT09772700T ATE547813T1 AT E547813 T1 ATE547813 T1 AT E547813T1 AT 09772700 T AT09772700 T AT 09772700T AT 09772700 T AT09772700 T AT 09772700T AT E547813 T1 ATE547813 T1 AT E547813T1
Authority
AT
Austria
Prior art keywords
magnetic
layer
production
logic gate
field sensor
Prior art date
Application number
AT09772700T
Other languages
English (en)
Inventor
Bernard Rodmacq
Stephane Auffret
Bernard Dieny
Lavinia Elena Nistor
Original Assignee
Commissariat Energie Atomique
Centre Nat Rech Scient
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat Energie Atomique, Centre Nat Rech Scient filed Critical Commissariat Energie Atomique
Application granted granted Critical
Publication of ATE547813T1 publication Critical patent/ATE547813T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/098—Magnetoresistive devices comprising tunnel junctions, e.g. tunnel magnetoresistance sensors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/18—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using Hall-effect devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/3227—Exchange coupling via one or more magnetisable ultrathin or granular films
    • H01F10/3231—Exchange coupling via one or more magnetisable ultrathin or granular films via a non-magnetic spacer
    • H01F10/3236—Exchange coupling via one or more magnetisable ultrathin or granular films via a non-magnetic spacer made of a noble metal, e.g.(Co/Pt) n multilayers having perpendicular anisotropy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3286—Spin-exchange coupled multilayers having at least one layer with perpendicular magnetic anisotropy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/32—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying conductive, insulating or magnetic material on a magnetic film, specially adapted for a thin magnetic film
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • H10N52/01—Manufacture or treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/3218—Exchange coupling of magnetic films via an antiferromagnetic interface

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Thin Magnetic Films (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Measuring Magnetic Variables (AREA)
  • Magnetic Heads (AREA)
  • Burglar Alarm Systems (AREA)
  • Switches That Are Operated By Magnetic Or Electric Fields (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
AT09772700T 2008-06-09 2009-06-05 Dreischichtiges magnetisches element, verfahren zu seiner herstellung, magnetfeldsensor, magnetischer speicher und magnetisches logikgatter mit einem solchen element ATE547813T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0853811A FR2932315B1 (fr) 2008-06-09 2008-06-09 Element magnetique tricouches, procede pour sa realisation, capteur de champ magnetique, memoire magnetique et porte logique magnetique mettant en oeuvre un tel element
PCT/FR2009/051062 WO2010001018A1 (fr) 2008-06-09 2009-06-05 Element magnetique tricouches, procede pour sa realisation, capteur de champ magnetique, memoire magnetique et porte logique magnetique mettant en oeuvre un tel element

Publications (1)

Publication Number Publication Date
ATE547813T1 true ATE547813T1 (de) 2012-03-15

Family

ID=40290955

Family Applications (1)

Application Number Title Priority Date Filing Date
AT09772700T ATE547813T1 (de) 2008-06-09 2009-06-05 Dreischichtiges magnetisches element, verfahren zu seiner herstellung, magnetfeldsensor, magnetischer speicher und magnetisches logikgatter mit einem solchen element

Country Status (7)

Country Link
US (1) US8513944B2 (de)
EP (1) EP2286473B1 (de)
JP (1) JP2011525300A (de)
CN (1) CN102119455A (de)
AT (1) ATE547813T1 (de)
FR (1) FR2932315B1 (de)
WO (1) WO2010001018A1 (de)

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KR101584099B1 (ko) * 2009-08-19 2016-01-13 삼성전자주식회사 자성층을 구비한 트랙 및 이를 포함하는 자성소자
US8400066B1 (en) 2010-08-01 2013-03-19 Lawrence T. Pileggi Magnetic logic circuits and systems incorporating same
US8476925B2 (en) 2010-08-01 2013-07-02 Jian-Gang (Jimmy) Zhu Magnetic switching cells and methods of making and operating same
CN102447055A (zh) * 2010-10-09 2012-05-09 中国科学院物理研究所 一种磁性金属薄膜型霍尔器件及其制备方法
CN102810630B (zh) * 2011-05-30 2015-11-25 中国科学院物理研究所 各向异性可调制的磁性薄膜结构、磁敏传感器及制备方法
JP5750725B2 (ja) * 2011-07-21 2015-07-22 国立研究開発法人物質・材料研究機構 磁壁移動型の磁気記録素子及び磁気記録方法
KR101958940B1 (ko) * 2012-07-30 2019-07-02 삼성전자주식회사 회전 전달 기반 논리 장치들을 제공하기 위한 방법 및 시스템
US9136464B1 (en) * 2012-09-25 2015-09-15 Everspin Technologies, Inc. Apparatus and process for manufacturing ST-MRAM having a metal oxide tunnel barrier
CN103137850B (zh) * 2013-02-21 2017-05-31 中国科学院物理研究所 磁性多层膜霍尔元件及其制备方法
DE112013006526T5 (de) * 2013-03-14 2015-10-29 Intel Corporation Kreuzpunktanordnungs-MRAM mit Spin-Hall-MTJ-Vorrichtungen
US9529060B2 (en) 2014-01-09 2016-12-27 Allegro Microsystems, Llc Magnetoresistance element with improved response to magnetic fields
CN103779495A (zh) * 2014-01-22 2014-05-07 中国科学院苏州纳米技术与纳米仿生研究所 基于自旋霍尔效应的磁性元件、微波振荡器及其制法
US9293160B1 (en) 2015-02-06 2016-03-22 HGST Netherlands B.V. Magnetic stabilization and scissor design for anomalous hall effect magnetic read sensor
EP3300534B1 (de) 2015-06-05 2020-11-11 Allegro MicroSystems, LLC Magnetoresistives spinventilelement mit verbesserter empfindlichkeit gegenüber magnetfeldern
JP5985728B1 (ja) * 2015-09-15 2016-09-06 株式会社東芝 磁気メモリ
KR20180013629A (ko) * 2016-07-29 2018-02-07 에스케이하이닉스 주식회사 다층 자성 박막 스택 및 이를 포함하는 데이터 저장 장치
US10620279B2 (en) 2017-05-19 2020-04-14 Allegro Microsystems, Llc Magnetoresistance element with increased operational range
US11022661B2 (en) 2017-05-19 2021-06-01 Allegro Microsystems, Llc Magnetoresistance element with increased operational range
FR3067116B1 (fr) * 2017-06-02 2019-07-12 Commissariat A L'energie Atomique Et Aux Energies Alternatives Systeme et procede de suppression du bruit basse frequence de capteurs magneto-resistifs a magnetoresistence tunnel
FR3078434A1 (fr) 2018-02-23 2019-08-30 Commissariat A L'energie Atomique Et Aux Energies Alternatives Jonction tunnel magnetique a anisotropie de forme perpendiculaire et variation en temperature minimisee, point memoire et element logique comprenant la jonction tunnel magnetique, procede de fabrication de la jonction tunnel magnetique
FR3078443B1 (fr) 2018-02-23 2023-01-13 Commissariat Energie Atomique Jonction tunnel magnetique a anisotropie de forme perpendiculaire et variabilite minimisee, point memoire et element logique comprenant la jonction tunnel magnetique, procede de fabrication de la jonction tunnel magnetique
JP2021527964A (ja) * 2018-06-22 2021-10-14 マグアレイ，インコーポレイテッド 混合酸化物パッシベーション層を有する磁気センサ
CN111220357B (zh) * 2018-11-23 2023-04-25 中国科学院物理研究所 一种光斑均匀度探测器件及其制造方法和应用
US11719771B1 (en) 2022-06-02 2023-08-08 Allegro Microsystems, Llc Magnetoresistive sensor having seed layer hysteresis suppression
US12320870B2 (en) 2022-07-19 2025-06-03 Allegro Microsystems, Llc Controlling out-of-plane anisotropy in an MR sensor with free layer dusting
CN116106799A (zh) * 2023-01-05 2023-05-12 广西电网有限责任公司电力科学研究院 一种磁敏感薄膜材料、传感器及其制备方法
US12359904B2 (en) 2023-01-26 2025-07-15 Allegro Microsystems, Llc Method of manufacturing angle sensors including magnetoresistance elements including different types of antiferromagnetic materials
US12352832B2 (en) 2023-01-30 2025-07-08 Allegro Microsystems, Llc Reducing angle error in angle sensor due to orthogonality drift over magnetic-field
CN118330522B (zh) * 2024-03-03 2025-11-21 中南大学 Fe5GeTe2材料的应用、磁阻角度传感器及其应用

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JPH04356721A (ja) * 1991-03-28 1992-12-10 Fuji Photo Film Co Ltd 磁気記録媒体
US6650513B2 (en) * 2001-01-29 2003-11-18 International Business Machines Corporation Magnetic devices with a ferromagnetic layer having perpendicular magnetic anisotropy and an antiferromagnetic layer for perpendicularly exchange biasing the ferromagnetic layer
JP4487472B2 (ja) * 2002-07-05 2010-06-23 株式会社日立製作所 磁気抵抗効果素子、及びこれを備える磁気ヘッド、磁気記録装置、磁気メモリ
US6831312B2 (en) * 2002-08-30 2004-12-14 Freescale Semiconductor, Inc. Amorphous alloys for magnetic devices
US6920062B2 (en) * 2003-10-14 2005-07-19 International Business Machines Corporation System and method for reading data stored on a magnetic shift register
US6992359B2 (en) * 2004-02-26 2006-01-31 Grandis, Inc. Spin transfer magnetic element with free layers having high perpendicular anisotropy and in-plane equilibrium magnetization
FR2904724B1 (fr) * 2006-08-03 2011-03-04 Commissariat Energie Atomique Dispositif magnetique en couches minces a forte polarisation en spin perpendiculaire au plan des couches, jonction tunnel magnetique et vanne de spin mettant en oeuvre un tel dispositif
FR2910716B1 (fr) * 2006-12-26 2010-03-26 Commissariat Energie Atomique Dispositif magnetique multicouches, procede pour sa realisation, capteur de champ magnetique, memoire magnetique et porte logique mettant en oeuvre un tel dispositif

Also Published As

Publication number Publication date
EP2286473A1 (de) 2011-02-23
CN102119455A (zh) 2011-07-06
US8513944B2 (en) 2013-08-20
JP2011525300A (ja) 2011-09-15
FR2932315B1 (fr) 2010-06-04
US20110163743A1 (en) 2011-07-07
WO2010001018A1 (fr) 2010-01-07
FR2932315A1 (fr) 2009-12-11
EP2286473B1 (de) 2012-02-29

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