WO2008155996A1 - トンネル磁気抵抗薄膜及び磁性多層膜作製装置 - Google Patents

トンネル磁気抵抗薄膜及び磁性多層膜作製装置 Download PDF

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Publication number
WO2008155996A1
WO2008155996A1 PCT/JP2008/060419 JP2008060419W WO2008155996A1 WO 2008155996 A1 WO2008155996 A1 WO 2008155996A1 JP 2008060419 W JP2008060419 W JP 2008060419W WO 2008155996 A1 WO2008155996 A1 WO 2008155996A1
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WO
WIPO (PCT)
Prior art keywords
thin film
tunnel magnetoresistive
magnetoresistive thin
layer
formation apparatus
Prior art date
Application number
PCT/JP2008/060419
Other languages
English (en)
French (fr)
Inventor
Koji Tsunekawa
Yoshinori Nagamine
Original Assignee
Canon Anelva Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Anelva Corporation filed Critical Canon Anelva Corporation
Priority to CN2008800005864A priority Critical patent/CN101542767B/zh
Priority to EP08765232A priority patent/EP2159858A1/en
Priority to JP2009520421A priority patent/JP4551484B2/ja
Priority to US12/376,551 priority patent/US8139325B2/en
Publication of WO2008155996A1 publication Critical patent/WO2008155996A1/ja

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
    • G11B5/3909—Arrangements using a magnetic tunnel junction
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
    • H01F10/3272—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn by use of anti-parallel coupled [APC] ferromagnetic layers, e.g. artificial ferrimagnets [AFI], artificial [AAF] or synthetic [SAF] anti-ferromagnets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/30—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE]
    • H01F41/302—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Computer Hardware Design (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Thin Magnetic Films (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

　交換結合用非磁性層として用いられるＲｕ層の薄膜を維持したまま、耐熱性を改善し、高温でのアニールを経てもＲｕ層が良好に交換結合磁界を発現し、ＭＲ比の高いトンネル磁気抵抗薄膜を提供する。 　トンネル磁気抵抗薄膜において、交換結合用非磁性層５を介して積層される第一磁化固定層４及び第二磁化固定層６の少なくとも一方を、互いに異なる磁性材料からなる２層以上の積層構造とする。
PCT/JP2008/060419 2007-06-19 2008-06-06 トンネル磁気抵抗薄膜及び磁性多層膜作製装置 WO2008155996A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
CN2008800005864A CN101542767B (zh) 2007-06-19 2008-06-06 隧道磁阻薄膜及磁性多层膜制作装置
EP08765232A EP2159858A1 (en) 2007-06-19 2008-06-06 Tunnel magnetoresistive thin film and magnetic multilayer formation apparatus
JP2009520421A JP4551484B2 (ja) 2007-06-19 2008-06-06 トンネル磁気抵抗薄膜及び磁性多層膜作製装置
US12/376,551 US8139325B2 (en) 2007-06-19 2008-06-06 Tunnel magnetoresistive thin film

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-161326 2007-06-19
JP2007161326 2007-06-19

Publications (1)

Publication Number Publication Date
WO2008155996A1 true WO2008155996A1 (ja) 2008-12-24

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ID=40156155

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/060419 WO2008155996A1 (ja) 2007-06-19 2008-06-06 トンネル磁気抵抗薄膜及び磁性多層膜作製装置

Country Status (5)

Country Link
US (1) US8139325B2 (ja)
EP (1) EP2159858A1 (ja)
JP (1) JP4551484B2 (ja)
CN (1) CN101542767B (ja)
WO (1) WO2008155996A1 (ja)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009212156A (ja) * 2008-02-29 2009-09-17 Toshiba Corp 磁気抵抗効果素子及びこれを用いた磁気メモリ
JP2011123944A (ja) * 2009-12-10 2011-06-23 Hitachi Global Storage Technologies Netherlands Bv Ｔｍｒリード・ヘッドの製造方法及びｔｍｒ積層体
JP2011198809A (ja) * 2010-03-17 2011-10-06 Toshiba Corp 磁気抵抗効果素子およびその製造方法ならびに磁気メモリ
JP5574350B2 (ja) * 2010-12-22 2014-08-20 株式会社アルバック トンネル磁気抵抗素子の製造方法
JP2015133478A (ja) * 2013-12-18 2015-07-23 アイメックＩｍｅｃ 磁性多層スタック

Families Citing this family (15)

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WO2010026667A1 (en) * 2008-09-03 2010-03-11 Canon Anelva Corporation Ferromagnetic preferred grain growth promotion seed layer for amorphous or microcrystalline mgo tunnel barrier
US8958176B2 (en) * 2010-12-22 2015-02-17 HGST Netherlands B.V Write head pole laminate structure
WO2012090395A1 (ja) * 2010-12-28 2012-07-05 キヤノンアネルバ株式会社 製造装置
EP2538235B1 (de) * 2011-06-24 2013-07-31 Christian-Albrechts-Universität zu Kiel Magnetostriktives Schichtsystem
US20130065075A1 (en) * 2011-09-12 2013-03-14 Klemens Pruegl Magnetoresistive spin valve layer systems
KR20140123340A (ko) * 2013-04-12 2014-10-22 삼성전자주식회사 자기 터널 접합을 갖는 반도체 소자의 형성 방법 및 관련된 소자
KR102245748B1 (ko) * 2014-09-12 2021-04-29 삼성전자주식회사 자기 기억 소자 및 이의 제조 방법
US9537088B1 (en) * 2015-07-13 2017-01-03 Micron Technology, Inc. Magnetic tunnel junctions
US9842988B2 (en) * 2015-07-20 2017-12-12 Headway Technologies, Inc. Magnetic tunnel junction with low defect rate after high temperature anneal for magnetic device applications
JP5985728B1 (ja) * 2015-09-15 2016-09-06 株式会社東芝 磁気メモリ
JP2020068214A (ja) * 2017-02-28 2020-04-30 Tdk株式会社 強磁性多層膜、磁気抵抗効果素子、及び強磁性多層膜を製造する方法
US10790635B2 (en) 2019-01-10 2020-09-29 Magtera, Inc. Technique of high-speed magnetic recording based on manipulating pinning layer in magnetic tunnel junction-based memory by using terahertz magnon laser
US10804671B1 (en) * 2019-01-10 2020-10-13 Magtera, Inc. Terahertz magnon generator comprising plurality of single terahertz magnon lasers
US10892602B1 (en) 2019-01-10 2021-01-12 Magtera, Inc. Tunable multilayer terahertz magnon generator
US20230225219A1 (en) * 2022-01-07 2023-07-13 Samsung Electronics Co., Ltd. Magnetic tunneling junction device and memory device including the same

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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009212156A (ja) * 2008-02-29 2009-09-17 Toshiba Corp 磁気抵抗効果素子及びこれを用いた磁気メモリ
JP2011123944A (ja) * 2009-12-10 2011-06-23 Hitachi Global Storage Technologies Netherlands Bv Ｔｍｒリード・ヘッドの製造方法及びｔｍｒ積層体
JP2011198809A (ja) * 2010-03-17 2011-10-06 Toshiba Corp 磁気抵抗効果素子およびその製造方法ならびに磁気メモリ
US8530887B2 (en) 2010-03-17 2013-09-10 Kabushiki Kaisha Toshiba Magnetoresistive element, method of manufacturing the same, and magnetic memory
JP5574350B2 (ja) * 2010-12-22 2014-08-20 株式会社アルバック トンネル磁気抵抗素子の製造方法
JP2015133478A (ja) * 2013-12-18 2015-07-23 アイメックＩｍｅｃ 磁性多層スタック

Also Published As

Publication number Publication date
JPWO2008155996A1 (ja) 2010-08-26
JP4551484B2 (ja) 2010-09-29
CN101542767A (zh) 2009-09-23
CN101542767B (zh) 2011-05-18
EP2159858A1 (en) 2010-03-03
US8139325B2 (en) 2012-03-20
US20100033878A1 (en) 2010-02-11

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