JP4541082B2 - 薄膜磁気インピーダンス型磁界検出素子の製造方法 - Google Patents
薄膜磁気インピーダンス型磁界検出素子の製造方法 Download PDFInfo
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- JP4541082B2 JP4541082B2 JP2004273220A JP2004273220A JP4541082B2 JP 4541082 B2 JP4541082 B2 JP 4541082B2 JP 2004273220 A JP2004273220 A JP 2004273220A JP 2004273220 A JP2004273220 A JP 2004273220A JP 4541082 B2 JP4541082 B2 JP 4541082B2
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a 長軸の長さ
b 短軸の長さ
c 膜厚
Hd 反磁界
Hext 外部磁界
Heff 実効磁界
θ0 外部磁界と長軸方向との成す角
θ 実効磁界と長軸方向との成す角
Claims (2)
- 長軸と短軸とを持つ薄膜磁性体に対して静磁界中でのアニーリングにより一軸磁気異方性を付加するアニーリング工程を含む磁界検出素子の製造方法において、前記アニーリング工程では、前記薄膜磁性体における前記一軸磁気異方性の方向と前記長軸の方向との成す角度を所望の角度θとするために、該薄膜磁性体における構成物質の飽和磁化をMs,磁化が飽和するときの磁界をHk,長軸の反磁界係数をNx,短軸の反磁界係数をNyとすると共に、外部磁界をHextとし、且つ真空の透磁率をμ0とした条件下でsinθcosθ0−cosθsinθ0−{(Nx−Ny)Ms/(μoHext)}sinθcosθ=0を満たすような該薄膜磁性体における該長軸の方向とのなす角度θ0にあって、該外部磁界HextをHext≧{Hk 2+2(Ms/μo)Hk(Nxcos2θ+Nysin2θ)+(Ms/μo)2(Nx 2cos2θ+Ny 2sin2θ)}1/2なる関係が満たされるように印加しながらアニーリングすることを特徴とする薄膜磁気インピーダンス型磁界検出素子の製造方法。
- 長軸と短軸とを持つ薄膜磁性体に対して静磁界中でのアニーリングにより一軸磁気異方性を付加するアニーリング工程を含む磁界検出素子の製造方法において、前記アニーリング工程では、前記薄膜磁性体における前記一軸磁気異方性の方向と前記長軸の方向との成す角度を所望の角度θとするために、該薄膜磁性体における構成物質の飽和磁化をM s ,磁化が飽和するときの磁界をH k ,長軸の反磁界係数をN x ,短軸の反磁界係数をN y とすると共に、外部磁界をH ext とし、且つ真空の透磁率をμ 0 、前記薄膜磁性体の比透磁率をμrとした条件下でtanθ0={Ny(μr−1)+1}/{Nx(μr−1)+1}tanθを満たすような該薄膜磁性体における前記長軸の方向とのなす角度θ0にあって、前記外部磁界HextをHext<{Hk 2+2(Ms/μo)Hk(Nxcos2θ+Nysin2θ)+(Ms/μo)2(Nx 2cos2θ+Ny 2sin2θ)}1/2なる関係が満たされるように印加しながらアニーリングすることを特徴とする薄膜磁気インピーダンス型磁界検出素子の製造方法。
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JP4541082B2 true JP4541082B2 (ja) | 2010-09-08 |
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FR2954512B1 (fr) * | 2009-12-21 | 2012-05-25 | Commissariat Energie Atomique | Realisation d'un dispositif a structures magnetiques formees sur un meme substrat et ayant des orientations d'aimantation respectives differentes |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH06333770A (ja) * | 1993-05-24 | 1994-12-02 | Mitsubishi Electric Corp | 磁性膜の製法および薄膜磁気ヘッド |
JP2003130932A (ja) * | 2001-10-25 | 2003-05-08 | Japan Science & Technology Corp | 磁界検出素子 |
JP2003282995A (ja) * | 2002-03-26 | 2003-10-03 | Miyagi Prefecture | 磁界検出素子 |
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Publication number | Priority date | Publication date | Assignee | Title |
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JPH06333770A (ja) * | 1993-05-24 | 1994-12-02 | Mitsubishi Electric Corp | 磁性膜の製法および薄膜磁気ヘッド |
JP2003130932A (ja) * | 2001-10-25 | 2003-05-08 | Japan Science & Technology Corp | 磁界検出素子 |
JP2003282995A (ja) * | 2002-03-26 | 2003-10-03 | Miyagi Prefecture | 磁界検出素子 |
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