JP4807863B2 - 垂直交換バイアスを有する膜デバイス - Google Patents
垂直交換バイアスを有する膜デバイス Download PDFInfo
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- JP4807863B2 JP4807863B2 JP2010053111A JP2010053111A JP4807863B2 JP 4807863 B2 JP4807863 B2 JP 4807863B2 JP 2010053111 A JP2010053111 A JP 2010053111A JP 2010053111 A JP2010053111 A JP 2010053111A JP 4807863 B2 JP4807863 B2 JP 4807863B2
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- 239000012528 membrane Substances 0.000 title 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 70
- 230000005415 magnetization Effects 0.000 claims description 40
- 239000010949 copper Substances 0.000 claims description 37
- 239000000758 substrate Substances 0.000 claims description 18
- 229910052802 copper Inorganic materials 0.000 claims description 16
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 13
- 239000003302 ferromagnetic material Substances 0.000 claims description 11
- 229910052759 nickel Inorganic materials 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 8
- 239000002885 antiferromagnetic material Substances 0.000 claims description 5
- DALUDRGQOYMVLD-UHFFFAOYSA-N iron manganese Chemical compound [Mn].[Fe] DALUDRGQOYMVLD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 230000005291 magnetic effect Effects 0.000 description 43
- 239000010408 film Substances 0.000 description 34
- 230000005294 ferromagnetic effect Effects 0.000 description 28
- 229910015136 FeMn Inorganic materials 0.000 description 19
- 230000005290 antiferromagnetic effect Effects 0.000 description 14
- 230000000694 effects Effects 0.000 description 14
- 239000013078 crystal Substances 0.000 description 7
- 229910003460 diamond Inorganic materials 0.000 description 7
- 239000010432 diamond Substances 0.000 description 7
- 229910045601 alloy Inorganic materials 0.000 description 6
- 239000000956 alloy Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 230000005381 magnetic domain Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000013598 vector Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 3
- 238000002441 X-ray diffraction Methods 0.000 description 3
- 239000011572 manganese Substances 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 230000005374 Kerr effect Effects 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 239000000696 magnetic material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910015475 FeF 2 Inorganic materials 0.000 description 1
- 229910000616 Ferromanganese Inorganic materials 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 229910019041 PtMn Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000005333 ferromagnetic domain Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 238000005404 magnetometry Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Images
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/3218—Exchange coupling of magnetic films via an antiferromagnetic interface
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3286—Spin-exchange coupled multilayers having at least one layer with perpendicular magnetic anisotropy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
- H01F41/30—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE]
- H01F41/302—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/26—Thin magnetic films, e.g. of one-domain structure characterised by the substrate or intermediate layers
- H01F10/30—Thin magnetic films, e.g. of one-domain structure characterised by the substrate or intermediate layers characterised by the composition of the intermediate layers, e.g. seed, buffer, template, diffusion preventing, cap layers
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/11—Magnetic recording head
- Y10T428/1157—Substrate composition
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/11—Magnetic recording head
- Y10T428/1171—Magnetic recording head with defined laminate structural detail
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12771—Transition metal-base component
- Y10T428/12861—Group VIII or IB metal-base component
- Y10T428/12868—Group IB metal-base component alternative to platinum group metal-base component [e.g., precious metal, etc.]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12771—Transition metal-base component
- Y10T428/12861—Group VIII or IB metal-base component
- Y10T428/12903—Cu-base component
- Y10T428/1291—Next to Co-, Cu-, or Ni-base component
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/32—Composite [nonstructural laminate] of inorganic material having metal-compound-containing layer and having defined magnetic layer
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Mathematical Physics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Thin Magnetic Films (AREA)
- Magnetic Heads (AREA)
- Hall/Mr Elements (AREA)
Description
バッファ材料は、銅及びダイアモンドからなる群から選択される材料を含むことができる。強磁性材料層は、ニッケル又はニッケル含有合金からなる群から選択される材料を含むことができる。反強磁性材料層は、マンガン基合金、例えばFeMnを含むことができる。
あるいはまた、バッファ材料は、(002)銅又は(001)ダイアモンドを含むことができる。ダイアモンドは、ホウ素をドープされたダイアモンド、又は窒素をドープされたダイアモンドを含むことができる。
に位置する磁化ベクトルである。極磁気測定法は面外成分を測定するだけであり、特定結晶軸に沿った面内磁化の方向とは無関係である。したがって、上向き又は下向きの磁化ベクトルがループの移動に寄与する一方、面内磁化は飽和磁界を増大させる。各磁区配列の総数は、静磁気垂直磁壁エネルギーと界面交換エネルギーとの間のバランスに依存する。これらのエネルギーの寄与は、結果的に異なる形状のヒステリシス曲線を生じさせる強磁性層の厚さ及び反強磁性層の厚さの関数として変化する。
に帰せられる。Ni層厚さが増大するにつれて、顕著な面内磁化の結果、交換バイアスのない純Ni膜と比較して保磁力はより小さくなる。この傾向は図5に示されており、この場合、HCは、最も厚いNi膜の場合に最小となる。本発明の膜の場合、図5の破線で示されている30オングストローム未満の厚さでは、Ni膜は単磁区状態にあり、磁化は膜面に対し垂直で、面内磁化成分は存在しない。
本発明のデバイスでは、適当な反強磁性体とともに、垂直異方性を有する強磁性体を含む2層構造体が使用される。強磁性材料は、純Ni又はNi基合金、例えばNi95Co5でよい。
垂直異方性を有する2層構造体は、好ましくは高いキュリー温度TCを有する強磁性層と、高いネール温度TNを有する反強磁性層とを含み、それにより、室温ヒステリシス測定を行うことができる。スピンバルブ・デバイスの場合、TC及びTNの双方がデバイス作動温度より高くなければならず、大半の交換バイアス・システムでは、常にTCがTNより高い。更に、反強磁性層を選択する場合、反強磁性層は、磁化が膜面に対し垂直となる広い厚さ範囲と、交換バイアス効果、つまりループ移動の観察が容易になるような比較的小さい保磁力とを備えている必要があろう。
現在まで、ほとんどすべての交換バイアス研究は、膜面内での磁化についてであった。われわれの2層構造体デバイスは、特徴的でない方法で交換バイアス効果を得る簡単な解決策を提供するものである。しかし、磁化は膜面に対し垂直だが、垂直交換バイアス効果は、面内交換バイアス効果に似た多くの特徴を有している。垂直交換バイアスでは、HEも強磁性層の厚さと逆に変化し、それによりバイアス効果を調整できる調整可能な範囲が得られる。
本発明を数例によって説明したが、当業者には、特許請求の範囲に定義される本発明の枠を逸脱することなしに、開示した例に対し種々の変更を加えることが可能であることが理解されよう。
Claims (3)
- 垂直交換バイアス・デバイス(10)において、
基板(12)の表面上に形成され、(002)銅で構成されるバッファ材料層(14)と、
前記バッファ材料層(14)の表面上に形成され、ニッケルで構成される強磁性材料層(18)であって、該強磁性材料層の磁化が、強磁性材料層面に対し垂直方向に向いている強磁性材料層(18)と、
前記強磁性材料層の表面上に形成され、鉄マンガンで構成される反強磁性材料層(22)とを含む垂直交換バイアス・デバイス。 - 前記基板(12)は、(001)シリコン基板である、請求項1に記載の垂直交換バイアス・デバイス。
- 前記反強磁性材料層(22)上に銅層(26)を形成した、請求項1または請求項2に記載の垂直交換バイアス・デバイス。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US38699702P | 2002-06-07 | 2002-06-07 | |
US60/386,997 | 2002-06-07 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2004511849A Division JP5027993B2 (ja) | 2002-06-07 | 2002-09-19 | 垂直交換バイアスを有する膜デバイス |
Publications (2)
Publication Number | Publication Date |
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JP2010192907A JP2010192907A (ja) | 2010-09-02 |
JP4807863B2 true JP4807863B2 (ja) | 2011-11-02 |
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JP2004511849A Expired - Fee Related JP5027993B2 (ja) | 2002-06-07 | 2002-09-19 | 垂直交換バイアスを有する膜デバイス |
JP2010053111A Expired - Fee Related JP4807863B2 (ja) | 2002-06-07 | 2010-03-10 | 垂直交換バイアスを有する膜デバイス |
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JP2004511849A Expired - Fee Related JP5027993B2 (ja) | 2002-06-07 | 2002-09-19 | 垂直交換バイアスを有する膜デバイス |
Country Status (4)
Country | Link |
---|---|
US (1) | US6835464B2 (ja) |
JP (2) | JP5027993B2 (ja) |
AU (1) | AU2002326969A1 (ja) |
WO (1) | WO2003104830A1 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006019728A (ja) * | 2004-06-30 | 2006-01-19 | Hitachi Global Storage Technologies Netherlands Bv | 交換結合された反強磁性/強磁性構造による垂直磁気バイアスを有する異常磁気抵抗センサ |
WO2010074130A1 (ja) | 2008-12-25 | 2010-07-01 | 日本電気株式会社 | 磁気メモリ素子及び磁気ランダムアクセスメモリ |
US9450177B2 (en) * | 2010-03-10 | 2016-09-20 | Tohoku University | Magnetoresistive element and magnetic memory |
JP6754108B2 (ja) | 2015-12-04 | 2020-09-09 | 国立研究開発法人物質・材料研究機構 | 単結晶磁気抵抗素子、その製造方法及びその使用方法 |
US11423928B1 (en) * | 2018-01-19 | 2022-08-23 | Seagate Technology Llc | Processing for forming single-grain near-field transducer |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05217921A (ja) * | 1991-09-13 | 1993-08-27 | Motorola Inc | 材料膜のエピタキシアル成長を行うための温度制御された処理 |
US5528440A (en) * | 1994-07-26 | 1996-06-18 | International Business Machines Corporation | Spin valve magnetoresistive element with longitudinal exchange biasing of end regions abutting the free layer, and magnetic recording system using the element |
JP3560713B2 (ja) * | 1995-01-27 | 2004-09-02 | アルプス電気株式会社 | 磁気抵抗効果素子用多層薄膜材料および磁性層の磁化の調整方法 |
EP0831541A3 (en) * | 1996-09-19 | 1999-05-06 | TDK Corporation | Ferromagnetic tunnel junction, magnetoresistive element and magnetic head |
US6134090A (en) * | 1998-03-20 | 2000-10-17 | Seagate Technology Llc | Enhanced spin-valve/GMR magnetic sensor with an insulating boundary layer |
JP2000091665A (ja) * | 1998-09-09 | 2000-03-31 | Nec Corp | 磁気抵抗効果膜及びその製造方法 |
JP3891540B2 (ja) * | 1999-10-25 | 2007-03-14 | キヤノン株式会社 | 磁気抵抗効果メモリ、磁気抵抗効果メモリに記録される情報の記録再生方法、およびmram |
US6847509B2 (en) * | 2001-02-01 | 2005-01-25 | Kabushiki Kaisha Toshiba | Magnetoresistive head and perpendicular magnetic recording-reproducing apparatus |
JP2003086423A (ja) * | 2001-09-17 | 2003-03-20 | Nippon Hoso Kyokai <Nhk> | 交換結合膜および形成方法 |
JP2003152240A (ja) * | 2001-11-13 | 2003-05-23 | Hitachi Ltd | 酸化物層を含んだ積層体及びこれを用いた磁気抵抗効果型ヘッド、磁気記録再生装置 |
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2002
- 2002-09-19 US US10/251,278 patent/US6835464B2/en not_active Expired - Lifetime
- 2002-09-19 JP JP2004511849A patent/JP5027993B2/ja not_active Expired - Fee Related
- 2002-09-19 AU AU2002326969A patent/AU2002326969A1/en not_active Abandoned
- 2002-09-19 WO PCT/US2002/029708 patent/WO2003104830A1/en active Application Filing
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2010
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JP2005529486A (ja) | 2005-09-29 |
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