JP2010192907A - 垂直交換バイアスを有する膜デバイス - Google Patents
垂直交換バイアスを有する膜デバイス Download PDFInfo
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- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
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- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/11—Magnetic recording head
- Y10T428/1157—Substrate composition
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y10T428/12771—Transition metal-base component
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
【解決手段】垂直交換バイアス・デバイス10が、基板12の表面上のバッファ材料層14と、バッファ材料層表面上の強磁性材料層18と、強磁性材料層表面上の反強磁性材料層22とを含み、前記強磁性材料層の磁化が強磁性材料層の面に対し垂直方向に向けられている。また垂直交換バイアス・デバイスを作製する方法は、基板表面上にバッファ材料層を形成する段階と、バッファ材料層表面上に強磁性材料層を形成する段階と、強磁性材料層表面上に反強磁性材料層を形成する段階とを含み、しかも強磁性材料層の磁化は強磁性材料層の面に対して垂直方向に向けられている。
【選択図】図1
Description
バッファ材料は、銅及びダイアモンドからなる群から選択される材料を含むことができる。強磁性材料層は、ニッケル又はニッケル含有合金からなる群から選択される材料を含むことができる。反強磁性材料層は、マンガン基合金、例えばFeMnを含むことができる。
あるいはまた、バッファ材料は、(002)銅又は(001)ダイアモンドを含むことができる。ダイアモンドは、ホウ素をドープされたダイアモンド、又は窒素をドープされたダイアモンドを含むことができる。
バッファ材料は、銅及びダイアモンドからなる群から選択された材料を含む。強磁性材料層は、ニッケル又はニッケル含有合金からなる群から選択された材料を含むことができる。反強磁性材料層は、マンガン基合金、例えばFeMnを含むことができる。
バッファ材料は、(002)銅又は(001)ダイアモンドを含むことができる。ダイアモンドは、ホウ素をドープされたダイアモンド又は窒素をドープされたダイアモンドでよい。
バッファ材料層表面上に強磁性材料層を形成する段階は、バッファ材料層表面上に強磁性材料層をエピタキシャル成長させる段階を含むことができる。
に位置する磁化ベクトルである。極磁気測定法は面外成分を測定するだけであり、特定結晶軸に沿った面内磁化の方向とは無関係である。したがって、上向き又は下向きの磁化ベクトルがループの移動に寄与する一方、面内磁化は飽和磁界を増大させる。各磁区配列の総数は、静磁気垂直磁壁エネルギーと界面交換エネルギーとの間のバランスに依存する。これらのエネルギーの寄与は、結果的に異なる形状のヒステリシス曲線を生じさせる強磁性層の厚さ及び反強磁性層の厚さの関数として変化する。
に帰せられる。Ni層厚さが増大するにつれて、顕著な面内磁化の結果、交換バイアスのない純Ni膜と比較して保磁力はより小さくなる。この傾向は図5に示されており、この場合、HCは、最も厚いNi膜の場合に最小となる。本発明の膜の場合、図5の破線で示されている30オングストローム未満の厚さでは、Ni膜は単磁区状態にあり、磁化は膜面に対し垂直で、面内磁化成分は存在しない。
本発明のデバイスでは、適当な反強磁性体とともに、垂直異方性を有する強磁性体を含む2層構造体が使用される。強磁性材料は、純Ni又はNi基合金、例えばNi95Co5でよい。
垂直異方性を有する2層構造体は、好ましくは高いキュリー温度TCを有する強磁性層と、高いネール温度TNを有する反強磁性層とを含み、それにより、室温ヒステリシス測定を行うことができる。スピンバルブ・デバイスの場合、TC及びTNの双方がデバイス作動温度より高くなければならず、大半の交換バイアス・システムでは、常にTCがTNより高い。更に、反強磁性層を選択する場合、反強磁性層は、磁化が膜面に対し垂直となる広い厚さ範囲と、交換バイアス効果、つまりループ移動の観察が容易になるような比較的小さい保磁力とを備えている必要があろう。
現在まで、ほとんどすべての交換バイアス研究は、膜面内での磁化についてであった。われわれの2層構造体デバイスは、特徴的でない方法で交換バイアス効果を得る簡単な解決策を提供するものである。しかし、磁化は膜面に対し垂直だが、垂直交換バイアス効果は、面内交換バイアス効果に似た多くの特徴を有している。垂直交換バイアスでは、HEも強磁性層の厚さと逆に変化し、それによりバイアス効果を調整できる調整可能な範囲が得られる。
本発明を数例によって説明したが、当業者には、特許請求の範囲に定義される本発明の枠を逸脱することなしに、開示した例に対し種々の変更を加えることが可能であることが理解されよう。
Claims (1)
- 垂直交換バイアス・デバイス(10)において、
基板(12)の表面上のバッファ材料層(14)と、
前記バッファ材料層(14)の表面上の強磁性材料層(18)であって、該強磁性材料層の磁化が、強磁性材料層面に対し垂直方向に向いている強磁性材料層(18)と、
前記強磁性材料層の表面上の反強磁性材料層(22)とを含む垂直交換バイアス・デバイス。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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US38699702P | 2002-06-07 | 2002-06-07 | |
US60/386,997 | 2002-06-07 |
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JP2004511849A Division JP5027993B2 (ja) | 2002-06-07 | 2002-09-19 | 垂直交換バイアスを有する膜デバイス |
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JP2010192907A true JP2010192907A (ja) | 2010-09-02 |
JP4807863B2 JP4807863B2 (ja) | 2011-11-02 |
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JP2004511849A Expired - Fee Related JP5027993B2 (ja) | 2002-06-07 | 2002-09-19 | 垂直交換バイアスを有する膜デバイス |
JP2010053111A Expired - Fee Related JP4807863B2 (ja) | 2002-06-07 | 2010-03-10 | 垂直交換バイアスを有する膜デバイス |
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JP2004511849A Expired - Fee Related JP5027993B2 (ja) | 2002-06-07 | 2002-09-19 | 垂直交換バイアスを有する膜デバイス |
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US (1) | US6835464B2 (ja) |
JP (2) | JP5027993B2 (ja) |
AU (1) | AU2002326969A1 (ja) |
WO (1) | WO2003104830A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017103419A (ja) * | 2015-12-04 | 2017-06-08 | 国立研究開発法人物質・材料研究機構 | 単結晶磁気抵抗素子、その製造方法及びその使用方法 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006019728A (ja) * | 2004-06-30 | 2006-01-19 | Hitachi Global Storage Technologies Netherlands Bv | 交換結合された反強磁性/強磁性構造による垂直磁気バイアスを有する異常磁気抵抗センサ |
US8687414B2 (en) | 2008-12-25 | 2014-04-01 | Nec Corporation | Magnetic memory element and magnetic random access memory |
US9450177B2 (en) * | 2010-03-10 | 2016-09-20 | Tohoku University | Magnetoresistive element and magnetic memory |
US11423928B1 (en) * | 2018-01-19 | 2022-08-23 | Seagate Technology Llc | Processing for forming single-grain near-field transducer |
Citations (4)
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JPH08264861A (ja) * | 1995-01-27 | 1996-10-11 | Alps Electric Co Ltd | 磁気抵抗効果素子用多層薄膜材料および磁性層の磁化の調整方法 |
JP2000091665A (ja) * | 1998-09-09 | 2000-03-31 | Nec Corp | 磁気抵抗効果膜及びその製造方法 |
JP2003086423A (ja) * | 2001-09-17 | 2003-03-20 | Nippon Hoso Kyokai <Nhk> | 交換結合膜および形成方法 |
JP2003152240A (ja) * | 2001-11-13 | 2003-05-23 | Hitachi Ltd | 酸化物層を含んだ積層体及びこれを用いた磁気抵抗効果型ヘッド、磁気記録再生装置 |
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JPH05217921A (ja) * | 1991-09-13 | 1993-08-27 | Motorola Inc | 材料膜のエピタキシアル成長を行うための温度制御された処理 |
US5528440A (en) | 1994-07-26 | 1996-06-18 | International Business Machines Corporation | Spin valve magnetoresistive element with longitudinal exchange biasing of end regions abutting the free layer, and magnetic recording system using the element |
SG72760A1 (en) * | 1996-09-19 | 2000-05-23 | Tdk Corp | Ferromagnetic tunnel junction magnetoresistive element and magnetic head |
US6134090A (en) | 1998-03-20 | 2000-10-17 | Seagate Technology Llc | Enhanced spin-valve/GMR magnetic sensor with an insulating boundary layer |
JP3891540B2 (ja) * | 1999-10-25 | 2007-03-14 | キヤノン株式会社 | 磁気抵抗効果メモリ、磁気抵抗効果メモリに記録される情報の記録再生方法、およびmram |
US6847509B2 (en) * | 2001-02-01 | 2005-01-25 | Kabushiki Kaisha Toshiba | Magnetoresistive head and perpendicular magnetic recording-reproducing apparatus |
-
2002
- 2002-09-19 JP JP2004511849A patent/JP5027993B2/ja not_active Expired - Fee Related
- 2002-09-19 AU AU2002326969A patent/AU2002326969A1/en not_active Abandoned
- 2002-09-19 US US10/251,278 patent/US6835464B2/en not_active Expired - Lifetime
- 2002-09-19 WO PCT/US2002/029708 patent/WO2003104830A1/en active Application Filing
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- 2010-03-10 JP JP2010053111A patent/JP4807863B2/ja not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08264861A (ja) * | 1995-01-27 | 1996-10-11 | Alps Electric Co Ltd | 磁気抵抗効果素子用多層薄膜材料および磁性層の磁化の調整方法 |
JP2000091665A (ja) * | 1998-09-09 | 2000-03-31 | Nec Corp | 磁気抵抗効果膜及びその製造方法 |
JP2003086423A (ja) * | 2001-09-17 | 2003-03-20 | Nippon Hoso Kyokai <Nhk> | 交換結合膜および形成方法 |
JP2003152240A (ja) * | 2001-11-13 | 2003-05-23 | Hitachi Ltd | 酸化物層を含んだ積層体及びこれを用いた磁気抵抗効果型ヘッド、磁気記録再生装置 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017103419A (ja) * | 2015-12-04 | 2017-06-08 | 国立研究開発法人物質・材料研究機構 | 単結晶磁気抵抗素子、その製造方法及びその使用方法 |
US10749105B2 (en) | 2015-12-04 | 2020-08-18 | National Institute For Materials Science | Monocrystalline magneto resistance element, method for producing the same and method for using same |
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Publication number | Publication date |
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AU2002326969A1 (en) | 2003-12-22 |
US6835464B2 (en) | 2004-12-28 |
US20030228491A1 (en) | 2003-12-11 |
JP4807863B2 (ja) | 2011-11-02 |
JP2005529486A (ja) | 2005-09-29 |
JP5027993B2 (ja) | 2012-09-19 |
WO2003104830A1 (en) | 2003-12-18 |
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